What is 3D V-NAND and how does it differ from existing technology?

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1 FEATURES Print What is 3D V-NAND and how does it differ from existing technology? Samsung s unique and innovative 3D V-NAND ash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to t itself onto a xed horizontal space resulting in higher density and better performance utilising a smaller footprint. Optimise daily computing with TurboWrite technology for unrivalled read/write speeds Achieve the ultimate read/write performance to maximise your everyday computing experience with

2 Samsung s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario. * PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO) ** Random Write (QD32,120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO) Get into the fast lane with the improved RAPID mode Samsung s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth. * PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)

3 Guaranteed endurance and reliability bolstered by 3D V-NAND technology The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***. * TBW: Total Bytes Written ** TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1TB) *** Sustained Performance (250 GB): 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours Random Write test Compute longer with improved energy efficiency backed by 3D V-NAND

4 The 850 EVO delivers signi cantly longer battery life on your notebook with a controller optimised for 3D V- NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND. * Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO) Secure valuable data The 850 EVO comes forti ed with the latest hardware-based full disk encryption engine. Protect against overheating The 850 EVO s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data.

5 Level up to 850 EVO without any hassle In three simple steps the Samsung s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. Acquire an integrated in-house solution Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimised integration.