Transient Voltage Suppressors. AK3 Series. Circuit Protection System ELECTRONICS
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1 ELECTRONICS Transient Suppressors K3 Series
2 Transient Suppressors - K3 Series Features Very low clamping voltage Ultra compact: less than one-tenth the size of traditional discrete solutions Sharp breakdown voltage Low slope resistance Bi-directional Foldbak technology for IEC ESD 15kV(ir), 8kV (Contact) ESD protection of data lines in accordance with IEC (IEC81-2) EFT protection of data lines in accordance with IEC (IEC81-4) Halogen-free RoHS compliant Glass passivated junction Cathode node Mechanical Characteristics Parameter Symbol Value Units Operating Storage Temperature Range Operating Junction Temperature Range P PPM 15 Watts P D 6.5 Watts Current Rating 1 IFSM 2 mps Note: 1. Rated IPP measured with 8/2μs pulse. Electriacl Characteristics Part Numbers Standoff (V SO ) Volts Max. Reverse Leakage (1 VSO μ Typical I 85 C (μ) Reverse Breakdown (V BR I T Test Current I T Max. Clamping V I pp Peak Pulse Current (I PP ) (Note 1) Max. Temp Coefficient OF V BR Max. Capacitance Bias 1kHz Min Volts Max Volts (m) V CL Volts I PP mps (%/ C) (nf) K3-15C ,.1 9. K3-3C , K3-58C ,.1 6. K3-66C ,.1 6. K3-76C ,.1 6. K3-15C , K3-17C , K3-38C ,.1 2. K3-43C ,.1 2. Note: Using 8/2μS wave shape as defined in IEC Page:1
3 Transient Suppressors - K3 Series Ratings and Characteristic Curves Figure 1 - Peak Power Derating Percent of Rated Value Figure 2 - Surge Response Current (k) T - M BIENT TEMPERTURE ( C) Figure 3 - Typical Peak Pulse Power Rating Curve (V) Figure 4 - Typical V BR Vs Junction Temperature P PPM -Peak Pulse Power (kw) 1 8/2μs 1 1/35μs K3-76C 1/1μs IPP Peak Pulse Current PP %I 1 5 t r Peak Value t r x =8/2μs t r = rise time to peak value = decay time to half value Half Value t Time (μs) -Pulse Width (sec.) Figure 5 - Surge Response (8/2 Surge current waveform) Figure 6 - Pulse Waveform Current Time (μs) Notes: 1. Foldback characteristic reduce the clamping voltage to near the breakdown voltage 2. The power dissipation causes a change in avalanche voltage during the surge and the avalanche voltage eventually returns to the original value when the transient has passed IPP Peak Pulse Current PP %I 1 5 t r Peak Value t r x =8/2μs t r = rise time to peak value = decay time to half value Half Value t Time (μs) Page:2
4 Transient Suppressors - K3 Series Physical Specifications Flow/Wave Soldering Weight Contact manufacturer Peak Temperature : 265 C Case Epoxy encapsulated Dipping Time : 1 seconds Termina Silver plated leads, solderable per MIL-STD-75, Method 226 Soldering : 1 time Dimensions Dimensions Inches Millimeters.951 +/ /- 1. B.94 +/ /-.6 G L2 L1 B C D F E C C -15C/-3C -58C/-66C -76C -15C/-17C -38C/-43C.236 +/ / / /- 1. D.433 max. 11. max. E.5 +/ /-.5 F.374 max. 9.5 max. -15C.93 +/ /- 1. Part Numbering -3C/-66C.13 +/ / C/-76C.168 +/ /- 1.2 G -15C.383 +/ /- 1.2 K3 - XXXX -17C.42 +/ / C.547 +/ /- 1.2 Series Type Stand Off (Please R efer to Electrical Characteristics Char t) -43C.583 +/ / C.429 +/ / C/-66C.49 +/ /- 1.2 Packing Options Part Number Component Package Quantity Packaging Option K3-XXXX K Package 56 Bulk L1 L2-58C/-76C.391 +/ / C.284 +/ / C.266 +/ / C.22 +/ / C.184 +/ /- 1.2 = - (G+L1) tolerance +/-.47 inch (+/- 1.2 mm) Page:3
5 RuiLongYuan Electronics Co., Ltd. Reproducing and modifying information of the document is prohibited without permission from Ruilongyuan International Inc. Ruilongyuan International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latesocument. Ruilongyuan International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Ruilongyuan International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. pplications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications.ruilongyuan International Inc. makes no representation or warranty that such applications will be suitable for the specifed use without further testing or modifcation. The products shown herein are noesigned and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment,aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Ruilongyuan International Inc. for any damages resulting from such improper use or sale. Tel: Fax: Page:4
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500mW, 5% Tolerance SMD Zener Diodes FEATURES Wide zener voltage range selection: 2.4V to 5V V Z tolerance selection of ± 5% Moisture sensitivity level: level, per J-STD-020 Compliant to RoHS directive
CP05 - CP24C MULTI-LINE TVS ARRAY PIN CONFIGURATIONS
MULTI-LINE TVS ARRAY Description The CPxx and CPxxC series are subminiature monolithic TVS suppressor arrays designed for the protection of sensitive IC components from the damaging effects of Electrostatic
ULL0402FC05C. Description. Mechanical characteristics PIN CONFIGURATION. SMART Phones Portable Electronics SMART Cards
LOW CAPACITANCE unbumped flip chip tvs array Description The ULLC0402FC05C Flip Chip employs advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic
ST0561D4. 1-Line Bi-directional TVS Diode. Description. Mechanical Characteristics. Applications. Features. Ordering Information
-Line Bi-directional TVS Diode Description The ST56D4 is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this
BZT52-B2V4S SERIES SURFACE MOUNT SILICON ZENER DIODES FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 200 mwatt FEATURES Planar Die construction 200mW Power Dissipation Zener Voltages from 2.4~75V Ideally Suited for Automated Assembly Processes
TSZL52C2V4 thru TSZL52C39 Taiwan Semiconductor. SMD Zener Diode. Small Signal Product FEATURES MECHANICAL DATA
SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 39V - Designed for mounting on small surface - Extremely thin / leadless package - Packing code with suffix "G" means green compound
PLR0524P ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION DFN-10 PACKAGE FEATURES APPLICATIONS MECHANICAL CHARACTERISTICS
ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION The is an ultra low capacitance steering diode/tvs array. This device is designed to protect computing applications such as gigabit Ethernet,
Features U-DFN Pin Description (Top View)
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary V BR (Min) I PP (Max) C I/O (Typ) 5.5V 3.5A 0.45pF Description The is a high-performance device suitable for protecting four high speed I/Os. These
SRV05-4 ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION SOT-23-6 PACKAGE APPLICATIONS FEATURES MECHANICAL CHARACTERISTICS PIN CONFIGURATION
ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION The is a dual USB port protection array that features ultra low capacitance. This device can be used in applications such as video cards, SMART
PSR3.3. ultra low capacitance steering diode/tvs array. Description. applications
ultra low capacitance steering diode/tvs array Description The is an ultra low capacitance (typically 1.5pF), transient voltage/steering diode suppressor array. This device provides circuit protection
GBLC03 - GBLC24C. Ethernet 10/100/1000 Base T SMART Phones Handheld - Wireless Systems USB Interface
ultra LOW CAPACITANCE TVS ARRAY Description The GBLCxx and GBLCxxC Series are ultra low capacitance transient voltage suppressor arrays, designed to protect applications such as portable electronics and
SP pF 8kV DFN Plastic Unidirectional Discrete TVS
SP1053 8.5pF 8kV 01005 DFN Plastic Unidirectional Discrete TVS RoHS Pb GREEN Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide
SP pF 30kV Bidirectional Discrete TVS
SP1326 15pF 30kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1326 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic
PLR0514LC ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION DFN-10 PACKAGE FEATURES APPLICATIONS MECHANICAL CHARACTERISTICS PIN CONFIGURATION
ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY DESCRIPTION The is an ultra low capacitance, 4-channel steering diode/tvs array. This device is designed to protect computing applications such as Gigabit
Maximun Ratings and Electrical Characteristics at 25 C
SOD123W Voltage Power Dissipation 9.1 to 220 V 1 W FEATURE Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance Low
Features. Applications
Description are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission