Micron Serial NOR Flash Memory

Transcription

1 Micron Serial NOR Flash Memory 3V, Multiple I/O, 64KB, Sector Erase MT25QL512AB 512Mb, 3V Multiple I/O Serial Flash Memory Features Features SPI-compatible serial bus interface Single and double transfer rate (STR/DTR) lock frequency 133 MHz (MAX) for all protocols in STR 66 MHz (MAX) for all protocols in DTR Dual/quad I/O commands for increased throughput up to 65 MB/s Supported protocols in both STR and DTR Extended I/O protocol Dual I/O protocol Quad I/O protocol Execute-in-place (XIP) PROGRAM/ERASE SUSPEND operations Volatile and nonvolatile configuration settings Software reset Additional reset pin for selected part numbers 3-byte and 4-byte address modes enable memory access beyond 128Mb Dedicated 64-byte OTP area outside main memory Readable and user-lockable Permanent lock with PROGRAM OTP command Erase capability Bulk erase Sector erase 64KB uniform granularity Subsector erase 4KB, 32KB granularity Security and write protection Volatile and nonvolatile locking and software write protection for each 64KB sector Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP[3:] and TB) define protected area size Program/erase protection during power-up R detects accidental changes to raw data Electronic signature JEDE-standard 3-byte signature (BA2h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 1, ERASE cycles per sector Data retention: 2 years (TYP) Options Marking Voltage V L Density 512Mb 512 Device stacking Monolithic A Lithography 45nm B Die revision A Pin configuration RESET and HOLD# 8 Production status Engineering samples ES Operating temperature range From 4 to +85 IT From 4 to +15 AT Special options Standard S Automotive A Standard security Packages JEDE-standard, RoHScompliant 16-pin SOP2, 3 mils SF (SO16W, SO16-Wide, SOI-16) 24-ball T-PBGA 5/6mm x 8mm (TBGA24) 12 Sector Size 64KB E 1 Products and specifications discussed herein are subject to change by Micron without notice.

2 Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron s part catalog search at To compare features and specifications by device type, visit ontact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - S IT ES Micron Technology Part Family 25Q = SPI NOR Voltage L = V U = V Density 64 = 64Mb (8MB) 128 = 128Mb (16MB) 256 = 256Mb (32MB) 512 = 512Mb (64MB) 1G = 1Gb (128MB) 2G = 2Gb (256MB) Stack A = 1 die/1 S# B = 2 die/1 S# = 4 die/1 S# Litho B = 45nm Die Revision A = Rev. A Pin onfiguration Option 1 = HOLD# pin 3 = RESET# pin 8 = RESET# & HOLD# pin Production Status Blank = Production ES = Engineering samples QS = Qualification samples Operating Temperature IT = 4 to +85 AT = 4 to +15 (Grade 2 AE-Q1) Special Options S = Standard A = Automotive quality Security Features = Standard default security Package odes 12 = 24-ball T-PBGA, 5/6 x 8mm (5 x 5 array) 14 = 24-ball T-PBGA, 5/6 x 8mm (6 x 4 array) S = 8-pin SOP2, 15 mil SE = 8-pin SOP2, 28 mil SF = 16-pin SOP2, 3 mil W7 = 8-pin W-PDFN, 6 x 5 mm sawn W8 = 8-pin W-PDFN, 8 x 6mm sawn W9 = 8-pin W-PDFN, 8 x 6mm sawn Sector size E = 64KB 2

3 Features ontents Device Description... 8 Device Diagram... 8 Advanced Security Protection... 8 Signal Assignments... 9 Signal Descriptions... 1 Package Dimensions 16-Pin SOP Package Dimensions 24-Ball T-PBGA Memory Organization Memory Map 512Mb Density Status Register Block Protection Settings Flag Status Register Extended Address Register Internal onfiguration Register Nonvolatile onfiguration Register... 2 Volatile onfiguration Register Supported lock Frequencies Enhanced Volatile onfiguration Register Security Registers Sector Protection Security Register Nonvolatile and Volatile Sector Lock Bits Security Volatile Lock Bit Security Register Device ID Data Serial Flash Discovery Parameter Data ommand Definitions Software RESET Operations RESET ENABLE and RESET MEMORY ommands READ ID Operations... 4 READ ID and MULTIPLE I/O READ ID ommands... 4 READ SERIAL FLASH DISOVERY PARAMETER Operation READ SERIAL FLASH DISOVERY PARAMETER ommand READ MEMORY Operations BYTE READ MEMORY Operations READ MEMORY Operations Timings WRITE ENABLE/DISABLE Operations READ REGISTER Operations WRITE REGISTER Operations LEAR FLAG STATUS REGISTER Operation PROGRAM Operations BYTE PROGRAM Operations PROGRAM Operations Timings... 6 ERASE Operations SUSPEND/RESUME Operations PROGRAM/ERASE SUSPEND Operations PROGRAM/ERASE RESUME Operations ONE-TIME PROGRAMMABLE Operations READ OTP ARRAY ommand PROGRAM OTP ARRAY ommand ADDRESS MODE Operations... 7 ENTER QUAD and RESET QUAD Operations

4 Features ENTER QUAD or RESET QUAD ommand... 7 YLI REDUNDANY HEK Operations State Table XIP Mode Activate or Terminate XIP Using Volatile onfiguration Register Activate or Terminate XIP Using Nonvolatile onfiguration Register onfirmation Bit Settings Required to Activate or Terminate XIP Terminating XIP After a ontroller and Memory Reset Power-Up and Power-Down Power-Up and Power-Down Requirements Power Loss and Interface Rescue Recovery Power Loss Recovery Interface Rescue Absolute Ratings and Operating onditions... 8 D haracteristics and Operating onditions A haracteristics and Operating onditions A Reset Specifications Program/Erase Specifications Revision History... 9 Rev. 12/ Rev. B 12/ Rev. A 7/

5 Features List of Figures Figure 1: Part Number Ordering Information... 2 Figure 2: Logic Diagram... 8 Figure 3: 16-Pin, Plastic Small Outline SO16 (Top View)... 9 Figure 4: 24-Ball TBGA (Balls Down)... 9 Figure 5: 3mm Body Width Package ode: SF Figure 6: 5 x 5 ball grid array 6mm x 8mm (Package ode: 12) Figure 7: Block Diagram Figure 8: Memory Array Segments Figure 9: Internal onfiguration Register Figure 1: Sector and Password Protection Figure 11: RESET ENABLE and RESET MEMORY ommand Figure 12: READ ID and MULTIPLE I/O READ ID ommands... 4 Figure 13: READ SERIAL FLASH DISOVERY PARAMETER ommand 5Ah Figure 14: READ 3h/13h Figure 15: FAST READ Bh/h Figure 16: DUAL OUTPUT FAST READ 3Bh/3h Figure 17: DUAL INPUT/OUTPUT FAST READ BBh/Bh Figure 18: QUAPUT FAST READ 6Bh/6h Figure 19: QUAD INPUT/OUTPUT FAST READ EBh/Eh Figure 2: QUAD INPUT/OUTPUT WORD READ E7h Figure 21: DTR FAST READ Dh/Eh Figure 22: DTR DUAL OUTPUT FAST READ 3Dh Figure 23: DTR DUAL INPUT/OUTPUT FAST READ BDh Figure 24: DTR QUAPUT FAST READ 6Dh Figure 25: DTR QUAD INPUT/OUTPUT FAST READ EDh Figure 26: WRITE ENABLE and WRITE DISABLE Timing Figure 27: READ REGISTER Timing Figure 28: WRITE REGISTER Timing Figure 29: LEAR FLAG STATUS REGISTER Timing Figure 3: PAGE PROGRAM ommand... 6 Figure 31: DUAL INPUT FAST PROGRAM ommand Figure 32: EXTENDED DUAL INPUT FAST PROGRAM ommand Figure 33: QUAD INPUT FAST PROGRAM ommand Figure 34: EXTENDED QUAD INPUT FAST PROGRAM ommand Figure 35: SUBSETOR and SETOR ERASE Timing Figure 36: BULK ERASE Timing Figure 37: PROGRAM/ERASE SUSPEND or RESUME Timing Figure 38: READ OTP ommand Figure 39: PROGRAM OTP ommand Figure 4: XIP Mode Directly After Power-On Figure 41: Power-Up Timing Figure 42: A Timing Input/Output Reference Levels Figure 43: Reset A Timing During PROGRAM or ERASE ycle Figure 44: Reset Enable and Reset Memory Timing Figure 45: Serial Input Timing Figure 46: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) Figure 47: Hold Timing Figure 48: Output Timing

6 Features List of Tables Table 1: Signal Descriptions... 1 Table 2: Sectors[123:] Table 3: Status Register Table 4: Protected Area Table 5: Flag Status Register Table 6: Extended Address Register Table 7: Nonvolatile onfiguration Register... 2 Table 8: Volatile onfiguration Register Table 9: Sequence of Bytes During Wrap Table 1: lock Frequencies STR (in MHz) Table 11: lock Frequencies DTR (in MHz) Table 12: Enhanced Volatile onfiguration Register Table 13: Sector Protection Register Table 14: Global Freeze Bit Table 15: Nonvolatile and Volatile Lock Bits Table 16: Volatile Lock Bit Register Table 17: Device ID Data Table 18: Extended Device ID Data, First Byte Table 19: Serial Flash Discovery Parameter Data Table 2: Parameter ID Table 21: ommand Set Table 22: RESET ENABLE and RESET MEMORY Operations Table 23: READ ID and MULTIPLE I/O READ ID Operations... 4 Table 24: READ MEMORY Operations Table 25: 4-BYTE READ MEMORY Operations Table 26: WRITE ENABLE/DISABLE Operations Table 27: READ REGISTER Operations Table 28: WRITE REGISTER Operations Table 29: LEAR FLAG STATUS REGISTER Operation Table 3: PROGRAM Operations Table 31: 4-BYTE PROGRAM Operations Table 32: ERASE Operations Table 33: SUSPEND/RESUME Operations Table 34: OTP ontrol Byte (Byte 64) Table 35: ENTER or EXIT 4-BYTE ADDRESS MODE Operations... 7 Table 36: ENTER or EXIT 4-BYTE ADDRESS MODE Operations... 7 Table 37: R ommand Sequence on Entire Device Table 38: R ommand Sequence on a Range Table 39: Operations Allowed/Disallowed During Device States Table 4: XIP onfirmation Bit Table 41: Effects of Running XIP in Different Protocols Table 42: Power-Up Timing and V WI Threshold Table 43: Absolute Ratings... 8 Table 44: Operating onditions... 8 Table 45: Input/Output apacitance... 8 Table 46: A Timing Input/Output onditions Table 47: D urrent haracteristics and Operating onditions Table 48: D Voltage haracteristics and Operating onditions Table 49: A haracteristics and Operating onditions Table 5: A RESET onditions

7 Features Table 51: Program/Erase Specifications

8 Device Description Device Description Device Diagram The MT25Q is a high-performance multiple input/output serial Flash memory device manufactured on 45nm NOR technology. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/ output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Figure 2: Logic Diagram V DQ S# W#/DQ2 DQ3/RESET#/HOLD# 1 DQ1 RESET# 2 Advanced Security Protection V SS Notes: 1. Depending on the selected device (see Part Numbering Ordering Information), DQ3 = DQ3/RESET or DQ3/HOLD. 2. This RESET pin is available on dedicated part numbers (see Part Numbering Ordering Information). The MT25Q offers an advanced security protection scheme where each sector can be independently locked, by either volatile or nonvolatile locking features. The nonvolatile locking configuration can also be locked, as well password-protected. See Block Protection Settings and Sector and Password Protection for more details. 8

9 Signal Assignments Signal Assignments Figure 3: 16-Pin, Plastic Small Outline SO16 (Top View) DQ3 2 V RESET#/DNU 3 DNU DNU DNU S# DQ DQ DNU DNU DNU DNU V SS W#/ DQ2 Notes: 1. See Part Number Ordering Information for complete package names and details. 2. DQ3 = DQ3/RESET# or DQ3/HOLD#, depending on the selected device (see Part Numbering Ordering Information). 3. RESET# or DNU, depending on the part number. Figure 4: 24-Ball TBGA (Balls Down) A DNU DNU DNU 3 RESET#/DNU B DNU V SS V DNU DNU S# DNU DNU W#/DQ2 D DNU DQ1 DQ 2 DQ3 DNU E DNU DNU DNU DNU DNU Notes: 1. See Part Number Ordering Information for complete package names and details. 2. DQ3 = DQ3/RESET# or DQ3/HOLD#, depending on the selected device (see Part Numbering Ordering Information). 3. RESET# or DNU, depending on the part number. 9

10 Signal Descriptions Table 1: Signal Descriptions Symbol Type Description The signal description table below is a comprehensive list of signals for the MT25Q family devices. All signals listed may not be supported on this device. See Signal Assignments for information specific to this device. S# Input hip select: When S# is driven HIGH, the device will enter standby mode, unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cycle is in progress. All other input pins are ignored and the output pins are tri-stated. On parts with the pin configuration offering a dedicated RESET# pin, however, the RESET# input pin remains active even when S# is HIGH. Driving S# LOW enables the device, placing it in the active mode. After power-up, a falling edge on S# is required prior to the start of any command. Input lock: Provides the timing of the serial interface. ommand inputs are latched on the rising edge of the clock. In STR commands or protocol, address and data inputs are latched on the rising edge of the clock, while data is output on the falling edge of the clock. In DTR commands or protocol, address and data inputs are latched on both edges of the clock, and data is output on both edges of the clock. RESET# Input RESET#: When RESET# is driven LOW, the device is reset and the outputs are tri-stated. If RE- SET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, data may be lost. The RESET# functionality can be disabled using bit 4 of the nonvolatile configuration register or bit 4 of the enhanced volatile configuration register. For pin configurations that share the DQ3 pin with RESET#, the RESET# functionality is disabled in QIO-SPI mode. HOLD# Input HOLD: Pauses serial communications with the device without deselecting or resetting the device. Outputs are tri-stated and inputs are ignored. The HOLD# functionality can be disabled using bit 4 of the nonvolatile configuration register or bit 4 of the enhanced volatile configuration register. HOLD# functionality is disabled in QIO-SPI mode or when DTR operation is enabled. W# Input Write protect: When LOW, the blocks defined by the block protection bits BP[3:] are protected against PROGRAM or ERASE operations. Status register bit 7 should be set to 1 to enable write protection. DQ[3:] I/O Serial I/O: The bidirectional DQ signals transfer address, data, and command information. When using legacy (x1) SPI commands in extended I/O protocol (XIO-SPI), DQ is an input and DQ1 is an output. DQ[3:2] are not used. When using dual commands in XIO-SPI or when using DIO-SPI, DQ[1:] are I/O. DQ[3:2] are not used. When using quad commands in XIO-SPI or when using QIO-SPI, DQ[3:] are I/O. V Supply ore and I/O power supply. V SS Supply ore and I/O ground connection. DNU Do not use. Must be left floating. N No connect. Not internally connected. 512Mb, 3V Multiple I/O Serial Flash Memory Signal Descriptions 1

11 Package Dimensions 16-Pin SOP2 512Mb, 3V Multiple I/O Serial Flash Memory Package Dimensions 16-Pin SOP2 Figure 5: 3mm Body Width Package ode: SF 1.3 ±.2 h x MIN/ 1.65 MAX.23 MIN/.32 MAX 7.5 ± MIN/8 MAX 2.5 ±.15.2 ±.1.33 MIN/.51 MAX 1.27 TYP Z.1 Z.4 MIN/ 1.27 MAX Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 11

12 Package Dimensions 24-Ball T-PBGA 512Mb, 3V Multiple I/O Serial Flash Memory Package Dimensions 24-Ball T-PBGA Figure 6: 5 x 5 ball grid array 6mm x 8mm (Package ode: 12) Seating plane.1 A A.79 TYP 24X Ø.4 ± Ball A1 ID Ball A1 ID A 4. B 8 ±.1 1. TYP D E 1. TYP MAX.2 MIN 6 ±.1 Notes: 1. All dimensions are in millimeters. 2. See Part Number Ordering Information for complete package names and details. 12

13 Memory Organization Memory Organization Figure 7: Block Diagram RESET# HOLD# W# S# ontrol logic High voltage generator 64 OTP bytes DQ DQ1 DQ2 DQ3 I/O shift register Address register and counter 256 byte data buffer Status register Y decoder Memory 256 bytes (page size) X decoder Note: 1. Each page of memory can be individually programmed, but the device is not page-erasable. 13

14 Memory Map 512Mb Density Memory Map 512Mb Density Table 2: Sectors[123:] Sector 32KB Subsector 4KB Subsector Start Address Range FF Fh 3FF FFFFh 246 End FF h 3FF FFFh FF Fh 1FF FFFFh FF h 1FF FFFh FF Fh FF FFFFh FF h FF FFFh F Fh 7F FFFFh F h 7F FFFh F Fh 3F FFFFh F h 3F FFFh 1 15 Fh FFFFh h FFFh Note: 1. See Part Number Ordering Information, Sector Size Part Numbers table for options. 14

15 Status Register Status Register Status register bits can be read from or written to using READ STATUS REGISTER or WRITE STATUS REGISTER commands, respectively. When the status register enable/ disable bit (bit 7) is set to 1 and W# is driven LOW, the status register nonvolatile bits become read-only and the WRITE STATUS REGISTER operation will not execute. The only way to exit this hardware-protected mode is to drive W# HIGH. Table 3: Status Register Bit Name Settings Description Notes 7 Status register write enable/disable = Enabled 1 = Disabled (default) 5 Top/bottom = Top 1 = Bottom (default) 6, 4:2 BP[3:] See Protected Area tables 1 Write enable latch = lear (default) 1 = Set Write in progress = Ready 1 = Busy Nonvolatile control bit: Used with W# to enable or disable writing to the status register. Nonvolatile control bit: Determines whether the protected memory area defined by the block protect bits starts from the top or bottom of the memory array. Nonvolatile control bit: Defines memory to be software protected against PROGRAM or ERASE operations. When one or more block protect bits is set to 1, a designated memory area is protected from PROGRAM and ERASE operations. Volatile control bit: The device always powers up with this bit cleared to prevent inadvertent WRITE, PRO- GRAM, or ERASE operations. To enable these operations, the WRITE ENABLE operation must be executed first to set this bit. Status bit: Indicates if one of the following command cycles is in progress: WRITE STATUS REGISTER WRITE NONVOLATILE ONFIGURATION REGISTER PROGRAM ERASE Notes: 1. The BULK ERASE command is executed only if all bits =. 2. Status register bit is the inverse of flag status register bit

16 Status Register Block Protection Settings Table 4: Protected Area Status Register ontent Protected Area Top/Bottom BP3 BP2 BP1 BP 64KB Sectors None 1 123: : : : : : : : : : : : : : : 1 None 1 1 : 1 1 1: : 1 1 7: : : : : : : : : : : : 16

17 Flag Status Register Table 5: Flag Status Register Flag status register bits are read by using READ FLAG STATUS REGISTER command. All bits are volatile and are reset to zero on power up. Status bits are set and reset automatically by the internal controller. Error bits must be cleared through the LEAR STATUS REGISTER command. Bit Name Settings Description 7 Program or erase controller = Busy 1 = Ready 6 Erase suspend = lear 1 = Suspend 5 Erase = lear 1 = Failure or protection error 4 Program = lear 1 = Failure or protection error 3 Reserved Reserved 2 Program suspend = lear 1 = Suspend 1 Protection = lear 1 = Failure or protection error Addressing = 3-byte addressing 1 = 4-byte addressing 512Mb, 3V Multiple I/O Serial Flash Memory Flag Status Register Status bit: Indicates whether one of the following command cycles is in progress: WRITE STATUS REGISTER, WRITE NONVOLATILE ONFIGURATION REGISTER, PROGRAM, or ERASE. Status bit: Indicates whether an ERASE operation has been or is going to be suspended. Error bit: Indicates whether an ERASE operation has succeeded or failed. Error bit: Indicates whether a PROGRAM operation has succeeded or failed. Status bit: Indicates whether a PROGRAM operation has been or is going to be suspended. Error bit: Indicates whether an ERASE or PROGRAM operation has attempted to modify the protected array sector, or whether a PROGRAM operation has attempted to access the locked OTP space. Status bit: Indicates whether 3-byte or 4-byte address mode is enabled. 17

18 Extended Address Register Table 6: Extended Address Register The 3-byte address mode can only access 128Mb of memory. To access the full device in 3-byte address mode, the device includes an extended address register that indirectly provides a fourth address byte A[31:24]. The extended address register bits [1:] operate as memory address bit A[25:24] to select one of the four 128Mb segments of the memory array. If 4-byte addressing is enabled, the extended address register settings are ignored. Bit Name Settings Description 7:2 A[31:26] Reserved 1: A[25:24] 11 = Highest 128Mb segment 1 = Third 128Mb segment 1 = Second 128Mb segment = Lowest 128Mb segment (default) Figure 8: Memory Array Segments 512Mb, 3V Multiple I/O Serial Flash Memory Extended Address Register Enables specified 128Mb memory segment. The default (lowest) setting can be changed to the highest 128Mb segment using bit 1 of the nonvolatile configuration register. 3FFFFFFh 3h 2FFFFFFh A[25:24] = 11 A[25:24] = 1 1FFFFFFh 2h A[25:24] = 1 FFFFFFh 1h A[25:24] = h The PROGRAM and ERASE operations act upon the 128Mb segment selected in the extended address register. The BULK ERASE operation erases the entire device. The READ operation begins reading in the selected 128Mb segment, but is not bound by it. In a continuous READ, when the last byte of the segment is read, the next byte output is the first byte of the next segment. The operation wraps to h; therefore, a download of the whole array is possible with one READ operation. The value of the extended address register does not change when a READ operation crosses the selected 128Mb boundary. 18

19 Internal onfiguration Register 512Mb, 3V Multiple I/O Serial Flash Memory Internal onfiguration Register The memory configuration is set by an internal configuration register that is not directly accessible to users. The user can change the default configuration at power up by using the WRITE NON- VOLATILE ONFIGURATION REGISTER. Information from the nonvolatile configuration register overwrites the internal configuration register during power on or after a reset. The user can change the configuration during operation by using the WRITE VOLATILE ONFIGURATION REGISTER or the WRITE ENHANED VOLATILE ONFIGURATION REGISTER commands. Information from the volatile configuration registers overwrite the internal configuration register immediately after the WRITE command completes. Figure 9: Internal onfiguration Register Nonvolatile configuration register Volatile configuration register and enhanced volatile configuration register Register download is executed only during the power-on phase or after a reset, overwriting configuration register settings on the internal configuration register. Register download is executed after a WRITE VOLATILE or ENHANED VOLATILE ONFIGURATION REGISTER command, overwriting configuration register settings on the internal configuration register. Internal configuration register Device behavior 19

20 Nonvolatile onfiguration Register Table 7: Nonvolatile onfiguration Register The nonvolatile configuration register is read from and written to using the READ NON- VOLATILE ONFIGURATION REGISTER and the WRITE NONVOLATILE ONFIGURA- TION REGISTER commands, respectively. A register download is executed during power-on or after reset, overwriting the internal configuration register settings that determine device behavior. Bit Name Settings Description Notes 15:12 Number of dummy clock cycles 11:9 XIP mode at power-on reset 8:6 Output driver strength 5 Double transfer rate protocol = 15 1 = 1 1 = = = = 15 (Default) = XIP: Fast read 1 = XIP: Dual output fast read 1 = XIP: Dual I/O fast read 11 = XIP: Quad output fast read 1 = XIP: Quad I/O fast read 11 = Reserved 11 = Reserved 111 = Disabled (Default) = Reserved 1 = 9 Ohms 1 = Reserved 11 = 45 Ohms 1 = Reserved 11 = 2 Ohms 11 = Reserved 111 = 3 Ohms (Default) = Enabled 1 = Disabled (Default) 4 Reset/hold = Disabled 1 = Enabled (Default) 3 Quad I/O protocol 2 Dual I/O protocol 1 128Mb segment select = Enabled 1 = Disabled (Default) = Enabled 1 = Disabled (Default) = Highest 128Mb segment 1 = Lowest 128Mb segment (Default) 512Mb, 3V Multiple I/O Serial Flash Memory Nonvolatile onfiguration Register Sets the number of dummy clock cycles subsequent to all FAST READ commands (See the ommand Set Table for default setting values). Enables the device to operate in the selected XIP mode immediately after power-on reset. Optimizes the impedance at V /2 output voltage. Set DTR protocol as current one. Once enabled, all commands will work in DTR. Enables or disables HOLD# or RESET# on DQ3. Enables or disables quad I/O command input (4-4-4 mode). Enables or disables dual I/O command input (2-2-2 mode). Selects the power-on default 128Mb segment for 3-byte address operations. See also the extended address register

21 Nonvolatile onfiguration Register Table 7: Nonvolatile onfiguration Register (ontinued) Bit Name Settings Description Notes Number of address bytes during command entry = Enable 4-byte address mode 1 = Enable 3-byte address mode (Default) Defines the number of address bytes for a command. Notes: 1. The number of cycles must be set according to and sufficient for the clock frequency, which varies by the type of FAST READ command, as shown in the Supported lock Frequencies table. An insufficient number of dummy clock cycles for the operating frequency causes the memory to read incorrect data. 2. When bits 2 and 3 are both set to, the device operates in quad I/O protocol. 21

22 Volatile onfiguration Register Table 8: Volatile onfiguration Register This register is read from and written to by the READ VOLATILE ONFIGURATION REGISTER and the WRITE VOLATILE ONFIGURATION REGISTER commands, respectively. A register download is executed after these commands, overwriting the internal configuration register settings that determine device memory behavior. Bit Name Settings Description Notes 7:4 Number of dummy clock cycles = default 1 = 1 1 = = = = default 3 XIP = Enable 1 = Disable (default) Sets the number of dummy clock cycles subsequent to all FAST READ commands (See the ommand Set Table for default setting values). Enables or disables XIP. 2 Reserved b = Fixed value. 1: Wrap = 16-byte boundary aligned 1 = 32-byte boundary aligned 1 = 64-byte boundary aligned 512Mb, 3V Multiple I/O Serial Flash Memory Volatile onfiguration Register 16-byte wrap: Output data wraps within an aligned 16-byte boundary starting from the 3-byte address issued after the command code. 32-byte wrap: Output data wraps within an aligned 32-byte boundary starting from the 3-byte address issued after the command code. 64-byte wrap: Output data wraps within an aligned 64-byte boundary starting from the 3-byte address issued after the command code. 11 = ontinuous (default) ontinuously sequences addresses through the entire array. 1 2 Notes: 1. The number of cycles must be set according to and sufficient for the clock frequency, which varies by the type of FAST READ command, as shown in the Supported lock Frequencies table. An insufficient number of dummy clock cycles for the operating frequency causes the memory to read incorrect data. 2. See the Sequence of Bytes During Wrap table. Table 9: Sequence of Bytes During Wrap Starting Address 16-Byte Wrap 32-Byte Wrap 64-Byte Wrap

23 Volatile onfiguration Register Supported lock Frequencies Table 1: lock Frequencies STR (in MHz) Note 1 applies to entire table Number of Dummy lock ycles FAST READ DUAL OUTPUT FAST READ DUAL I/O FAST READ QUAPUT FAST READ QUAD I/O FAST READ to Note: 1. Values are guaranteed by characterization and not 1% tested in production. Table 11: lock Frequencies DTR (in MHz) Note 1 applies to entire table Number of Dummy lock ycles FAST READ DUAL OUTPUT FAST READ DUAL I/O FAST READ QUAPUT FAST READ QUAD I/O FAST READ to Note: 1. Values are guaranteed by characterization and not 1% tested in production. 23

24 Enhanced Volatile onfiguration Register This register is read from and written to using the READ ENHANED VOLATILE ON- FIGURATION REGISTER and the WRITE ENHANED VOLATILE ONFIGURATION REGISTER commands, respectively. A register download is executed after these commands, overwriting the internal configuration register settings that determine device memory behavior. Table 12: Enhanced Volatile onfiguration Register Bit Name Settings Description Notes 7 Quad I/O protocol = Enabled 1 = Disabled (Default) 6 Dual I/O protocol = Enabled 1 = Disabled (Default) 5 Double transfer rate protocol = Enabled 1 = Disabled (Default, single transfer rate) 4 Reset/hold = Disabled 1 = Enabled (Default) 3 Reserved 2: Output driver strength = Reserved 1 = 9 Ohms 1 = Reserved 11 = 45 Ohms 1 = Reserved 11 = 2 Ohms 11 = Reserved 111 = 3 Ohms (Default) 512Mb, 3V Multiple I/O Serial Flash Memory Enhanced Volatile onfiguration Register Enables or disables quad I/O command input (4-4-4 mode). Enables or disables dual I/O command input (2-2-2 mode). Set DTR protocol as current one. Once enabled, all commands will work in DTR Enables or disables HOLD# or RESET# on DQ3. (Available only on specified part numbers.) Optimizes the impedance at V /2 output voltage. 1 1 Note: 1. When bits 6 and 7 are both set to, the device operates in quad I/O protocol. When either bit 6 or 7 is set to, the device operates in dual I/O or quad I/O respectively. When a bit is set, the device enters the selected protocol immediately after the WRITE EN- HANED VOLATILE ONFIGURATION REGISTER command. The device returns to the default protocol after the next power-on or reset. Also, the rescue sequence or another WRITE ENHANED VOLATILE ONFIGURATION REGISTER command will return the device to the default protocol. 24

25 Security Registers 512Mb, 3V Multiple I/O Serial Flash Memory Security Registers Security registers enable sector and password protection on multiple levels using nonvolatile and volatile register and bit settings (shown below). The applicable register tables follow. Figure 1: Sector and Password Protection Sector Protection Register (See Note 1) Memory Sectors n n 1 locked Last sector 1 locked rd sector locked 1 n Global Freeze Bit (See Note 2) 1 Nonvolatile Lock Bits locked 2nd sector 1st sector (See Note 3) (See Note 4) Volatile Lock Bits Notes: 1. Sector protection register. This 16-bit nonvolatile register includes two active bits[2:1] to enable sector and password protection. 2. Global freeze bit. This volatile bit protects the settings in all nonvolatile lock bits. 3. Nonvolatile lock bits. Each nonvolatile bit corresponds to and provides nonvolatile protection for an individual memory sector, which remains locked (protection enabled) until its corresponding bit is cleared to Volatile lock bits. Each volatile bit corresponds to and provides volatile protection for an individual memory sector, which is locked temporarily (protection is cleared when the device is reset or powered down). 5. Protection granularity is 64KB (124 sectors). 6. The first and last sectors will have volatile protections at the 4KB subsector level. Each 4KB subsector in these sectors can be individually locked by volatile lock bits setting; nonvolatile protections granularity remain at the sector level. 25

26 Sector Protection Security Register 512Mb, 3V Multiple I/O Serial Flash Memory Sector Protection Security Register Table 13: Sector Protection Register Bits Name Settings Description Notes 15:3 Reserved 1 = Default 2 Password protection lock 1 Sector protection lock 1 = Disabled (default) = Enabled 1 = Enabled, with password protection (default) = Enabled, without password protection Reserved 1 = Default Nonvolatile bit: When set to 1, password protection is disabled. When set to, password protection is enabled permanently; the 64-bit password cannot be retrieved or reset. Nonvolatile bit: When set to 1, nonvolatile lock bits can be set to lock/unlock their corresponding memory sectors; bit 2 can be set to, enabling password protection permanently. When set to, nonvolatile lock bits can be set to lock/ unlock their corresponding memory sectors; bit 2 must remain set to 1, disabling password protection permanently. 1, 2 1, 3, 4 Notes: 1. Bits 2 and 1 are user-configurable, one-time-programmable, and mutually exclusive in that only one of them can be set to. It is recommended that one of the bits be set to when first programming the device. 2. The 64-bit password must be programmed and verified before this bit is set to because after it is set, password changes are not allowed, thus providing protection from malicious software. When this bit is set to, a 64-bit password is required to reset the global freeze bit from to 1. In addition, if the password is incorrect or lost, the global freeze bit can no longer be set and nonvolatile lock bits cannot be changed. (See the Sector and Password Protection figure and the Global Freeze Bit Definition table). 3. Whether this bit is set to 1 or, it enables programming or erasing nonvolatile lock bits (which provide memory sector protection). The password protection bit must be set beforehand because setting this bit will either enable password protection permanently (bit 2 = ) or disable password protection permanently (bit 1 = ). 4. By default, all sectors are unlocked when the device is shipped from the factory. Sectors are locked, unlocked, read, or locked down as explained in the Nonvolatile and Volatile Lock Bits table and the Volatile Lock Bit Register Bit Definitions table. Table 14: Global Freeze Bit Bits Name Settings Description Global freeze bit 1 = Disabled (Default) = Enabled Volatile bit: When set to 1, all nonvolatile lock bits can be set to enable or disable locking their corresponding memory sectors. When set to, nonvolatile lock bits are protected from PROGRAM or ERASE commands. This bit should not be set to until the nonvolatile lock bits are set. Note: 1. The READ GLOBAL FREEZE BIT command enables reading this bit. When password protection is enabled, this bit is locked upon device power-up or reset. It cannot be changed without the password. After the password is entered, the UNLOK PASSWORD command resets this bit to 1 enabling programing or erasing the nonvolatile lock bits. After the bits are changed, the WRITE GLOBAL FREEZE BIT command sets this bit to, protecting the nonvolatile lock bits from program or erase operations. 26

27 Nonvolatile and Volatile Sector Lock Bits Security 512Mb, 3V Multiple I/O Serial Flash Memory Nonvolatile and Volatile Sector Lock Bits Security Table 15: Nonvolatile and Volatile Lock Bits Bit Details Nonvolatile Lock Bit Volatile Lock Bit Description Function Settings Enabling protection Disabling protection Reading the bit Each sector of memory has one corresponding nonvolatile lock bit When set to, locks and protects its corresponding memory sector from PROGRAM or ERASE operations during device reset or power-down. Because this bit is nonvolatile, the sector remains locked, protection enabled, until the bit is cleared to 1. 1 = Lock disabled = Lock enabled The bit is set to by the WRITE NONVOLATILE LOK BITS command, enabling protection for designated locked sectors. Programming a sector lock bit requires the typical byte programming time. All bits are cleared to 1 by the ERASE NONVOLATILE LOK BITS command, unlocking and disabling protection for all sectors simultaneously. Erasing all sector lock bits requires typical sector erase time. Bits are read by the READ NONVOLATILE LOK BITS command. Each sector of memory has one corresponding volatile lock bit; this bit is the sector write lock bit described in the Volatile Lock Bit Register table. When set to 1, locks and protects its corresponding memory sector from PROGRAM or ERASE operations. Because this bit is volatile, protection is temporary. The sector is unlocked, protection disabled, upon device reset or power-down. = Lock disabled 1 = Lock enabled The bit is set to 1 by the WRITE VOLATILE LOK BITS command, enabling protection for designated locked sectors. All bits are set to upon reset or power-down, unlocking and disabling protection for all sectors. Bits are read by the READ VOLATILE LOK BITS command. Volatile Lock Bit Security Register Table 16: Volatile Lock Bit Register One volatile lock bit register is associated with each sector of memory. It enables the sector to be locked, unlocked, or locked-down with the WRITE VOLATILE LOK BITS command, which executes only when sector lock down (bit 1) is set to. Each register can be read with the READ VOLATILE LOK BITS command. This register is compatible with and provides the same locking capability as the lock register in the Micron N25Q SPI NOR family. Bit Name Settings Description 7:2 Reserved Bit values are. 1 Sector lock down Sector write lock = Lock-down disabled (Default) 1 = Lock-down enabled = Write lock disabled (Default) 1 = Write lock enabled Volatile bit: Device always powers-up with this bit set to, so that sector lock down and sector write lock bits can be set to 1. When this bit set to 1, neither of the two volatile lock bits can be written to until the next power cycle. Volatile bit: Device always powers-up with this bit set to, so that PROGRAM and ERASE operations in this sector can be executed and sector content modified. When this bit is set to 1, PROGRAM and ERASE operations in this sector are not executed. 27

28 Device ID Data Device ID Data The device ID data shown in the tables here is read by the READ ID and MULTIPLE I/O READ ID operations. Table 17: Device ID Data Size (Bytes) Name ontent Value Assigned By Manufacturer ID (1 Byte total) h Manufacturer ID (1 Byte) 2h JEDE Device ID (3 Bytes total) 1h Memory Type (1 Byte) BAh = 3V Manufacturer BBh = 1.8V 2h Memory apacity (1 Byte) 22h = 2Gb 3h Indicates the number of remaining ID bytes (1 Byte) Unique ID (17 Bytes total) 21h = 1Gb 2h = 512Mb 19h = 256Mb 18h = 128Mb 17h = 64Mb 1h 4h Extended device ID (1 Byte) See Extended Device ID table Factory 5h Device configuration information (2 Bytes) h = Standard 13h:6h ustomized factory data (14 Bytes) Optional Table 18: Extended Device ID Data, First Byte Bit 7 Bit 6 Bit 5 1 Bit 4 Bit 3 Bit 2 2 Bit 1 Bit Reserved Technology 1 = 45nm 1 = Alternate BP scheme = Standard BP scheme Reserved HOLD#/RESET#: = HOLD 1 = RESET Additional HW RESET#: 1 = Available = Not available Sector size: = Uniform 64KB Notes: 1. For alternate BP scheme information, contact the factory. 2. Available for specific part numbers. See Part Number Ordering Information for details. 28

29 Serial Flash Discovery Parameter Data Data in these tables is read by the READ SERIAL FLASH DISOVERY PARAMETER operation. Table 19: Serial Flash Discovery Parameter Data ompliant with JEDE standard J Description 512Mb, 3V Multiple I/O Serial Flash Memory Serial Flash Discovery Parameter Data Address (Byte Mode) Address (Bit) SFDP signature h 7: 53h Data 1h 7: 46h 2h 7: 44h 3h 7: 5h SFDP revision Minor 4h 7: 5h Major 5h 7: 1h Number of parameter headers 6h 7: 1h Unused 7h 7: FFh Parameter ID() 8h 7: h Parameter minor revision 9h 7: 5h Parameter major revision Ah 7: 1h Parameter length (in DW) Bh 7: 1h Parameter table pointer h 7: 3h Dh 7: h Eh 7: h Fh 7: FFh Table 2: Parameter ID Description Byte Address Bits Data Notes Minimum sector erase sizes 3h 1: 1b Write granularity 2 1 WRITE ENABLE command required for writing to volatile status registers WRITE ENABLE command selected for writing to volatile status registers 3 4 Not used 7:5 111b 4KB ERASE command 31h 7: 2h 29

30 Serial Flash Discovery Parameter Data Table 2: Parameter ID (ontinued) Description Byte Address Bits Data Notes Supports FAST READ 32h 1 Address bytes 2:1 1b Supports double transfer rate clocking 3 1 Supports FAST READ 4 1 Supports FAST READ 5 1 Supports FAST READ 6 1 Not used 7 1 Reserved 33h 7: FFh Flash size (bits) 34h 7: FFh 35h 7: FFh 36h 7: FFh 37h 7: 1Fh FAST READ dummy cycle count 38h 4: 11b FAST READ number of mode bits 7:5 1b FAST READ command code 39h 7: EBh FAST READ dummy cycle count 3Ah 4: 111b FAST READ number of mode bits 7:5 1b FAST READ command code 3Bh 7: 6Bh FAST READ dummy cycle count 3h 4: 111b FAST READ number of mode bits 7:5 1b FAST READ command 3Dh 7: 3Bh FAST READ dummy cycle count 3Eh 4: 111b FAST READ number of mode bits 7:5 1b ommand code 3Fh 7: BBh Supports FAST READ 4h 1 Reserved 3:1 111b Supports FAST READ 4 1 Reserved 7:5 111b Reserved 43:41h 31:8 FFFFFFh Reserved 45:44h 15: FFFFh FAST READ dummy cycle count 46h 4: 111b FAST READ number of mode bits 7:5 1b FAST READ command code 47h 7: BBh Reserved 49:48h 15: FFFFh FAST READ dummy cycle count 4Ah 4: 11b FAST READ number of mode bits 7:5 1b FAST READ command code 4Bh 7: EBh Sector Type 1 size 4h 7: h 3

31 Serial Flash Discovery Parameter Data Table 2: Parameter ID (ontinued) Description Byte Address Bits Data Notes Sector Type 1 command code 4Dh 7: 2h Sector Type 2 size 4Eh 7: 1h Sector Type 2 code 4Fh 7: D8h Sector Type 3 size 5h 7: Fh Sector Type 3 code 51h 7: 52h Sector Type 4 size 52h 7: h Sector Type 4 code 53h 7: h Multiplier from typical erase time to maximum erase time 57h:54h 3: 1b Sector Type 1 ERASE time (TYP) 8:4 1b 1:9 1b Sector Type 2 ERASE time (TYP) 15:11 11b 17:16 1b Sector Type 3 ERASE time (TYP) 22:18 11b 24:23 1b Sector Type 4 ERASE time (TYP) 29:25 b Multiplier from typical time to maximum time for page or byte PROGRAM 31:3 b 5Bh:58h 3: 111b Page size 7:4 1b Page PROGRAM time (TYP) 12:8 111b 13 b Byte PROGRAM time, first byte (TYP) 17:14 111b 18 b Byte PROGRAM time, subsequent byte (TYP) 22:19 b 23 b 1 hip ERASE time (TYP) 28:24 1b 3:29 11b Reserved 31 1b Prohibited operations during PROGRAM SUSPEND 5Fh:5h 3: 11b Prohibited operations during ERASE SUSPEND 7:4 11b Reserved 8 1b PROGRAM RESUME to SUSPEND interval 12:9 b 2 SUSPEND in progress program maximum latency 17:13 11b 19:18 1b ERASE RESUME to SUSPEND interval 23:2 1b SUSPEND in progress erase maximum latency 28:24 11b 3:29 1b SUSPEND RESUME supported 31 b 31

32 Serial Flash Discovery Parameter Data Table 2: Parameter ID (ontinued) Description Byte Address Bits Data Notes PROGRAM RESUME command 6h 7: 7Ah PROGRAM SUSPEND command 61h 7: 75h RESUME command 62h 7: 7Ah SUSPEND command 63h 7: 75h Reserved 67h:64h 1: 11b Status register polling device busy 2 b 3 1b 7:4 1111b EXIT DEEP POWER-DOWN to next operation delay 12:8 1111b 14:13 1b EXIT DEEP POWER-DOWN command 22:15 ABh ENTER DEEP POWER-DOWN command 3:23 B9h Deep power-down supported 31 h mode disable sequence 6Bh:68h 3: 11b mode enable sequence 8:4 1_1b -4-4 mode supported 9 1b -4-4 mode exit method 15:1 _11b -4-4 mode entry method 19:16 1b Quad enable requirements 22:2 b HOLD and WP disable 23 1bh Reserved 31:24 FFh Volatile and nonvolatile register and WRITE ENABLE 6Fh: 6h 6: 1b Reserved 7 1b Soft reset and rescue sequence support 13: b EXIT 4-BYTE ADDRESS 23:14 _1111_11h ENTER 4-BYTE ADDRESS 31:24 11_11b Notes: 1. Per industry standards, 1µs is the minimum allowed. See the A haracteristics and Operating onditions for specification details. 2. Per industry standards, 64µs is the minimum allowed. See the A haracteristics and Operating onditions for specification details. 32

33 33 ommand Definitions Table 21: ommand Set Notes 1 and 2 apply to the entire table ommand Software RESET Operations ode ommand-address-data Extended SPI Dual SPI Quad SPI Address Bytes Extended SPI Dummy lock ycles RESET ENABLE 66h RESET MEMORY 99h READ ID Operations Dual SPI Quad SPI Data Bytes READ ID 9E/9Fh to 2 MULTIPLE I/O READ ID AFh to 2 READ SERIAL FLASH DISOVERY PARAMETER READ MEMORY Operations 5Ah to 3 READ 3h (4) 1 to 4 FAST READ Bh (4) to 4, 5 DUAL OUTPUT FAST READ 3Bh (4) to 4, 5 DUAL INPUT/OUTPUT FAST READ BBh (4) to 4, 5 QUAPUT FAST READ 6Bh (4) to 4, 5 QUAD INPUT/OUTPUT FAST READ EBh (4) to 4, 5 DTR FAST READ Dh (4) to 4, 5 DTR DUAL OUTPUT FAST READ 3Dh (4) to 4, 5 DTR DUAL INPUT/OUTPUT FAST READ BDh (4) to 4, 5 DTR QUAPUT FAST READ 6Dh (4) to 4, 5 DTR QUAD INPUT/OUTPUT FAST READ QUAD INPUT/OUTPUT WORD READ READ MEMORY Operations with 4-Byte Address EDh (4) to 4, 5 E7h (4) to 4 4-BYTE READ 13h to 5 4-BYTE FAST READ h to 5 4-BYTE DUAL OUTPUT FAST READ 3h to 5 Notes 512Mb, 3V Multiple I/O Serial Flash Memory ommand Definitions

34 34 Table 21: ommand Set (ontinued) Notes 1 and 2 apply to the entire table ommand 4-BYTE DUAL INPUT/OUTPUT FAST READ 4-BYTE QUAPUT FAST READ 4-BYTE QUAD INPUT/OUTPUT FAST READ ode ommand-address-data Extended SPI Dual SPI Quad SPI Address Bytes Extended SPI Dummy lock ycles Dual SPI Quad SPI Data Bytes Bh to 5 6h to 5 Eh to 5 4-BYTE DTR FAST READ Eh to 5 4-BYTE DTR DUAL INPUT/OUTPUT FAST READ 4-BYTE DTR QUAD INPUT/ OUTPUT FAST READ WRITE Operations BEh to 5 EEh to 5 WRITE ENABLE 6h WRITE DISABLE 4h READ REGISTER Operations READ STATUS REGISTER 5h to READ FLAG STATUS REGISTER 7h to LEAR FLAG STATUS REGISTER 5h READ NONVOLATILE ONFIGU- RATION REGISTER READ VOLATILE ONFIGURATION REGISTER READ ENHANED VOLATILE ON- FIGURATION REGISTER READ EXTENDED ADDRESS REG- ISTER WRITE REGISTER Operations B5h to 85h to 65h to 8h to WRITE STATUS REGISTER 1h WRITE NONVOLATILE ONFIGU- RATION REGISTER B1h Notes 512Mb, 3V Multiple I/O Serial Flash Memory ommand Definitions

35 35 Table 21: ommand Set (ontinued) Notes 1 and 2 apply to the entire table ommand WRITE VOLATILE ONFIGURA- TION REGISTER WRITE ENHANED VOLATILE ONFIGURATION REGISTER WRITE EXTENDED ADDRESS REG- ISTER PROGRAM Operations ode ommand-address-data Extended SPI Dual SPI Quad SPI Address Bytes Extended SPI Dummy lock ycles Dual SPI Quad SPI Data Bytes 81h h h PAGE PROGRAM 2h (4) 1 to DUAL INPUT FAST PROGRAM A2h (4) 1 to 256 4, 6 EXTENDED DUAL INPUT FAST PROGRAM D2h (4) 1 to 256 4, 6 QUAD INPUT FAST PROGRAM 32h (4) 1 to 256 4, 6 EXTENDED QUAD INPUT FAST PROGRAM PROGRAM Operations with 4-Byte Address 38h (4) 1 to 256 4, 6 4-BYTE PAGE PROGRAM 12h to BYTE QUAD INPUT FAST PRO- GRAM 4-BYTE QUAD INPUT EXTENDED FAST PROGRAM ERASE Operations 34h to Eh to KB SUBSETOR ERASE 52h (4) 4, 6 4KB SUBSETOR ERASE 2h (4) 4, 6 SETOR ERASE D8h (4) 4, 6 Bulk ERASE 7h ERASE Operations with 4-Byte Address 4-BYTE SETOR ERASE Dh BYTE 4KB SUBSETOR ERASE 21h SUSPEND/RESUME Operations PROGRAM/ERASE SUSPEND 75h PROGRAM/ERASE RESUME 7Ah Notes 512Mb, 3V Multiple I/O Serial Flash Memory ommand Definitions

36 36 Table 21: ommand Set (ontinued) Notes 1 and 2 apply to the entire table ommand ode ONE-TIME PROGRAMMABLE (OTP) Operations ommand-address-data Extended SPI Dual SPI Quad SPI Address Bytes Extended SPI Dummy lock ycles READ OTP ARRAY 4Bh (4) to 64 4, 5 PROGRAM OTP ARRAY 42h (4) 1 to 64 4, 6 4-BYTE ADDRESS MODE Operations ENTER 4-BYTE ADDRESS MODE B7h EXIT 4-BYTE ADDRESS MODE E9h QUAD PROTOOL Operations ENTER QUAD INPUT/OUTPUT MODE RESET QUAD INPUT/OUTPUT MODE Deep Power-Down Operations Dual SPI Quad SPI 35h F5h ENTER DEEP POWER DOWN B9h RELEASE FROM DEEP POWER- DOWN ADVANED SETOR PROTETION Operations ABh READ SETOR PROTETION 2Dh to PROGRAM SETOR PROTETION 2h READ VOLATILE LOK BITS E8h (4) 1 to 4, 7 WRITE VOLATILE LOK BITS E5h (4) 1 4, 6, 8 READ NONVOLATILE LOK BITS E2h to WRITE NONVOLATILE LOK BITS E3h ERASE NONVOLATILE LOK BITS E4h READ GLOBAL FREEZE BIT A7h to WRITE GLOBAL FREEZE BIT A6h READ PASSWORD 27h to WRITE PASSWORD 28h UNLOK PASSWORD 29h ADVANED SETOR PROTETION Operations with 4-Byte Address Data Bytes Notes 512Mb, 3V Multiple I/O Serial Flash Memory ommand Definitions