ESD5B5CL Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection The ESD5B5CL is designed with Leiditech Punch-Through process TVS technology to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. Also because of its low capacitance, it is suited for use in high frequency designs such as USB 2. high speed, VGA, DVI, SDI and other high speed line applications. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD(electrostatic discharge), and EFT (electrical fast transients). Features Peak Power Dissipation 8 W (8 x 2 us Waveform) Stand-off Voltage: 5. V Replacement for MLV (63) Protects I/O Port Low Clamping Voltage Low Leakage Low Capacitance Low Body Height: 1.68mg Response Time is < 1 ns Meets MSL 1 Requirements ROHS compliant Solid-state Punch-Through TVS Process technology WeiPan technology SOD-523 Main applications High Speed Line :USB1./2., VGA, DVI, SDI, Serial and Parallel Ports Notebooks, Desktops, Servers Projection TV Cellular handsets and accessories Portable instrumentation Peripherals Protection solution to meet IEC61-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC61-4-4 (EFT) 4A (5/5ns) Ordering Information Device Qty per Reel Reel Size ESD5B5CL 3 7 Inch
Maximum ratings (Tamb=25 Unless Otherwise Specified) Parameter Symbol Value Unit Peak Pulse Power (tp=8/2μs waveform) PPPP 8 Watts ESD Rating per IEC61-4-2: Contact 8 Air 15 KV Lead Soldering Temperature TL 26 (1 sec.) Operating Temperature Range TJ -55 ~ 15 Storage Temperature Range TSTG -55 ~ 15 Lead Solder Temperature Maximum (1 Second Duration) TL 26 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected. *Other voltages may be available upon request. 1. Nonrepetitive current pulse, per Figure 1. Electrical characteristics ( Tamb=25 Unless Otherwise Specified) V PT @ 1 ma V SB @ 5 ma V C Capacitance Device V RWM I R @ V RWM (Volts) (Volts) @ 1 A @ V R = V, 1 MHz (pf) (V) (ua) Min Min (V) Typ Max ESD5B5CL 5. 2 6. 5.3 9. 4.5 6 Junction capacitance is measured in VR=V,F=1MHz I Symbol VRWM VPT Parameter Working Peak Reverse Voltage Punch-Through Voltage@ I PT VF VSB V C I T Snap-Back Voltage@ I SB Clamping Voltage @ IPP Test Current VC VSB VPT VRWM IR IPT IF V IRM Leakage current at VRWM ISB IPP Peak pulse current C O Off-state Capacitance IPP C J Junction Capacitance
Typical electrical characterist applications PP 11 1 9 8 7 6 5 4 3 2 1 td=ipp/2 Waveform Parameters: tr=8us td=2us 5 1 15 2 25 3 Peak Pulse Power-PPK(KW) 1 1.1.1.1 1 1 1 1 Time (us) Pulse Duration-tp(us) Pulse Waveform Non-Repetitive Peak Pulse Power vs. Pulse Time % of Rated Power or Ipp 11 1 9 8 7 6 5 4 3 2 1 25 5 75 1 125 15 Cj(VR)/Cj(VR=V) 2 1.8 1.6 1.4 1.2 1..8.6.4.2-25 -2-15 -1-5 5 Voltage-VR(v) Ambient Temperature-TA Power Derating Curve Junction Capacitance vs. Reverse Voltage Insertion Loss (db) -6-12 -18-24 -3-36 -42 1 1 1 3 MHZ MHZ GHZ GHZ Insertion Loss S21
Typical applications USB Connector VCC D+ D_ GND ESD5B5CL USB CONTROLLER USB Protection For ESD I/O 1 I/O 2 I/O 3 I/O 4 Protected IC WPESD5B5CL I/O Line Protection
Package information SOD-523 A B D C J K S Recommended Pad outline.4mm 1.4mm.4mm Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.1 1.3.43.51 B.7.9.45.53 C.5.7.31.43 D.25.35.4.12 J.7.2.28.79 K.15.25.6.1 S 1.5 1.7.59.67 SHANGHAI LEIDITECH ELECTRONICS TECHNOLOGY CO., LTD Phone: +86-21-582721 Email:sale1@leiditech.com http://www.leiditech.com