JIEJIE MICROELECTRONICS CO., Ltd
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1 JIEJIE MICROELECTRONICS CO., Ltd AK Series 6A Transient Voltage Suppressor Rev.2 DESCRIPTION: The AK6 series of high current bi-directional transient suppressors are designed for A.C. line protection and high power DC bus clamping applications. These devices offer bi-directional port protection from 15 volts to 43 volts. They provide a clamping voltage lower than the avalanche voltage. Therefore, any voltage rise due to increased current conduction is contained to a minimum, providing the best possible protection level. They can also be connected in series and/or parallel to create very high capacity protection solutions. FEATURES: Symbol Halogen-free. Bi-directional. RoHS compliant. Low slope resistance. Very low clamping voltage. Sharp breakdown voltage. Glass passivated junction. Foldback technology for superior clamping factor. High temperature soldering: 26 /1s at terminals. ABSOLUTE MAXIMUM RATINGS(TA=25, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Peak current rating per 8/2 μs IEC IPP 6 KA Operating junction temperature range TJ -55 to +125 Operating storage temperature range TSTG -55 to +15 TEL: / 5-
2 ELECTRICAL CHARACTERISTICS(TA=25 ) Part Number VR VBR@IT IT IR@VR VC@IPP IPP 1 Bi-Polar V Min(V) Max(V) ma μa V A AK6-15C AK6-2C AK6-25C AK6-3C AK6-42C AK6-58C AK6-66C AK6-76C AK6-1C AK6-133C AK6-17C AK6-19C AK6-24C AK6-275C AK6-3C AK6-38C AK6-43C Surge waveform:8/2μs VR: Stand-off voltage -- Maximum voltage that can be applied VBR: Breakdown voltage VC: Clamping voltage -- Peak voltage measured across the suppressor at a specified IPP IR: Reverse leakage current TEL: / 5-
3 RATINGS AND V I CHARACTERISTICS CURVES (TA=25, unless otherwise noted) FIG.1:V- I curve characteristics (Bi-directional) VC VBR VR IPP IT IR I IR IT IPP VR VBR VC V Percent of VBR change FIG.2: Typical VBR Vs Junction Temperature Junction Tempurature (TJ) 15 FIG.3: Pulse waveform IPPM(%IRSM) tr=8μs tr = rise time to peak value td = decay time to half value FIG.4: Pulse derating curve PPP derating in percentage(%) Peak value Half value td t(μs) TA( ) SOLDERING PARAMETERS FIG.5: Lead-free profile Temperature( ) Maximum Wave 26C Tab1: Flow/Wave soldering Peak temperature 265 Dipping time 1 seconds Soldering 1 times Time(minutes) TEL: / 5-
4 PACKAGE MECHANICAL DATA A L2 G L1 F C D B E Size A Size B Symbol Inches Millimeter Symbol Inches Millimeter A.951± ±1. A.63±.2 16.±.5 B.94± ±.6 B.94± ±.6 C.236±.4 6.±1. C.236±.4 6.±1. D.56max 14.max D.56max 14.max E.5± ±.5 E.5± ±.5 F.56max 14.max F.56max 14.max 15C to 25C.16max 4.max 15C to 25C.16max 4.max 3C to 42C.2max 5.max 3C to 42C.2max 5.max 58C to 76C.24max 6.max 58C to 76C.24max 6.max G 1C to 133C.32max 8.max G 1C to 133C.32max 8.max 17C to 19C.39max 1.max 17C to 19C None None 24C to 3C.55max 14.max 24C to 3C None None 38C to 43C.7max 17.max 38C to 43C None None L1/L2 L1=L2 tolerance±.47inch(±1.2 mm) L1/L2 L1=L2 tolerance±.47inch(±1.2 mm) Part Number Case Type Quantity Packing Option AK6-XXC AKS 84pcs Box TEL: / 5-
5 MARKING& ORDERING INFORMATION AK6-XXC AK 6 - XX C (1) (2) (3) (4) (1) AK series (2) IPP=6KA (3) Reverse stand-off voltage (4) Bi-directional Apply to P/N listed below: AK6-15C; AK6-2C; AK6-25C; AK6-3C; AK6-42C; AK6-58C; AK6-66C; AK6-76C; AK6-1C; AK6-133C; Type 1 - Side View AK6-XXC AK 6 - XX C (1) (2) (3) (4) (1) AK series (2) IPP=6KA (3) Reverse stand-off voltage (4) Bi-directional Apply to P/N listed below: AK6-17C AK6-19C AK6-24C AK6-275C AK6-3C AK6-38C AK6-43C Type 2 - Top View Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the second version which is made in 6-May-217. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright 217 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL: / 5-
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Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Features 3 2 1 SOT323-3L AEC-Q101 qualified Dual-line ESD and EOS protection Stand-off voltage compatible
SDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD), electrical
GSE0524A. 4-Line ESD Protection Low Capacitance Bi-direction TVS. Product Description. Applications. Packages & Pin Assignments SOT-23-6L GSE0524A
4-Line ESD Protection Low Capacitance Bi-direction TVS Product Description The is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of a pair of ESD diodes
4-Line BUS-Port ESD Protection
4-Line BUS-Port ESD Protection 2397 6 5 4 1 2 3 MARKING (example only) XX YY Dot = pin 1 marking XX = date code YY = type code (see table below) 2453 1 DESIGN SUPPORT TOOLS click logo to get started Models
UMD UNITED MICRO DEVICE INC. Small Surface Mount Device TVS. Description. SOD-523 Pin Configuration. Features. Mechanical Characteristics
SOD-523 Single Line Diode for ESD Protection Description diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They offer
MCC 2EZ5.1D5 THRU 2EZ75D5. Features Glass Passivation Junction. 2 W Glass Passivated Junction Silicon Zener Diode 5.
omponents 76 Marilla Street Chatsworth!"# $%!"# EZ.D THRU EZ7D Features Glass Passivation Junction Lead Free Finish/RoHS Compliant (Note C) ("P"Suffix designates Compliant. See ordering information) Excellent
PAM2CAN CAN BUS ESD PROTECTION DIODE DESCRIPTION SOT-23 PACKAGE APPLICATIONS FEATURES MECHANICAL CHARACTERISTICS PIN CONFIGURATION
CAN BUS ESD PROTECTION DIODE DESCRIPTION The is designed to protect Controller Area Network (CAN) bus lines and other industrial applications from the damaging effects of Electrostatic Discharge (ESD)
0504A PESDR0504S2. 4-Line Low Capacitance TVS Diode Array. Mechanical Characteristics. Description. Applications. Features. Marking Information
4-Line Low Capacitance TVS Diode Array Description The is a low capacitance TVS array, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making
UMD12L-323 UNITED MICRO DEVICE INC. Description. Ultra Low Capacitance TVS. SOD-323 Pin Configuration. Mechanical Characteristics.
Description diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA s. They offer superior electrical characteristics such as
Description. Features. Continuous RA8 Series RA16 Series RA22 Series Units. ) 4 to to to 275 V DC Voltage Range (V M(DC)
RA Varistor Series RoHS Description The RA Series transient surge suppressors are varistors (MOVs) supplied in a low-profile box that features a precise seating plane to increase mechanical stability for
AZ H Transient Voltage Suppressing Device For ESD/Transient Protection. Features. Circuit Diagram / Pin Configuration. Applications.
Features ESD Protection for Line with Bi-directional. Provide ESD protection for the protected line to IEC 6000-4- (ESD) ±0kV (air), ±kv (contact) IEC 6000-4-4 (EFT) 40A (5/50ns) IEC 6000-4-5 (Lightning)
SPE6V8UH Ultra Low Capacitance 4 -Line ESD Protection Array
DESCRIPTION The SPE6V8UH is 4-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic