PMT/UMT(275) Series Power Gaps
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- Tobias Byrd
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1 Power Gaps Features Fast impulse breakdown at 5kV/µs Tight DC breakdown voltage tolerance (±10%) Low capacitance Small size Hermetically sealed design provides maximum integrity under extreme environmental conditions Applications Test equipment Video displays Medical electronics Instrumentation circuits Standard Voltages Series DC Breakdown Voltage (Nom) Unit PMT(275) 350 V 400 V 450 V 500 V UMT(275) 550 V 600 V 650 V 750 V 800 V 850 V 900 V 1.0 kv 1.5 kv 2.0 kv 2.5 kv Devices in the PMT/UMT(275) Series with other breakdown voltages in the V range are available upon request. Description High Energy Devices PMT(275) and UMT(275) Series surge protectors (350500V and V respectively) provide a high level of protection from highspeed, highcurrent transient surges. These devices are constructed using a proprietary semiconductor junction process which results in nanosecond response times combined with peak current ratings in excess of 20kA. Ordering Information A complete part number is represented by the digits below. Breakdown voltages are expressed in Volts for devices <1000V and kv for devices 1kV. For example, UMT(275)800 is an 800V UMT(275) series device with no options, UMT(275)800E1 is an 800V UMT(275) series device in an epoxy molded package with left hand mounting and UMT(275)1.0E2 is a 1kV UMT(275) series device in an epoxy molded package with right hand mounting. Product Series / Part Number Breakdown Voltage Options* PMT(275)XXXX V E1, E2 UMT(275)XXXX V E1, E2 UMT(275)X.XX kV E1, E2 *Options: Blank: No options bare tube only E1: Epoxy molded device with left hand mounting E2: Epoxy molded device with right hand mounting 1 of 5
2 PMT(275)350 PMT(275) V V Ω PMT(275)450 PMT(275) V V Ω UMT(275)550 UMT(275) V V Ω UMT(275)650 UMT(275) V V Ω 2 of 5
3 UMT(275)800 UMT(275) V V Ω UMT(275)900 Parameter Conditions Symbol Min Nom Max Units V 1240 V Ω Capacitance 1MHz C 3.5 pf Surge Life 1kA (PW=20 µs) 500 surges UMT(275)1.0 UMT(275) kv kv Ω UMT(275)2.0 UMT(275) kv kv Ω 3 of 5
4 MECHANICAL DIMENSIONS mm/(inches) Standard Option: E2 EPOXY MOLD ±50.80 (42.000±2.000) BOLT COVER 3.18±0.38 (0.125±0.015) ø13.46±0.13 (ø0.530±0.005) ø12.45±0.13 (ø0.490±0.005) 17.02±0.38 (0.670±0.015) 5.08 (0.200) FERRULE OVERALL FERRULE LENGTH 8.33±0.03 (0.328±0.001) 5.16± (0.203±0.003) ø9.14±0.10 (ø0.360±0.004) 10.16±0.38 (0.400±0.015) 7.92±0.38 (0.312±0.015) ø4.72±0.05 (ø0.186±0.002) PMT/UMT(275) 1 OHM, 3 WATT RESISTOR 7.92±0.38 (0.312±0.015) 8.76±0.38 (0.345±0.015) 26.92±0.38 (1.060±0.015) INSULATED LEAD WIRE 32.51±0.38 (1.280±0.015) 4 of 5
5 Contact Information: High Energy Devices, LLC 26 45DHollenberg Progress Court Parkway Bridgeton, Maryland Heights, MO MO Phone: Fax: HIGH ENERGY DEVICES, LLC MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NEITHER CIRCUIT PATENT LICENSES NOR INDEMNITY ARE EXPRESSED OR IMPLIED. EXCEPT AS SET FORTH IN HIGH ENERGY DEVICES STANDARD TERMS AND CONDITIONS OF SALE, HIGH ENERGY DEVICES, LLC ASSUMES NO LIABILITY WHATSOEVER, AND DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR INFRINGEMENT OF ANY INTELLECTUAL PROPERTY RIGHT. THE PRODUCTS DESCRIBED IN THIS DOCUMENT ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED FOR USE AS COMPONENTS IN SYSTEMS INTENDED FOR SURGICAL IMPLANT INTO THE BODY, OR IN OTHER APPLICATIONS INTENDED TO SUPPORT OR SUSTAIN LIFE, OR WHERE MALFUNCTION OF HIGH ENERGY DEVICES PRODUCT MAY RESULT IN IN DIRECT PHYSICAL HARM, INJURY, OR DEATH TO A PERSON OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. HIGH ENERGY DEVICES, LLC RESERVES THE RIGHT TO DISCONTINUE OR MAKE CHANGES TO ITS PRODUCTS AT ANY TIME WITHOUT NOTICE. Specification: PMT/UMT(275) Series Specification: PMT/UMT(275) Series Copyright Copyright 2002, 2002, High High Energy Energy Devices, Devices, LLC LLC All rights All rights reserved. reserved. Printed Printed USA in USA. March November of 5
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UNITED MICRO DEVICE INC.
Description TVS diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They offer superior electrical characteristics such
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BZD17C SERIES Taiwan Semiconductor
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UMDSR05 UNITED MICRO DEVICE INC. Ultra Low Capacitance Series TVS. Description. SOT-143 Pin Configuration. Features. Mechanical Characteristics
Description Dual-rail clamp diodes are designed to provide ESD protection for high speed data interfaces. They are ideal for protecting systems with high data and clock rates or for circuits requiring
TESDC24V Taiwan Semiconductor
Bi-directional TVS Diode Array FEATURES - Meet IEC61-4-2 (ESD) ±15kV (air), ±8kV (contact) 6 - Meet IEC61-4-4 (EFT) rating. A (5/5ns) 3 - Protects one Bi-directional I/O line 5 - Working Voltage : 24V
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PESD5V0C1USF. in portable electronics, communication, consumer and computing devices.
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