TELECOM EQUIPMENT PROTECTION: TRISIL

Transcription

1 SMP1LC-xxx TELECOM EQUIPMENT PROTECTION: TRISIL FEATURES Bidirectional crowbar protection Voltage range from 8V to 262V Low capacitance from 3 pf to 45pF 5V Low leakage current : I R =2µA max Holding current: I H = 15 ma min Repetitive peak pulse current : I PP = 1 A (1/1µs) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: Analog and digital line cards (xdsl, T1/ E1, ISDN...) Terminals (phone, fax, modem...) and central office equipment SCHEMATIC DIAGRAM SMB (JEDEC DO-214AA) DESCRIPTION The SMP1LC-xxx series is a low capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. Its low capacitance avoids any distortion of the signal and is compatible with digital line cards (xdsl, T1/E1, ISDN...). BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL195, IEC95 / CSA C22.2 and UL1459. They have UL94 V approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B approved (file: E136224) and comply with the following standards GR-189 Core, ITU-T-K2/K21, VDE433, VDE878, IEC and FCC part 68. July 22 - Ed: 8C 1/8

2 SMP1LC-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS STANDARD GR-189 Core First level GR-189 Core Second level GR-189 Core Intra-building Peak Surge Voltage (V) 25 1 ITU-T-K2/K ITU-T-K2 (IEC61-4-2) Voltage Waveform 2/1 µs 1/1 µs Required peak current (A) 5 1 Current waveform 2/1 µs 1/1 µs Minimum serial resistor to meet standard ( ) 5 2/1 µs 5 2/1 µs 15 2/1 µs 1 2/1 µs 8 15 VDE VDE IEC FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B /7 µs /6 ns ESD contact discharge ESD air discharge 1/7 µs /5 µs 1 5 1/7 µs 1.2/5 µs 1/16 µs 1/56 µs /31 µs 5/31 µs 1/2 µs 5/31 µs 8/2 µs 1/16 µs 1/56 µs 1 9/72 µs 25 5/32 µs THERMAL RESISTANCES Symbol Parameter Value Unit R th(j-a) Junction to ambient with recommended footprint 1 C/W R th(j-l) Junction to leads 2 C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C) Symbol V RM I RM V R I R V BR V BO I H I BO I PP C Parameter Stand-off voltage Leakage current at V RM Continuous reverse voltage Leakage current at V R Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance 2/8

3 SMP1LC-xxx ABSOLUTE RATINGS (T amb = 25 C) Symbol Parameter Value Unit I pp Repetitive peak pulse current: 1/1 µs 1 A 8/2 µs 25 1/56 µs 12 5/31 µs 15 1/16 µs 2 1/2 µs 25 2/1 µs 5 I FS Fail-safe mode : maximum current (note 1) 8/2 µs 5 ka I TSM Non repetitive surge peak on-state current (Sinusoidal) t = 2ms t = 16.6ms t =.2s t=2s I²t I²t value for fusing t = 16.6ms 3 A²s t = 2ms T L Maximum lead temperature for soldering during 1s 26 C T stg Tj Storage temperature range Maximum junction temperature -55to C C Note 1: in fail safe mode, the device acts as a short circuit A Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 1/1µs tr = 1µs tp = 1µs %IPP 1 5 tr tp t ELECTRICAL PARAMETERS (Tamb = 25 C) Type Dynamic Static I I R I RM V max. BO V H C C BO min. typ. typ. max. max. max max. max Note 1 Note 4 Note 5 Note 6 Note 2 Note 3 µa V µa V V ma V ma ma pf pf SMP1LC (typ) NA 75 SMP1LC NA 65 SMP1LC NA 55 SMP1LC SMP1LC SMP1LC SMP1LC SMP1LC SMP1LC SMP1LC SMP1LC Note 1: IR measured at VR guarantee VBR min VR Note 4: See funtional holding current test circuit 3 Note 2: See functional test circuit 1 Note 5: VR = 5V bias, VRMS=1V, F=1MHz Note 3: See test circuit 2 Note 6: VR = 2V bias, VRMS=1V, F=1MHz 3/8

4 SMP1LC-xxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (T j initial = 25 C) ITSM(A) F=5Hz 1 t(s) 1E-2 1E-1 1E+ 1E+1 1E+2 1E+3 Fig. 2: On-state voltage versus on-state current (typical values) 5 1 IT(A) Tj=25 C VT(V) Fig. 3: Relative variation of holding current versus junction temperature. Fig. 4: Relative variation of breakover voltage versus junction temperature. IH[Tj] / IH[Tj=25 C] Tj( C) VBO[Tj] / VBO[Tj=25 C] Tj( C) Fig. 5: Relative variation of leakage current versus junction temperature (typical values). Fig. 6: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout). 2 1 IRM[Tj] / IRM[Tj=25 C] 1 Zth(j-a)( CW) 1 VRM > 5V 1 1 VRM < 5V Tj( C) tp(s) 1 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 5E+2 4/8

5 SMP1LC-xxx Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values) C [VR] / C [VR=2V] Tj=25 C F=1MHz VRMS=1V.2 VR(V) TEST CIRCUIT 1 FOR DYNAMIC I BO AND V BO PARAMETERS 1 V / µs, di/dt < 1 A / µs, Ipp = 1 A 2 Ω 45 Ω 83 Ω 46 µh U 1 µf 66 Ω 47 Ω.36 nf KeyTek 'System 2' generator with PN246I module 1 kv / µs, di/dt < 1 A / µs, Ipp = 1 A 26 µh 25 Ω 47 Ω 46 µh U 6 µf 12 Ω KeyTek 'System 2' generator with PN246I module 5/8

6 SMP1LC-xxx TEST CIRCUIT 2 FOR I BO and V BO parameters : K ton = 2ms R1 = 14Ω R2 = 24Ω 22V 5Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE : Pulse test duration (tp = 2ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. V OUT Selection - Device with V BO < 2 Volt -V OUT = 25 V RMS,R 1 = 14 Ω. - Device with V BO 2 Volt -V OUT = 48 V RMS,R 2 = 24 Ω. TEST CIRCUIT 3 FOR I H PARAMETER R Surge generator V BAT = - 48 V D.U.T This is a GO-NO GO test which allows to confirm the holding current (I H ) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the I H value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : I pp = 1A, 1/1 µs. - The D.U.T. will come back to the off-state within 5 ms max. 6/8

7 SMP1LC-xxx PACKAGE MECHANICAL DATA SMB (Plastic) E1 DIMENSIONS C E L D A1 A2 b REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L FOOT PRINT in millimeters (inches) 2.3 (.9) (.59) (.18) 1.52 (.59) 7/8

8 SMP1LC-xxx ORDER CODE SMP 1 LC - xxx Trisil Surface Mount I PP Low Capacitance = 1 A Voltage Ordering type Marking Package Weight Base qty Delivery mode SMP1LC-8 PL8 SMP1LC-25 L25 SMP1LC-35 L35 SMP1LC-65 L6 SMP1LC-9 L9 SMP1LC-12 L12 SMB.11g 25 Tape & Reel SMP1LC-14 L14 SMP1LC-16 L16 SMP1LC-2 L2 SMP1LC-23 L23 SMP1LC-27 L27 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 22 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 8/8