RT mΩ Power Distribution Switches. General Description. Features. Pin Configurations. Applications. Ordering Information

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Nickolas Harrington
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1 100mΩ Power Distribution Switches General Description he is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus (USB) applications. A built-in charge pump is used to drive the N-channel NMOSFE that is free of parasitic body diode to eliminate any reversed current flow across the switch when it is powered off. Its low quiescent supply current (23µA) and small package (SO-25) is particularly suitable in battery-powered portable equipment. Several protection functions include soft start to limit inrush current during plug-in, current limiting at 1.5A to meet USB power requirement, and thermal shutdown to protect damage under over current conditions. Applications Battery-Powered Equipment Motherboard USB Power Switch USB Device Power Switch Hot-Plug Power Supplies Battery-Charger Circuits Ordering Information - Package type BL : SO-25, w/o CE B : SO-25, with CE X : SO-89 Operating temperature range C: Commercial standard Marking Infromation Features 100mΩ yp. High-Side NMOSFE (SO- 25) Guaranteed 1.1A Continuous Current 1.5A Current Limit Small SO- 25 Package Minimizes Board Space Soft Start hermal Protection Low 23µA Supply Current Wide Input Voltage Range: 2.2V ~ 6V Pin Configurations Part Number -CBL (SO-25) -CB (SO-25) -CX (SO-89) Pin Configurations ypical Application Circuit V IN C IN 1 µf CBL VIN VOU VIN 5 4 OP VIEW 1 GND OP VIEW OP VIEW VOU 1. VOU 2. GND 3. VIN 4. VIN 5. VOU 1. VOU 2. GND 3. VIN 4. CE 5. VOU 1. VIN 2. GND 3. VOU C OU 33 µf V OU Part Number -CBL -CB -CX Marking AH C0 AR DS Dec

2 Pin Description Pin Name VIN VOU GND CE Pin Function Input Pin Output Pin Power Ground Pin Chip Enable Control Pin est Circuit V IN V CE VIN CE GND VOU V OU R L C L Function Block Diagram CE VIN Bias Current Limit RS (VIN) Charge Pump Control (VOU) Oscillator hermal Detection NMOSFE VOU GND DS Dec

3 Absolute Maximum Ratings Supply Voltage V IN 7V Chip Enable V CE -0.3V ~ 7V Power Dissipation SO W SO W Operating Junction emperature Range -20 C ~ 100 C Storage emperature Range -65 C ~ 150 C hermal Resistance SO-25 θ JA 250 C /W SO-89 θ JA 100 C /W V OU EDS Level HBM (Human Body Mode) MM (Machine Mode) Electrical Characteristics (, C IN = C OU = 1µF, a = 25 C, unless otherwise specified) Parameter Symbol est Conditions Min yp Max Units Input Voltage Range V IN V Output NMOFE R DS(ON) 8KV 800V -CBL I L = 1A CB R DS(ON) I L = 1A CX I L = 1A V IN = 3V Supply Current I DD Output urn-on Rising ime R R L = 10Ω, 90% Settling 400 µs Current Limit hreshold I LIMI R L = 2Ω A Short-circuit Output Current I OS V OU = 0V 0.5 A CE Input High hreshold -CB 2.0 V V CE CE Input Low hreshold -CB 0.8 V Shutdown Supply Current -CBL CE = µa I OFF Output Leakage Current -CBL CE = 0, V OU = 0V µa Under Voltage Lockout UVLO V Under Voltage Hysteresis 100 mv hermal Limit 130 C hermal Limit Hysteresis 20 C mω µa DS Dec

4 ypical Operating Charateristics Supply Current vs. emp Supply Current vs. Voltage a = 25 C Quiessent Current ( µ A) Quiescent Current (µ A) emperature (ºC) Voltage (V) On-Resistance vs. emp. CX On-Resistance vs. Voltage a = 25 C CBL On-Resistance (m Ohm) CB CBL On-Resistance (mohm) emperature ( C) Voltage (V) Current Limit vs. emp Current Limit vs. Voltage Current Limit (A) Current Limit (A) a = 25 C emperature ( C) Voltage (V) DS Dec

5 Short Circuit Current (ma) Short Circuit Current vs. emp. Short Circuit Current (ma) Short Circuit Current vs. Voltage a = 25 C 200 emperature ( C) Voltage (V) CE hreshold (V) CE hreshold vs. emp. Rising Falling CE hreshold (V) CE hreshold vs. Voltage Rising Falling emperature (ºC) a = 25 C Voltage (V) urn-on Rising ime ( µs) urn On Rising ime vs. emp. R L = 30Ω C L = 1µF Ceramic emperature ( C) urn-off Falling ime (µ S) urn Off Falling ime vs. emp. R L = 30Ω C L = 1µF Ceramic emperature ( C) DS Dec

6 urn-off Supply Current (µ A) Shutdown Supply Current vs. emp. urn-off Leakage Current (µ A) urn-off Leakage Current vs. emp. 0.0 emperature (ºC) 0.0 emperature (ºC) UVLO hreshold vs. emp. Inrush Current Response UVLO hreshold (V) > C L = 100µF C L = 33µF C L = 1µF emperature ( C) I OU =1A/Div, R L = 1 ohm 100µS/Div urn-on Response urn-off Response R L = 30 ohm, C L = 1µF CH3 : V CE : 5V/Div : V OU : 1V/Div R L = 30 ohm, C L = 1µF 100µS/Div 3 > : V CE : 5V/Div : I OU : 100mA/Div; CH3: V OU : 2V/Div 50µS/Div DS Dec

7 UVLO at Rising UVLO at Falling : V IN : 1V/Div : V OU : 1V/Di V CE = 3V, R L = 30 ohm, C L = 1µF : V IN : 1V/Div : V OU : 1V/Div R L = 30 ohm, C L = 1µF 500µS/Div 10mS/Div Short Circuit Response hermal Shut Down Response CH3 hermal Shut Down : V CE : 5V/Div : I OU : 500mA/Div, C L = 1µF : V CE : 5V/Div CH3: I L 1ohm : 500mA/Div : I : 500mA/Div 250µS/Div 50mS/Div Ramped Load Response Current Limit Response V OU = 5V V OU = 4.6V Loading trigger Current Limit hreshold : I OU : 500mA/Div 1mS/Div, C L = 1µF : I LOAD : 1A/Div, C L = 0.1µF R L = 1 ohm 5µS/Div DS Dec

8 Functional Description he is a high-side single N-channel switch with active-high enable input. Applications Information CX Input and Output V IN VIN VOU V OU VIN (input) is the power supply connection to the circuitry and the drain of the output MOSFE. VOU (output) is the source of the output MOSFE. In a C IN 1 µf GND C OU 33 µf typical circuit, current flows through the switch from VIN to VOU toward the load. Both VOU pins must be short on the board and connected to the load and so do both VIN pins but connected to the power Fig. 1 High Side Power Switch source. hermal Shutdown hermal shutdown shuts off the output MOSFE if the die temperature exceeds 130 C and 20 C of hysteresis forces the switch turning off until the die temperature drops to 110 C. Soft Start In order to eliminate the upstream voltage droop caused by the large inrush current during hot-plug events, the soft-start feature effectively isolates power supplies from such highly capacitive loads. Undervoltage Lockout UVLO prevents the MOSFE switch from turning on until input voltage exceeds 1.8V (typical). If input voltage drops below 1.8V (typical), UVLO shuts off the MOSFE switch. Current Limiting and Short Protection he current limit circuit is designed to protect the system supply, the MOSFE switch and the load from damage caused by excessive currents. he current limit threshold is set internally to allow a minimum of 1.1A through the MOSFE but limits the output current to approximately 1.5A typical. When the output is short to ground, it will limit to a constant current 0.5A until thermal shutdown or short condition removed. V IN C IN 1 µf ON V CE CB VIN VOU CE GND V OU C OU 33 µf OFF Fig. 2 High Side Power Switch with Chip Enable Control Filtering o limit the input voltage drop during hot-plug events, connect a 1µF ceramic capacitor from VIN to GND. However, higher capacitor values will further reduce the voltage drop at the input. Connect a 33µF capacitor from VOU to GND. his capacitor helps to prevent inductive parasitics from pulling VOU negative during turn-off or EMI damage to other components during the hot-detachment. If is implanted in device end application, minimum 1uF capacitor from VOU to GND is recommended and higher capacitor values are also preferred. In choosing these capacitors, special attention must be paid to the Effective Series Resistance, ESR, of the capacitors to minimize the IR drop across the capacitor s ESR. DS Dec

9 Ferrite beads in series with all power and ground lines are recommended to eliminate or significantly reduce EMI. In selecting a ferrite bead, the DC resistance of the wire used must be kept to a minimum to reduce the voltage drop. Reverse current preventing he output MOSFE and driver circuitry are also designed to allow the MOSFE source to be externally forced to a higher voltage than the drain (VOU > VIN 0). o prevent reverse current from such condition, disable the switch (CBL) or connect VIN to a fixed voltage under 1.3V. Layout and hermal Dissipation Place the switch as close to the USB connector as possible. Keep all traces as short as possible to reduce the effect of undesirable parasitic inductance. Place the output capacitor and ferrite beads as close to the USB connector as possible. If ferrite beads are used, use wires with minimum resistance and large solder pads to minimize connection resistance. If the package is with dual VOU or VIN pins, short both the same function pins to reduce the internal turn-on resistance. Under normal operating conditions, the package can dissipate the channel heat away. Wide powerbus planes connected to VIN and VOU and a ground plane in contact with the device will help dissipate additional heat. DS Dec

10 Package Information D D1 C A HE E A1 e e 8 (x2) A b b1 b Symbols Dimensions In Millimeters Dimensions In Inches Min yp Max Min yp Max A A b b C D D HE E e Lead SO-89 Surface Mount DS Dec

11 5 D 4 C B 1 b 3 θ1 A H e θ2 A1 θ3 L Symbols Dimensions In Millimeters Dimensions In Inches Min yp Max Min yp Max A A B C D H L b e θ θ θ Lead SO- 25 Surface Mount Package DS Dec

12 Richek echnology Corp. 6F, No. 35, Hsintai Road, Chupei City Hsinchu, aiwan, R.O.C. el: (8863) Fax: (8863) aipei Office (Marketing) 4F-1, No. 127, Lane 235, Paochiao Road, Hsintien City aipei County, aipei, R.O.C. el: (8862) Fax: (8862) DS Dec

HM9708 HM9708. Battery-Powered Equipment Motherboard USB Power Switch USB Device Power Switch Hot-Plug Power Supplies Battery-Charger Circuits DC+ VIN

HM9708 HM9708. Battery-Powered Equipment Motherboard USB Power Switch USB Device Power Switch Hot-Plug Power Supplies Battery-Charger Circuits DC+ VIN 200mΩ Power Distribution Switches Features 200mΩ Typ. High-Side MOSFET 0.8A Current Limit (V IN =3.0V) Wide Input Voltage Range: 2V ~ 5.5V Soft Start Thermal Protection Small SOT-23-5 Package Minimizes