MCH4020. Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

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1 Ordering number : ENA180 MCH400 SANYO Semiconductors DATA SHEET MCH400 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier Features Low-noise use : NF=1.dB typ (f=1ghz). High cut-off frequency : ft=16ghz typ (VCE=V). High gain : S1e =1.dB typ (f=1ghz). Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO V Collector Current IC 10 ma Collector Dissipation PC 400 mw Junction Temperature Tj 10 C Storage Temperature Tstg - to +10 C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=V, IE=0A 1.0 μa Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 μa DC Current Gain hfe VCE=V, IC=0mA Gain-Bandwidth Product ft VCE=V, IC=0mA 1 16 GHz Forward Transfer Gain S1e VCE=V, IC=0mA, f=1ghz 1. db Noise Figure NF VCE=1V, IC=10mA, f=1ghz db Marking : GT Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment AB TI IM TC No. A180-1/9

2 Package Dimensions unit : mm (typ) 00A to 0.0 Type No. Indication 4 1 GT 1 : Collector : Emitter : Base 4 : Emitter Top view : Collector : Emitter : Base 4 : Emitter SANYO : MCPH4 Collector Current, I C -- ma IC -- VCE 1.mA 1.mA 0.9mA 0.6mA 0.mA Collector Current, I C -- ma IC -- VBE V CE =1V V DC Current Gain, h FE IB=0mA Collector-to-Emitter Voltage, V CE -- V IT1901 hfe -- IC Collector Current, I C -- ma IT190 V CE =V 1V Reverse Transfer Capacitance, Cre -- pf Base-to-Emitter Voltage, V BE -- V IT Cre -- VCB f=1mhz Collector-to-Base Voltage, V CB -- V IT1904 No. A180-/9

3 Output Capacitance, Cob -- pf 1.0 Cob -- VCB S1e -- IC f=1mhz V CE =V 0 f=1ghz Forward Transfer Gain, S1e -- db Gain-Bandwidth Product, f T -- GHz Collector-to-Base Voltage, V CB -- V IT190 ft -- IC V CE =V f=1ghz Noise Figure, NF -- db f=1ghz 1 VCE =1V Collector Current, I C -- ma NF -- IC V IT Collector Current, I C -- ma IT PC -- Ta Collector Current, I C -- ma IT Collector Dissipation, P C -- mw Ambient Temperature, Ta -- C IT1909 No. A180-/9

4 SPICE Parameters model: Gummel-Poon Parameter Value Unit Parameter Value Unit IS.1f A TF 6.00p S BF 1 XTF 0.00f NF 1.0 VTF 0.0m V VAF 8 V ITF 0 A IKF 06.4m A PTF 00.0m C ISE 1.84p A CJC 1.0f F NE.8 VJC 00.0f V BR 14 MJC 1.10p NR 1.04 XCJC 1 VAR 4 V TR 0 S IKR 60.0m A FC 00.0m ISC 140.0f A CJS 0.0f F NC 1.6 VJS 10.0m V RB Ω MJS 16.0m IRB 1. A Lfc 110.0p H RBM.00m Ω Lwb 80.0p H RE 40.0m Ω Lfb.0p H RC 1. Ω Lwe 14.0p H XTB 0 Lfe 80.0p H EG 1.11 ev Cbc.0f F XTI 1 Ceb 1.0f F CJE.46p F Cce 10.0f F VJE 0.0m V MJE 10.00m Schematic Cbc Lfb Lwb Lfc Ceb Lwe Cce Lfe IT1901 *Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. No. A180-4/9

5 S Parameters (Common emitter) VCE=1V, IC=10mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S VCE=1V, IC=0mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S No. A180-/9

6 S Parameters (Common emitter) VCE=1V, IC=100mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S VCE=V, IC=10mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S No. A180-6/9

7 S Parameters (Common emitter) VCE=V, IC=0mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S VCE=V, IC=100mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S No. A180-/9

8 S Parameters (Common emitter) VCE=V, IC=10mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S VCE=V, IC=0mA Freq(MHz) S11 S11 S1 S1 S1 S1 S S No. A180-8/9

9 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 008. Specifications and information herein are subject to change without notice. PS No. A180-9/9

MCH3007. RF Transistor 12V, 30mA, ft=8ghz, NPN Single MCPH3. Features. Specifications

MCH3007. RF Transistor 12V, 30mA, ft=8ghz, NPN Single MCPH3. Features. Specifications Ordering number : ENA19A RF Transistor 1V, 0mA, ft=8ghz, NPN Single MCPH http://onsemi.com Features Low-noise use : NF=1.dB typ (f=1ghz) High cut-off frequency : ft=8ghz typ (VCE=V) High gain : S1e =1dB