= 25 C) of Demonstration Amplifier. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain
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1 Rev 5.0 May 2015 CGH40090PP 90 W, RF Power GaN HEMT Cree s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Package Types: PN: CGH40090PP Typical Performance Over 500 MHz GHz (T C = 25 C) of Demonstration Amplifier Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units Small Signal Gain db Gain at P SAT db Saturated Power W Drain Efficiency at P SAT % Input Return Loss db Features Up to 2.5 GHz Operation 16 db Small Signal Gain at 2.0 GHz 100 W Typical P SAT 55 % Efficiency at P SAT 28 V Operation Subject to change without notice. 1
2 Absolute Maximum Ratings (not simultaneous) at 25 C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V DSS 84 Volts 25 C Gate-to-Source Voltage V GS -10, +2 Volts 25 C Storage Temperature T STG -65, +150 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX 28 ma 25 C Maximum Drain Current 1 I DMAX 12 A 25 C Soldering Temperature 2 T S 245 C Screw Torque τ 80 in-oz Thermal Resistance, Junction to Case 3 R θjc 1.45 C/W 85 C Case Operating Temperature 3,4 T C -40, +150 C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at 3 Measured for the CGH40090PP at P DISS = 112W. 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V GS(th) V DC V DS = 10 V, I D = 28.8 ma Gate Quiescent Voltage V GS(Q) -2.7 V DC V DS = 28 V, I D = 1.0 A Saturated Drain Current 2 I DS A V DS = 6.0 V, V GS = 2.0 V Drain-Source Breakdown Voltage V BR 120 V DC V GS = -8 V, I D = 28.8 ma RF Characteristics 3,4 (T C = 25 C, F 0 = 2.0 GHz unless otherwise noted) Small Signal Gain G SS db V DD = 1.0 A Power Output at Saturation 5 P SAT W V DD = 1.0 A Drain Efficiency 6 η % V DD = 1.0 A, P OUT = P SAT Output Mismatch Stress VSWR 10 : 1 Y No damage at all phase angles, V DD = 1.0 A, P OUT = 90 W CW Dynamic Characteristics 7 Input Capacitance C GS 19.0 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Output Capacitance C DS 5.9 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Feedback Capacitance C GD 0.8 pf V DS = 28 V, V gs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40090PP-AMP 4 I DQ of 1.0 A is by biasing each device at 0.5 A. 5 P SAT is defined as: Q1 or Q2 = I G = 14 ma. 6 Drain Efficiency = P OUT / P DC 7 Capacitance values are for each side of the device. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGH40090PP Rev 5.0
3 Typical Performance Gain and Efficiency vs Output Power measured in Broadband Amplifier Circuit CGH40090PP-AMP V DD = 1.0 A, Freq = GHz 0.5 GHz Gain 1.0 GHz Gain 1.5 GHz Gain 2.0 GHz Gain 2.5 GHz Gain 0.5 GHz DE 1.0 GHz DE 1.5 GHz DE 2.0 GHz DE 2.5 GHz DE Gain (db) Drain Efficiency (%) Output Power (dbm) 60 Output Power and Drain Efficiency vs Frequency measured in Broadband Amplifier Circuit CGH40090PP-AMP V DD = 1.0 A Output Power (dbm) Output Power (dbm) Drain Efficiency (%) Drain Efficiency (%) Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGH40090PP Rev 5.0
4 Typical Performance 20 Gain and Input Return Loss vs Frequency from 0.5 GHz to 2.5 GHz in Broadband Amplifier Circuit CGH40090PP-AMP V DD = 1.0 A 0 18 S21 S Gain (db) Frequency (GHz) Maximum Available Gain and K Factor of the CGH40090PP Vdd = 28 V, Idq = 1.0 A MAG (db) K Factor Input Return Loss (db) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGH40090PP Rev 5.0
5 Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40090PP V DD = 500 ma (per side) Minimum Noise Figure (db) Noise Resistance (Ohms) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGH40090PP Rev 5.0
6 Simulated Source and Load Impedances D1 Z Source 1 Z Load 1 G1 S G2 Z Source 2 Z Load 2 D2 Frequency (MHz) Z Source (1,2) Z Load (1,2) j j j j j j0.08 Note 1. V DD = 28V, I DQ = 1.0A in the package. Note 2. Optimized for power gain, P SAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40090PP Power Dissipation De-rating Curve Power Dis ssipation (W) Note Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGH40090PP Rev 5.0
7 CGH40090PP-AMP Demonstration Amplifier Circuit Schematic CGH40090PP-AMP Demonstration Amplifier Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGH40090PP Rev 5.0
8 CGH40090PP-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C3, C4, C13, C14 CAP, 0.5 pf, ± 0.05 pf, 0603, ATC 600S 4 C5,C15 CAP, 27 pf, ± 5%, 0603, ATC 600S 2 C6,C16,C25,C35 CAP, 1.2 PF ± 0.10 pf, 0603, ATC 600S 4 C7,C17,C26,C36 CAP, 82 pf, ± 5%, 0603, ATC 600S 4 C8, C18, C27, C37 CAP, CER, 470 pf, 100V, 10%, X7R, C9,C19,C28,C38 CAP, CER, pf, 100V, X7R, C10,C20 CAP, TANTALUM, 10UF, 25V, 10%, SMD 2 C21, C22, C31, C32 CAP, 0.8 pf, ± 0.1 pf, 0603, ATC 600S 4 C23,C24,C33,C34 CAP, 0.9 pf, ± 0.1 pf, 0603, ATC 600S 4 C29,C39 CAP, CER, 0.1UF, 50V, 10%, X7R, C30,C40 CAP, 1.0 UF, 100V, 10%, X7R, C41,C42,C43,C44 CAP, DC BLOCK, MULTI-LAYER, 0805, 2400 pf 4 C45, C46 CAP, 33 UF, 100V, ELECT, FK, SMD 2 R1,R11 RES, 1/16W, 0603, 1%, 2.00K OHMS 2 R5,R15 RES, 1/16W, 0603, 1%, 5.1 OHMS 2 L1,L2,L3,L4 FERRITE, 22 OHM, 0805, BLM21PG220SN1 4 Z1 50 OHM, TERMINATION, 30 WATT, HALF FLNG 1 Z2 50 OHM, TERMINATION, 50 WATT, FLANGE 1 X1,X GHZ 50 TO 25 OHM COUPLER, IPP J1 CONN, HEADER, RT>PLZ.1CEN LK 9POS 1 J3,J4 CONN,N,FEM,W/.500 SMA FLNG 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 Q1 CGH40090PP 1 CGH40090PP-AMP Demonstration Amplifier Circuit Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGH40090PP Rev 5.0
9 Typical Package S-Parameters for CGH40090PP, Single Side (Small Signal, V DS = 500 ma, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S MHz MHz MHz MHz MHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz To download the s-parameters in s2p format, go to the CGH40090PP Product Page and click on the documentation tab. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGH40090PP Rev 5.0
10 Typical Package S-Parameters for CGH40090PP, Single Side (Small Signal, V DS = 1000 ma, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S MHz MHz MHz MHz MHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz To download the s-parameters in s2p format, go to the CGH40090PP Product Page and click on the documentation tab. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 10 CGH40090PP Rev 5.0
11 Product Dimensions CGH40090PP (Package Type ) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 11 CGH40090PP Rev 5.0
12 Product Ordering Information Order Number Description Unit of Measure Image CGH40090PP GaN HEMT Each CGH40090PP-TB Test board without GaN HEMT Each CGH40090PP-AMP Test board with GaN HEMT installed Each Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 12 CGH40090PP Rev 5.0
13 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Sarah Miller Marketing Cree, RF Components Ryan Baker Marketing & Sales Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 13 CGH40090PP Rev 5.0
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