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1 CARSON, CA Millimeter wave Full Band Low Noise Amplifiers Model Number Frequency Band Frequency Range (GHz) Noise Figure (Max, db) Gain (Norminal, db) Gain Flatness (+/ db) Current (ma) max. at 12 V Outline AGP KUK KU, K WT A 1 ALN KA Ka WT A 1 WT A 3 ALN Q Q WT A 1 WT A 11 ALN U U WT A 1 WT A 11 ALN V V WT A 5 WT A 11 ALN E E WT A 5 WT A 11 ALN W W WT A 5 WT A 11 Millimeter wave Full Band Power Amplifiers Model Number Frequency Band Frequency Range (GHz) Power P1dB (Min, dbm) Gain (Norminal, db) Gain Flatness (+/ db) Current (ma) max. at 12 V Outline AGP KUK KU, K WT A 1 WT A 1 AHP KA Ka WT A 3 WT A 2 AHP Q Q WT A 11 WT A 1 AHP U U WT A 11 WT A 5 AHP V V WT A 11 WT A 5 AHP E E WT A 11 WT A 5 AHP W W WT A 11 MMW Full Band Amplifiers_Septmeber 2010 Page 1 of 1
2 AGP KUK Ku K Full band General Purpose Amplifier Super broadband performance with gain choice Cover both Ku & K bands and beyond Offering both medium power and low noise Single DC power supply/internal regulated sequential biasing Compact size and light weight Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2 db Power P1: 20 dbm (min) Noise figure: 3.5 db (max) DC bias: 8 12 V/300 ma nominal I/O Connectors: SMA(F) Operating temperature: o C AGP KUK Datasheet _ July 2010 Page 1 of 1
3 ALN KA Ka Full band Low Noise Amplifier Broadband performance across entire Ka band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain: 40 db nominal Gain flatness: +/ 2 db Power P1: 11 dbm (min) Noise figure: 3.0 db (max) DC bias: 8 12 V/250 ma nominal I/O Connectors: K(F) or WR 28 with UG599/U Flange Operating temperature: o C ALN KA Datasheet _ July 2010 Page 1 of 1
4 AHP KA Ka Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire Ka band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2 db Power P1: 20 dbm (min) Noise figure: 6.0 db (max) DC bias: 8 12 V/350 ma nominal I/O Connectors: K(F) or WR 28 with UG599/U Flange Operating temperature: o C AHP KA Datasheet _ July 2010 Page 1 of 1
5 ALN Q Q Full band Low Noise Amplifier Broadband performance across entire Q band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain: 20 db nominal Gain flatness: +/ 1.5 db Noise figure: 4.0 db (typ) DC bias: 8 12 V/100 ma nominal I/O Connectors: 2.4mm(F) or WR 22 with UG383/U Flange Operating temperature: o C ALN Q Datasheet _ July 2010 Page 1 of 1
6 AHP Q Q Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire Q band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain: 25 db nominal Power P1: 20 dbm (min) DC bias: 8 12 V/500 ma nominal I/O Connectors: 2.4mm(F) or WR 22 with UG383/U Flange Operating temperature: o C AHP Q Datasheet _ July 2010 Page 1 of 1
7 ALN U U Full band Low Noise Amplifier Broadband performance across entire U band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2.5 db Noise figure: 6.0 db (max), 7.0 db (typ) in GHz DC bias: 8 12 V/170 ma nominal I/O Connectors: V(F) or WR 19 with UG383/U M Flange Operating temperature: o C ALN U Datasheet _ July 2010 Page 1 of 1
8 AHP U U Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire U band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Power P1: 13 dbm (typ) DC bias: 8 12 V/200 ma nominal I/O Connectors: V(F) or WR 19 with UG383/U M Flange Operating temperature: o C AHP U Datasheet _ July 2010 Page 1 of 1
9 ALN V V Full band Low Noise Amplifier Broadband performance across entire V band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2.0 db Noise figure: 6.0 db (max) DC bias: 8 12 V/150 ma nominal I/O Connectors: WR 15 with UG385/U Flange Operating temperature: o C ALN V Datasheet _ July 2010 Page 1 of 1
10 AHP V V Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire V band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2.0 db Power P1: 16 dbm (typ) DC bias: 8 12 V/200 ma nominal I/O Connectors: WR 15 with UG385/U Flange Operating temperature: o C AHP V Datasheet _ July 2010 Page 1 of 1
11 ALN E E Full band Low Noise Amplifier Broadband performance across entire E band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 2.0 db Noise figure: 4.0 db (max) DC bias: 8 12 V/80 ma nominal I/O Connectors: WR 12 with UG387/U Flange Operating temperature: o C ALN E Datasheet _ July 2010 Page 1 of 1
12 AHP E E Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire E band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain: 20 db nominal Power P1: 15 dbm (typ) DC bias: 8 12 V/250 ma nominal I/O Connectors: WR 12 with UG387/U Flange Operating temperature: o C AHP E Datasheet _ July 2010 Page 1 of 1
13 ALN W W Full band Low Noise Amplifier Broadband performance across entire W band Ultra low noise with gain choice Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain flatness: +/ 1.5 db Noise figure: 4.0 db (typ) DC bias: 8 12 V/80 ma nominal I/O Connectors: WR 10 with UG387/U M Flange Operating temperature: o C ALN W Datasheet _ July 2010 Page 1 of 1
14 AHP W W Full band Power Amplifier Super broadband performance with gain choice Offering high power across the entire W band Single DC power supply/internal regulated sequential biasing Compact size and light weight Variable I/O interface options Telecommunication Test instrumentation Transceiver sub assemblies Frequency: GHz Gain: 20 db nominal Power P1: 12 dbm (typ) DC bias: 8 12 V/250 ma nominal I/O Connectors: WR 10 with UG387/U M Flange Operating temperature: o C AHP W Datasheet _ July 2010 Page 1 of 1
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