Product Datasheet Revision: April 2014

Transcription

1 ALP8 8 GHz Product Datasheet Revision: April 1 Applications W-Band Imaging Sensors Radar X =.mm Y =.8mm Product Features RF frequency: 8 GHz Broadband Operation Linear gain: 9 db, typical Noise Figure: db, typical P1dB : 3 dbm * Microstrip Topology MMIC, In-line Input & Output.1 um InP HEMT Process 3 mil substrate DC Power: < 3 mw Die Size 1.7 sq. mm Performance Characteristics (Ta = C) Specification Min Typ Max Unit Frequency 8 1 GHz Linear Gain 9 db Input Return Loss 1 db Output Return Loss 1 db Noise Figure 3. db Noise Figure (Ave.).6 3 db P1dB * 3 dbm Vd 1.3 V Vg1=Vg -.1 V Id1. ma Short Haul / High Capacity Links W-Band Communication Links Product Description The ALP8 W-band InP HEMT Low Noise Amplifier is a -Stage, broadband, ultra low noise amplifier MMIC. It can be used in applications such as W-band Imaging, Radar, commercial digital microwave radios and wireless LANs. The small die size allows for extremely compact packaging. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques. Absolute Maximum Ratings (Ta = C) Parameter Min Max Unit Vd1 1.3 V Vg1, vg. V Id. ma Input Drive Level * dbm Assy. Temperature 1 deg. C * Estimated 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page 1

2 Input Return Loss (db) Output Return Loss (db) Gain (db) NF (db) ALP8 8 GHz Product Datasheet Revision: April 1 Measured Performance Characteristics (Typical Performance at C) Vd = 1.3 V, Id =. ma* - Wideband Performance Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * On-Wafer, Vg1=Vg 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page

3 Input Return Loss (db) Output Return Loss (db) Gain (db) NF (db) ALP8 8 GHz Product Datasheet Revision: April 1 Measured Performance Characteristics (Typical Performance at C) Vd = 1.3 V, Id =. ma* - Performance from 9 GHz to 1 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * On-Wafer, Vg1=Vg 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page 3

4 Input Return Loss (db) Output Return Loss (db) Gain (db) NF (db) ALP8 8 GHz Product Datasheet Revision: April 1 Measured Performance Characteristics (Typical Performance at C) Vd = 1.3 V, Id =. ma** - Wideband Performance Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * On-Wafer, Vg1 & Vg biased Independently 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page

5 Input Return Loss (db) Output Return Loss (db) Gain (db) NF (db) ALP8 8 GHz Product Datasheet Revision: April 1 Measured Performance Characteristics (Typical Performance at C) Vd = 1.3 V, Id =. ma** - Performance from 9 GHz to 1 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency * On-Wafer, Vg1 & Vg biased Independently 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page

6 ALP8 8 GHz Product Datasheet Revision: April 1 Die Size and Bond Pad Locations (Not to Scale) 77 µm 97 µm 117 µm VG1 VD VG 8µm RFIN X = µm Y = 8 µm DC Bond Pad = 1 x 1. µm RF Bond Pad = x. µm Chip Thickness = 7 µm RFOUT 8µm 8 µm µm Recommended Assembly Notes 1. Bypass caps should be 1 pf (approximately) ceramic (single-layer) placed no farther than 3 mils from the amplifier.. Best performance obtained from use of < 6 mil (long) by 1. by. mil ribbons on input and output. 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page 6

7 ALP8 8 GHz Product Datasheet Revision: April 1 Suggested Bonding Arrangement Vd =.1uF = 1 pf Vg = 1 Ohms (Series) VG1 VD VG RF Input RFIN X = µm Y = 8 µm DC Bond Pad = 1 x 1. µm RF Bond Pad = x. µm Chip Thickness = 7 µm RFOUT RF Output Substrate Substrate Biasing/De-Biasing Details: Bias up sequence: Pinch-off the device by setting Vg1 = Vg= -.6 and Vd = V Increase Vd to the desired value Adjust Vg1=Vg to realize the desired Id (Nominal Current for Id for Vg1 = Vg biased on is. ma) Bias down sequence: Reduce Vg1=Vg down to -.6V Lower Vd to V Lower Vg1=Vg to V 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page 7 Approved for Public Release: Northrop Grumman Case 1-xxxx, xx/xx/1

8 ALP8 8 GHz Product Datasheet Revision: April 1 Suggested Bonding Arrangement (Alternate Bias) Vd Vg =.1uF = 1 pf Vg1 = 1 Ohms (Series) VG1 VD VG RF Input RFIN X = µm Y = 8 µm DC Bond Pad = 1 x 1. µm RF Bond Pad = x. µm Chip Thickness = 7 µm RFOUT RF Output Substrate Substrate Biasing/De-Biasing Details: Bias up sequence: Pinch-off the device by setting Vg1 = Vg= -.6 and Vd = V Increase Vd to the desired value Adjust Vg1 to realize the desired Id (Nominal Current for Id for Vg1 biased on is 13. ma) Adjust Vg to realize the desired Id (Nominal Current for Id for both Vg1 and Vg biased on is. ma) Bias down sequence: Reduce Vg down to -.6V Reduce Vg1 down to -.6V Lower Vd to V Lower Vg1 and Vg to V 1 Northrop Grumman Systems Corporation Phone: (31) 81 Fax: (31) as-mps.sales@ngc.com Page 8 Approved for Public Release: Northrop Grumman Case 1, /3/1