ESDA25B1 TRANSIL ARRAY FOR ESD PROTECTION. Application Specific Discretes A.S.D. I/O 6 I/O 1 I/O 2 I/O 5
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1 Application Specific Discretes A.S.D. ESDA25B TRANSIL ARRAY FOR ESD PROTECTION APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : - COMPUTER - PRINTERS - COMMUNICATION SYSTEMS It is particulary recommended for RS232 I/O port protection where the line interface withstands only 2 kv ESD surges. FEATURES 6 BIDIRECTIONAL TRANSIL FUNCTIONS VERY LOW CAPACITANCE : C= 20 VRM 50 W peak pulse power (8/20 µs) DESCRIPTION The ESDA25B is a monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against EDS. SO-8 FUNCTIONAL DIAGRAM BENEFITS High ESD protection level : up to 25 kv High integration Suitable for high density boards COMPLIES WITH THE FOLLOWING STANDARDS : IEC : level 4 I/O I/O 2 I/O I/O 6 I/O 5 I/O 4 GND 4 5 GND MIL STD 883C-Method : class 3 (human body model) October Ed : 2 /5
2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol Parameter Value Unit VPP Electrostatic discharge MIL STD 883C - Method kv PPP Peak pulse power (8/20µs) 50 W Tstg Tj Storage temperature range Maximum junction temperature - 55 to C C TL Maximum lead temperature for soldering during s 260 C ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Symbol VRM VBR VCL IRM IPP αt C Rd Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance Types IR VRM Rd αt C min. max. max. typ. max. typ. note note note 2 note 3 0V bias V V ma µa V Ω -4 / C pf ESDA25B note : Between any I/O pin and Groung note 2 : Square pulse, Ipp = 25A, tp=2.5µs. note 3 : V BR = αt* (Tamb -25 C) * V BR (25 C) 2/5
3 CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE The ESDA family has been designed to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage VCL. This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with the following formula: VCL = VBR + Rd IPP As the value of the dynamic resistance remains stable for a surge duration lower than 20µs, the 2.5µs rectangular surge is well adapted. In addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of Rd. Where Ipp is the peak current through the ESDA cell. DYNAMIC RESISTANCE MEASUREMENT The short duration of the ESD has led us to prefer a more adapted test wave, as below defined, to the classical 8/20µs and /00µs surges. I Ipp 2µs t tp = 2.5µs 2.5µs duration measurement wave. 3/5
4 Fig. : Peak power dissipation versus initial junction temperature. Ppp[Tj initial]/ppp[tj initial=25 C] Tj initial( C) Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 C) Ppp(W) tp(µs) 0 Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 C). Rectangular waveform tp = 2.5 µs. Fig. 4 : Capacitance versus reverse applied voltage (typical values) Ipp(A) 20 C(pF).0 tp=2.5µs F=MHz Vosc=30mV 5.0 V CL(V) V R(V) Fig. 5 : Relative variation of leakage current versus junction temperature (typical values) I R[Tj] / I R[Tj=25 C] Tj( C) /5
5 ORDER CODE ESDA25B ESD ARRAY ESDA 25 B RL PACKAGING: RL = Tape and reel = Tube VBR min PACKAGE : SO-8 Bidirectionel MARKING : Logo, Date Code, E25B PACKAGE MECHANICAL DATA SO-8 Plastic DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a a b b C c 45 (typ) D E e e F L M S 8 (max) Packaging : Preferred packaging is tape and reel. Weight : 0.08g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 5/5
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Features ESD Protection for Line with Bi-directional. Provide ESD protection for the protected line to IEC 6000-4- (ESD) ±0kV (air), ±kv (contact) IEC 6000-4-4 (EFT) 40A (5/50ns) IEC 6000-4-5 (Lightning)
CitrusCom CS0801S. Applications. Features. Mechanical Characteristics. Description. Circuit Diagram. Pin Configuration
Features Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±15kV (Air) ±8kV (Contact) IEC 61000-4-4 (EFT) 40A (5/50 ns) Cable Discharge Event (CDE) Package optimized for high-speed lines
PESDLC363T5VU ESD Protector
ESD Protector Description The protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional
ESD Protection Diode in LLP1006-2L
VESD5A1B-HD1 ESD Protection Diode in LLP16-2L 2855 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 2 1 21121 2856 DESIGN SUPPORT TOOLS click logo to get started
ESDA8P80-1U1M. High power transient voltage suppressor. Description. Features. Applications
High power transient voltage suppressor Description Datasheet - production data The ESDA8P80-1U1M is a unidirectional single line TVS diode designed to protect the power line against EOS and ESD transients.
ESD Protection Diode in LLP1006-2L
VESD3A1C-HD1 ESD Protection Diode in LLP16-2L 2 1 2856 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS Models Available 21121 click logo
UMD05B-323 UNITED MICRO DEVICE INC. Small Surface Mount Device TVS. Description. SOD-323 Pin Configuration. Mechanical Characteristics.
SOD-323 Single Line Diode for ESD Protection Description diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They offer
JIEJIE MICROELECTRONICS CO., Ltd
JIEJIE MICROELECTRONICS CO., Ltd 20KP Series 20KW Transient Voltage Suppressor Rev.2.3 DESCRIPTION: The 20KP series of high current uni/bi-directional transient suppressors are designed for A.C. line protection
IEC (EFT) 40A
Features ESD Protect for high-speed I/O channels Provide ESD protection for each channel to IEC 61000-4- (ESD) ±1kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (/0ns) IEC 61000-4- (Lightning) 1A (8/0µs)
PESD3V3L1UA; PESD3V3L1UB; PESD3V3L1UL
PESD3V3L1UA; PESD3V3L1UB; PESD3V3L1UL Rev. 01 17 June 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in
0534S PESDR0534S2. 4-Line Low Capacitance TVS Diode Array. Mechanical Characteristics. Description. Applications. Features. Marking Information
4-Line Low Capacitance TVS Diode Array Description The is a low capacitance TVS arrays, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making
SP pF 8kV DFN Plastic Unidirectional Discrete TVS
SP1053 8.5pF 8kV 01005 DFN Plastic Unidirectional Discrete TVS RoHS Pb GREEN Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide