LITE-ON SEMICONDUCTOR ESD PROTECTION DEVICE STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 50 WATTS GENERAL DESCRIPTION The is low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). FEATURES Protects up to two I/O lines. Low capacitance: <0.8pF for high-speed interfaces Low clamping voltage IEC 61000-4-2, level 4 IEC 61000-4-2 ( ESD ), > ±27KV ( air ) ; > ±11KV ( contact ). APPLICATION High Definition Multimedia Interface (HDMI) Digital Visual Interface (DVI) 10/100/1000 Ethernet Monitors and Flat Panel Displays(D-SUB) USB 2.0 High Speed MECHANICAL DATA Case Material: "Green" molding compound UL flammability classification 94V-0 (No Br.Sb, Cl) Terminals: Lead Free Plating (Matte Tin Finish) Component in accordance to RoHs 2002/95/E 2 lines Protection SOT-323 SOT-323 DIM. MIN. MAX. A 0.90 1.10 A1 0.00 0.10 A2 0.90 1.00 b 0.20 0.40 c 0.08 0.15 D 2.00 2.20 E 1.15 1.35 E1 2.15 2.45 e 0.65 TYP e1 1.20 1.40 L 0.525 Ref L1 0.26 0.46 All Dimensions in millimeter PIN A SSIGNMENT 1, 2 I/O Lines 3 Ground MAXIMUM RATINGS (Tj= 25 unless otherwise noticed) Rating Symbol Value Unit Peak Pulse Power (tp = 8/20us) Ppk 50 W Peak Pulse Current (tp = 8/20us) Ipp 2.5 A Operating Junction Temperature Range TJ -55 to + 125 Storage Temperature Range Tstg -55 to + 150 Soldering Temperature, t max = 10s TL 260 ELECTRICAL CHARACTERISTICS (Tj= 25 unless otherwise noticed) Parameter Symbol Conditions MIn Typ Max Unit Reverse standoff voltage V RWM Any I/O lines to Gnd or Between I/O to I/O --- --- 5.0 V Breakdown voltage VBR IR = 1 ma, Any I/O lines to Gnd 6 -- 9 V Reverse leakage current IRM VDRM = 5.5V Any I/O lines to Gnd or I/O to I/O --- ---- 1 ua Clamping Voltage Junction capacitance V C C J IPP = 1A, tp = 8/20µs, Any I/O lines to Gnd 10.2 11 V IR= 2.5A, tp = 8/20µs, Any I/O to Gnd 10.2 20 V VR = 0V, f = 1MHz, Between I/O to I/O 0.3 0.4 pf VR = 0V, f = 1MHz, Any I/O lines to Gnd 0.7 0.8 pf REV. 0, Dec-2012, KSIR71
RATING AND CHARACTERISTIC CURVES Figure 1. 8/20 us pulse waveform according to IEC 61000-4-5 Figure 2. ESD pulse waveform according to IEC 61000-4-2 1000 1.2 Peak Pulse Power (W) 100 10 Ppp/Ppp (25 ) 0.8 0.4 1 TJ =25, tp (us) = 8/20 us exponentially decay waveform 1 10 100 1000 Pulse Time (us) 0 0 25 50 75 100 125 150 Junction Temperature ( ) Figure 3. Power Dissipation versus Pulse Time Figure 4. Peak pulse power versus TJ 2 TJ =25, f=1mhz, Vosc=100mV Any I/O pin to GND 1000.0 100.0 Capacitance (pf) 1 IR / IR (25 ) 10.0 1.0 0 0 1 2 3 4 5 Reverse Voltage (V) 0.1 25 50 75 100 125 Junction Temperature ( ) Figure 5. Typical Junction Capacitance Figure 6. Reverse Leakage Current versus TJ
ATING AND CHARACTERISTIC CURVES I/O1 +/-8KV ESD Contact discharge V (i/o) Figure 7. ESD Test Configuration Figure 8. Clamped +8 kv ESD voltage waveform Figure 9. Clamped -8 kv ESD voltage waveform
Application Information Figure 10. HDMI Interface ESD Protection Figure 11. DVI Interface ESD Protection
Application Information Figure 12. Ethernet Interface ESD Protection
Application Information Figure 13. D-SUB MDDI Interface ESD Protection Figure 14. USB 2.0 Interface ESD Protection
RATING AND CHARACTERISTIC CURVES Marking & Orientation Packaging Information DEVICE Q'TY/REEL (PCS) REEL DIA. (INCH) Q'TY/BOX (PCS) Q'TY/CARTON (PCS) 3000 7 45000 90K/180K SOT-323 Soldering Pad Layout DIMENSION DIM. MILLIMETERS INCHES Z 2.80 0.110 X 0.70 0.028 W 1.90 0.075 Y 0.90 0.035 V 1.00 0.039
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