24AA128/24LC128/24FC128

Similar documents
24AA64/24LC64/24FC64. 64K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Max.

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number.

24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges.

I 2 C Serial EEPROM Family Data Sheet

25AA160A/B, 25LC160A/B

1K-16K UNI/O Serial EEPROM Family Data Sheet

25AA040/25LC040/25C040

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C

93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C

512K bitstwo-wire Serial EEPROM

A24C64. AiT Semiconductor Inc. ORDERING INFORMATION

A24C02. AiT Semiconductor Inc. ORDERING INFORMATION

A24C08. AiT Semiconductor Inc. ORDERING INFORMATION

ZD24C32A. I 2 C-Compatible (2-wire) Serial EEPROM. 32-Kbit (4,096 x 8) DATASHEET. Features. Description. Low Voltage Operation

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005

HT24LC02A CMOS 2K 2-Wire Serial EEPROM

深圳市馨晋商电子有限公司 Shenzhen XinJinShang Electronics Co. Ltd.

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM

ISSI Preliminary Information January 2006

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) AT24C04B AT24C08B. Features. Description. Low-voltage and Standard-voltage Operation 1.

深圳市馨晋商电子有限公司电可擦可编程只读存储器 (EEPROM) AT24C02N VER:F4-1

FM24C04-S. 4Kb FRAM Serial Memory. Features. Pin Configuration. Description VDD NC A1 SCL SDA VSS. Ordering Information

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

ACE24AC02A1 Two-wire Serial EEPROM

16K-128K I 2 C Serial EEPROM with Software Write Protection Family Data Sheet

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations

ACE24AC16B Two-wire Serial EEPROM

ACE24AC64 Two-wire Serial EEPROM

ACE24AC128 Two-wire Serial EEPROM

ACE24AC02A3C Two-wire Serial EEPROM

Fremont Micro Devices, Inc.

Two-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2)

ISSI IS23SC4418 IS23SC KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC) IS23SC4418 IS23SC4428 FEATURES DESCRIPTION

ILI2303. ILI2303 Capacitive Touch Sensor Controller. Specification

GT24C256 2-WIRE. 256K Bits. Serial EEPROM

GT24C64 2-WIRE. 64K Bits. Serial EEPROM

AS6C K X 8 BIT LOW POWER CMOS SRAM

FM24C02A 2-Wire Serial EEPROM

LY68L M Bits Serial Pseudo-SRAM with SPI and QPI

GT24C WIRE. 1024K Bits. Serial EEPROM

ACE24C512C Two-wire serial EEPROM

GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)

DS1676 Total Elapsed Time Recorder, Erasable

Debounced 8 8 Key-Scan Controller

RM24C64AF 64-Kbit 1.65V Minimum Non-volatile Fast Write Serial EEPROM I 2 C Bus

FAST CMOS OCTAL BUFFER/LINE DRIVER

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp.

24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration

Rev. No. History Issue Date Remark

GT34C02. 2Kb SPD EEPROM

CMOS PARALLEL-TO-SERIAL FIFO 1,024 x 16

24LC08. 8K-Bit Serial EEPROM OVERVIEW FEATURES ORDERING INFORMATION

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

GT25C64 SPI. 64K bits. Serial EEPROM

FM24C Kb FRAM Serial Memory Features

Temperature Sensor for I 2 C BUS Monolithic IC MM3286 Series

HT93LC46 CMOS 1K 3-Wire Serial EEPROM

128Kx8 CMOS MONOLITHIC EEPROM SMD

GT24C32A 2-WIRE. 32K Bits. Serial EEPROM

CAT25C02/04/08/16/32 2K/4K/8K/16K/32K SPI Serial CMOS E 2 PROM FEATURES

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

FM24C02B/04B/08B/16B 2-Wire Serial EEPROM

8K X 8 BIT LOW POWER CMOS SRAM

3.3 Volt CMOS Bus Interface 8-Bit Latches

FM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information.

MX27C K-BIT [32K x 8] CMOS EPROM FEATURES GENERAL DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATIONS PIN DESCRIPTION

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

64K x 16 1Mb Asynchronous SRAM

FM24C16C-GTR. 16Kb Serial 5V F-RAM Memory. Features. Description. Pin Configuration NC NC NC VSS VDD WP SCL SDA. Ordering Information.

DS 1682 Total Elapsed Time Recorder with Alarm

IS62/65WVS5128GALL IS62/65WVS5128GBLL. 512Kx8 LOW VOLTAGE, FAST SERIAL SRAM with SPI, SDI and SQI INTERFACE KEY FEATURES DESCRIPTION

512K x 8 4Mb Asynchronous SRAM

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark

CAT22C Bit Nonvolatile CMOS Static RAM

Shanghai Belling Corp., Ltd BL55028 zip: Tel: Fax:

Real Time Clock Module with I2C Bus

CAT28C17A 16K-Bit CMOS PARALLEL EEPROM

FEATURES APPLICATIONS C1 C2 C3 C4 C5 C6 C7 C8 R8/C9 R7/C10 R6/C11. Figure 1 Typical Application Circuit

256K x 16 4Mb Asynchronous SRAM

RM24C32DS 32-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus

IS62/65WVS1288FALL IS62/65WVS1288FBLL. 128Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE DESCRIPTION

RM24C128C-L 128-Kbit 1.65V Minimum Non-volatile Serial EEPROM Memory I 2 C Bus

1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

Digital Thermometer and Thermostat

IS25WD020/ Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory With 80 MHz Dual-Output SPI Bus Interface FEATURES GENERAL DESCRIPTION

My-MS. MM27C ,072 x 8 CMOS EPROM PRELIMINARY INFORMATION ISSI IS27C010 FEATURES DESCRIPTION FUNCTIONAL BLOCK DIAGRAM

FM24CL64 64Kb Serial 3V F-RAM Memory Features

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark

512KX8 CMOS S-RAM (Monolithic)

CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9

FM24C Kb FRAM Serial Memory Features

RM24C512C-L 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus

CAT28C K-Bit Parallel EEPROM

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations

Transcription:

18K I C CMOS Serial EEPROM Device Selection Table Part Number Range Max. Clock Frequency Temp. Ranges Temperature ranges: - Industrial (I): -0 C to +8 C - Automotive (E): -0 C to +1 C A8 1.-.V 00 khz (1) I LC18.-.V 00 khz I, E FC18 1.-.V 1 MHz () I Note 1: khz for <.V. : 00 khz for <.V. Features: Single supply with operation down to 1.V for A8/FC18 devices,.v for LC18 devices Low-Power CMOS Technology: - Write current ma, typical - Standby current na, typical -Wire Serial Interface, I C Compatible Cascadable up to Eight Devices Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce khz and 00 khz Clock Compatibility 1 MHz Clock for FC Versions Page Write Time ms, typical Self-Timed Erase/Write Cycle -Byte Page Write Buffer <adjust per device> Hardware Write-Protect ESD Protection >000V More than 1 Million Erase/Write Cycles Data Retention > 00 years Factory Programming Available Packages include 8-lead PDIP, SOIC, TSSOP, DFN, MSOP, and Chip Scale Packages Pb-free and RoHS Compliant Package Types A0 1 PDIP/SOIC TSSOP/MSOP 1 XX18 8 A0 Note 1: Pins A0 and are no-connects for the MSOP package only. : Available in I-temp, AA only. 1 XX18 8 Description: The Microchip Technology Inc. A8/LC18/ FC18 (XX18*) is a 1K x 8 (18 Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.V to.v). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to bytes of data. This device is capable of both random and sequential reads up to the 18K boundary. Functional address lines allow up to eight devices on the same bus, for up to 1 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIC (.90 mm and.8 mm), TSSOP, MSOP, DFN, and Chip Scale packages. Block Diagram I/O Control Logic I/O A0 Memory Control Logic XDEC HV Generator EEPROM Array Page Latches YDEC Sense Amp. R/W Control *XX18 is used in this document as a generic part number for the A8/LC18/FC18 devices. A0 DFN 1 8 XX18 CS (Chip Scale) A0 1 8 (TOP DOWN VIEW, BALLS NOT VISIBLE) 008 Microchip Technology Inc. DS1191Q-page 1

1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings ( )...V All inputs and outputs w.r.t.... -0.V to +1.0V Storage temperature...- C to +10 C Ambient temperature with power applied...-0 C to +1 C ESD protection on all pins... kv NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Electrical Characteristics: Industrial (I): = +1.V to.v TA = -0 C to +8 C Automotive (E): = +.V to.v TA = -0 C to 1 C Param. No. Sym. Characteristic Min. Max. Units Conditions D1 A0,,,, and pins: D VIH High-level input voltage 0. V D VIL Low-level input voltage 0. 0. D VHYS Hysteresis of Schmitt Trigger inputs (, pins) V V.V <.V 0.0 V.V (Note 1) D VOL Low-level output voltage 0.0 V IOL =.0 ma @ =.V IOL =.1 ma @ =.V D ILI Input leakage current ±1 μa VIN = or, = VIN = or, = D ILO Output leakage current ±1 μa VOUT = or D8 CIN, COUT Pin capacitance (all inputs/outputs) 10 pf =.0V (Note 1) TA = C, FCLK = 1 MHz D9 ICC Read Operating current 00 μa =.V, = 00 khz ICC Write ma =.V D10 ICCS Standby current 1 μa TA = -0 C to +8 C = = =.V A0,,, = μa TA = -0 C to 1 C = = =.V A0,,, = Note 1: This parameter is periodically sampled and not % tested. DS1191Q-page 008 Microchip Technology Inc.

TABLE 1-: AC CHARACTERISTICS AC CHARACTERISTICS Param. No. Electrical Characteristics: Industrial (I): = +1.V to.v TA = -0 C to +8 C Automotive (E): = +.V to.v TA = -0 C to 1 C Sym. Characteristic Min. Max. Units Conditions 1 FCLK Clock frequency THIGH Clock high time 000 00 TLOW Clock low time 00 00 TR and rise time (Note 1) TF and fall time (Note 1) THD:STA Start condition hold time 000 TSU:STA Start condition setup time 00 00 00 0 0 00 00 00 8 THD:DAT Data input hold time 0 ns (Note ) 9 TSU:DAT Data input setup time 10 TSU:STO Stop condition setup time 000 11 TSU: setup time 000 1 THD: hold time 00 khz 1.V <.V FC18 FC18 FC18 ns All except, FC18 FC18 FC18 ns 1. V <.V. V.V. V.V FC18 Note 1: Not % tested. CB = total capacitance of one bus line in pf. : As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region (minimum 00 ns) of the falling edge of to avoid unintended generation of Start or Stop conditions. : The combined TSP and VHYS specifications are due to new Schmitt Trigger inputs, which provide improved noise spike suppression. This eliminates the need for a TI specification for standard operation. : This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model, which can be obtained from Microchip s web site 008 Microchip Technology Inc. DS1191Q-page

TABLE 1-: AC CHARACTERISTICS (CONTINUED) AC CHARACTERISTICS Param. No. 1 TAA Output valid from clock (Note ) 1 TBUF Bus free time: Time the bus must be free before a new transmission can start 1 TOF Output fall time from VIH minimum to VIL maximum CB pf 1 TSP Input filter spike suppression ( and pins) 1 TWC Write cycle time (byte or page) Electrical Characteristics: Industrial (I): = +1.V to.v TA = -0 C to +8 C Automotive (E): = +.V to.v TA = -0 C to 1 C Sym. Characteristic Min. Max. Units Conditions 00 00 00 900 900 00 10 + 0.1CB FC18 FC18 ns All except, FC18 (Note 1) FC18 (Note 1) 0 ns All except, FC18 (Notes 1 and ) ms 18 Endurance 1,000,000 cycles C (Note ) Note 1: Not % tested. CB = total capacitance of one bus line in pf. : As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region (minimum 00 ns) of the falling edge of to avoid unintended generation of Start or Stop conditions. : The combined TSP and VHYS specifications are due to new Schmitt Trigger inputs, which provide improved noise spike suppression. This eliminates the need for a TI specification for standard operation. : This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model, which can be obtained from Microchip s web site at www.microchip.com. FIGURE 1-1: BUS TIMING DATA D IN 1 8 9 10 OUT 1 1 (protected) (unprotected) 11 1 DS1191Q-page 008 Microchip Technology Inc.

N D E1 E NOTE 1 b 1 e A c φ L1 L DS1191Q-page 18 008 Microchip Technology Inc.

PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: A8: 18 Kbit 1.V I C Serial EEPROM A8T: 18 Kbit 1.V I C Serial EEPROM (Tape and Reel) LC18: 18 Kbit.V I C Serial EEPROM LC18T: 18 Kbit.V I C Serial EEPROM (Tape and Reel) FC18: 18 Kbit High Speed I C Serial EEPROM FC18T: 18 Kbit High Speed I C Serial EEPROM (Tape and Reel) Temperature Range: I E = -0 C to +8 C = -0 C to +1 C Package: P = Plastic DIP (00 mil body), 8-lead SN = Plastic SOIC (.90 mm body), 8-lead SM = Plastic SOIC (.8 mm body), 8-lead ST = Plastic TSSOP (. mm), 8-lead MF = Dual, Flat, No Lead (DFN) (x mm body), 8-lead MS = Plastic Micro Small Outline (MSOP), 8-lead CS1K (1) = Chip Scale (CS), 8-lead (I-temp, AA, Tape and Reel only) Examples: a) A8-I/P: Industrial Temp., 1.V, PDIP package. b) A8T-I/SN: Tape and Reel, Industrial Temp., 1.V, SOIC package. c) A8-I/ST: Industrial Temp., 1.V, TSSOP package. d) A8-I/MS: Industrial Temp., 1.V, MSOP package. e) LC18-E/P: Extended Temp.,.V, PDIP package. f) LC18-I/SN: Industrial Temp.,.V, SOIC package. g) LC18T-I/SN: Tape and Reel, Industrial Temp.,.V, SOIC package. h) LC18-I/MS: Industrial Temp.,.V, MSOP package. i) FC18-I/P: Industrial Temp., 1.V, High Speed, PDIP package. j) FC18-I/SN: Industrial Temp., 1.V, High Speed, SOIC package. k) FC18T-I/SN: Tape and Reel, Industrial Temp., 1.V, High Speed, SOIC package l) A8T-I/CS1K:Industrial Temp., 1.V, CS package, Tape and Reel Note 1: 1K indicates 10K technology 00 Microchip Technology Inc. DS1191P-page