BDE2S5.0 BDE2S5.0. ESD Protection Diodes. In Ultra Small DFN1006-2L Package. Package Type DFN1006-2L
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1 BYD Microelectronics Co., Ltd. ESD Protection Diodes In Ultra Small DFN1006-2L Package The Series is designed to protect voltage sensitive components from damage due to ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD for board level. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. Specification Features: Small Body Outline Dimensions: x (1.0 mm x 0.60 mm) Low Body Height: (0.5 mm) Stand off Voltage: 5V Low Leakage Response Time is Typically < 1 ns IEC Level 4 ESD Protection These are Pb Free Devices Package Type DFN1006-2L 1 2 PIN: 1 cathode 2 anode 1 5X 2 Ordering Information Device Package Shipping DFN1006-2L 5000/Tape & Reel Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V 0 LEAD FINISH: NiPdAu MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260 C Device Meets MSL 1 Requirements RoHS/WEEE Compliant Marking: Marking code, cathode band Applications Cellular Handsets & Accessories Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Datasheet TS-DIO-PD-0004 Rev. A/2 Page 2 of 6
2 Maximum Ratings Rating Symbol Value Unit IEC (ESD) Contact ±30 kv Total Power Dissipation on FR-5 1 TA = 25 C P D 150 mw Junction and Storage Temperature Range T J, T stg -55 to +150 C Lead Solder Temperature Maximum (10 Second Duration) T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Note1: FR-5 =1.0*0.75*0.062inch (25.4*19.05*1.58mm). Electrical Characteristics ( T A = 25 C unless otherwise noted, V F = 0.9 V I F = 10 ma for all types. ) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I T Test Current V BR Breakdown I T I F Forward Current V F Forward I F P PK Peak Power Dissipation C Max. V R = 0 and freq.=1 MHz Device Mark V RWM (V) I R (µa)@v RWM V BR (V)@ I T I T Typ. Max. Min. Typ. Max. (ma) Max. V C I PP 2=1A C (pf) 5X Note2: Surge current wave form per figure 3. Datasheet TS-DIO-PD-0004 Rev.A/2 Page 3 of 6
3 TYPICAL CHARACTERISTICS Temperature ( C) Figure 1: Typical Breakdown Voltage versus Temperature LEAKAGE CURRENT IR (na) Temperature ( C) Figure 2: Typical Leakage Current versus Temperature t R Peak Value I 8µs e -t t P Half Value I RSM 20µs Time (µs) Figure 3: 8/20µs Pulse Wave Form Datasheet TS-DIO-PD-0004 Rev.A/2 Page 4 of 6
4 PACKAGE OUTLINE DIMENSIONS DFN1006-2L b1 L2 D E L1 b TOP VIEW BOTTOM VIEW A SIDE VIEW A2 A1 Symbol Dimensions in mm MIN. NOM. MAX. A A A REF. D E b b L L REF. Datasheet TS-DIO-PD-0004 Rev.A/2 Page 5 of 6
5 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure that BME products are used within specified operating ranges as set forth in the most recent BME products specifications. The BME products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be made at the customer s own risk. Datasheet TS-DIO-PD-0004 Rev.A/2 Page 6 of 6
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Description The is a TVS array designed to protect I/O or data lines from the damaging effects of ESD. it is low capacitance transient voltage suppressors for high speed data interface that designed to
PESDLC723T5VU Low Capacitance ESD Protector
Description The is a TVS array designed to protect I/O or data lines from the damaging effects of ESD. it is low capacitance transient voltage suppressors for high speed data interface that designed to
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USB-OTG BUS-Port ESD Protection for V BUS = 12 V
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TESDC24V Taiwan Semiconductor
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