Gallium Arsenide PHEMT RF Power Field Effect Transistor
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1 Technical Data Available at Go to Tools Rev., 6/2005 Reference Design Library Gallium Arsenide PHEMT Power Field Effect Transistor Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W-CDMA Performance: -42 dbc ACPR, 3.55 GHz, 2 Volts, I DQ = 80 ma, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 db 0.0% Probability) Output Power 450 mwatt Power Gain db Efficiency 25% 4.5 Watts 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity N Suffix Indicates Lead- Free Terminations Reference Design Characteristics Typical Single-Channel W-CDMA Performance: -44 dbc ACPR, 2.45 GHz, 2 Volts, I DQ = 80 ma, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 db 0.0% Probability) Output Power 500 mwatt Power Gain 2 db Efficiency 28% MG35005NT MG35005MT BWA INPUT MATCH BWA GHz V GG BIAS V DD BIAS MATCH OUTPUT MG35005NT(MT) BWA GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper This reference design is designed to demonstrate the typical performance characteristics of the MG35005NT(MT) when applied for the GHz W- CDMA frequency band. The reference design is tuned for the best tradeoff between good W- CDMA linearity and good power capability and efficiency. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy-to-copy, fully functional amplifier designs. Where possible, it consists of no tune distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as building blocks for our customers. HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the model library and supported harmonic balance simulators, go to the following url: Inc., All rights reserved. Reference Design Data MG35005NT MG35005MT BWA
2 V GS V DD C9 C8 C7 C6 C5 C4 C3 C2 C C0 C4 C5 C3 C6 R Z7 INPUT L L2 Z Z2 Z3 Z4 Z5 Z6 Z8 Z9 Z0 Z Z2 Z3 OUTPUT C C8 C2 C7 Z, Z x Microstrip Z x Microstrip Z x Microstrip Z x 0.00 Microstrip Z x Microstrip Z6, Z x Microstrip Z x 0.00 Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Rogers 4350, 0.020, ε r = 3.50 Figure. MG35005NT(MT) BWA Reference Design Schematic Table. MG35005NT(MT) BWA Reference Design Component Designations and Values Part Description Value, P/N or DWG Manufacturer C 3.9 pf Chip Capacitor 0805J3R9BBT AVX C2.0 pf Chip Capacitor 0805JR0BBT AVX C3, C6 0 pf Chip Capacitors 00A00JP50X ATC C4, C5 00 pf Chip Capacitors 00A0JP50X ATC C5, C4 00 pf Chip Capacitors 00B0JP500X ATC C6, C3 000 pf Chip Capacitors 00B02JP500X ATC C7, C2 0. µf Chip Capacitors CDR33BX04AKWS Kemet C8, C 39K pf Chip Capacitors 200B393KP500X ATC C9, C0 22 µf Tantalum Capacitors T49X226K035AS Kemet C7.0 pf Chip Capacitor 0805JR0BBT AVX C8 5.0 pf Chip Capacitor 0805J5R0GBT AVX L 4.7 nh Chip Inductor LL202-F4N7K TOKO L2 8.2 nh Chip Inductor LL608-FHN2K TOKO R 75, /4 W % Chip Resistor D55342M07B75JOR Vishay MG35005NT MG35005MT BWA 2 Reference Design Data
3 C9 C8 C7 C2 C C0 C6 C3 C5 C4 C4 C3 R L L2 C5 C6 C C8 C2 C7 MG35005M Rev GHz Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MG35005NT(MT) BWA Reference Design Component Layout Reference Design Data MG35005NT MG35005MT BWA 3
4 CHARACTERISTICS G T, TRANSDUCER GAIN (db) G T GHz 40 V DS = 2 Vdc, I DQ = 80 ma PAE 3 2 f = 2.5 GHz, 8.5 P/A 3GPP W CDMA Γ S = Γ L = Figure 3. Transducer Gain and Power Added Efficiency PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) GHz V DS = 2 Vdc, I DQ = 80 ma f = 2.5 GHz, 8.5 P/A 3GPP W CDMA Γ S = Γ L = IRL ACPR Figure 4. W-CDMA ACPR and Input Return Loss ACPR (dbc) NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown. G T, TRANSDUCER GAIN (db) GHz 4 V DS = 2 Vdc, I DQ = 80 ma 8.5 P/A 3GPP W CDMA G T 40 PAE PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) GHz V DS = 2 Vdc, I DQ = 80 ma f = 2.45 GHz, 8.5 P/A 3GPP W CDMA IRL ACPR 0 ACPR (dbc) Figure 5. Transducer Gain and Power Added Efficiency Figure 6. W-CDMA ACPR and Input Return Loss NOTE: Data in Figures 5 and 6 is generated from the test circuit shown. MG35005NT MG35005MT BWA 4 Reference Design Data
5 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 5F -8-, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Available at Go to Tools Rev. Reference, 6/2005 Design Data MG35005NT MG35005MT BWA 5
Rating Symbol Value Unit Drain-Source Voltage V DSS 15 Vdc Total Device T C = 25 C Derate above 25 C
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