32Mbit Low Voltage, Dual/Quad-I/O Serial Flash Memory with 100MHz Uniform 4KB Sectors

Transcription

1 32Mbit Low Voltage, Dual/Quad-I/O erial Flash Memory Preliminary with 100MHz Uniform 4KB ectors Document Title 32Mbit, Low Voltage, Dual/Quad-I/O erial Flash Memory with 100 MHz Uniform 4KB ectors Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 16, 2009 Preliminary 0.1 Add packing description in Part Numbering cheme May 5, P36 and P37: ID code error correction eptember 21, P44: hange Data Retention and Endurance value from Max. October 11, 2010 to Min. PRELIMINARY (October, 2010, Version 0.3) AMI Technology orp.

2 Preliminary 32Mbit Low Voltage, Dual/Quad-I/O erial Flash Memory with 100MHz Uniform 4KB ectors FEATURE Family of erial Flash Memories - A25LQ032: 32M-bit /4M-byte Flexible ector Architecture with 4KB sectors - ector Erase (4K-bytes) in 70ms (typical) - Block Erase (64K-bytes) in 0.5s (typical) Page Program (up to 256 Bytes) in 1.5ms (typical) 2.7 to 3.6V ingle upply Voltage Dual input / output instructions resulting in an equivalent clock frequency of 200MHz: - FAT_READ_DUAL_OUTPUT Instruction - FAT_READ_DUAL_INPUT_OUTPUT Instruction - Dual Input Fast Program (DIFP) Instruction Quad input / output instructions resulting in an equivalent clock frequency of 400MHz: - FAT_READ_QUAD_ OUTPUT Instruction - FAT_READ_QUAD_INPUT_OUTPUT Instruction - Quad Input Fast Program (QIFP) Instruction PI Bus ompatible erial Interface 100MHz lock Rate (maximum) Deep Power-down Mode 15µA (Max.) Advanced Protection Features - oftware and Hardware Write-Protect - Top/Bottom, 4KB omplement Array Protection Additional 64-byte user-lockable, one-time programmable (OTP) area 32Mbit Flash memory - Uniform 4-Kbyte ectors - Uniform 64-Kbyte Blocks Electronic ignatures - JEDE tandard Two-Byte ignature A25LQ032: (4016h) - RE Instruction, One-Byte, ignature, for backward compatibility A25LQ032: (15h) Package options - 8-pin OP (209mil), 16-pin OP (300mil), 8-pin DIP (300mil) - All Pb-free (Lead-free) products are RoH compliant GENERAL DERIPTION The A25LQ032 is 32M bit erial Flash Memory, with advanced write protection mechanisms, accessed by a high speed PI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 64 blocks, each containing 16 sectors. Each sector is composed of 16 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 16,384 pages, or 4,194,304 bytes. The whole memory can be erased using the hip Erase instruction, a block at a time, using Block Erase instruction, or a sector at a time, using the ector Erase instruction. Pin onfigurations Figure 1a. OP8, DIP8 onnections Figure 1b. OP16 onnections DO (IO1) W (IO2) V V HOLD (IO3) DI (IO0) HOLD (IO3) V DU DU DU DU DO (IO1) DI (IO0) DU DU DU DU V W (IO2) * DU = Do not use PRELIMINARY (October, 2010, Version 0.3) 1 AMI Technology orp.

3 Pin Descriptions - OP8, DIP8 Pin No. Pin Name I/O Description 1 I hip elect Input 2 DO (IO1) I/O Data Output (Data Input Output 1) (1) 3 W (IO2) I/O Write Protect Input (Data Input Output 2) (2) 4 V Ground 5 DI (IO0) I/O Data Input (Data Input Output 0) (1) 6 I erial lock Input 7 HOLD (IO3) I/O Hold Input (Data Input Output 3) (2) 8 V Power upply Notes: (1) IO0 and IO1 are used for Dual and Quad Instructions (2) IO0 ~ IO3 are used for Quad Instructions Pin Descriptions - OP16 Pin No. Pin Name I/O Description 1 HOLD (IO3) I/O Hold Input (Data Input Output 3) (2) 2 V Power upply 3 DU Don t Use 4 DU Don t Use 5 DU Don t Use 6 DU Don t Use 7 I hip elect Input 8 DO (IO1) I/O Data Output (Data Input Output 1) (1) 9 W (IO2) I/O Write Protect Input (Data Input Output 2) (2) 10 V Ground 11 DU Don t Use 12 DU Don t Use 13 DU Don t Use 14 DU Don t Use 15 DI (IO0) I/O Data Input (Data Input Output 0) (1) 16 I erial lock Input Notes: (1) IO0 and IO1 are used for Dual and Quad Instructions (2) IO0 ~ IO3 are used for Quad Instructions PRELIMINARY (October, 2010, Version 0.3) 2 AMI Technology orp.

4 Block Diagram HOLD (IO3) W (IO2) ontrol Logic High Voltage Generator 64 OTP bytes DI (IO0) DO (IO1) I/O hift Register Address register and ounter 256 Byte Data Buffer tatus Register FFFFF (8M) Y Decoder ize of the memory area 00000h 000FFh 256 Byte (Page ize) X Decoder PRELIMINARY (October, 2010, Version 0.3) 3 AMI Technology orp.

5 PIN DERIPTION hip elect ( ) The PI hip elect ( ) pin enables and disables device operation. When hip elect ( ) is high the device is deselected and the erial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. When hip elect ( ) is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, hip elect ( ) must transition from high to low before a new instruction will be accepted. erial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) The A25LQ032 support standard PI, Dual PI and Quad PI operation. tandard PI instructions use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising edge of the erial lock () input pin. tandard PI also uses the unidirectional DO (output) to read data or status from the device on the falling edge of erial lock (). Dual and Quad PI instruction use the bidirectional IO pins to serially write instructions, addresses or data to the device on the rising edge of erial clock () and read data or status from the device on the falling edge of erial lock (). Quad PI instructions require the non-volatile Quad Enable bit (QE) in tatus Register-2 to be set. When QE=1 the Write Protect ( W ) pin becomes IO2 and Hold ( HOLD ) pin becomes IO3. Write Protect ( W ) The Write Protect ( W ) pin can be used to prevent the tatus Register from being written. Used in conjunction with the tatus Register s Block Protect (MP, E, TB, BP2, BP1 and BP0) bits and tatus Register Protect (RP1, RP0) bits, a portion or the entire memory array can be hardware protected. The Write Protect ( W ) pin is active low. When the QE bit of tatus Register-2 is set for Quad I/O, the Write Protect ( W ) pin (Hardware Write Protect) function is not available since this pin is used for IO2. ee figure 1a and 1b for the pin configuration of Quad I/O operation. Hold (HOLD ) The Hold (HOLD ) pin allows the device to be paused while it is actively selected. When Hold (HOLD ) pin is brought low, while hip elect () pin is low, the DO pin will be at high impedance and signals on the DI and erial lock () pins will be ignored (don t care). When Hold ( HOLD ) pin is brought high, device operation can resume. The Hold function can be useful when multiple devices are sharing the same PI signals. The Hold (HOLD ) pin is active low. When the QE bit of tatus Register-2 is set for Quad I/O. the Hold (HOLD ) pin function is not available since this pin is used for IO3. ee figure 1a and 1b for the pin configuration of Quad I/O operation. erial lock () The PI erial lock Input () pin provides the timing for serial input and output operations. PRELIMINARY (October, 2010, Version 0.3) 4 AMI Technology orp.

6 PI MODE These devices can be driven by a microcontroller with its PI peripheral running in either of the two following modes: POL=0, PHA=0 POL=1, PHA=1 For these two modes, input data is latched in on the rising edge of erial lock (), and output data is available from the falling edge of erial lock (). The difference between the two modes, as shown in Figure 2, is the clock polarity when the bus master is in tand-by mode and not transferring data: remains at 0 for (POL=0, PHA=0) remains at 1 for (POL=1, PHA=1) Figure 2. PI Modes upported POL PHA DI MB DO MB PRELIMINARY (October, 2010, Version 0.3) 5 AMI Technology orp.

7 PI OPERATION tandard PI Instructions The A25LQ032 is accessed through an PI compatible bus consisting of four signals: erial lock (), hip elect (), erial Data Input (DI), and erial Data Output (DO). tandard PI instructions use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of erial lock (). The DO output pin is used to read data or status from the device on the falling edge of erial lock (). Dual PI Instructions The A25LQ032 supports Dual PI operation when using the FAT_READ_DUAL_OUTPUT and FAT_READ_DUAL_ INPUT_OUTPUT (3B and BB hex) instructions. These instructions allow data to be transferred to or from the device at two to three times the rate of ordinary erial Flash devices. The Dual Read instructions are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical code directly from the PI bus (XIP). When using Dual PI instructions the DI and DO pins become bidirectional I/O pins; IO0 and IO1. Quad PI Instructions The A25LQ032 supports Quad PI operation when using the FAT_READ_QUAD_OUTPUT (6B hex) and FAT_READ_QUAD_INPUT_OUTPUT (EB hex) instructions. This instruction allows data to be transferred to or from the device four to six times the rate of ordinary erial Flash. These 2 instructions offer a significant improvement in continuous and random access transfer rates allowing fast code-shadowing to RAM or execution directly from the PI bus (XIP). When using Quad PI instructions the DI and DO pins become bi-directional IO0 and IO1, and the W and HOLD pins become IO2 and IO3 respectively. Quad PI instructions require the non-volatile Quad Enable bit (QE) in tatus Register-2 to be set. Hold ondition The Hold ( HOLD ) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this signal Low does not terminate any Write tatus Register, Program or Erase cycle that is currently in progress. The HOLD function is only available for standard PI and Dual PI operation, not during Quad PI. To enter the Hold condition, the device must be selected, with hip elect ( ) Low. The Hold condition starts on the falling edge of the Hold ( HOLD ) signal, provided that this coincides with erial lock () being Low (as shown in Figure 3.). The Hold condition ends on the rising edge of the Hold ( HOLD ) signal, provided that this coincides with erial lock () being Low. If the falling edge does not coincide with erial lock () being Low, the Hold condition starts after erial lock () next goes Low. imilarly, if the rising edge does not coincide with erial lock () being Low, the Hold condition ends after erial lock () next goes Low. This is shown in Figure 3. During the Hold condition, the erial Data Output (DO) is high impedance, and erial Data Input (DI) and erial lock () are Don t are. Normally, the device is kept selected, with hip elect ( ) driven Low, for the whole duration of the Hold condition. This is to ensure that the state of the internal logic remains unchanged from the moment of entering the Hold condition. If hip elect ( ) goes High while the device is in the Hold condition, this has the effect of resetting the internal logic of the device. To restart communication with the device, it is necessary to drive Hold ( HOLD ) High, and then to drive hip elect ( ) Low. This prevents the device from going back to the Hold condition. Figure 3. Hold ondition Activation HOLD Hold ondition (standard use) Hold ondition (non-standard use) PRELIMINARY (October, 2010, Version 0.3) 6 AMI Technology orp.

8 OPERATING FEATURE Page Programming To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal Program cycle (of duration t PP ). To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. Dual Input Fast Program The Dual Input Fast Program (DIFP) instruction makes it possible to program up to 256 bytes using two input pins at the same time (by changing bits from 1 to 0). For optimized timings, it is recommended to use the Dual Input Fast Program (DIFP) instruction to program all consecutive targeted bytes in a single sequence rather to using several Dual Input Fast Program (DIFP) sequences each containing only a few bytes. Quad Input Fast Program The Quad Input Fast Program (QIFP) instruction makes it possible to program up to 256 bytes using four input pins (IO3, IO2, IO1, and IO0) at the same time (by changing bits from 1 to 0). For optimized timings, it is recommended to use the Quad Input Fast Program (QIFP) instruction to program all consecutive targeted bytes in a single sequence rather to using several Quad Input Fast Program (QIFP) sequences each containing only a few bytes. ector Erase, Block Erase, and hip Erase The Page Program (PP) instruction, Dual Input Fast Program (DIFP) instruction, and Quad Input Fast Program (QIFP) instruction allow bits to be reset from 1 to 0. Before this can be applied, the bytes of memory need to have been erased to all 1s (FFh). This can be achieved, a sector at a time, using the ector Erase (E) instruction, a block at a time, using the Block Erase (BE) instruction, or throughout the entire memory, using the hip Erase (E) instruction. This starts an internal Erase cycle (of duration t E, t BE, or t E ). The Erase instruction must be preceded by a Write Enable (WREN) instruction. Polling During a Write, Program or Erase ycle A further improvement in the time to Write tatus Register (WRR), Program OTP (POTP), Program (PP, DIFP, QIFP), or Erase (E, BE, or E) can be achieved by not waiting for the worst case delay (t W, t PP, t E, t BE, t E ). The Write In Progress (WIP) bit is provided in the tatus Register so that the application program can monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete. Active Power, tand-by Power and Deep Power-Down Modes When hip elect ( ) is Low, the device is enabled, and in the Active Power mode. When hip elect ( ) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles have completed (Program, Erase, Write tatus Register). The device then goes in to the tand-by Power mode. The device consumption drops to I1. The Deep Power-down mode is entered when the specific instruction (the Deep Power-down Mode (DP) instruction) is executed. The device consumption drops further to I2. The device remains in this mode until another specific instruction (the Release from Deep Power-down Mode and Read Electronic ignature (RE) instruction) is executed. All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent Write, Program or Erase instructions. tatus Register The tatus Register contains a number of status and control bits that can be read or set (as appropriate) by specific instructions. ee Read tatus Register (RDR) for a detailed description of the tatus Register bits. Protection Modes The environments where non-volatile memory devices are used can be very noisy. No PI device can operate correctly in the presence of excessive noise. To help combat this, the A25LQ032 boasts the following data protection mechanisms: Power-On Reset and an internal timer (t PUW ) can provide protection against inadvertent changes while the power supply is outside the operating specification. Program, Erase and Write tatus Register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events: - Power-up - Write Disable (WRDI) instruction completion - Write tatus Register (WRR) instruction completion - Program OTP (POTP) instruction completion - Page Program (PP) instruction completion - Dual Input Fast Program (DIFP) instruction completion - Quad input Fast Program (QIFP) instruction completion - ector Erase (E) instruction completion - Block Erase (BE) instruction completion - hip Erase (E) instruction completion The Block Protect (BP2, BP1, BP0) bits conjunction with ector Protect (E) bit, Top/Bottom (TB) bit and omplement Protect (MP) bit allow part of the memory to be configured as read-only. This is the oftware Protected Mode (PM). The Write Protect ( W ) signal allows the Block Protect (BP2, BP1, BP0) bits, ector Protect (E) bit, Top/Bottom (TB) bit, All Protect (APT), omplement Protect (MP) bit and tatus Register Protect (RP1, RP0) bits to be protected. This is the Hardware Protected Mode (HPM). In addition to the low power consumption feature, the Deep Power-down mode offers extra software protection from inadvertent Write, Program and Erase instructions, as all instructions are ignored except one particular instruction (the Release from Deep Power-down instruction). PRELIMINARY (October, 2010, Version 0.3) 7 AMI Technology orp.

9 Table 1-1. Protected Area izes (MP=0) A25LQ032 tatus Register ontent (32M-Bit) Memory Protection E TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion X X None None None None F0000h 3FFFFFh 64KB Upper 1/ E0000h 3FFFFFh 128KB Upper 1/ h 3FFFFFh 256KB Upper 1/ h 3FFFFFh 512KB Upper 1/ h 3FFFFFh 1MB Upper 1/ h 3FFFFFh 2MB Upper 1/ h 00FFFFh 64KB Lower 1/ h 01FFFFh 128KB Lower 1/ h 03FFFFh 256KB Lower 1/ h 07FFFFh 512KB Lower 1/ h 0FFFFFh 1MB Lower 1/ h 1FFFFFh 2MB Lower 1/2 X X h 3FFFFFh 4MB ALL FF000h 3FFFFFh 4KB Top Block FE000h 3FFFFFh 8KB Top Block F000h 3FFFFFh 16KB Top Block X 63 3F8000h 3FFFFFh 32KB Top Block F0000h 3FFFFFh 64KB Top Block h 000FFFh 4KB Bottom Block h 001FFFh 8KB Bottom Block h 003FFFh 16KB Bottom Block X h 007FFFh 32KB Bottom Block h 00FFFFh 64KB Bottom Block Note: 1. X = don t care 2. When MP is 0, the device is ready to accept a hip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits are 0. PRELIMINARY (October, 2010, Version 0.3) 8 AMI Technology orp.

10 Table 1-2. Protected Area izes (MP=1) A25LQ032 tatus Register ontent (32M-Bit) Memory Protection E TB BP2 BP1 BP0 Block(s) Addresses Density(Byte) Portion X X h 3FFFFFh 4MB All h 3EFFFFh 4032KB Lower 63/ h 3DFFFFh 3968KB Lower 31/ h 3BFFFFh 3840KB Lower 15/ h 37FFFFh 3584KB Lower 7/ h 2FFFFFh 3MB Lower 3/ h 1FFFFFh 2MB Lower 1/ h 3FFFFFh 4032KB Upper 63/ h 3FFFFFh 3968KB Upper 31/ h 3FFFFFh 3840KB Upper 15/ h 3FFFFFh 3584KB Upper 7/ h 3FFFFFh 3MB Upper 3/ h 3FFFFFh 2MB Upper 1/2 X X None None None None h 3FEFFFh 4092KB Lower 1023/ h 3FDFFFh 4088KB Lower 511/ h 3FBFFFh 4080KB Lower 255/ X h 3F7FFFh 4064KB Lower 127/ h 3EFFFFh 4032KB Lower 63/ h 3FFFFFh 4092KB Upper 1023/ h 3FFFFFh 4088KB Upper 511/ h 3FFFFFh 4080KB Upper 255/ X h 3FFFFFh 4064KB Upper 127/ h 3FFFFFh 4032KB Upper 63/64 Note: 1. X = don t care 2. When MP is 1, the device is ready to accept a hip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) bits are 1. PRELIMINARY (October, 2010, Version 0.3) 9 AMI Technology orp.

11 MEMORY ORGANIZATION The memory is organized as: 4,194,304 bytes (8 bits each) 64 blocks (64 Kbytes each) 1024 sectors (4 Kbytes each) pages (256 bytes each) 64 bytes OTP located outside the main memory array Table 2. Memory Organization A25LQ032 Address Table Block ector Address range FF000h 3FFFFFh F0000h 3F0FFFh EF000h 3EFFFFh 992 3E0000h 3E0FFFh 463 1F000h 1FFFFh h 10FFFh 447 1BF000h 1BFFFFh 432 1B0000h 1B0FFFh 431 1AF000h 1AFFFFh 416 1A0000h 1A0FFFh F000h 19FFFFh h 190FFFh F000h 18FFFFh h 180FFFh F000h 17FFFFh h 170FFFh F000h 16FFFFh h 160FFFh F000h 15FFFFh h 150FFFh Each page can be individually programmed (bits are programmed from 1 to 0). The device is ector, Block, or hip Erasable (bits are erased from 0 to 1) but not Page Erasable. Block ector Address range F000h 14FFFFh h 140FFFh F000h 13FFFFh h 130FFFh F000h 12FFFFh h 120FFFh F000h 11FFFFh h 110FFFh F000h 10FFFFh h 100FFFh 255 FF000h FFFFFh 240 F0000h F0FFFh 239 EF000h EFFFFh 224 E0000h E0FFFh 223 DF000h DFFFFh 208 D0000h D0FFFh 207 F000h FFFFh h 0FFFh 191 BF000h BFFFFh 176 B0000h B0FFFh 175 AF000h AFFFFh 160 A0000h A0FFFh PRELIMINARY (October, 2010, Version 0.3) 10 AMI Technology orp.

12 Memory Organization (continued) Block ector Address range Block ector Address range F000h 9FFFFh h 90FFFh 143 8F000h 8FFFFh F000h 3FFFFh h 30FFFh 47 2F000h 2FFFFh h 80FFFh 127 7F000h 7FFFFh h 20FFFh 31 1F000h 1FFFFh h 70FFFh 111 6F000h 6FFFFh h 10FFFh 15 0F000h 0FFFFh h 60FFFh 95 5F000h 5FFFFh h 50FFFh 79 4F000h 4FFFFh h 04FFFh h 03FFFh h 02FFFh h 01FFFh h 00FFFh h 40FFFh PRELIMINARY (October, 2010, Version 0.3) 11 AMI Technology orp.

13 INTRUTION All instructions, addresses and data are shifted in and out of the device, most significant bit first. erial Data Input(s) IO0 (IO1, IO2, IO3) is (are) sampled on the first rising edge of erial lock () after hip elect ( ) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on erial Data Input(s) IO0 (IO1, IO2, IO3), each bit being latched on the rising edges of erial lock (). The instruction set is listed in Table 3. Every instruction sequence starts with a one-byte instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by dummy bytes (don t care), or by a combination or none. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher peed (Fast_Read), Read Data Bytes at Higher peed by Dual Output (FAT_READ_DUAL_OUTPUT), Read Data Bytes at Higher peed by Dual Input and Dual Output (FAT_READ_DUAL_INPUT_OUTPUT), Read Data Bytes at Higher peed by Quad Output (FAT_READ_QUAD _OUTPUT), Read Data Bytes at Higher peed by Quad Input and Quad Output (FAT_READ_QUAD_INPUT_OUTPUT), Read OTP (ROTP), Read Identification (RDID), Read Electronic Manufacturer and Device Identification (REM), Read tatus Register (RDR) or Release from Deep Power-down, Read Device Identification and Read Electronic ignature (RE) instruction, the shifted-in instruction sequence is followed by a data-out sequence. hip elect ( ) can be driven High after any bit of the data-out sequence is being shifted out. In the case of a Page Program (PP), Program OTP (POTP), Dual Input Fast Program (DIFP), Quad Input Fast Program (QIFP), ector Erase (E), Block Erase (BE), hip Erase (E), Write tatus Register (WRR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, hip elect ( ) must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is, hip elect ( ) must driven High when the number of clock pulses after hip elect ( ) being driven Low is an exact multiple of eight. All attempts to access the memory array during a Write tatus Register cycle, Program cycle or Erase cycle are ignored, and the internal Write tatus Register cycle, Program cycle or Erase cycle continues unaffected. PRELIMINARY (October, 2010, Version 0.3) 12 AMI Technology orp.

14 Table 3. Instruction et Instruction Description One-byte Instruction ode Address Bytes Dummy Bytes WREN Write Enable h WRDI Write Disable h Data Bytes RDR-1 Read tatus Register h to RDR-2 Read tatus Register h to WRR Write tatus Register h READ Read Data Bytes h to FAT_READ Read Data Bytes at Higher peed Bh to FAT_READ_DUAL _OUTPUT FAT_READ_DUAL _INPUT_OUTPUT FAT_READ_QUAD _OUTPUT FAT_READ_QUAD _INPUT_OUTPUT ROTP POTP Read Data Bytes at Higher peed by (1) Bh to (1) Dual Output Read Data Bytes at Higher peed by Dual Input and Dual Output (1)(2) BBh 3(2) 1 (2) 1 to (1) Read Data Bytes at Higher peed by (4) Bh to (4) Quad Output Read Data Bytes at Higher peed by Quad Input and Quad Output (3)(4) EBh 3(3) 1 (3) 1 to (4) Read OTP (Read 64 bytes of OTP area) Program OTP (Program 64 bytes of OTP area) Bh or 48h to h to 64 PP Page Program h to 256 DIFP Dual Input Fast Program A2h to 256 (5) QIFP Quad Input Fast Program h to 256 (6) E ector Erase h BE Block Erase E hip Erase D8h or 52h 7h or 60h DP Deep Power-down B9h RDID Read Device Identification Fh to REM RE Read Electronic Manufacturer & Device Identification Release from Deep Power-down, and Read Electronic ignature Release from Deep Power-down h 1 (7) 2 1 to ABh to HPM High Performance Mode A3h ontinuous Read Mode Reset (8) Reset Mode Bit M<4> to FFh or FFFFh Note: (1) Dual Output Data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) (2) Dual Input Address IO0 = (A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0) IO1 = (A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3, M1) (3) Quad Input Address IO0 = (A20, A16, A12, A8, A4, A0, M4, M0) IO1 = (A21, A17, A13, A9, A5, A1, M5, M1) IO2 = (A22, A18, A14, A10, A6, A2, M6, M2) IO3 = (A23, A19, A15, A11, A7, A3, M7, M3) PRELIMINARY (October, 2010, Version 0.3) 13 AMI Technology orp.

15 (4) Quad Output Data IO0 = (D4, D0,..) IO1 = (D5, D1,..) IO2 = (D6, D2,..) IO3 = (D7, D3,..) (5) Dual Input Fast Program Input Data IO0 = (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1) (6) Quad Input Fast Program Input Data IO0 = (D4, D0,..) IO1 = (D5, D1,..) IO2 = (D6, D2,..) IO3 = (D7, D3,..) (7) ADD= (00h) will output manufacturer s ID first and ADD=(01h) will output device ID first (8) This instruction is recommended when using the Dual or Quad ontinuous Read Mode features. ee page 22&25 for more information. PRELIMINARY (October, 2010, Version 0.3) 14 AMI Technology orp.

16 Write Enable (WREN) The Write Enable (WREN) instruction (Figure 4.) sets the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Dual Input Fast Program (DIFP), Quad Input Fast Program (QIFP), Program OTP (POTP), ector Erase (E), Block Erase (BE), and hip Erase (E) and Write tatus Register (WRR) instruction. The Write Enable (WREN) instruction is entered by driving hip elect ( ) Low, sending the instruction code, and then driving hip elect () High. Figure 4. Write Enable (WREN) Instruction equence DI Instruction (06h) DO High Impedance Write Disable (WRDI) The Write Disable (WRDI) instruction (Figure 5.) resets the Write Enable Latch (WEL) bit. The Write Disable (WRDI) instruction is entered by driving hip elect ( ) Low, sending the instruction code, and then driving hip The Write Enable Latch (WEL) bit is reset under the following conditions: - Power-up - Write Disable (WRDI) instruction completion - Write tatus Register (WRR) instruction completion - Page Program (PP) instruction completion - Dual Input Fast Program (DIFP) instruction completion - Quad Input Fast Program (QIFP) instruction completion - Program OTP (POTP) instruction completion - ector Erase (E) instruction completion - Block Erase (BE) instruction completion - hip Erase (E) instruction completion Figure 5. Write Disable (WRDI) Instruction equence DI Instruction (04h) DO High Impedance PRELIMINARY (October, 2010, Version 0.3) 15 AMI Technology orp.

17 Read tatus Register (RDR) The Read tatus Register (RDR) instruction allows the tatus Register to be read. The instruction code of 05h is for tatus Register-1 and 35h is for tatus Register-2. The tatus Register may be read at any time, even while a Program, Erase or Write tatus Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the tatus Register continuously, as shown in Figure 6. Table 4-a tatus Register-1 Format tatus Register Protect 0 (Non-volatile) ector Protect (Non-volatile) Top/Bottom Bit (Non-volatile) Block Protect Bits (Non-volatile) Write Enable Latch Bit Write In Progress Bit b7 b6 b5 b4 b3 b2 b1 b0 RWD E TB BP2 BP1 BP0 WEL WIP Table 4-b tatus Register-2 Format Reserved omplement Protect (Non-volatile) Reserved All Protect (Auto Write Protect) Quad Enable (Non-volatile) tatus Register Protect 1 (Non-volatile) b15 b14 b13 b12 b11 b10 b9 b8 0 MP APT QE RP1 The status and control bits of the tatus Register are as follows: WIP bit. The Write In Progress (WIP) bit is a read only bit in the status register (b0) that is set to a 1 state when the device is busy with a Write tatus Register, Program or Erase cycle. During this time the device will ignore further instructions except for the Read tatus Register instruction (see t W, t PP, t E, t BE, and t E in A haracteristics). When the program, erase, or write status register instruction has completed, the WIP bit will be cleared to a 0 state indicating the device is ready for further instructions. WEL bit. The Write Enable Latch (WEL) bit is a read only bit in the status register (b1) that is set to a 1 after executing a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page Program, Dual Input Fast Program, Quad Input Fast Program, ector Erase, Block Erase, hip Erase, and Write tatus Register. BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, and BP0) bits are non-volatile read/write bits in the status register (b4, b3, and b2) that provide Write Protection control and status. Block Protect bits can be set using the Write tatus Register Instruction (see t W in A characteristics). All, none or a portion of the memory array can be protected from Program and Erase instructions (see Table 1. Protected Area izes). These bits can be set with the Write tatus Register Instruction depending on the state of the RP1, RP0, and WEL bit. The factory default setting for the Block Protect Bits is 0 which means none of the array protected. For value of BP2, BP1, BP0 after power-on, see note please. TB bit. The non-volatile Top/Bottom (TB) bit controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 1. Protected Area izes. The factory default setting is TB=0. The TB bit can be set with the Write tatus Register Instruction depending on the state of the RP1, RP0, and WEL bit. E bit. The non-volatile ector Protect (E) bit in the status register (b6) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB ectors (E=1) or 64KB Blocks (E=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Table 1. Protected Area izes. This bit can be set with the Write tatus Register Instruction depending on the state of the RP1, RP0, and WEL bit. The factory default setting for E is 0. RP1, RP0 bits. The tatus Register Protect bits (RP1 and RP0) are non-volatile read/write bits in the status register (b8 and b7). The RP bits control the method of write protection: software protection, hardware protection, or one time programmable protection. QE bit. The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (b9) that allows Quad PI operation. When QE is set to 0(factory default), the W pin and HOLD pin are enabled. When QE is set to 1, the W pin and HOLD pin become IO2 and IO3. This bit can be set with the Write tatus Register Instruction depending on the state of the RP1, RP0, and WEL bit. The factory default setting for QE is 0. APT bit. The All Protect (APT) bit is a non-volatile read/write bit in the status register (b10). Whole chip will be kept in write-protect state after power-on if this bit is set to 1. This bit can be set with the Write tatus Register Instruction depending on the state of the RP1, RP0, and WEL bit. The factory default setting for APT is 0. MP bit. The omplement Protect (MP) bit is a non-volatile read/write bit in the status register (b14). It s used in conjunction with E, TB, BP2, BP1, BP0 bits to provide more flexibility for the array protection. Once MP is set to 1, previous array protection set by E, TB, BP2, BP1 and BP0 will be reversed. Please refer to table 1 for more details. The factory default setting for MP is 0. PRELIMINARY (October, 2010, Version 0.3) 16 AMI Technology orp.

18 Note: 1. When APT is 0, BP2, BP1, BP0 won t be changed after power-on. 2. When APT is 1 and MP is 0, all BP2, BP1, BP0 will be set to 1 after power-on. 3. When APT is 1 and MP is 1, all BP2, BP1, BP0 will be set to 0 after power-on. Figure 6. Read tatus Register (RDR) Instruction equence and Data-Out equence DI Instruction (05h or 35h) DO High Impedance tatus Register 1 or 2 Out tatus Register 1 or 2 Out MB MB PRELIMINARY (October, 2010, Version 0.3) 17 AMI Technology orp.

19 Write tatus Register (WRR) The Write tatus Register (WRR) instruction allows new values to be written to the tatus Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write tatus Register (WRR) instruction is entered by driving hip elect ( ) Low, followed by the instruction code and the data byte on erial Data Input (DI). The instruction sequence is shown in Figure 7. Only non-volatile tatus Register bits RP0, E, TB, BP2, BP1, BP0 (bits 7, 6, 5, 4, 3, 2 of tatus Register-1) and MP, APT, QE, RP1 (bits 14, 10, 9 and 8 of tatus Register-2) can be written. All other tatus Register bits are always read as 0 and will not be affected by the Write tatus Register instruction. hip elect ( ) must be driven High after the eighth or sixteenth bit of the data byte has been latched in. If not, the Write tatus Register (WRR) instruction is not executed. If hip elect () is driven high after the eighth clock the MP, QE and RP1 bits will be cleared to 0. As soon as hip elect ( ) is driven High, the self-timed Write tatus Register cycle (whose duration is t W ) is initiated. While the Write tatus Register cycle is in progress, the tatus Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write tatus Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. The Write tatus Register (WRR) instruction allows the user to change the values of the Block Protect (APT, MP, E, TB, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table 1. The Write tatus Register (WRR) instruction also allows the user to set the tatus Register Protect (RP1, RP0) bits. Those bits are used in conjunction with the Write Protect ( W ) pin to disable writes to the tatus Register. Factory default for all tatus Register bits are 0. Figure 7. Write tatus Register (WRR) Instruction equence Instruction (01h) tatus Register In DI 7 MB DO High Impedance Table 5. Protection Modes RP1 RP0 W tatus Register Description 0 0 X oftware Protection Hardware Protection oftware Protection 1 1 X One Time Program tatus Register is Writable (if the WREN instruction has set the WEL bit). The values in the MP, APT, RP1, RP0, E, TB, BP2, BP1, BP0 bits can be changed. tatus Register is hardware write protected. The values in the MP, APT, RP1, RP0, E, TB, BP2, BP1, BP0 bits cannot be changed. When W pin is high. tatus Register is Writable (if the WREN instruction has set the WEL bit). The values in the MP, APT, RP1, RP0, E, TB, BP2, BP1, BP0 bits can be changed. tatus Register is permanently protected. The values in the MP, APT, RP1, RP0, E, TB, BP2, BP1, BP0 bits cannot be changed. PRELIMINARY (October, 2010, Version 0.3) 18 AMI Technology orp.

20 Read Data Bytes (READ) The device is first selected by driving hip elect ( ) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of erial lock (). Then the memory contents, at that address, is shifted out on erial Data Output (DO), each bit being shifted out, at a maximum frequency f R, during the falling edge of erial lock (). The instruction sequence is shown in Figure 8. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the highest address is reached, the address counter rolls over to h, allowing the read sequence to be continued indefinitely. The Read Data Bytes (READ) instruction is terminated by driving hip elect ( ) High. hip elect ( ) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 8. Read Data Bytes (READ) Instruction equence and Data-Out equence Instruction (03h) Bit Address DI DO High Impedance MB Data Out 1 Data Out MB Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 19 AMI Technology orp.

21 Read Data Bytes at Higher peed (FAT_READ) The device is first selected by driving hip elect ( ) Low. The instruction code for the Read Data Bytes at Higher peed (FAT_READ) instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of erial lock (). Then the memory contents, at that address, is shifted out on erial Data Output (DO), each bit being shifted out, at a maximum frequency f, during the falling edge of erial lock (). The instruction sequence is shown in Figure 9. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher peed (FAT_READ) instruction. When the highest address is reached, the address counter rolls over to h, allowing the read sequence to be continued indefinitely. The Read Data Bytes at Higher peed (FAT_READ) instruction is terminated by driving hip elect ( ) High. hip elect ( ) can be driven High at any time during data output. Any Read Data Bytes at Higher peed (FAT_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 9. Read Data Bytes at Higher peed (FAT_READ) Instruction equence and Data-Out equence DI DO Instruction (0Bh) High Impedance MB 24-Bit Address Dummy Byte DI Data Out 1 Data Out 2 DO MB MB 7 MB Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 20 AMI Technology orp.

22 Read Data Bytes at Higher peed by Dual Output (FAT_READ_DUAL_OUTPUT) The FAT_READ_DUAL_OUTPUT (3Bh) instruction is similar to the FAT_READ (0Bh) instruction except the data is output on two pins, IO0 and IO1, instead of just DO. This allows data to be transferred from the A25LQ032 at twice the rate of standard PI devices. imilar to the FAT_READ instruction, the FAT_READ_DUAL_OUTPUT instruction can operate at the highest possible frequency of f (ee A haracteristics). This is accomplished by adding eight dummy clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device s internal circuits additional time for setting up the initial address. The input data during the dummy clocks is don t care. However, the IO0 and IO1 pins should be high-impedance prior to the falling edge of the first data out clock. Figure 10. FAT_READ_DUAL_OUTPUT Instruction equence and Data-Out equence IO0 IO Instruction (3Bh) High Impedance MB 24-Bit Address Dummy Byte DIO switches from input to output IO IO MB MB Data Out 1 Data Out 2 Data Out 3 Data Out 4 7 MB Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 21 AMI Technology orp.

23 Read Data Bytes at Higher peed by Dual Input and Dual Output (FAT_READ_DUAL_INPUT_OUTPUT) The FAT_READ_DUAL_INPUT_OUTPUT (BBh) instruction is similar to the FAT_READ (0Bh) instruction except the data is input and output on two pins, IO0 and IO1, instead of just DO. This allows data to be transferred from the A25LQ032 at twice the rate of standard PI devices. imilar to the FAT_READ instruction, the FAT_READ_DUAL_INPUT_OUTPUT instruction can operate at the highest possible frequency of f (ee A haracteristics). The FAT_READ_DUAL_INPUT_OUTPUT instruction can further reduce instruction overhead through setting the Mode bits (M7-0) after the input Address bits (A23-0), as shown in Figure 11-a. The upper nibble of the Mode (M7-4) bits controls the length of the next FAT_READ_DUAL_INPUT_OUTPUT instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0) bits are don t care ( x ). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the Mode bits (M5-4) equal 10 hex, then the chip is into ontinuous Read Mode and the next FAT_READ_DUAL_INPUT_OUTPUT instruction (after is raised and then lowered) does not require the BBh instruction code, as shown in figure 11-b. This reduces the instruction sequence by eight clocks and allows the address to be immediately entered after is asserted low. If the Mode bits (M5-4) are any value other than 10 hex, the next instruction (after is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. Figure 11-a. FAT_READ_DUAL_INPUT_OUTPUT Instruction equence and Data-Out equence (M5-4 10h) IO0 IO Instruction (BBh) High Impedance MB 24-Bit Address M7-0 DIO switches from input to output IO IO MB Data Out MB MB Data Out 2 Data Out 3 Data Out 4 Data Out 5 7 MB Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 22 AMI Technology orp.

24 Figure 11-b. FAT_READ_DUAL_INPUT_OUTPUT Instruction equence and Data-Out equence ontinuous Read Mode, (M5-4=10h) Bit Address IO IO M7-0 DIO switches from input to output IO IO MB Data Out MB MB Data Out 2 Data Out 3 Data Out 4 Data Out 5 7 MB Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 23 AMI Technology orp.

25 Read Data Bytes at Higher peed by Quad Output (FAT_READ_QUAD_OUTPUT) The FAT_READ_QUAD_OUTPUT (6Bh) instruction is similar to the FAT_READ (0Bh) instruction except the data is output on four pins (IO0, IO1, IO2, IO3), instead of just DO. This allows data to be transferred from the A25LQ032 at quadruple the rate of standard PI devices. imilar to the FAT_READ instruction, the FAT_READ_QUAD_OUTPUT instruction can operate at the highest possible frequency of f (ee A haracteristics). This is accomplished by adding eight dummy clocks after the 24-bit address as shown in figure 12. The dummy clocks allow the device s internal circuits additional time for setting up the initial address. The input data during the dummy clocks is don t care. However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. Figure 12. FAT_READ_QUAD_OUTPUT Instruction equence and Data-Out equence IO0 IO1,2, Instruction (6Bh) High Impedance MB 24-Bit Address Dummy Byte IO switches from input to output IO IO IO IO Data Out 1Data Out 2Data Out 3Data Out 4 Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 24 AMI Technology orp.

26 Read Data Bytes at Higher peed by Quad Input and Quad Output (FAT_READ_QUAD_INPUT_OUTPUT) The FAT_READ_QUAD_INPUT_OUTPUT (EBh) instruction is similar to the FAT_READ (0Bh) instruction except the data is input and output on four pins (IO3, IO2, IO1, IO0) instead of just DO. This allows data to be transferred from the A25LQ032 at quadruple the rate of standard PI devices. The Quad Enable bit (QE) of tatus Register-2 must be set to enable the FAT_READ_QUAD_INPUT_OUTPUT Instruction. imilar to the FAT_READ instruction, the FAT_READ_QUAD_INPUT_OUTPUT instruction can operate at the highest possible frequency of f (ee A haracteristics). The FAT_READ_QUAD_INPUT_OUTPUT instruction can further reduce instruction overhead through setting the Mode bits (M7-0) after the input Address bits (A23-0), as shown in Figure 13-a. The upper nibble of the Mode (M7-4) bits controls the length of the next FAT_READ_QUAD_INPUT- OUTPUT instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the Mode (M3-0) bits are don t care ( x ). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock. If the Mode bits (M5-4) equal 10 hex, then the chip is into ontinuous Read Mode and the next FAT_READ_QUAD_INPUT_OUTPUT instruction (after is raised and then lowered) does not require the EBh instruction code, as shown in figure 13-b. This reduces the instruction sequence by eight clocks and allows the address to be immediately entered after is asserted low. If the Mode bits (M5-4) are any value other than 10 hex, the next instruction (after is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. Figure 13-a. FAT_READ_QUAD_INPUT_OUTPUT Instruction and Data-Out equence (M5-4 10h) IO0 IO Instruction (EBh) IO witches from Input to Output IO IO A23-16 A15-8 A7-0 M7-0 Dummy Dummy Data out 1 Data out 2 Note: Address bits A23 to A22 are Don t are, for A25LQ032. Figure 13-b. FAT_READ_QUAD_INPUT_OUTPUT Instruction and Data-Out equence ontinuous Read Mode, (M5-4=10h) IO IO witches from Input to Output IO IO IO A23-16 A15-8 A7-0 M7-0 Dummy Dummy Data out 1 Data out 2 Note: Address bits A23 to A22 are Don t are, for A25LQ032. PRELIMINARY (October, 2010, Version 0.3) 25 AMI Technology orp.

27 Read OTP (ROTP) The device is first selected by driving hip elect ( ) Low. The instruction code for the Read OTP (ROTP) instruction is followed by a 3-byte address (A23- A0) and a dummy byte. Each bit is latched in on the rising edge of erial lock (). Then the memory contents at that address are shifted out on erial Data output (DO). Each bit is shifted out at the maximum frequency, f(max.) on the falling edge of erial lock (). The instruction sequence is shown in Figure 14. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to h, allowing the read sequence to be continued indefinitely. The Read OTP (ROTP) instruction is terminated by driving hip elect ( ) High. hip elect ( ) can be driven High at any time during data output. Any Read OTP (ROTP) instruction issued while an Erase, Program or Write tatus Register cycle is in progress, is rejected without having any effect on the cycle that is in progress. Figure 14. Read OTP (ROTP) instruction and data-out sequence DI DO Instruction (4Bh or 48h) High Impedance MB 24-Bit Address Dummy Byte DI DO MB Data Out 1 MB Data Out n MB Note: A23 to A6 are don t care. (1 n 64) PRELIMINARY (October, 2010, Version 0.3) 26 AMI Technology orp.