ATP Industrial Grade USB Module Specification

ATP Industrial Grade USB Module Specification ATP Electronics, Inc.

CONTENT Disclaimer... 1 Revision History... 1 1.0 ATP Industrial Grade USB Module Overview... 3 1.1 Product Image... 3 1.2 Capacities... 3 1.3 Introduction... 4 1.4 Features... 4 2.0 Product Specification... 5 2.1 Electrical Specifications... 5 2.2 Environment Specifications... 5 2.3 Extra Features... 5 2.4 Reliability... 6 2.5 Performance... 6 2.6 Data Retention... 7 2.7 Physical Dimension Specifications (Units in MM)... 7 2.8 Mechanical Form Factor (Units in MM)... 7 2.9 Certifications... 8 3.0 Electrical Interface... 9 3.1 Block Diagram... 9 3.2 Pin Assignment... 9 ATP Electronics, Inc.

Disclaimer ATP Electronics Inc. shall not be liable for any errors or omissions that may appear in this document, and disclaims responsibility for any consequences resulting from the use of the information set forth herein. The information in this manual is subject to change without notice. ATP general policy does not recommend the use of its products in life support applications where in a failure or malfunction of the product may directly threaten life or injury. All parts of the ATP documentation are protected by copyright law and all rights are reserved. This documentation may not, in whole or in part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine-readable form without prior consent, in writing, from ATP Corporation. The information set forth in this document is considered to be Proprietary and Confidential property owned by ATP. Revision History Copyright ATP All Rights Reserved. Date Version Changes compared to previous issue Oct. 15 th, 2010 0.9 - Preliminary version Feb. 16 th, 2011 0.91 - Update P/N May. 16 th, 2011 0.92 - Revise ESD information - Add 4GB P/N - Add Salt water spray test, Drop test, UV light exposure test, and Random vibration test Jun. 9 th, 2011 0.93 - Add 512MB product Jun. 13 th, 2011 0.94 - Revise 4GB performance Jul. 12 th, 2011 0.95 - Revise product image Jul. 21 st, 2011 0.96 - Update physical dimensions Jan. 19 th, 2012 1.0 - Release version 1.0 - Remove density 128MB/256MB May. 22 nd, 2012 1.1 - Add 8GB product Aug. 3 rd, 2012 1.2 - Revise 2GB P/N and performance Aug. 23 rd, 2012 1.3 - Revised 512MB P/N and performance Dec. 11 th, 2012 1.4 - Revised P/N, reliability and performance Jun. 3 th, 2013 1.5 - Update the 2/4GB P/N, reliability, performance and data retention ATP Confidential ATP Electronics, Inc. Page 1 of 10

July 17 th, 2013 1.6 - Update 8GB P/N, performance Nov. 26 th, 2013 1.7 - Revise format/electrical/environment/reliability/data retention description Apr. 16 th, 2014 1.8 - Update MTBF value Sep. 22 nd, 2014 1.9 - Update Reliability Note description - Update Data Retention Note description Dec. 23 rd, 2014 2.0 - Update Dimension Jan. 8 th, 2015 2.1 - Update branch office information Feb. 2 nd, 2015 2.2 - Update Section 2.6 Data Retention Table ATP Confidential ATP Electronics, Inc. Page 2 of 10

1.0 ATP Industrial Grade USB Module Overview 1.1 Product Image Figure 1-1: Product Images 1.2 Capacities EXTERNAL P/N AF512UFP3NC(I)-AABXX AF1GUFP3NC(I)-AABXX AF2GUFP3NC(I)-AACXX AF4GUFP3NC(I)-AACXX AF8GUFP3NC(I)-AABXX Table 1-1: Capacities Capacity 512MB 1GB 2GB 4GB 8GB ATP Confidential ATP Electronics, Inc. Page 3 of 10

1.3 Introduction ATP UFD is a solid-state flash memory product that complies with the USB2.0 and USB1.1 standard. ATP UFD is designed to plug in directly to USB-A receptacles and compatible with USB interface. ATP industrial grade UFD is ideal for mission critical industrial applications, such as a boot drive application. ATP UFD comes with its ready to be used plug and play feature. In addition, it includes an intelligent controller that manages interface protocols and data storage as well as ECC, defect handling and diagnostics, and clock control. 1.4 Features High Speed USB 2.0 compliant and backward compatible with USB1.1 High Speed (480 Mbits/sec), Full Speed (12 Mbits/sec) and Low Speed (1.5 Mbits/sec) transfer rate Operating temperature: -40 o C to 85 o C Top level Single Level Cell (SLC) NAND flash memory True Plug and play connection support hot swap. Advanced NAND management technology, global wear leveling algorithm High reliability, MTBF(Mean Time Between Failures): 5,000,000 hours Enhanced bad block management algorithm ATP Confidential ATP Electronics, Inc. Page 4 of 10

2.0 Product Specification 2.1 Electrical Specifications Symbol Parameter Min. Typ. Max. Unit V CC Recommend Supply Voltage 4.5 5.0 5.5 V V peak Peak Voltage on any Pin -0.3-5.5 V (Except USBD-, USBD+) I CC Operating Current (read & write) - 130 - ma I SB Standby Current - 80 - ma Table 2-1: Electrical Specifications 2.2 Environment Specifications Parameter Behavior Value Temperature Operating -40 o C to 85 o C Non-Operating -40 o C to 85 o C Humidity Operating 25 o C, 8% to 95%, noncondensing Non-Operating 40 o C, 8% to 93%, noncondensing Non-contact pads +/- 15KV ( Air discharge ) ESD Contact pads +/- 8KV (Coupling plane discharge) (IEC61000-4-2) Contact pads +/- 4KV Salt Water Spray Non-Operating 3%NaCI/35, Over 85%RH, 24hours Drop Test Non-Operating 150cm/free fall, total 6 drops Random Vibration Non-Operating 10~2000Hz, 6 Grms, 30 mins per axis UV Light Exposure Test Non-Operating 254nm, 15Ws/cm2 Table 2-2: Environment Specification 2.3 Extra Features Type Water Proof Dust Proof ESD Proof Shock Resistant Value Yes Yes Yes Yes Table 2-3: Extra Features ATP Confidential ATP Electronics, Inc. Page 5 of 10

2.4 Reliability Type Endurance Endurance TBW (Total Bytes Written) MTBF (25 ) Number of Insertion Measurement SLC block endurance: >60,000 P/E cycles up to 10 terabyte random write 512MB up to 20 terabyte random write up to 20 terabyte random write 1G up to 40 terabyte sequential write up to 40 terabyte random write 2G up to 80 terabyte sequential write up to 80 terabyte random write 4GB up to 160 terabyte sequential write up to 96 terabyte random write 8GB up to 192 terabyte sequential write 5,000,000 hours 10,000 times Table 2-4: Reliability Note: Endurance for the UFD can be predicted based on the usage conditions applied to the device, the internal NAND component cycles, the write amplification factor, and the wear leveling efficiency of the drive. TBW may vary depending on application, please contact ATP for TCO evaluation if specific usage type applies. 2.5 Performance Type Parameter Value 512MB Sequential read up to 18MByte/s Sequential write up to 10MByte/s 1GB Sequential read up to 18MByte/s Sequential write up to 14MByte/s 2GB Sequential read up to 20MByte/s Sequential write up to 16MByte/s 4GB Sequential read up to 19MByte/s Sequential write up to 17MByte/s 8GB Sequential read up to 21MByte/s Sequential write up to 16MByte/s Table 2-5: Performance Note: Tested by HDBENCH 3.4 with 40MB file size. The performance may vary based on configuration, firmware/setting and testing environment. ATP Confidential ATP Electronics, Inc. Page 6 of 10

2.6 Data Retention Density 512MB~4GB 8GB Endurance Used Number of P/E Cycles Used (block level) Corresponding Data Retention at 25 o C use condition 10% P/E cycles 10,000 Cycles 10 years 100% P/E cycles 100,000 Cycles 1 year 10% P/E cycles 6,000 Cycles 10 years 100% P/E cycles 60,000 Cycles 1 year Table 2-6: Data Retention Note : Data retention value may vary across different temperature range and is experimental result to be used for reference. 2.7 Physical Dimension Specifications (Units in MM) Type Length Width Thickness Weight Value 26.55mm +/- 0.10mm 12.00mm +/- 0.10mm 4.50mm +/- 0.10mm 8 g Max. Table 2-7: Physical Dimension Specifications 2.8 Mechanical Form Factor (Units in MM) Figure 2-1: Mechanical Form Factor ATP Confidential ATP Electronics, Inc. Page 7 of 10

2.9 Certifications Mark/Approval Documentation Certification The CE marking (also known as CE mark) is a mandatory conformance mark on many products placed on the single market in the European Economic Area (EEA). The CE marking certifies that a product has met EU consumer safety, health or environmental requirements. CE stands for Conformité Européenne, "European conformity" in French. FCC Part 15 Class B was used for Evolution of United States (US) Emission Standards for Commercial Electronic Products, The United States (US) covers all types of unintentional radiators under Subparts A and B (Sections 15.1 through 15.199) of FCC 47 CFR Part 15, usually called just FCC Part 15 Table 2-8: Certifications Yes Yes ATP Confidential ATP Electronics, Inc. Page 8 of 10

3.0 Electrical Interface 3.1 Block Diagram Figure 3-1: Block Diagram 3.2 Pin Assignment Figure 3-2: Pin Assignment Pin Name Color Function 1 Vcc Red +5V supply voltage 2 D- White Data- signal line 3 D+ Green Data+ signal line 4 GND Black Supply ground *ATP UFD uses SIP process without additional GND connection to shield and has better ESD protection than others. Table 3-1: Pin Assignment ATP Confidential ATP Electronics, Inc. Page 9 of 10

ATP Confidential ATP Electronics, Inc. Page 10 of 10