24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges.

Size: px
Start display at page:

Download "24AA16/24LC16B. 16K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Temp. Ranges."

Transcription

1 6K I C Serial EEPROM Device Selection Table Part Number Features: Vcc Range Max. Clock Frequency Temp. Ranges A khz () I LC6B khz I, E Note : 00 khz for <.V Single supply with operation down to.7v A6 devices,.v for LC6B devices Low-power CMOS technology: - Active current ma, typical - Standby current, μa, typical -wire serial interface, I C compatible Schmitt Trigger inputs for noise suppression Output slope control to eliminate ground bounce 00 khz (.V) and 00 khz clock compatibility Page write time ms max. Self-timed erase/write cycle 6-byte page write buffer Hardware write-protect ESD protection >,000V More than million erase/write cycles Data retention > 00 years Factory programming available Packages include 8-lead PDIP, SOIC, TSSOP, MSOP, DFN and SOT-- Pb-free and RoHS compliant Temperature ranges: - Industrial (I): -0 C to +8 C - Automotive (E): -0 C to + C Description: The Microchip Technology Inc. A6/LC6B (XX6*) is a 6 Kbit Electrically Erasable PROM. The device is organized as eight blocks of 6 x 8-bit memory with a -wire serial interface. Low-voltage design permits operation down to.7v with standby and active currents of only μa and ma, respectively. The XX6 also has a page write capability for up to 6 bytes of data. The XX6 is available in the standard 8-pin PDIP, surface mount SOIC, TSSOP, x DFN and MSOP packages, and is also available in the -lead SOT- package. Package Types A0 VSS Vss Note: PDIP, MSOP SOT-- Block Diagram A0 VSS Vcc SOIC, TSSOP A0 VSS DFN Pins A0, and are not used by the XX6 (no internal connections). HV Generator I/O Control Logic Memory Control Logic XDEC EEPROM Array Page Latches I/O YDEC *XX6 is used in this document as a generic part number for the A6/LC6B devices. VSS Sense Amp. R/W Control 007 Microchip Technology Inc. DS70G-page

2 .0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings ( )...6.V All inputs and outputs w.r.t. VSS V to +.0V Storage temperature...-6 C to +0 C Ambient temperature with power applied...-0 C to + C ESD protection on all pins... kv NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE -: DC CHARACTERISTICS DC CHARACTERISTICS Industrial (I): TA = -0 C to +8 C, = +.7V to +.V Automotive (E): TA = -0 C to + C, = +.V to +.V Param. No. Symbol Characteristic Min. Typ. Max. Units Conditions D VIH, and pins D High-level input voltage 0.7 V D VIL Low-level input voltage 0. V D VHYS Hysteresis of Schmitt.0 V (Note ) Trigger inputs D VOL Low-level output voltage 0.0 V IOL =.0 ma, =.V D6 ILI Input leakage current ± μa VIN = VSS or D7 ILO Output leakage current ± μa VOUT = VSS or D8 CIN, COUT Pin capacitance (all inputs/outputs) 0 pf =.0V (Note ) TA = C, FCLK = MHz D9 ICC write Operating current ma =.V, = 00 khz D0 ICC read 0.0 ma D ICCS Standby current 0..0 Note : This parameter is periodically sampled and not 00% tested. : Typical measurements taken at room temperature. μa μa Industrial Automotive = = = VSS DS70G-page 007 Microchip Technology Inc.

3 TABLE -: AC CHARACTERISTICS Param. No. AC CHARACTERISTICS Industrial (I): Automotive (E): TA = -0 C to +8 C, = +.7V to +.V TA = -0 C to + C, = +.V to +.V Symbol Characteristic Min. Max. Units Conditions FCLK Clock frequency THIGH Clock high time TLOW Clock low time TR and rise time (Note ) TF and fall time 00 ns (Note ) 6 THD:STA Start condition hold time TSU:STA Start condition setup time THD:DAT Data input hold time 0 ns (Note ) 9 TSU:DAT Data input setup time 00 0 TSU:STO Stop condition setup time TAA Output valid from clock (Note ) TBUF Bus free time: Time the bus must be free before a new transmission can start TOF Output fall time from VIH minimum to VIL maximum TSP Input filter spike suppression ( and pins) TWC Write cycle time (byte or page) CB khz.v.v (Note ) (Note ).7V <.V (A6) 0 ns (Notes and ) ms 6 Endurance M cycles C, (Note ) Note : Not 00% tested. CB = total capacitance of one bus line in pf. : As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region (minimum 00 ns) of the falling edge of to avoid unintended generation of Start or Stop conditions. : The combined TSP and VHYS specifications are due to new Schmitt Trigger inputs which provide improved noise spike suppression. This eliminates the need for a TI specification for standard operation. : This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance Model which can be obtained from Microchip s web site 007 Microchip Technology Inc. DS70G-page

4 8-Lead Plastic Small Outline (SN or OA) Narrow,.90 mm Body [SOIC] D N e E E NOTE b h h α A φ c L L β Units MILLIMETERS Dimension Limits MIN NOM MAX Number of Pins N 8 Pitch e.7 BSC Overall Height A.7 Molded Package Thickness. Standoff Overall Width E 6.00 BSC Molded Package Width E.90 BSC Overall Length D.90 BSC Chamfer (optional) h Foot Length L Footprint L.0 REF Foot Angle φ 0 8 Lead Thickness c Lead Width b Mold Draft Angle Top α Mold Draft Angle Bottom β Notes:. Pin visual index feature may vary, but must be located within the hatched area.. Significant Characteristic.. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0. mm per side.. Dimensioning and tolerancing per ASME Y.M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only. Microchip Technology Drawing C0-07B 007 Microchip Technology Inc. DS70G-page

5 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range: Temperature Range Package A6: =.7V, 6 Kbit I C Serial EEPROM A6T: =.7V, 6 Kbit I C Serial EEPROM (Tape and Reel) LC6B: =.V, 6 Kbit I C Serial EEPROM LC6BT: =.V, 6 Kbit I C Serial EEPROM (Tape and Reel) I E = -0 C to +8 C = -0 C to + C Package: MC = x DFN, 8-lead P = Plastic DIP (00 mil body), 8-lead SN = Plastic SOIC (.90 mm body), 8-lead ST = Plastic TSSOP (. mm), 8-lead MS = Plastic Micro Small Outline (MSOP), 8-lead OT = SOT-, -lead (Tape and Reel only) Examples: a) A6-I/P: Industrial Temperature,.7V, PDIP package b) A6-I/SN: Industrial Temperature,.7V, SOIC package c) A6T-I/OT: Industrial Temperature,.7V, SOT- package, Tape and Reel d) LC6B-I/P: Industrial Temperature,.V, PDIP package e) LC6B-E/SN: Automotive Temp.,.V SOIC package f) LC6BT-I/OT: Industrial Temperature,.V, SOT- package, Tape and Reel 007 Microchip Technology Inc. DS70G-page

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number.

24AA01/24LC01B. 1K I 2 C Serial EEPROM. Description: Device Selection Table. Features: Package Types. Block Diagram. Part Number. K I C Serial EEPROM Device Selection Table Part Number Features: Range Max. Clock Frequency Temp. Ranges AA0.7-. 00 khz () I LC0B.-. 00 khz I, E Note : 00 khz for

More information

24AA64/24LC64/24FC64. 64K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Max.

24AA64/24LC64/24FC64. 64K I 2 C Serial EEPROM. Device Selection Table. Description: Features: Package Types. Block Diagram. Max. 64K I C Serial EEPROM Device Selection Table Part Number Features: Range Max. Clock Frequency Temp. Ranges 4AA64.7-. 400 khz () I 4LC64.-. 400 khz I, E 4FC64.7-. MHz () I Note : khz for

More information

24AA128/24LC128/24FC128

24AA128/24LC128/24FC128 18K I C CMOS Serial EEPROM Device Selection Table Part Number Range Max. Clock Frequency Temp. Ranges Temperature ranges: - Industrial (I): -0 C to +8 C - Automotive (E): -0 C to +1 C A8 1.-.V 00 khz (1)

More information

I 2 C Serial EEPROM Family Data Sheet

I 2 C Serial EEPROM Family Data Sheet 24AA00/24LC00/24C00 24AA01/24LC01B 24AA014/24LC014 24C01C 24AA02/24LC02B 24C02C 24AA024/24LC024 24AA025/24LC025 24AA04/24LC04B 24AA08/24LC08B 24AA16/24LC16B 24AA32A/24LC32A 24AA64/24LC64/24FC64 24AA128/24LC128/24FC128

More information

25AA160A/B, 25LC160A/B

25AA160A/B, 25LC160A/B Device Selection Table 25AAA/B, 25LCA/B 16K SPI Bus Serial EEPROM Part Number VCC Range Page Size Temp. Ranges Packages 25LCA 2.5-5.5V 16 Byte I,E P, SN, ST, MS 25AAA 1.8-5.5V 16 Byte I P, SN, ST, MS 25LCB

More information

25AA040/25LC040/25C040

25AA040/25LC040/25C040 Not recommended for new desig Please use AA00A or LC00A. AA00/LC00/C00 K SPI Bus Serial EEPROM Device Selection Table Part Number Features: Low-power CMOS technology: - Write current:, typical - Read current:

More information

1K-16K UNI/O Serial EEPROM Family Data Sheet

1K-16K UNI/O Serial EEPROM Family Data Sheet 11AA010/11LC010 11AA080/11LC080 11AA00/11LC00 11AA160/11LC160 11AA040/11LC040 1K-16K UNI/O Serial EEPROM Family Data Sheet Features: Single I/O, UNI/O Serial Interface Bus Low-Power CMOS Technology - 1

More information

93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C

93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 9AA6A/B/C, 9LC6A/B/C, 9C6A/B/C K Microwire Compatible Serial EEPROM Device Selection Table Part Number CC Range ORG Pin Word Size Temp Ranges Packages 9AA6A.8-. No 8-bit I P, SN, ST, MS, OT, MC 9AA6B.8--

More information

93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C

93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 9AA6A/B/C, 9LC6A/B/C, 9C6A/B/C K Microwire Compatible Serial EEPROM Device Selection Table Part Number CC Range ORG Pin Word Size Temp Ranges Packages 9AA6A.8-. No 8-bit I P, SN, ST, MS, OT, MC 9AA6B.8--

More information

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) AT24C01A/02/04/08/16 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128

More information

512K bitstwo-wire Serial EEPROM

512K bitstwo-wire Serial EEPROM General Description The provides 524,288 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 65,536 words of 8 bits each. The device is optimized for use in many

More information

A24C02. AiT Semiconductor Inc. ORDERING INFORMATION

A24C02. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION provides 2048 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 256 words of 8 bits each. The device is optimized for use in many industrial and

More information

A24C64. AiT Semiconductor Inc. ORDERING INFORMATION

A24C64. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION provides 65536 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 8192 words of 8 bits each. The is optimized for use in many industrial and commercial

More information

A24C08. AiT Semiconductor Inc. ORDERING INFORMATION

A24C08. AiT Semiconductor Inc.   ORDERING INFORMATION DESCRIPTION The provides 8192 bits of serial electrically erasable and programmable read-only memory (EEPROM), organized as 1024 words of 8 bits each. The device is optimized for use in many industrial

More information

HT24LC02A CMOS 2K 2-Wire Serial EEPROM

HT24LC02A CMOS 2K 2-Wire Serial EEPROM CMOS 2K 2-Wire Serial EEPROM Features Operating voltage 1.8V~.V for temperature -40 C to +8 C Low power consumption Operation: ma max. Standby: 2μA max. Internal organization: 26 8 2-wire serial interface

More information

ZD24C32A. I 2 C-Compatible (2-wire) Serial EEPROM. 32-Kbit (4,096 x 8) DATASHEET. Features. Description. Low Voltage Operation

ZD24C32A. I 2 C-Compatible (2-wire) Serial EEPROM. 32-Kbit (4,096 x 8) DATASHEET. Features. Description. Low Voltage Operation I 2 C-Compatible (2-wire) Serial EEPROM 32-Kbit (4,096 x 8) DATASHEET Features Low Voltage Operation VCC = 1.7V to 5.5V Internally Organized as 4,096 x 8 (32Kb) Additional Write lockable page I 2 C-compatible

More information

16K-128K I 2 C Serial EEPROM with Software Write Protection Family Data Sheet

16K-128K I 2 C Serial EEPROM with Software Write Protection Family Data Sheet 16K-128K I 2 C Serial EEPROM with Software Write Protection Family Data Sheet Device Selection Table Part Number Density Page Size VCC Range Package Temp. Ranges 24CW16X 16-Kbit 32-byte 1.6-5.5 SN, OT,

More information

深圳市馨晋商电子有限公司 Shenzhen XinJinShang Electronics Co. Ltd.

深圳市馨晋商电子有限公司 Shenzhen XinJinShang Electronics Co. Ltd. Two-Wire Serial EEPROM FEATURES Low voltage and low power operations: AT24C32N/64N: VCC = 1.8V to 5.5V Maximum Standby current

More information

I²C-Compatible (Two-Wire) Serial EEPROM 32 Kbit (4,096 x 8)

I²C-Compatible (Two-Wire) Serial EEPROM 32 Kbit (4,096 x 8) I²C-Compatible (Two-Wire) Serial EEPROM 32 Kbit (4,096 x 8) AT24C32E Features Low-Voltage Operation: V CC = 1.7V to 3.6V Internally Organized as 4,096 x 8 (32K) Industrial Temperature Range: -40 C to +85

More information

ISSI Preliminary Information January 2006

ISSI Preliminary Information January 2006 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM January 2006 FEATURES Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Low-voltage Operation Vcc = 1.8V to 5.5V Low

More information

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES Single 5.0V supply Low power CMOS technology - 1 ma active current typical ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization

More information

ACE24AC02A1 Two-wire Serial EEPROM

ACE24AC02A1 Two-wire Serial EEPROM Description The ACE24AC02A1 is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices

More information

FM24C04-S. 4Kb FRAM Serial Memory. Features. Pin Configuration. Description VDD NC A1 SCL SDA VSS. Ordering Information

FM24C04-S. 4Kb FRAM Serial Memory. Features. Pin Configuration. Description VDD NC A1 SCL SDA VSS. Ordering Information 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion (10 10 ) read/writes 10 year data retention at 85 C No write delay Advanced high-reliability

More information

Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) AT24C04B AT24C08B. Features. Description. Low-voltage and Standard-voltage Operation 1.

Two-wire Serial EEPROM 4K (512 x 8) 8K (1024 x 8) AT24C04B AT24C08B. Features. Description. Low-voltage and Standard-voltage Operation 1. Features Low-voltage and Standard-voltage Operation.8 (V CC =.8V to.v) Internally Organized x 8 (K), or 0 x 8 (8K) Two-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bidirectional

More information

ACE24AC16B Two-wire Serial EEPROM

ACE24AC16B Two-wire Serial EEPROM Description The ACE24AC16B is 16,384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 2,048 words of 8 bits (1 byte) each. The devices

More information

Two-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2)

Two-wire Serial EEPROM AT24C01A AT24C02 AT24C04 AT24C08 (1) AT24C16 (2) Features Low-voltage and Standard-voltage Operation.7 (V CC =.7V to.v).8 (V CC =.8V to.v) Internally Organized 8 x 8 (K), 6 x 8 (K), x 8 (4K), 04 x 8 (8K) or 048 x 8 (6K) Two-wire Serial Interface Schmitt

More information

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor

More information

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM January 2005 FEATURES Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Low power CMOS Active current less than 3.0

More information

ACE24AC64 Two-wire Serial EEPROM

ACE24AC64 Two-wire Serial EEPROM Description The ACE24AC64 series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. The

More information

ACE24AC02A3C Two-wire Serial EEPROM

ACE24AC02A3C Two-wire Serial EEPROM Description The ACE24AC02A3C is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices

More information

深圳市馨晋商电子有限公司电可擦可编程只读存储器 (EEPROM) AT24C02N VER:F4-1

深圳市馨晋商电子有限公司电可擦可编程只读存储器 (EEPROM) AT24C02N VER:F4-1 Two-Wire Serial EEPROM 2K (16-bit wide) 一 FEATURES Low voltage and low power operations: AT24C02N-XXX: VCC = 1.8V to 5.5V, Industrial temperature range (-40 to 85 ). Maximum Standby current < 1µA (typically

More information

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control

More information

24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration

24C08/24C16. Two-Wire Serial EEPROM. Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) General Description. Pin Configuration Two-Wire Serial EEPROM Preliminary datasheet 8K (1024 X 8)/16K (2048 X 8) Low-voltage Operation 1.8 (VCC = 1.8V to 5.5V) Operating Ambient Temperature: -40 C to +85 C Internally Organized 1024 X 8 (8K),

More information

ACE24AC128 Two-wire Serial EEPROM

ACE24AC128 Two-wire Serial EEPROM Description The ACE24AC128 series are 131,072 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 16,384 words of 8 bits (one byte) each.

More information

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C K (32K x 8) Paged CMOS E 2 PROM. Features. Description. Pin Configurations AT28C256 Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms

More information

GT24C64 2-WIRE. 64K Bits. Serial EEPROM

GT24C64 2-WIRE. 64K Bits. Serial EEPROM GT24C64 2-WIRE 64K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

Rev. No. History Issue Date Remark

Rev. No. History Issue Date Remark Preliminary 512K X 8 OTP CMOS EPROM Document Title 512K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 17, 1998 Preliminary 1.0 Change CE from VIL to VIH

More information

ILI2303. ILI2303 Capacitive Touch Sensor Controller. Specification

ILI2303. ILI2303 Capacitive Touch Sensor Controller. Specification Capacitive Touch Sensor Controller Specification Version: V1.03 Date: 2014/9/17 ILI TECHNOLOGY CORP. 8F, No.38, Taiyuan St., Jhubei City, Hsinchu County 302, Taiwan, R.O.C. Tel.886-3-5600099; Fax.886-3-5600055

More information

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations Features Fast Read Access Time - 90 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for

More information

I²C-Compatible (Two-Wire) Serial EEPROM 1 Kbit (128 x 8), 2 Kbit (256 x 8)

I²C-Compatible (Two-Wire) Serial EEPROM 1 Kbit (128 x 8), 2 Kbit (256 x 8) I²C-Compatible (Two-Wire) Serial EEPROM 1 Kbit (128 x 8), 2 Kbit (256 x 8) Features Low-Voltage Operation: V CC = 1.7V to 3.6V Internally Organized as 128 x 8 (1K) or 256 x 8 (2K) Industrial Temperature

More information

GT24C256 2-WIRE. 256K Bits. Serial EEPROM

GT24C256 2-WIRE. 256K Bits. Serial EEPROM GT24C256 2-WIRE 256K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

n/a PIC12F629-I/P (RC) n/a PIC12F629-I/SN (RC) n/a PIC12F675-I/P (RC) n/a PIC12F675-I/SN MICROCONTROLLER (RC)

n/a PIC12F629-I/P (RC) n/a PIC12F629-I/SN (RC) n/a PIC12F675-I/P (RC) n/a PIC12F675-I/SN MICROCONTROLLER (RC) DATA SHEET PIC Microcontrollers Order code Manufacturer code Description 73-36 n/a PICF69-I/P (RC) 73-364 n/a PICF69-I/SN (RC) 73-34 n/a PICF675-I/P (RC) 73-36 n/a PICF675-I/SN MICROCONTROLLER (RC) PIC

More information

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp.

LP621024E-I Series 128K X 8 BIT CMOS SRAM. Document Title 128K X 8 BIT CMOS SRAM. Revision History. AMIC Technology, Corp. 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue January 14, 2008 Preliminary 1.0 Final version release September 21, 2010

More information

RM24C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory I 2 C Bus. Features. Description

RM24C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory I 2 C Bus. Features. Description 64Kbit 2.7V Minimum Non-volatile Serial Memory I 2 C Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V 2-wire I 2 C interface Compatible with I 2 C bus

More information

GT24C32A 2-WIRE. 32K Bits. Serial EEPROM

GT24C32A 2-WIRE. 32K Bits. Serial EEPROM GT24C32A 2-WIRE 32K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any

More information

GT24C WIRE. 1024K Bits. Serial EEPROM

GT24C WIRE. 1024K Bits. Serial EEPROM GT24C1024 2-WIRE 1024K Bits Serial EEPROM Copyright 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at

More information

ISSI IS23SC4418 IS23SC KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC) IS23SC4418 IS23SC4428 FEATURES DESCRIPTION

ISSI IS23SC4418 IS23SC KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC) IS23SC4418 IS23SC4428 FEATURES DESCRIPTION 1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC) NOVEMBER 2001 FEATURES Standard CMOS process 1024 x 8 bits EEPROM organization Byte-wise addressing Byte-wise erase/write

More information

FM24C02B/04B/08B/16B 2-Wire Serial EEPROM

FM24C02B/04B/08B/16B 2-Wire Serial EEPROM FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Sep. 2009 FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Ver 1.7 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION

More information

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 128 Kilobit (16,384 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 45 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single

More information

AS6C K X 8 BIT LOW POWER CMOS SRAM

AS6C K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Initial Issue Add package 48-ball 8mm 10mm TFBGA Revised ORDERING INFORMATION in page 11 Jan.09.2012 July.12.2013 0 FEATURES Fast access

More information

Temperature Sensor for I 2 C BUS Monolithic IC MM3286 Series

Temperature Sensor for I 2 C BUS Monolithic IC MM3286 Series Temperature Sensor for I 2 C BUS Monolithic IC MM3286 Series Outline This IC is used as a digital temperature sensor that supports I 2 C BUS and has the built-in temperature sensor and - type A/D converter.

More information

I²C-Compatible (2-Wire) Serial EEPROM 8-Kbit (1,024 x 8)

I²C-Compatible (2-Wire) Serial EEPROM 8-Kbit (1,024 x 8) I²C-Compatible (2-Wire) Serial EEPROM 8-Kbit (1,024 x 8) Features Low-Voltage Operation: Vcc = 1.7V to 3.6V Internally Organized as 1,024 x 8 (8K) Industrial Temperature Range -40 C to +85 C I 2 C-Compatible

More information

RM25C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus. Features. Description

RM25C64C. 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus. Features. Description 64Kbit 2.7V Minimum Non-volatile Serial Memory SPI Bus Features Memory array: 64Kbit EEPROM-compatible serial memory Single supply voltage: 2.7V - 3.6V Serial peripheral interface (SPI) compatible Supports

More information

LY68L M Bits Serial Pseudo-SRAM with SPI and QPI

LY68L M Bits Serial Pseudo-SRAM with SPI and QPI REVISION HISTORY Revision Description Issue Date Rev. 0.1 Initial Issued May.6. 2016 Rev. 0.2 Revised typos May.19. 2016 Revised the address bit length from 32 bits to 24 bits Oct.13. 2016 0 FEATURES GENERAL

More information

Fremont Micro Devices, Inc.

Fremont Micro Devices, Inc. FEATURES Low voltage and low power operations: FT24C02/04/08/16: V CC = 2.5V to 5.5V FT24C02A/04A/08A/16A: V CC = 1.8V to 5.5V Maximum Standby current < 1µA (typically 0.02µA and 0.06µA @ 1.8V and 5.5V

More information

RM24C128C-L 128-Kbit 1.65V Minimum Non-volatile Serial EEPROM Memory I 2 C Bus

RM24C128C-L 128-Kbit 1.65V Minimum Non-volatile Serial EEPROM Memory I 2 C Bus 128-Kbit 1.65V Minimum Non-volatile Serial EEPROM Memory I 2 C Bus Preliminary Datasheet Features Memory array: 128Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2-wire I 2

More information

24LC08. 8K-Bit Serial EEPROM OVERVIEW FEATURES ORDERING INFORMATION

24LC08. 8K-Bit Serial EEPROM OVERVIEW FEATURES ORDERING INFORMATION OVERVIEW 2 TM The 24L08 serial EEPROM has a 8,192-bit (1,024-byte) capacity, supporting the standard I -bus serial interface. It is fabricated using ERMTE's most advanced MOS technology. One of its major

More information

RM24C32DS 32-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus

RM24C32DS 32-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus 32-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus Advance Datasheet Features Memory array: 32-Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2-wire I 2 C interface

More information

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 512 Kilobit (65,536 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 55 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single

More information

STMLS05 Applications Description Features Table 1: Device summary I2C base Package Order code address marking

STMLS05 Applications Description Features Table 1: Device summary I2C base Package Order code address marking Enhanced five-channel PMOS load switches Datasheet - production data Applications Smart phones Tablets Mobile device accessories Wearable devices Features Five-channel PMOS switches Input/output voltage

More information

I²C-Compatible (2-Wire) Serial EEPROM 16 Kbit (2,048 x 8)

I²C-Compatible (2-Wire) Serial EEPROM 16 Kbit (2,048 x 8) I²C-Compatible (2-Wire) Serial EEPROM 16 Kbit (2,048 x 8) Features Low-Voltage Operation: V CC = 1.7V to 5.5V Internally Organized as 2,048 x 8 (16K) Industrial Temperature Range: -40 C to +85 C I 2 C-Compatible

More information

DS1676 Total Elapsed Time Recorder, Erasable

DS1676 Total Elapsed Time Recorder, Erasable www.dalsemi.com Preliminary DS1676 Total Elapsed Time Recorder, Erasable FEATURES Records the total time that the Event Input has been active and the number of events that have occurred. Volatile Elapsed

More information

64K x 16 1Mb Asynchronous SRAM

64K x 16 1Mb Asynchronous SRAM TSOP, FP-BGA Commercial Temp Industrial Temp 64K x 16 1Mb Asynchronous SRAM GS71116AGP/U 7, 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 7, 8, 10, 12 ns CMOS low power operation:

More information

HT93LC46 CMOS 1K 3-Wire Serial EEPROM

HT93LC46 CMOS 1K 3-Wire Serial EEPROM CMOS 1K 3-Wire Serial EEPROM Features Operating voltage: 1.8V~5.5V Low power consumption Operating: 5mA max. Standby: 2µA max. User selectable internal organization 1K: 128 8 or 64 16 3-wire Serial Interface

More information

ACE24C512C Two-wire serial EEPROM

ACE24C512C Two-wire serial EEPROM Description The ACE24C512C is a 512-Kbit I 2 C-compatible Serial EEPROM (Electrically Erasable Programmable Memory) device. It contains a memory array of 64 K 8 bits, which is organized in 128-byte per

More information

HIGH TECH CHIPS, INC. HTC151 LED FLASHER. 1.0 General description.

HIGH TECH CHIPS, INC. HTC151 LED FLASHER. 1.0 General description. HTC151 LED FLASHER 1.0 General description. This circuit is designed to work as led flasher. LED s sequentially turn on and off according to the part used. D[0:2] inputs are used to control flashing frequency.

More information

128Kx8 CMOS MONOLITHIC EEPROM SMD

128Kx8 CMOS MONOLITHIC EEPROM SMD 128Kx8 CMOS MONOLITHIC EEPROM SMD 5962-96796 WME128K8-XXX FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead,

More information

RM24C512C-L 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus

RM24C512C-L 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus 512-Kbit 1.65V Minimum Non-volatile Serial EEPROM I 2 C Bus Preliminary Datasheet Features Memory array: 512Kbit non-volatile serial EEPROM memory Single supply voltage: 1.65V - 3.6V 2-wire I 2 C interface

More information

Debounced 8 8 Key-Scan Controller

Debounced 8 8 Key-Scan Controller Debounced 8 8 Key-Scan Controller Description The SN7326 is a 64 key, key-scan controller. It offloads the burden of keyboard scanning from the host processor. The SN7326 supports keypad matrix of up to

More information

FM24C02A 2-Wire Serial EEPROM

FM24C02A 2-Wire Serial EEPROM FM24C02A 2-Wire Serial EEPROM Apr. 2010 FM24C02A 2-wrie Serial EEPROM Ver 1.3 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS

More information

MB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET

MB85R M Bit (128 K 8) Memory FRAM CMOS DS E DESCRIPTIONS FEATURES FUJITSU SEMICONDUCTOR DATA SHEET FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit (128 K 8) MB85R1001 DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x

More information

MB85R K (32 K 8) Bit. Memory FRAM DS E CMOS DESCRIPTIONS FEATURES PACKAGES FUJITSU SEMICONDUCTOR DATA SHEET

MB85R K (32 K 8) Bit. Memory FRAM DS E CMOS DESCRIPTIONS FEATURES PACKAGES FUJITSU SEMICONDUCTOR DATA SHEET FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K (32 K 8) Bit MB85R256 DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words

More information

512K x 8 4Mb Asynchronous SRAM

512K x 8 4Mb Asynchronous SRAM SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 512K x 8 4Mb Asynchronous SRAM GS74108ATP/J/X 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation:

More information

8K X 8 BIT LOW POWER CMOS SRAM

8K X 8 BIT LOW POWER CMOS SRAM February 2007 FEATURES Access time :55ns Low power consumption: Operation current : 15mA (TYP.), VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible

More information

FAST CMOS OCTAL BUFFER/LINE DRIVER

FAST CMOS OCTAL BUFFER/LINE DRIVER FAST CMOS OCTAL BUFFER/LINE DRIVER IDT54/74FCT244T/AT/CT FEATURES: Std., A, and C grades Low input and output leakage 1µA (max.) CMOS power levels True TTL input and output compatibility: VOH = 3. (typ.)

More information

DS 1682 Total Elapsed Time Recorder with Alarm

DS 1682 Total Elapsed Time Recorder with Alarm DS 1682 Total Elapsed Time Recorder with Alarm www.dalsemi.com FEATURES Records the total time that the Event Input has been active and the number of events that have occurred. Volatile Elapsed Time Counter

More information

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark

LP62S16256G-I Series. Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM. Revision History. Rev. No. History Issue Date Remark Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM ocument Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue June 2, 2006 Preliminary PRELIMINARY

More information

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark

A23W8308. Document Title 262,144 X 8 BIT CMOS MASK ROM. Revision History. Rev. No. History Issue Date Remark Preliminary 262,144 X 8 BIT CMOS MASK ROM Document Title 262,144 X 8 BIT CMOS MASK ROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue November 11, 1999 Preliminary PRELIMINARY (November,

More information

256K x 16 4Mb Asynchronous SRAM

256K x 16 4Mb Asynchronous SRAM FP-BGA Commercial Temp Industrial Temp 256K x 16 4Mb Asynchronous SRAM GS74117AX 8, 10, 12 ns 3.3 V V DD Center V DD and V SS Features Fast access time: 8, 10, 12 ns CMOS low power operation: 130/105/95

More information

FM24CL64 64Kb Serial 3V F-RAM Memory Features

FM24CL64 64Kb Serial 3V F-RAM Memory Features 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits Unlimited Read/Write Cycles 45 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric

More information

FM24C Kb FRAM Serial Memory Features

FM24C Kb FRAM Serial Memory Features Preliminary FM24C512 512Kb FRAM Serial Memory Features 512Kbit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes

More information

3.3 Volt CMOS Bus Interface 8-Bit Latches

3.3 Volt CMOS Bus Interface 8-Bit Latches Q 3.3 Volt CMOS Bus Interface 8-Bit Latches QS74FCT3373 QS74FCT32373 FEATURES/BENEFITS Pin and function compatible to the 74F373 JEDEC spec compatible 74LVT373 and 74FCT373T IOL = 24 ma Com. Available

More information

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 2 Megabit (262,144 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 70 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved pinout Plug

More information

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb

AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY. Feb REVISION HISTORY Revision Description Issue Date 1.0 Initial issue Feb 2007 2.0 Add-in industrial temperature option for 28-pin 600 July 2017 mil PDIP. Standby current(isb1) reduced to be 20uA for I-grade

More information

FM24C16C-GTR. 16Kb Serial 5V F-RAM Memory. Features. Description. Pin Configuration NC NC NC VSS VDD WP SCL SDA. Ordering Information.

FM24C16C-GTR. 16Kb Serial 5V F-RAM Memory. Features. Description. Pin Configuration NC NC NC VSS VDD WP SCL SDA. Ordering Information. Preliminary FM24C16C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance (10 12 ) Read/Write Cycles 36 year Data Retention at +75 C NoDelay

More information

1K-16K Microwire Compatible Serial EEPROMs

1K-16K Microwire Compatible Serial EEPROMs 93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C 93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C 1K-16K Microwire

More information

GT34C02. 2Kb SPD EEPROM

GT34C02. 2Kb SPD EEPROM Advanced GT34C02 2Kb SPD EEPROM Copyright 2010 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the right to make changes to this specification and its products at any time without

More information

Digital Thermometer and Thermostat

Digital Thermometer and Thermostat General Description The DS75LV low-voltage (1.7V to 3.7V) digital thermometer and thermostat provides 9, 10, 11, or 12-bit digital temperature readings over a -55 C to +125 C range with ±2 C accuracy over

More information

FM24CL04 4Kb FRAM Serial Memory

FM24CL04 4Kb FRAM Serial Memory 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits Unlimited Read/Writes 45 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process

More information

CAT22C Bit Nonvolatile CMOS Static RAM

CAT22C Bit Nonvolatile CMOS Static RAM 256-Bit Nonvolatile CMOS Static RAM FEATURES Single 5V Supply Fast RAM Access Times: 200ns 300ns Infinite E 2 PROM to RAM Recall CMOS and TTL Compatible I/O Power Up/Down Protection 100,000 Program/Erase

More information

FM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information.

FM24C64C-GTR. 64Kb Serial 5V F-RAM Memory Features. Pin Configuration. Description A0 A1 A2 VSS VDD SCL SDA. Ordering Information. Preliminary FM24C64C 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (10 12 ) Read/Writes 36 Year Data Retention at +75

More information

8M-BIT AND 16M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE

8M-BIT AND 16M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE NXF00A M-BIT AND M-BIT SERIAL FLASH MEMORY WITH -PIN NXS INTERFACE FEATURES PRELIMINARY MAY Tailored for Portable and Mobile Media-Storage Ideal for portable/mobile applications that transfer and store

More information

Shanghai Belling Corp., Ltd BL55028 zip: Tel: Fax:

Shanghai Belling Corp., Ltd BL55028 zip: Tel: Fax: LCD Driver for 76 Display Units BL55028 1 General Description The BL55028 is a general LCD driver IC for 76 units LCD panel. It features a wide operating supply voltage range, incorporates simple communication

More information

ATF16V8B. High Performance Flash PLD. Features. Block Diagram. Description. Pin Configurations

ATF16V8B. High Performance Flash PLD. Features. Block Diagram. Description. Pin Configurations Features Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several

More information

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 CMOS SyncFIFO 64 x 8, 256 x 8, 512 x 8, 1,024 x 8, 2,048 x 8 and 4,096 x 8 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240

More information

DS28CM00. I²C/SMBus Silicon Serial Number

DS28CM00. I²C/SMBus Silicon Serial Number DS28CM00 I²C/SMBus Silicon Serial Number www.maxim-ic.com GENERAL DESCRIPTION The DS28CM00 is a low-cost, electronic registration number to provide an absolutely unique identity that can be determined

More information

GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application)

GT24C02. 2-Wire. 2Kb Serial EEPROM (Smart Card application) ADVANCED GT24C02 2-Wire 2Kb Serial EEPROM (Smart Card application) www.giantec-semi.com a0 1/19 Table of Content 1 FEATURES...3 2 DESCRIPTION...4 3 PIN CONFIGURATION...5 4 PIN DESCRIPTIONS...6 5 BLOCK

More information

Rev. No. History Issue Date Remark

Rev. No. History Issue Date Remark 128K X 8 BIT LOW VOLTAGE CMOS SRAM ocument Title 128K X 8 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. History Issue ate Remark 0.0 Initial issue February 19, 2002 Preliminary 0.1 Add 32L Pb-Free

More information

1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI - 1 - Preliminary - Revision H Table of Contents- 1. GENERAL DESCRIPTION... 4 2. FEATURES... 4 3. PIN CONFIGURATION

More information

FM24C Kb FRAM Serial Memory Features

FM24C Kb FRAM Serial Memory Features 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 10 Billion (10 10 ) Read/Writes 45 year Data Retention NoDelay Writes Advanced High-Reliability

More information