512KX8 CMOS S-RAM (Monolithic)

Similar documents
16Mbit, 512KX32 CMOS S-RAM MODULE

16Mbit, 512KX32 CMOS S-RAM MODULE

White Electronic Designs

512Kx8 Monolithic SRAM, SMD

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

Asynchronous SRAM Operating Voltage: 5V Read Access Time: 40 ns Write Cycle Time: 30 ns Very Low Power Consumption (Pre-RAD)

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp.

4Mbit, 512KX8 5V Flash Memory (Monolithic)

128Kx8 CMOS MONOLITHIC EEPROM SMD

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

AS6C K X 8 BIT LOW POWER CMOS SRAM

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

My-MS. MM27C ,072 x 8 CMOS EPROM PRELIMINARY INFORMATION ISSI IS27C010 FEATURES DESCRIPTION FUNCTIONAL BLOCK DIAGRAM

Rev. No. History Issue Date Remark

Rad Hard 16 MegaBit 3.3V SRAM Multi- Chip Module AT68166H

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

64Mbit, 2MX32 3V Flash Memory Module

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb

8K X 8 BIT LOW POWER CMOS SRAM

CMOS SRAM. K6T4008C1B Family. Document Title. Revision History. 512Kx8 bit Low Power CMOS Static RAM. Revision No. History. Remark. Draft Date 0.

IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark

White Electronic Designs

MOS INTEGRATED CIRCUIT

512K bitstwo-wire Serial EEPROM

LY68L M Bits Serial Pseudo-SRAM with SPI and QPI

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

White Electronic Designs

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark

HM628128BI Series. 131,072-word 8-bit High speed CMOS Static RAM

MOS INTEGRATED CIRCUIT

16Mb(1M x 16 bit) Low Power SRAM

MOS INTEGRATED CIRCUIT

MX27C K-BIT [32K x 8] CMOS EPROM FEATURES GENERAL DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATIONS PIN DESCRIPTION

PCMCIA 2.1 Compliant Low Power SRAM Memory Cards 512 K through 2 Megabyte Cards with Rechargeable Battery and Isolated Control Line Circuit Feature

EDI8G322048C DESCRIPTION FEATURES PIN CONFIGURATION PIN NAMES

Rev. No. History Issue Date Remark

4Mb Async. FAST SRAM Specification

Rev. No. History Issue Date Remark

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005

L K 8 CMOS Dual Port RAM 3.3 Volt. Introduction. Features MATRA MHS

A29040D Series. 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory. Document Title. Revision History. AMIC Technology, Corp.

A29010 Series. 128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory. Document Title. Revision History. AMIC Technology, Corp.

IDT71016S/NS. CMOS Static RAM 1 Meg (64K x 16-Bit)

CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9

ACT S512K32 High Speed 16 Megabit SRAM Multichip Module

ACT F128K8 High Speed 1 Megabit Monolithic FLASH

IDT71V124SA/HSA. 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

4Mb Async. FAST SRAM A-die Specification

ISSI Preliminary Information January 2006

FEATURES. Single Power Supply Operation - Low voltage range: 2.70 V V

A29001/ Series. 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory. Document Title. Revision History. AMIC Technology, Corp.

64K x 16 1Mb Asynchronous SRAM

LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM

IDT7134SA/LA. HIGH-SPEED 4K x 8 DUAL-PORT STATIC SRAM

256K x 16 4Mb Asynchronous SRAM

3.3 Volt CMOS Bus Interface 8-Bit Latches

OPTIONS. Low Power Data Retention Mode. PIN ASSIGNMENT (Top View) I/O 16 I/O 17 I/O 18 I/O 19 I/O17 I/O18 I/O19. Vss I/O20 I/O21 I/O22 I/O23

512K x 8 4Mb Asynchronous SRAM

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

MB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET

FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS

A24C08. AiT Semiconductor Inc. ORDERING INFORMATION

SRAM Card with Two Rechargeable Batteries

Am27C Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM

128Mbit, 4MX32 5V Flash Memory Module

3.3V CMOS Static RAM for Automotive Applications 4 Meg (256K x 16-Bit)

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010

LY62W K X 16 BIT LOW POWER CMOS SRAM

A24C02. AiT Semiconductor Inc. ORDERING INFORMATION

DS1225Y 64k Nonvolatile SRAM

LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM

AS6C TINL 16M Bits LOW POWER CMOS SRAM

AS7C34098A-8TIN 256K X 16 BIT HIGH SPEED CMOS SRAM

HT93LC46 CMOS 1K 3-Wire Serial EEPROM

M Rev: /10

512Kx32 Synchronous Pipeline Burst SRAM

LY62L409716A 4M X 16 BIT LOW POWER CMOS SRAM

D0 - D8 INPUT REGISTER. RAM ARRAY 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9, 8,192 x 9 OUTPUT REGISTER RESET LOGIC RCLK REN1

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number.

WINTEC I. DESCRIPTION: III. TIMING

3.3V CMOS 1-TO-5 CLOCK DRIVER

LY62L K X 16 BIT LOW POWER CMOS SRAM

ISSI IS23SC4418 IS23SC KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC) IS23SC4418 IS23SC4428 FEATURES DESCRIPTION

IS62/65WVS5128GALL IS62/65WVS5128GBLL. 512Kx8 LOW VOLTAGE, FAST SERIAL SRAM with SPI, SDI and SQI INTERFACE KEY FEATURES DESCRIPTION

A24C64. AiT Semiconductor Inc. ORDERING INFORMATION

CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9

MB85R K (32 K 8) Bit. Memory FRAM DS E CMOS DESCRIPTIONS FEATURES PACKAGES FUJITSU SEMICONDUCTOR DATA SHEET

PCMCIA / JEIDA SRAM Card

ATF16V8B. High Performance Flash PLD. Features. Block Diagram. Description. Pin Configurations

ICE27C Megabit(128KX8) OTP EPROM

HX K x 8 STATIC RAM

25AA160A/B, 25LC160A/B

IS62/65WVS1288FALL IS62/65WVS1288FBLL. 128Kx8 LOW VOLTAGE, SERIAL SRAM with SPI, SDI and SQI INTERFACE DESCRIPTION

LY62L205016A 32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM

IDT54/74FCT244/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FEATURES: OEA OEB DA1 OA1 DB1 OB1 DA2 OA2 OB2 DB2 DA3 OA3

Transcription:

512KX8 CMOS S-RAM (Monolithic) Features Access Times: 55, 70, 85 and 100ns Package Option: 32-Pin Ceramic DIP, JEDEC Approved Pinout 36-Lead Ceramic SOJ JEDEC Approved Revolutionary Pinout 32-Lead Ceramic SOJ Industrial and Military Screening TTL Compatible Input/Output Single 5V (±10%) Power Data Retention Product Description The MES5128 is a Monolithic 4 Megabit Static Ram. The module is organized as 512Kx8 and packed in a multilayer High Temperature cofired ceramic package, designed for better speed performance. These modules are available in 55ns to 100ns versions. Low Power versions are also available. Block Diagram December, 2003 Rev. A 1 OF 13

Pin Names Truth Table (H=VIH L=VIL X=Don't Care) Pin Name Pin Function OE# WE# CS# I/O Mode A0 A18 Address Inputs X X H Hi-Z Standby D0 D7 Data Inputs/Outputs L H L DOUT Read CS# Chip Select X L L DIN Write WE# Write Enable H H L Hi-Z Out Disable OE# Output Enable GND Ground Vcc Power (+5V ±10%) NC No Connection Note: # Symbol means Active Low Signal Pin Configurations (Top View) DIP (D) CSOJ (J1) CSOJ (J) 1 A18 Vcc 32 1 A18 Vcc 32 2 A16 A15 31 2 A16 A15 31 3 A14 A17 30 3 A14 A17 30 4 A12 WE# 29 4 A12 WE# 29 5 A7 A13 28 5 A7 A13 28 6 A6 A8 27 6 A6 A8 27 7 A5 A9 26 7 A5 A9 26 8 A4 A11 25 8 A4 A11 25 9 A3 OE# 24 9 A3 OE# 24 10 A2 A10 23 10 A2 A10 23 11 A1 CS# 22 11 A1 CS# 22 12 A0 D7 21 12 A0 D7 21 13 D0 D6 20 13 D0 D6 20 14 D1 D5 19 14 D1 D5 19 15 D2 D4 18 15 D2 D4 18 16 GND D3 17 16 GND D3 17 December, 2003 Rev. A 2 OF 13

Absolute Maximum Ratings Item Rating Supply Voltage Relative to GND Voltage on Any Pin Relative to GND Operating Temperature Storage Temperature -0.5V to +7.0V -0.5V to Vcc +0.5V -55 C to +125 C -65 C to +150 C Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 VCC +0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating (Military) TA -55 +125 C Temperature (Industrial) -40 +85 C Capacitance (TA = +25 C, VIN = 0V, f = 1.0 MHz) Description Symbol Limits Unit Min Max Input Capacitance CIN 20 pf Output Capacitance COUT 20 pf These parameters are guaranteed, but not tested. December, 2003 Rev. A 3 OF 13

DC Characteristics (Vcc = 5V) Parameter Symbol Min Max Units Input Leakage Current ILI (1) -2 2 µa Output Leakage Current ILO (2) -2 2 µa Output Low Voltage VOL (3) 0.4 V Output High Voltage VOH (4) 2.4 V 55ns 5 Standby Supply Current ISB (5) 70ns 5 ma 85ns 5 100ns 3 55ns 50 Dynamic Operating Current ICC (6) 70ns 50 ma 85ns 50 100ns 50 Notes: (1) VCC = Max, VI/O = VCC to GND. (2) VI/O = VCC to GND, CS# VIH, OE# VIH. (3) VCC = Min, IOL = +2.1mA. (4) VCC = Min, IOH = -1.0mA. (5) VCC = Max, CS# = VIH, OE# = VIH, f = 5MHz. (6) VCC = Max, CS# = VIL, OE# = VIH, f = 5MHz. December, 2003 Rev. A 4 OF 13

AC Characteristics Write Cycle Parameter Symbol 55ns 70ns 85ns 100ns Limits Units Write Cycle Time TAVAV 55 70 85 100 min ns Address Set-up Time TAVWL 0 0 0 0 min ns Address Valid to End of Write TAVWH 50 60 75 80 min ns Data Valid to End of Write TDVWH 25 30 35 40 min ns Chip Select Low to End of Write TELWH 45 60 70 80 min ns Write Pulse Width TWLWH 40 50 60 60 min ns Address Hold from Write End TWHAX 0 0 0 0 min ns Data Hold Time TWHDX 0 0 0 0 min ns Write Enable Low to High Z TWLQZ* 30 30 30 30 max ns Output Active from End of Write TWHQX* 5 5 5 5 min ns Read Cycle Parameter Symbol 55ns 70ns 85ns 100ns Limits Units Read Cycle Time TAVAV 55 70 85 100 min ns Address Access Time TAVQV 55 70 85 100 max ns Output Hold from Addr. Change TAVQX 10 10 10 10 min ns Chip Select Access Time TELQV 55 70 85 100 max ns Output Enable to Output Valid TGLQV 25 35 40 50 max ns Chip Select to Output in Low Z TELQX* 5 5 5 5 min ns Chip Disable to Output in High Z TEHQZ* 20 25 30 30 max ns Output Enable to Output in Low Z TGLQX* 5 5 5 5 min ns Output Disable to Output in High Z TGHQZ* 20 25 30 30 max ns (*) - Parameter is guaranteed, but not tested. December, 2003 Rev. A 5 OF 13

December, 2003 Rev. A 6 OF 13

December, 2003 Rev. A 7 OF 13

AC Test Conditions Item Conditions Input Pulse Levels GND to 3.0V Input Rise and Fall Times 5ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load: 1 TTL Load, CL=100pF Note: For TWHQX, TWLQZ, TEHQZ, TELQX, TGHQZ and TGLQX CL = 5pF Data Retention Characteristics (Over Operating Temp Range) Test Conditions: GND = 0V, VCC=3V, CS# VCC-0.2V, VIH VCC - 0.2V, VIL 0.2V. Characteristic Symbol Min Typ. Max Unit VCC for Data Retention VDR 2.4 V D.R Quiescent Current ICCDR 100 (1) 400 (1) µa Chip Disable to D.R Time TCDR 0 nsec Operation Recovery Time TR 5 nsec (1) Lower D.R Currents are available upon request Data Retention (CS# - Controlled) December, 2003 Rev. A 8 OF 13

Outline Drawing for 32-Pin Ceramic DIP (D) December, 2003 Rev. A 9 OF 13

Outline Drawing for 32-Lead Ceramic SOJ (J1) December, 2003 Rev. A 10 OF 13

Outline Drawing for 36-Lead Ceramic SOJ (J) December, 2003 Rev. A 11 OF 13

Ordering Information (Standard Military Screened Products*) Model Number Speed Package MES5128D55MNL 55ns CDIP32 MES5128D70MNL 70ns CDIP32 MES5128D85MNL 85ns CDIP32 MES5128D100MNL 100ns CDIP32 MES5128J155MNL 55ns CSOJ32 MES5128J170MNL 70ns CSOJ32 MES5128J185MNL 85ns CSOJ32 MES5128J1100MNL 100ns CSOJ32 MES5128J55MNL 55ns CSOJ36 MES5128J70MNL 70ns CSOJ36 MES5128J85MNL 85ns CSOJ36 MES5128J100MNL 100ns CSOJ36 (*) - Contact Elisra for additional designs December, 2003 Rev. A 12 OF 13

Part Number Breakdown December, 2003 Rev. A 13 OF 13

2024 © technodocbox.com Privacy Policy | Terms of Service | Feedback