高功率環型面射型雷射. High Power Ring-Type Vertical-Cavity Surface-Emitting Laser 指導教授研究生 VCSEL. Superfast Photonic & Electronic Device Group (SPED)

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1 高功率環型面射型雷射 High Power Ring-Type Vertical-Cavity Surface-Emitting Laser 指導教授研究生許晉瑋博士楊英杰博士江長鴻洪梓健楊立群

2 Introduction V.S In Plane Laser Beam propagation is perpendicular to the wafer Beam propagation is parallel to the wafer Advantages of s I. The on wafer test can reduce the production cost and time II. Two-dimensional laser arrays are easy fabricated for many potential applications

3 The Applications of Local Area Networks Compact Disc CD-ROM Optic-Fibers Photodiode Laser Diode Optical Storage Laser Mouse MOST (Media Oriented System Transport) Logitech MX1000 Laser Cordless Mouse

4 Single Mode s Single mode far field pattern I. The single mode operation can show high performance in the data communication over single-mode fiber Multimode far field pattern II. The single spot or single mode pattern can prevent error judgment in the optical system, such as CD-ROM or laser mouse

5 The Divergence Angle of s The Beam Quality I. The low divergence angle make it easy couple to fiber II. The low divergence angle can reduce the complexity of optical system

6 The Problems of Single Mode s * The small aperture(<4μm) only support single mode operation The divergence angle and resistance is large * A large aperture has a narrow divergence angle and a low resistance Large-aperture generally supports multiple modes operation! * D. Zhou, and L. J. Mawst, IEEE J. Quantum Electron, 38, 1599 (2002).

7 Ideal Arrays Single element E In-phase coupling d d Supermode I I 0 =E 0 2 E: Electric Field I : Intensity S S Suppress out-of-phase

8 The Floral Ring-Type Array Top View Cross-Sectional View 20μm 200μm 6μm 5μm 17μm Light-emitting Region 5μm 17μm Zn-diffusion Region (disorder)

9 L-I Curve and FF Profile Power (mw) CW, RT=25 I th =7mA The device has much better mode stability than previous work does Current (ma) I=8mA I=10mA I=13mA I=15mA I=25mA P=1.13mW P=2.94mW P=6.07mW P=8.78mW P=13.26mW

10 Techniques Antiguide ARROW [1] Surface Relief [2] Oxide small aperture [3] Triangular holey structure[4] The Benchmark of 850nm-980nm single spatial mode s-high Power with Low divergence angle Max. Power (Single Spot) Divergence angle (FWHM) Operation Wavelength Differential Resistance 7.1mW nm,CW N.A N.A Slope Efficiency 6mW nm,CW 80-50Ω 0.76W/A 4.8mW ~8 850nm,CW N.A N.A 7mW nm,CW N.A ~1 W/A Our Device >7.5mW nm,CW 60~80Ω ~0.8W/A ULM photonics (Commercial) [5] 1.0mW ~9 850nm,CW 200Ω 0.4W/A

11 Conclusions By using Zn-diffusion and Proton Implantation techniques in the ring-type structure, we have achieved the following items: Single spot with a maximum power of >7.5 mw 5-6 of the narrow divergence angle ~60 Ω of low resistance

12 Publication list 1) C.-H. Jiang, Jin-Wei Shi, K.-M. Chen, J.-L. Yen, and Y. J. Yang, Vertical-Cavity-Surface-Emitting-Laser () with Ring Shaped Light-Emitting Aperture, 2004 台灣光電科技研討會, OPT, ) C.-H. Jiang, Jin-Wei Shi, K.-M. Chen, J.-L. Yen, and Y. J. Yang, Single-mode vertical-cavity-surface-emitting-laser () with ring shaped light-emitting aperture and low divergence angle performance Conf. Lasers and Electro-Optics, CLEO, JTuC83, ) Jin-Wei Shi, C.-H. Jiang, K.-M. Chen, J.-L. Yen, and Y. J. Yang, Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture, to be published in Appl. Phys. Lett., vol. 87, Jul., 2005.

ML-T-1550-FP-2G5 SERIES TECHNICAL SPECIFICATION

Document type: Document number: Version: Product specification TBD A1 Document name: ML-T-1550-FP-2G5 SERIES TECHNICAL SPECIFICATION Author: Reviewer: Approver: Release date: Pages: Sippe Savpe Uuspe 12-Apr-05

高功率環型面射型雷射. High Power Ring-Type Vertical-Cavity Surface-Emitting Laser 指導教授 研究生 VCSEL. Superfast Photonic & Electronic Device Group (SPED)

高功率環型面射型雷射. High Power Ring-Type Vertical-Cavity Surface-Emitting Laser 指導教授研究生 VCSEL. Superfast Photonic & Electronic Device Group (SPED)