25AA160A/B, 25LC160A/B
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1 Device Selection Table 25AAA/B, 25LCA/B 16K SPI Bus Serial EEPROM Part Number VCC Range Page Size Temp. Ranges Packages 25LCA V 16 Byte I,E P, SN, ST, MS 25AAA V 16 Byte I P, SN, ST, MS 25LCB V 32 Byte I,E P, SN, ST, MS 25AAB V 32 Byte I P, SN, ST, MS Features: Max. Clock 10 MHz Low-Power CMOS Technology 2048 x 8-bit Organization 16-Byte Page ( A version devices) 32-Byte Page ( B version devices) Write Cycle Time: 5 ms max. Self-Timed Erase and Write Cycles Block Write Protection: - Protect none, 1/4, 1/2 or all of array Built-In Write Protection: - Power-on/off data protection circuitry - Write enable latch - Write-protect pin Sequential Read High Reliability: - Endurance: 1,000,000 erase/write cycles - Data retention: > 200 years - ESD protection: > 00V Temperature Ranges Supported: - Industrial (I): - C to +85 C - Automotive (E): - C to +125 C Pb-Free and RoHS Compliant Pin Function Table Name CS SO WP VSS SI SCK HOLD VCC Function Chip Select Input Serial Data Output Write-Protect Ground Serial Data Input Serial Clock Input Hold Input Supply Voltage Description: The Microchip Technology Inc. 25AAA/B, 25LCA/B ( * ) are 16 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, traitio on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The is available in standard Pb-free packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead MSOP, and 8-lead TSSOP. Package Types (not to scale) CS SO WP VSS TSSOP/MSOP (ST, MS) VCC HOLD SCK SI CS SO WP VSS PDIP/SOIC (P, SN) VCC HOLD SCK SI * is used in this document as a generic part number for the 25AAA/B, 25LCA/B devices Microchip Technology Inc. DS21807D-page 1
2 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings ( ) VCC...7.0V All inputs and outputs w.r.t. VSS V to VCC +1.0V Storage temperature C to 150 C Ambient temperature under bias...- C to 125 C ESD protection on all pi...4 kv NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditio above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditio for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Industrial (I): TAMB = - C to +85 C VCC = 1.8V to 5.5V Automotive (E): TAMB = - C to +125 C VCC = 2.5V to 5.5V Param. No. Sym. Characteristic Min. Max. Units Test Conditio D001 VIH1 High-level input 2.0 VCC +1 V VCC 2.7V (Note) D002 VIH2 voltage 0.7 VCC VCC +1 V VCC < 2.7V (Note) D003 VIL1 Low-level input V VCC 2.7V (Note) D004 VIL2 voltage VCC V VCC < 2.7V (Note) D005 VOL Low-level output 0.4 V IOL = 2.1 ma D006 VOL voltage 0.2 V IOL = 1.0 ma, VCC < 2.5V D007 VOH High-level output VCC -0.5 V IOH = -0 μa voltage D008 ILI Input leakage current ±1 μa CS = VCC, VIN = VSS TO VCC D009 ILO Output leakage current D010 CINT Internal Capacitance (all inputs and outputs) D011 ICC Read Operating Current ±1 μa CS = VCC, VOUT = VSS TO VCC 7 pf TAMB = 25 C, CLK = 1.0 MHz, VCC = 5.0V (Note) ma ma VCC = 5.5V; FCLK = 10.0 MHz; SO = Open VCC = 2.5V; FCLK = 5.0 MHz; SO = Open D012 ICC Write 3 ma VCC = 5.5V D013 ICCS 5 μa CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, TAMB = - C TO +125 C 1 μa CS = VCC = 2.5V, Inputs tied to VCC or VSS, TAMB = - C TO +85 C Note: This parameter is periodically sampled and not % tested. DS21807D-page Microchip Technology Inc.
3 TABLE 1-2: AC CHARACTERISTICS AC CHARACTERISTICS Industrial (I): TAMB = - C to +85 C VCC = 1.8V to 5.5V Automotive (E): TAMB = - C to +125 C VCC = 2.5V to 5.5V Param. No. Sym. Characteristic Min. Max. Units Test Conditio 1 FCLK Clock Frequency 2 TCSS CS Setup Time TCSH CS Hold Time MHz MHz MHz 4 TCSD CS Disable Time 50 5 Tsu Data Setup Time THD Data Hold Time TR CLK Rise Time 500 (Note 1) 8 TF CLK Fall Time 500 (Note 1) 9 THI Clock High Time TLO Clock Low Time TCLD Clock Delay Time TCLE Clock Enable Time TV Output Valid from Clock Low THO Output Hold Time 0 (Note 1) 15 TDIS Output Disable Time 16 THS HOLD Setup Time (Note 1) 2.5V VCC 4.5V (Note 1) 1.8V VCC 2.5V (Note 1) Note 1: This parameter is periodically sampled and not % tested. 2: This parameter is not tested but eured by characterization. For endurance estimates in a specific application, please coult the Total Endurance Model which can be obtained from our web site: 3: TWC begi on the rising edge of CS after a valid write sequence and ends when the internal write cycle is complete Microchip Technology Inc. DS21807D-page 3
4 TABLE 1-2: AC CHARACTERISTICS (CONTINUED) AC CHARACTERISTICS Industrial (I): TAMB = - C to +85 C VCC = 1.8V to 5.5V Automotive (E): TAMB = - C to +125 C VCC = 2.5V to 5.5V Param. No. Sym. Characteristic Min. Max. Units Test Conditio 17 THH HOLD Hold Time THZ HOLD Low to Output High-Z 19 THV HOLD High to Output Valid TABLE 1-3: AC TEST CONDITIONS AC Waveform: VLO = 0.2V VHI = VCC - 0.2V (Note 1) VHI = 4.0V (Note 2) Timing Measurement Reference Level Input 0.5 VCC Output 0.5 VCC Note 1: For VCC 4.0V 2: For VCC > 4.0V (Note 1) (Note 1) (Note 1) 20 TWC Internal Write Cycle Time 5 ms (NOTE 3) 21 Endurance 1M E/W (NOTE 2) Cycles Note 1: This parameter is periodically sampled and not % tested. 2: This parameter is not tested but eured by characterization. For endurance estimates in a specific application, please coult the Total Endurance Model which can be obtained from our web site: 3: TWC begi on the rising edge of CS after a valid write sequence and ends when the internal write cycle is complete. DS21807D-page Microchip Technology Inc.
5 D N e E E1 NOTE b h h α A A2 φ c A1 L L1 β 2007 Microchip Technology Inc. DS21807D-page 17
6 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. Device: PART NO. X X /XX Device Tape & Reel 25AAA 25AAB 25LCA 25LCB Tape & Reel: Blank = T = Temperature Range: I = E = Temp Range Package 16 Kbit, 1.8V, 16 Byte Page SPI Serial EEPROM 16 Kbit, 1.8V, 32 Byte Page SPI Serial EEPROM 16 Kbit, 2.5V, 16 Byte Page SPI Serial EEPROM 16 Kbit, 2.5V, 32 Byte Page SPI Serial EEPROM Standard packaging Tape & Reel - C to+85 C - C to+125 C Examples: a) 25AAA-I/MS = 16 Kbit, 16-byte page, 1.8V Serial EEPROM, Industrial temp., MSOP package b) 25AAAT-I/SN = 16 Kbit, 16-byte page, 1.8V Serial EEPROM, Industrial temp., Tape & Reel, SOIC package c) 25LCBT-I/SN = 16 Kbit, 32-byte page, 2.5V Serial EEPROM, Industrial temp., Tape & Reel, SOIC package d) 25LCBT-I/ST = 16 Kbit, 32-byte page, 2.5V Serial EEPROM, Industrial temp., Tape & Reel, TSSOP package Package: MS = P = SN = ST = Plastic MSOP (Micro Small Outline), 8-lead Plastic DIP (300 mil body), 8-lead Plastic SOIC (3.90 mm body), 8-lead TSSOP, 8-lead 2007 Microchip Technology Inc. DS21807D-page 23
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Description The ACE24AC128 series are 131,072 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 16,384 words of 8 bits (one byte) each.
FEATURES. Single Power Supply Operation - Low voltage range: 2.70 V V
FEATURES Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit) - 70 ns access time - Uniform 4
AK93C45A / 55A / 65A / 75A
AK93C45A / 55A / 65A / 75A 1K / 2K / 4K / 8Kbit Serial CMOS EEPROM Features ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLATILE MEMORY WIDE VCC OPERATION Vcc = 1.8V 5.5V AK93C45A 1024 bits, 64 16 organization
Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL
FINAL 2 Megabit (262,144 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 70 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved pinout Plug
FAST CMOS OCTAL BUFFER/LINE DRIVER
FAST CMOS OCTAL BUFFER/LINE DRIVER IDT54/74FCT244T/AT/CT FEATURES: Std., A, and C grades Low input and output leakage 1µA (max.) CMOS power levels True TTL input and output compatibility: VOH = 3. (typ.)
Am27C Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM
FINAL 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time 45 ns maximum access time Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single
CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240
4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations
Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By
4 Megabit / 2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
4 Megabit / 2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector ZD FEATURES Single power supply operation Flexible Architecture with 4KB sectors - Full voltage range: 2.7-3.6 volt - Sector Erase
512KX8 CMOS S-RAM (Monolithic)
512KX8 CMOS S-RAM (Monolithic) Features Access Times: 55, 70, 85 and 100ns Package Option: 32-Pin Ceramic DIP, JEDEC Approved Pinout 36-Lead Ceramic SOJ JEDEC Approved Revolutionary Pinout 32-Lead Ceramic
1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010
BDTIC www.bdtic.com/atmel Features Single 3.3V ± 10% Supply Fast Read Access Time 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write
CMOS PARALLEL-TO-SERIAL FIFO 1,024 x 16
CMOS PARALLEL-TO-SERIAL FIFO IDT72125 FEATURES: 25ns parallel port access time, 35ns cycle time 50MHz serial shift frequency ide x16 organization offering easy expansion Low power consumption (50mA typical)
1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations
Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for
GT24C64 2-WIRE. 64K Bits. Serial EEPROM
GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
3.3V CMOS Static RAM for Automotive Applications 4 Meg (256K x 16-Bit)
.V CMOS Static RAM for Automotive Applicatio Meg (25K x -Bit) IDTVYS IDTVYL Features 25K x advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle
GT24C256 2-WIRE. 256K Bits. Serial EEPROM
GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any
GT25C256 SPI. 256K Bits. Serial EEPROM
GT25C256 SPI 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time
Pm25LD512C FEATURES GENERAL DESCRIPTION. 512Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
512Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512C FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V Memory Organization
GT24C WIRE. 1024K Bits. Serial EEPROM
GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at
Fremont Micro Devices, Inc.
FEATURES Low voltage and low power operations: FT24C02/04/08/16: V CC = 2.5V to 5.5V FT24C02A/04A/08A/16A: V CC = 1.8V to 5.5V Maximum Standby current < 1µA (typically 0.02µA and 0.06µA @ 1.8V and 5.5V
HIGH TEMPERATURE 4MB SPI SERIAL FLASH MEMORY IC
HIGH TEMPERATURE 4MB SPI SERIAL FLASH MEMORY IC PART NUMBER 4MB08SF04 CMOS 3.0 Volt-only 8-bit CHARACTERISTICS Single Voltage Read and Write Operations 2.7-3.6V Serial Interface Architecture SPI Compatible:
LOW-VOLTAGE 24-BIT BUS EXCHANGE SWITCH
LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH IDT74CBTLV6 FEATURES: 5Ω A/B bi-directional switch Isolation Under Power-Off Conditions Over-voltage tolerant Latch-up performance
1K-16K Microwire Compatible Serial EEPROMs
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire
24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration
Two-Wire Serial EEPROM Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) Low-voltage Operation 1.8 (VCC = 1.8V to 5.5V) Operating Ambient Temperature: -40 C to +85 C Internally Organized 1024 X 8 (8K),
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. APPLICATION NOTE A V A I L A B L E AN61 16K X25160 2K x 8 Bit SPI Serial
PI4IOE5V bit general purpose outputs for 1MHz I 2 C bus
Features Operation power supply voltage from 2.3V to 5.5V 4-bit I 2 C-bus GPO 1 MHz I 2 C-bus interface with 30 ma SDA sink capability for 4000pF Latched outputs with 25mA capability for directly driving
256K x 16 4Mb Asynchronous SRAM
FP-BGA Commercial Temp Industrial Temp 256K x 16 4Mb Asynchronous SRAM GS74117AX 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation: 130/105/95
SRAM Card with Two Rechargeable Batteries
Datasheet SRAM Card with Two Rechargeable Batteries Version 1.3 Preliminary Version 1.3 Page1 Document Version Version Description Date Editor Approved by 1.0 Preliminary 25, Mar., 2009 Amos Chung Alvin
MCP795W1X/MCP795W2X. 3V SPI Real-Time Clock Calendar with Enhanced Features and Battery Switchover. Device Selection Table.
3V SPI Real-Time Clock Calendar with Enhanced Features and Battery Switchover Device Selection Table Part Number 32 khz Boot-up SRAM (Bytes) Timekeeping Features: EEPROM (Kbits) Unique ID MCP795W20 No
512K x 8 4Mb Asynchronous SRAM
SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 512K x 8 4Mb Asynchronous SRAM GS74108ATP/J/X 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation:
8-megabit 2.5-volt or 2.7-volt DataFlash AT45DB081D
Features Single 2.5V or 2.7V to 3.6V Supply RapidS Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 User Configurable Page Size 256 Bytes per Page 264 Bytes per Page Page Size
3.3 Volt CMOS Bus Interface 8-Bit Latches
Q 3.3 Volt CMOS Bus Interface 8-Bit Latches QS74FCT3373 QS74FCT32373 FEATURES/BENEFITS Pin and function compatible to the 74F373 JEDEC spec compatible 74LVT373 and 74FCT373T IOL = 24 ma Com. Available
1K-16K Microwire Compatible Serial EEPROMs
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire
LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark
Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM ocument Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue June 2, 2006 Preliminary PRELIMINARY
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,024 X 9, 2,048 X 9, 4,096 x 9 and 8,192 x 9
Integrated Device Technology, Inc. CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1,24 X 9, 2,48 X 9, 4,96 x 9 and 8,192 x 9 IDT72421 IDT7221 IDT72211 IDT72221 IDT72231 IDT72241 IDT72251 FEATURES: 64 x 9-bit