CYPRESS SEMICONDUCTOR CORPORATION Internal Correspondence

Transcription

1 CYPRESS SEMICONDUCTOR CORPORATION Internal Correspondence TITLE: 2Mb/1Mb F-RAM NPI Last Updated: 06/13/2014 Frequently Asked Questions Contents Product Family Features... 2 Application Types... 3 Competition/Positioning... 3 Support... 4 Document No: Rev. ** Page 1 of 5

2 Product Family Features Q1. Is this product available in any grade other than I? A: Yes, 2Mb SPI interface devices are available in industrial I (-40 C to 85 C), extended industrial Q (-40 C to 105 C) and automotive E (-40 C to 125 C) temperature grades. 2Mb/1Mb parallel F-RAM devices are available in industrial I (40 C to 85 C) temperature grade only. Q2. Is 2Mb/1Mb F-RAM automotive qualified (AEC-Q100)? A: 2Mb SPI interface F-RAMs are AEC-Q100 qualified for automotive applications. 2Mb/1Mb parallel F-RAMs are not automotive AEC-Q100 qualified. Q3. What is the power consumption of 2Mb/1Mb F-RAM devices? A: The table below gives the maximum power consumption for 2Mb/1Mb SPI and parallel F-RAM devices: Family Interface Voltage Active Standby Current (Max) Current (Max) FM25V20A SPI V 3 MHz 250 µa (@85 C) CY15B102Q SPI V 5 MHz 750 µa (@125 C) FM28V202A Parallel V 12 ((((@125 C)125 C) 250 µa (@85 C) access time FM28V102A Parallel V 12 access time 250 µa (@85 C) Q4. Is F-RAM affected by magnetic fields? A: F-RAM is called Ferro-electric RAM because the F-RAM cell follows the same hysteresis loop as a Ferro Magnet, but there is no Ferro material in F-RAM. Therefore, F-RAM data is not affected by magnetic fields. Q5. An F-RAM cell is made of PZT (Lead Zirconate Titanate) and has a small amount of Lead. Are these parts Lead-free? A: Per the RoHS spec, the content of Lead in the device must be less than 1,000 ppm. In F-RAM devices, the Lead content is lower than this threshold; therefore, F-RAM devices are considered lead-free according to specification. Document No: Rev. ** Page 2 of 5

3 Application Types Q6. What are the applications for 2Mb Serial F-RAM? A: Multifunction printers Industrial controls Smart meters Automotive electronics Medical wearables Q7. What are the applications for 2Mb/1Mb Parallel F-RAM? A: Industrial automation Computing and networking Competition/Positioning Q8. Does F-RAM require additional capacitors or batteries to retain data on power loss, as EEPROM and BBSRAM do? A: F-RAM does not require additional capacitors or batteries to retain data on power loss. Q9. Does F-RAM need wear leveling as EEPROM does? A: F-RAM doesn t need any wear leveling firmware because it supports very high endurance cycles of 100 trillion cycles which is 100 million times more than EEPROM endurance. Cypress F-RAM provides a product life cycle of more than 1,000 years in normal operation. Q10. Like EEPROM, should I take care of any write delay while using an F- RAM? A: The data is written into an F-RAM cell at bus speed. Therefore, there is no need to provision a delay in the firmware to complete a write operation. Q11. What is the best way to position our 2Mb serial F-RAM against serial EEPROM? A: The best way to position serial F-RAM over serial EEPROM is as follows. F-RAM: 1. Eliminates Soak Time and the need for additional capacitors or batteries to complete a Page Write on power loss 2. Provides 100 trillion write cycles, eliminating the need for Wear Leveling 3. Consumes 2x to 5x less active power than EEPROM 4. Protects data with radiation- and magnetic field-tolerant F-RAM memory cells Document No: Rev. ** Page 3 of 5

4 Q12. How does a serial EEPROM with 1.2 million endurance cycles meet the high-endurance requirement of an industrial control data logging system? A: A typical high-performance industrial control data logger module logs critical data in intervals as fast as 100ms. This means if a page of data is written every 100ms, a 2Mb serial EEPROM will be full in ~1.5 minutes. Therefore, for a typical 15-years lifespan of the system, the endurance requirement will be 5,913,000 cycles. To achieve this, a serial EEPROM based solution will require at least five 2Mb Serial EEPROMs. Q13. What type of applications require up to 8x EEPROM memory capacity to account for Wear Leveling? A: For all applications that require the higher performance and higher endurance of F-RAM over EEPROM, our customers have demonstrated they would need 4x to 8x EEPROM capacity over F-RAM. Specifically for higher densities (2Mb), our industrial control customers have demonstrated a 4x to 6x EEPROM capacity requirement as shown in Q12. For medium densities (256kb), our automotive customers have demonstrated a 6x to 8x capacity requirement. For lower densities (64kb and below), our metering customers have demonstrated an 8x capacity requirement. Support Q14. What is the best contact for any technical questions about F-RAM? A: If you have a question or need clarification on an answer, please cypressfram@cypress.com. Document No: Rev. ** Page 4 of 5

5 Document Title: 2Mb/1Mb F-RAM NPI Document No.: Rev. ECN No. Orig. of Description of Change Change ** TUP FAQ moved from memo TUP-314 to spec per CFB-594 NPI Distribution verbatim learning: updated EVC to match 1K Cypress web pricing and FAQ to address EVC slide Document No: Rev. ** Page 5 of 5