Surface Mount 18,000 W Transient Voltage Suppressor

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MPLAD18KP7.0A MPLAD18KP200CA Datasheet Surface Mount 18,000 W Transient Voltage Suppressor Released June 2017

Contents 1 Revision History... 1 1.1 Revision 1.0... 1 2 Product Overview... 2 2.1 Features... 2 2.2 Applications and Benefits... 2 2.3 Part Nomenclature... 3 2.4 Symbols and Definitions... 3 3 Electrical Specifications... 4 3.1 Maximum Ratings... 4 3.2 Typical Electrical Performance... 3.3 Typical Performance Curves... 7 4 Package Specification... 9 4.1 Package Dimensions... 4.2 Pad Layout... Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01

1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in May 2017. It is the first publication of this document. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 1

2 Product Overview These high-power, 18 kw-rated transient voltage suppressors in a surface mount package are provided with design features to minimize thermal resistance and cumulative heating. Typical applications include lightning and automotive load dump protection. They are particularly effective at meeting the multistroke lightning standard RTCA DO-160, section 22 for aircraft design. This efficient low-profile package design is offered in standoff voltage selections (V WM) of 7 Volts to 200 Volts in either unidirectional or bidirectional construction. 2.1 Features The following are key features of the MPLAD18KP7.0A MPLAD18KP200CA devices: Available in both unidirectional and bidirectional construction (bidirectional with CA suffix) High reliability with wafer fabrication and assembly lot traceability All parts surge tested Low-profile surface mount package Optional upscreening is available with various screening and conformance inspection options based on MIL-PRF-1900. Refer to Hirel Non-Hermetic Product Portfolio brochure on our website for more details on the screening options. Suppresses transients up to 18,000 W at /00 μs (see Figure 1) Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS-compliant versions are available 3σ lot norm screening performed on standby current (I D) 2.2 Applications and Benefits The following are benefits of the MPLAD18KP7.0A MPLAD18KP200CA devices: Protection from switching transients and induced RFI Protection from ESD, and EFT per IEC 600-4-2 and IEC 600-4-4 Secondary lightning protection per IEC 600-4- with 42 Ω source impedance: Class 1,2,3,4,: MPLAD18KP7.0A to 200CA Secondary lightning protection per IEC 600-4- with 12 Ω source impedance: Class 1,2,3,4: MPLAD18KP7.0A to 200CA Secondary lightning protection per IEC 600-4- with 2 Ω source impedance: Class 4: MPLAD18KP.0 to 64CA Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 2 C)*: Level 4: MPLAD18KP7.0A to 200CA Level : MPLAD18KP7.0A to 130CA Pin injection protection per RTCA/DO-160F for Waveform A (40/120 μs at 2 C)*: Level 4: MPLAD18KP7.0A to 36CA * See MicroNote 132 for further temperature derating selection. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 2

2.3 Part Nomenclature The folowing table lists the part nomenclature for the MPLAD18KP7.0A MPLAD18KP200CA devices. Table 1 MPLAD18KP7.0A Part Nomenclature M Reliability level* M MA MX MXL *(see Hirel Non-Hermetic Product Portfolio) PLAD 18K P Package designation P PP rating (W) Plastic 7.0 Reverse standoff voltage CA polarity A = Unidirectional CA = Bidirectional e3 RoHS compliance e3 = RoHS compliant blank = non-rohs compliant 2.4 Symbols and Definitions The following table lists the symbols and definitions used for the MPLAD18KP7.0A MPLAD18KP200CA devices. Table 2 Symbols and Definitions Symbol Value Definition I(BR) Breakdown current The current used for measuring breakdown voltage V (BR). ID Standby current The current at the rated standoff voltage V WM. IPP Peak Impulse current The peak current during the impulse. V(BR) Breakdown voltage The minimum voltage the device will exhibit at a specified current. VC Clamping voltage Clamping voltage at I PP (peak pulse current) at the specified pulse conditions (typically shown as maximum value). VWM Rated Working Standoff voltage The maximum peak voltage that can be applied over the operating temperature range. αv(br) Temperature Coefficient of Breakdown voltage The change in breakdown voltage divided by change in temperature. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 3

3 Electrical Specifications This section details the electrical specifications for the MPLAD18KP7.0A MPLAD18KP200CA devices. 3.1 Maximum Ratings Table 3 Absolute Maximum Ratings Parameter/Test Conditions Symbol Value Unit Junction and Storage Temperature 1. 2. 3. 4.. T J and TSTG to + C Thermal Resistance Junction-to-Ambient 1 RθJA 0 C/W Thermal Resistance Junction-to-Case RθJC 0.7 C/W Peak Pulse Power at /00 μs 2 PPP 18000 W t clamping (0 V to V ( BR) min) Unidirectional <0 ps Bidirectional < ns Forward Clamping Voltage at 00 A 3 VFS 2.0 V Forward Surge Current 3 IFSM 0 A Solder Temperature at s TSP 260 C Steady-State Power dissipation T A = 2 C PD 2. 1 W T C = 0 C 0 4 W When mounted on FR4 PC board (1 oz Cu) with recommended mounting pad (see pad layout). Also see Figures 1 and 2. With impulse repetition rate (duty factor) of 0.0% or less. At 8.3 ms half-sine wave (unidirectional devices only). Case temperature controlled on heat sink as specified. See MicroNote 134 for derating P PP when also applying steady-state power. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 4

3.2 Typical Electrical Performance The following table shows the Electrical characteristics of the MPLAD18KLP7.0A MPLAD18KP200CA devices at 2 C unless otherwise specified. Part Number Table 4 Typical Electrical Performance Reverse Standoff Voltage 1 Breakdown Voltage at I(BR) Unidirectional Bidirectional V VBR ma Max Clamping Voltage at IPP Max Standby Current at VWM Max Peak Pulse Current I PP 3 Max Temp Coefficient α v(br) V C I D A mv/ C MPLAD18KP7.0A MPLAD18KP7.0CA 7.0 7.78 8.60 12.0 3000 0 2.0 MPLAD18KP7.A MPLAD18KP7.CA 7. 8.33 9.21 12.9 70 1396 2 6.0 MPLAD18KP8.0A MPLAD18KP8.0CA 8.0 8.89 9.83 13.6 40 1324 6.0 MPLAD18KP8.A MPLAD18KP8.CA 8. 9.44.4 14.4 120 2 7.0 MPLAD18KP9.0A MPLAD18KP9.0CA 9.0.0 11.1 1.4 60 1169 2 8.0 MPLAD18KPA MPLAD18KPCA 11.1 12.3 17.0 4 9 2 9.0 MPLAD18KP11A MPLAD18KP11CA 11 12.2 13. 18.2 989 MPLAD18KP12A MPLAD18KP12CA 12 13.3 14.7 19.9 909 11 MPLAD18KP13A MPLAD18KP13CA 13 14.4 1.9 21. 838 12 MPLAD18KP14A MPLAD18KP14CA 14 1.6 17.2 23.2 776 13 MPLAD18KP1A MPLAD18KP1CA 1 16.7 18. 24.4 738 1 MPLAD18KP16A MPLAD18KP16CA 16 17.8 19.7 26.0 693 16 MPLAD18KP17A MPLAD18KP17CA 17 18.9 20.9 27.6 6 18 MPLAD18KP18A MPLAD18KP18CA 18 20.0 22.1 29.2 617 19 MPLAD18KP20A MPLAD18KP20CA 20 22.2 24. 32.4 6 22 MPLAD18KP22A MPLAD18KP22CA 22 24.4 26.9 3. 08 24 MPLAD18KP24A MPLAD18KP24CA 24 26.7 29. 38.9 463 27 MPLAD18KP26A MPLAD18KP26CA 26 28.9 31.9 42.1 428 29 MPLAD18KP28A MPLAD18KP28CA 28 31.1 34.4 4. 396 30 MPLAD18KP30A MPLAD18KP30CA 30 33.3 36.8 48.4 372 3 MPLAD18KP33A MPLAD18KP33CA 33 36.7 40.6 3.3 388 38 MPLAD18KP36A MPLAD18KP36CA 36 40.0 44.2 8.1 3 40 MPLAD18KP40A MPLAD18KP40CA 40 44.4 49.1 64. 280 4 MPLAD18KP43A MPLAD18KP43CA 43 47.8 2.8 69.4 260 49 MPLAD18KP4A MPLAD18KP4CA 4 0.0.3 72.7 248 1 MPLAD18KP48A MPLAD18KP48CA 48 3.3 8.9 77.4 233 MPLAD18KP1A MPLAD18KP1CA 1 6.7 62.7 82.4 219 60 MPLAD18KP4A MPLAD18KP4CA 4 60.0 66.3 87.1 207 64 MPLAD18KP8A MPLAD18KP8CA 8 64.4 71.2 93.6 193 69 Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01

Part Number Reverse Standoff Voltage 1 Breakdown Voltage at I(BR) Max Clamping Voltage at IPP Max Standby Current at VWM Max Peak Pulse Current I PP 3 Max Temp Coefficient α v(br) MPLAD18KP60A MPLAD18KP60CA 60 66.7 73.7 96.8 186 70 MPLAD18KP64A MPLAD18KP64CA 64 71.1 78.6 3 17 7 MPLAD18KP70A MPLAD18KP70CA 70 77.8 86.0 113 160 84 MPLAD18KP7A MPLAD18KP7CA 7 83.3 92.1 121 149 90 MPLAD18KP78A MPLAD18KP78CA 78 86.7 9.8 126 143 94 MPLAD18KP8A MPLAD18KP8CA 8 94.4 4.0 137 132 2 MPLAD18KP90A MPLAD18KP90CA 90 0 111 146 124 9 MPLAD18KP0A MPLAD18KP0CA 0 111 123 162 112 122 MPLAD18KP1A MPLAD18KP1CA 1 122 13 177 2 132 MPLAD18KP120A MPLAD18KP120CA 120 133 147 193 94 14 MPLAD18KP130A MPLAD18KP130CA 130 144 19 209 87 17 MPLAD18KPA MPLAD18KPCA 167 18 193 7 183 MPLAD18KP160A MPLAD18KP160CA 160 178 197 29 70 19 MPLAD18KP170A MPLAD18KP170CA 170 189 209 27 66 207 MPLAD18KP180A MPLAD18KP180CA 180 200 221 291 62 219 MPLAD18KP200A MPLAD18KP200CA 200 222 24 322 6 243 Notes: 1. Transient voltage suppressors are normally selected with reverse standoff voltage V WM, which should be equal to or greater than the peak operating voltage. 2. Surge testing is performed to 00 A due to equipment limitations. 3. See Figure 3. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 6

3.3 Typical Performance Curves Figure 1 Peak Pulse Power vs. Pulse Time (to 0% of exponentially decaying pulse) Figure 2 Pulse Waveform Test waveform parameters: tr = μs, tp = 00 μs Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 7

Figure 3 Derating Curve Figure 4 Typical Capacitance vs. Breakdown Voltage (Unidirectional Configuration) Note: Bidirectional capacitance is half that shown at 0 V. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 8

4 Package Specification The following illustration is the MPLAD18KP7.0A - MPLAD18KP200CA package. This package is tested in accordance with the requirements of AEC-Q1. The cathode is the metal base under the body of this device. Figure PLAD Package The following table lists mechanical and packaging information for the MPLAD18KP7.0A - MPLAD18KP200CA devices. Table Mechanical and Packaging Mechanical and Packaging Case: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 Terminals: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL-STD- 70, method 2026. Marking: Body marked with part number Polarity: For unidirectional devices, the cathode is on the metal backside (package bottom) Available in bulk or custom tape-and-reel packaging Tape-and-Reel: Standard per EIA-481-B (add TR suffix to part number). Consult factory for quantities. Weight: Approximately 1 g See Package Dimensions on last page. Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01 9

4.1 Package Dimensions The following illustration shows the package dimensions for the MPLAD18KP7.0A MPLAD18KP200CA devices. Figure 6 Chip Outline Drawing 4.2 Pad Layout The following illustration shows the pad layout for the MPLAD18KP7.0A MPLAD18KP200CA devices Figure 7 Pad Layout Microsemi Proprietary and Confidential. Document Number: RF0121 Revision: 01

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