Maintenance/ Discontinued

Transcription

1 Zener Diodes Silicon planar type For stabilization of power supply Features Extremely low noise voltage caused from the diode (2.4 V to 39V, /3 to /0 of our conventional MAZ3xxx series) Extremely good rising performance (in the low-current range) Easy-to-select the optimum diode because of their finely divided zener-voltage ranks Guaranteed reliability, equivalent to that of conventional products (Mini type package) Allowing to reduce the mounting area, thickness and weight substantially, compared with those of the conventional products Allowing both reflow and flow mode of automatic soldering Allowing automatic mounting by an existing chip mounter Absolute Maximum Ratings T a = 25 C Parameter Symbol Rating Unit Repetitive peak forward current I FRM 200 ma Total power dissipation * P T 50 mw Junction temperature T j 50 C Storage temperature T stg 55 to +50 C Note) *: P T = 50 mw achieved with a printed circuit board. Common Electrical Characteristics T a = 25 C±3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F I F = 0 ma V Zener voltage * V Z Specified value V Zener rise R ZK Specified value Refer to the list of the W Zener R Z Specified value electrical characteristics W Reverse current I R V R Specified value within part numbers ma Temperature coefficient of zener voltage * 2 S Z Specified value mv/ C Note). Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 703 measuring methods for diodes. 2. Absolute frequency of input and output is 5 MHz. 3. The temperature must be controlled 25 C for V Z measurement. V Z value measured at other temperature must be adjusted to V Z (25 C) 4. * : V Z guaranteed 20 ms after current flow. *2 : T j = 25 C to 50 C Package Code SMini2-F3 Pin Name : Anode 2: Cathode Marking symbol Refer to the list of the electrical characteristics within part numbers includes following four Product lifecycle stage. Publication date: May 2009 SKE00032DED

2 Electrical Characteristics within Part Numbers T a = 25 C±3 C Part number Zener voltage V Z Reverse current I R ( ma) Zener R Z (W) Zener rise R ZK (W) Temperature coefficient of zener voltage S Z (mv/ C) Marking symbol V R Min Typ Max Max Max Max Typ MAZ8024G0L MAZ8027G0L MAZ8027GLL _7 MAZ8027GHL ^7 MAZ8030G0L MAZ8030GLL _0 MAZ8030GHL ^0 MAZ8033G0L MAZ8033GLL _3 MAZ8033GHL ^3 MAZ8036G0L MAZ8036GLL _6 MAZ8036GHL ^6 0L LL _9 HL ^9 MAZ8043G0L MAZ8043GLL _ MAZ8043GML MAZ8043GHL ^3 MAZ8047G0L MAZ8047GLL _ MAZ8047GML MAZ8047GHL ^7 MAZ805G0L MAZ805GLL _ MAZ805GML MAZ805GHL ^ MAZ8056G0L MAZ8056GLL _ MAZ8056GML MAZ8056GHL ^6 MAZ8062G0L MAZ8062GLL _ MAZ8062GML MAZ8062GHL ^2 MAZ8068G0L MAZ8068GLL _ MAZ8068GML MAZ8068GHL ^8 2_7 or 2^7 3_0 or 3^0 3_3 or 3^3 3_6 or 3^6 3_9 or 3^9 4_3, 4-3 or 4^3 4_7, 4-7 or 4^7 5_, 5- or 5^ 5_6, 5-6 or 5^6 includes following four Product lifecycle stage. 6_2, 6-2 or 6^2 6_8, 6-8 or 6^8 2 SKE00032DED

3 Electrical Characteristics within Part Numbers (Continued) T a = 25 C±3 C Part number Zener voltage V Z Reverse current I R ( ma) Zener R Z (W) Zener rise R ZK (W) Temperature coefficient of zener voltage S Z (mv/ C) Marking symbol V R Min Typ Max Max Max Max Typ MAZ8075G0L MAZ8075GLL _ MAZ8075GML MAZ8075GHL ^5 MAZ8082G0L MAZ8082GLL _ MAZ8082GML MAZ8082GHL ^2 MAZ809G0L MAZ809GLL _ MAZ809GML MAZ809GHL ^ MAZ800G0L MAZ800GLL _ MAZ800GML MAZ800GHL ^ MAZ80G0L MAZ80GLL _ MAZ80GML MAZ80GHL ^ MAZ820G0L MAZ820GLL _ MAZ820GML MAZ820GHL ^ MAZ830G0L MAZ830GLL _ MAZ830GML MAZ830GHL ^ MAZ840GML MAZ850G0L MAZ850GLL _ MAZ850GML MAZ850GHL ^ MAZ860G0L MAZ860GLL _ MAZ860GML MAZ860GHL ^ MAZ880G0L MAZ880GLL _ MAZ880GML MAZ880GHL ^ 7_5, 7-5 or 7^5 8_2, 8-2 or 8^2 9_, 9- or 9^ 0_, 0- or 0^ _, - or ^ 2_, 2- or 2^ 3_, 3- or 3^ includes following four Product lifecycle stage. 5_, 5- or 5^ 6_, 6- or 6^ 8_, 8- or 8^ SKE00032DED 3

4 Electrical Characteristics within Part Numbers (Continued) T a = 25 C±3 C Part number Zener voltage V Z Reverse current I R ( ma) Zener R Z (W) Zener rise R ZK (W) Temperature coefficient of zener voltage S Z (mv/ C) Marking symbol V R Min Typ Max Max Max Max Typ MAZ8200G0L MAZ8200GLL _ MAZ8200GML MAZ8200GHL ^ MAZ8220G0L MAZ8220GLL _ MAZ8220GML MAZ8220GHL ^ MAZ8240G0L MAZ8240GLL _ MAZ8240GML MAZ8240GHL ^ MAZ8270G0L MAZ8270GLL _ MAZ8270GML MAZ8270GHL ^ MAZ8300G0L MAZ8300GLL _ MAZ8300GML MAZ8300GHL ^ MAZ8330G0L MAZ8330GLL _ MAZ8330GML MAZ8330GHL ^ MAZ8360G0L MAZ8360GLL _ MAZ8360GML MAZ8360GHL ^ MAZ8390G0L MAZ8390GLL _ MAZ8390GML MAZ8390GHL ^ 20_, 20- or 20^ 22_, 22- or 22^ 24_, 24- or 24^ 27_, 27- or 27^ 30_, 30- or 30^ 33_, 33- or 33^ 36_, 36- or 36^ 39_, 39- or 39^ includes following four Product lifecycle stage. 4 SKE00032DED

5 Total power dissipation P T (mw) Zener current Forward current I F Heat sink Copper foil 0.8 mm 0.8 mm Ambient temperature T a ( C) Zener current MAZ8024G MAZ8047G MAZ8043G MAZ805G MAZ8056G Zener voltage V Z V Z V Z R Z MAZ8024G MAZ8027G MAZ8033G MAZ8043G MAZ8047G MAZ805G MAZ8056G MAZ8062G MAZ8068G MAZ8075G MAZ8082G MAZ809G MAZ800G Zener voltage V Z T a = 25 C P T T a V Z V Z I F V F Forward voltage V F Zener current MAZ8062G MAZ8068G MAZ8075G MAZ8082G MAZ809G MAZ800G Characteristics 0 2 T j = 25 C Dynamic Characteristics T j = 25 C Dynamic Characteristics 0 MAZ80G MAZ830G MAZ860G MAZ8200G MAZ8240G MAZ8360G MAZ8390G Zener voltage V Z S Z Zener current Zener R Z (Ω) 0 2 T a = 25 C Static MAZ80G MAZ830G MAZ860G MAZ8200G MAZ8240G MAZ8360G MAZ8390G T a = 25 C Static Characteristics Zener voltage V Z MAZ8024G Temperature coefficient of zener voltage S Z (mv / C) MAZ8240G MAZ860G MAZ800G MAZ8068G MAZ8024G Zener current MAZ8390G Zener current T a = 25 C MAZ860G MAZ8043G MAZ8068G MAZ8082G MAZ800G MAZ8062G MAZ8056G MAZ805G MAZ8047G includes following four Product lifecycle stage. SKE00032DED 5

6 P ZSM t W Z th t W Non-repetitive reverse surge power dissipation P ZSM (W) T a = 25 C P ZSM t W Non repetitive MAZ8075G Pulse width t W (ms) Transient thermal impedance Z th ( C / mw) 0 0 Heat sink Copper foil 0.8 mm 0.8 mm Without heat sink (Typ. value) With head sink (Typ. value) Pulse width t W (s) includes following four Product lifecycle stage. 6 SKE00032DED

7 SMini2-F3 Unit: mm ± ± ± ± to 0.05 includes following four Product lifecycle stage. (0.5).7 ± ± ±0.2 SKE00032DED 7

8 Request for your special attention and precautions in using the technical information and semiconductors described in this book () If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed conditions ( power supply voltage and environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. includes following four Product lifecycle stage.