All Devices Discontinued!

Size: px
Start display at page:

Download "All Devices Discontinued!"

Transcription

1 GAL 6LVC/D Device Datasheet June All Devices Discontinued! Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status. Product Line Ordering Part Number Product Status Reference PCN GAL6LVC-7LJ GAL6LVC-7LJN PCN#6-7 GAL6LVC GAL6LVC-LJ GAL6LVC-LJN GAL6LVC-5LJ Discontinued GAL6LVC-5LJN PCN#9- GAL6LVD-3LJ GAL6LVD GAL6LVD-3LJN GAL6LVD-5LJ GAL6LVD-5LJN 5555 N.E. Moore Ct. Hillsboro, Oregon Phone (53) 6- FAX (53) nternet:

2 Lead-Free Package Options Available! GAL6LV Low Voltage E CMOS PLD Generic Array Logic Features Functional Block Diagram HGH PERFORMANCE E CMOS TECHNOLOGY 3.5 ns Maximum Propagation Delay Fmax = 5 MHz.5 ns Maximum from Clock nput to Data Output UltraMOS Advanced CMOS Technology 3.3V LOW VOLTAGE 6V ARCHTECTURE JEDEC-Compatible 3.3V nterface Standard 5V Compatible nputs /O nterfaces with Standard 5V TTL Devices (GAL6LVC) ACTVE PULL-UPS ON ALL PNS (GAL6LVD Only) E CELL TECHNOLOGY Reconfigurable Logic Reprogrammable Cells % Tested/% Yields High Speed Electrical Erasure (<ms) Year Data Retention EGHT OUTPUT LOGC MACROCELLS Maximum Flexibility for Complex Logic Designs Programmable Output Polarity PRELOAD AND POWER-ON RESET OF ALL REGSTERS % Functional Testability APPLCATONS NCLUDE: Glue Logic for 3.3V Systems DMA Control State Machine Control High Speed Graphics Processing Standard Logic Speed Upgrade ELECTRONC SGNATURE FOR DENTFCATON LEAD-FREE PACKAGE OPTONS Description The GAL6LVD, at 3.5 ns maximum propagation delay time, provides the highest speed performance available in the PLD market. The GAL6LVC can interface with both 3.3V and 5V signal levels. The GAL6LV is manufactured using Lattice Semiconductor's advanced 3.3V E CMOS process, which combines CMOS with Electrically Erasable (E ) floating gate technology. High speed erase times (<ms) allow the devices to be reprogrammed quickly and efficiently. The 3.3V GAL6LV uses the same industry standard 6V architecture as its 5V counterpart and supports all architectural features such as combinatorial or registered macrocell operations. Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers % field programmability and functionality of all GAL products. n addition, erase/write cycles and data retention in excess of years are specified. /CLK PROGRAMMABLE AND-ARRAY (64 X 3) Pin Configuration 4 6 PLCC /CLK Vcc GAL6LV Top View GND /OE CLK OE /OE Copyright 4 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. LATTCE SEMCONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 974, U.S.A. August 4 Tel. (53) 6-; --LATTCE; FAX (53) 6-556; 6lv_5

3 Specifications GAL6LV GAL6LV Ordering nformation Conventional Packaging Commercial Grade Specifications T pd (ns) T su (ns) T co (ns) cc (ma) Ordering # Lead-Free Packaging Commercial Grade Specifications T pd (ns) T su (ns) T co (ns) cc (ma) Ordering # Part Number Description GAL6LVD GAL6LVC L = Low Power Device Name Speed (ns) Power _ XXXXXXXX XX X XX X Package GAL6LVD-3LJ -Lead PLCC GAL6LVD-5LJ -Lead PLCC GAL6LVC-7LJ -Lead PLCC GAL6LVC-LJ -Lead PLCC 5 65 GAL6LVC-5LJ -Lead PLCC Package GAL6LVD-3LJN Lead-Free -Lead PLCC GAL6LVD-5LJN Lead-Free -Lead PLCC GAL6LVC-7LJN Lead-Free -Lead PLCC GAL6LVC-LJN Lead-Free -Lead PLCC 5 65 GAL6LVC-5LJN Lead-Free -Lead PLCC. Discontinued per PCN #6-7. Contact Rochester Electronics for available inventory. Grade Package Blank = Commercial J = PLCC JN = Lead-free PLCC

4 Specifications GAL6LV Output Logic Macrocell () The following discussion pertains to configuring the output logic macrocell. t should be noted that actual implementation is accomplished by development software/hardware and is completely transparent to the user. There are three global configuration modes possible: simple, complex, and registered. Details of each of these modes are illustrated in the following pages. Two global bits, SYN and AC, control the mode configuration for all macrocells. The XOR bit of each macrocell controls the polarity of the output in any of the three modes, while the AC bit of each of the macrocells controls the input/output configuration. These two global and 6 individual architecture bits define all possible configurations in a GAL6LV. The information given on these architecture bits is only to give a better understanding of the device. Compiler software will transparently set these architecture bits from the pin definitions, so the user should not need to directly manipulate these architecture bits. The following is a list of the PAL architectures that the GAL6LV can emulate. t also shows the mode under which the GAL6LV emulates the PAL architecture. Compiler Support for Software compilers support the three different global modes as different device types. These device types are listed in the table below. Most compilers have the ability to automatically select the device type, generally based on the register usage and output enable (OE) usage. Register usage on the device forces the software to choose the registered mode. All combinatorial outputs with OE controlled by the product term will force the software to choose the complex mode. The software will choose the simple mode only when all outputs are dedicated combinatorial without OE control. The different device types listed in the table can be used to override the automatic device selection by the software. For further details, refer to the compiler software manuals. When using compiler software to configure the device, the user must pay special attention to the following restrictions in each mode. n registered mode pin and pin are permanently configured PAL Architectures Emulated by GAL6LV 6R 6R6 6R4 6RP 6RP6 6RP4 6L 6H 6P L L6 4L4 6L H H6 4H4 6H P P6 4P4 6P GAL6LV Global Mode Registered Registered Registered Registered Registered Registered Complex Complex Complex as clock and output enable, respectively. These pins cannot be configured as dedicated inputs in the registered mode. n complex mode pin and pin become dedicated inputs and use the feedback paths of pin 9 and pin respectively. Because of this feedback path usage, pin 9 and pin do not have the feedback option in this mode. n simple mode all feedback paths of the output pins are routed via the adjacent pins. n doing so, the two inner most pins ( pins 5 and 6) will not have the feedback option as these pins are always configured as dedicated combinatorial output. Registered Complex Auto Mode Select ABEL P6VR P6VC P6VAS P6V CUPL G6VMS G6VMA G6VAS G6V LOG/iC GAL6V_R GAL6V_C7 GAL6V_C GAL6V OrCAD-PLD "Registered" "Complex" "" GAL6VA PLDesigner P6VR P6VC P6VC P6VA TANGO-PLD G6VR G6VC G6VAS 3 G6V ) Used with Configuration keyword. ) Prior to Version. support. 3) Supported on Version. or later. 3

5 Specifications GAL6LV Registered Mode n the Registered mode, macrocells are configured as dedicated registered outputs or as /O functions. Dedicated input or output functions can be implemented as subsets of the /O function. Architecture configurations available in this mode are similar to the common 6R and 6RP4 devices with various permutations of polarity, /O and register placement. All registered macrocells share common clock and output enable control pins. Any macrocell can be configured as registered or / O. Up to eight registers or up to eight /Os are possible in this mode. OE CLK XOR D Q Q Registered outputs have eight product terms per output. /Os have seven product terms per output. The JEDEC fuse numbers, including the User Electronic Signature (UES) fuses and the Product Term Disable (PTD) fuses, are shown on the logic diagram on the following page. Registered Configuration for Registered Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC= defines this output configuration. - Pin controls common CLK for the registered outputs. - Pin controls common OE for the registered outputs. - Pin & Pin are permanently configured as CLK & OE for registered output configuration. Combinatorial Configuration for Registered Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC= defines this output configuration. - Pin & Pin are permanently configured as CLK & OE for registered output configuration. XOR Note: The development software configures all of the architecture control bits and checks for proper pin usage automatically. 4

6 Specifications GAL6LV Registered Mode Logic Diagram PLCC Package Pinout PTD 9 XOR-4 AC- XOR-49 AC- XOR-5 AC- XOR-5 AC-3 XOR-5 AC-4 XOR-53 AC-5 XOR-54 AC-6 XOR-55 AC-7 OE SYN-9 AC-93 5

7 Specifications GAL6LV Complex Mode n the Complex mode, macrocells are configured as output only or /O functions. Up to six /Os are possible in this mode. Dedicated inputs or outputs can be implemented as subsets of the /O function. The two outer most macrocells (pins & 9) do not have input capability. Designs requiring eight /Os can be implemented in the Registered mode. Architecture configurations available in this mode are similar to the common 6L and 6P devices with programmable polarity in each macrocell. XOR All macrocells have seven product terms per output. One product term is used for programmable output enable control. Pins and are always available as data inputs into the AND array. The JEDEC fuse numbers including the UES fuses and PTD fuses are shown on the logic diagram on the following page. Combinatorial /O Configuration for Complex Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC=. - Pin 3 through Pin are configured to this function. Combinatorial Output Configuration for Complex Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC=. - Pin and Pin 9 are configured to this function. XOR Note: The development software configures all of the architecture control bits and checks for proper pin usage automatically. 6

8 Specifications GAL6LV 7 PLCC Package Pinout PTD SYN-9 AC-93 XOR-55 AC-7 XOR-54 AC-6 XOR-53 AC-5 XOR-5 AC-4 XOR-5 AC-3 XOR-5 AC- XOR-49 AC- XOR-4 AC Complex Mode Logic Diagram

9 Specifications GAL6LV Mode n the mode, macrocells are configured as dedicated inputs or as dedicated, always active, combinatorial outputs. Architecture configurations available in this mode are similar to the common L and P6 devices with many permutations of generic output polarity or input choices. All outputs in the simple mode have a maximum of eight product terms that can control the logic. n addition, each output has programmable polarity. XOR XOR Vcc Vcc Pins and are always available as data inputs into the AND array. The center two macrocells (pins 5 & 6) cannot be used as input or /O pins, and are only available as dedicated outputs. The JEDEC fuse numbers including the UES fuses and PTD fuses are shown on the logic diagram. Combinatorial Output with Feedback Configuration for Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC= defines this configuration. - All except pins 5 & 6 can be configured to this function. Combinatorial Output Configuration for Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC= defines this configuration. - Pins 5 & 6 are permanently configured to this function. Dedicated nput Configuration for Mode - SYN=. - AC=. - XOR= defines Active Low Output. - XOR= defines Active High Output. - AC= defines this configuration. - All except pins 5 & 6 can be configured to this function. Note: The development software configures all of the architecture control bits and checks for proper pin usage automatically.

10 Specifications GAL6LV 9 PLCC Package Pinout PTD 9 XOR-4 AC- XOR-49 AC- XOR-5 AC- XOR-5 AC-3 XOR-5 AC-4 XOR-53 AC-5 XOR-54 AC-6 XOR-55 AC-7 SYN-9 AC Mode Logic Diagram

11 Specifications GAL6LVD Absolute Maximum Ratings () Recommended Operating Conditions Supply voltage V CC....5 to +4.6V nput voltage applied....5 to +5.6V /O voltage applied....5 to +4.6V Off-state output voltage applied....5 to +4.6V Storage Temperature to 5 C Ambient Temperature with Power Applied to 5 C.Stresses above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications). DC Electrical Characteristics Commercial Devices: Ambient Temperature (T A )... to 75 C Supply voltage (V CC ) with Respect to Ground to +3.6V SYMBOL PARAMETER CONDTON MN. TYP. 3 MAX. UNTS VL nput Low Voltage Vss.3. V VH nput High Voltage. 5.5 V /O High Voltage. Vcc+.5 V L nput or /O Low Leakage Current V VN VL (MAX.) μa H nput or /O High Leakage Current (Vcc-.)V VN VCC μa nput High Leakage Current Vcc VN 5.5V μa /O High Leakage Current Vcc VN 4.6V ma VOL Output Low Voltage OL = MAX. Vin = VL or VH.4 V OL = 5μA Vin = VL or VH. V VOH Output High Voltage OH = MAX. Vin = VL or VH.4 V OH = -μa Vin = VL or VH Vcc-.V V OL Low Level Output Current ma OH High Level Output Current ma OS Output Short Circuit Current VCC = 3.3V VOUT =.5V T A = 5 C 5 ma COMMERCAL CC Operating Power VL = V VH = 3.V Unused nputs at VL 45 7 ma Supply Current Over Recommended Operating Conditions (Unless Otherwise Specified) ftoggle = MHz Outputs Open ) The leakage current is due to the internal pull-up resistor on all pins. See nput Buffer section for more information. ) One output at a time for a maximum duration of one second. Vout =.5V was selected to avoid test problems caused by tester ground degradation. Characterized but not % tested. 3) Typical values are at Vcc = 3.3V and TA = 5 C

12 Specifications GAL6LVD AC Switching Characteristics PARAMETER TEST COND. DESCRPTON Over Recommended Operating Conditions -3 MN. MAX. tpd A nput or /O to Combinational Output ns tco A Clock to Output Delay.5 3 ns tcf 3 Clock to Feedback Delay ns tsu Setup Time, nput or Feedback before Clock 3 4 ns th Hold Time, nput or Feedback after Clock ns A Maximum Clock Frequency with 4. MHz External Feedback, /(tsu + tco) fmax 4 A Maximum Clock Frequency with 66 MHz nternal Feedback, /(tsu + tcf) A Maximum Clock Frequency with 5 66 MHz No Feedback twh 4 Clock Pulse Duration, High 3 ns twl 4 Clock Pulse Duration, Low 3 ns ten B nput or /O to Output Enabled ns B OE to Output Enabled ns tdis C nput or /O to Output Disabled ns C OE to Output Disabled ns ) Refer to Switching Test Conditions section. ) Minimum values for tpd and tco are not % tested but established by characterization. 3) Calculated from fmax with internal feedback. Refer to fmax Descriptions section. 4) Refer to fmax Descriptions section. Characterized but not % tested. COM Capacitance (T A = 5 C, f =. MHz) SYMBOL PARAMETER TYPCAL UNTS TEST CONDTONS C nput Capacitance 5 pf V CC = 3.3V, V = V C /O /O Capacitance 5 pf V CC = 3.3V, V /O = V MN. COM -5 MAX. UNTS

13 Specifications GAL6LVC Absolute Maximum Ratings () Recommended Operating Conditions Supply voltage V CC....5 to +5.6V nput voltage applied....5 to +5.6V Off-state output voltage applied....5 to +5.6V Storage Temperature to 5 C Ambient Temperature with Power Applied to 5 C.Stresses above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications). DC Electrical Characteristics Commercial Devices: Ambient Temperature (T A )... to 75 C Supply voltage (V CC ) with Respect to Ground to +3.6V SYMBOL PARAMETER CONDTON MN. TYP. MAX. UNTS VL nput Low Voltage Vss.5. V VH nput High Voltage. 5.5 V L nput or /O Low Leakage Current V VN VL (MAX.) - μa H nput or /O High Leakage Current (VCC -.)V VN VCC μa VCC VN 5.5V 3 ma VOL Output Low Voltage OL = MAX. Vin = VL or VH.4 V OL = 5 μa Vin = VL or VH. V VOH Output High Voltage OH = MAX. Vin = VL or VH.4 V OH = -5 μa Vin = VL or VH Vcc-.45 V OH = - μa Vin = VL or VH Vcc-. V OL Low Level Output Current ma OH High Level Output Current -4 ma OS Output Short Circuit Current VCC = 3.3V VOUT =.5V TA = 5 C - -6 ma COMMERCAL Over Recommended Operating Conditions (Unless Otherwise Specified) CC Operating Power VL =.V VH = 3.V ma Supply Current ftoggle = MHz Outputs Open ) One output at a time for a maximum duration of one second. Vout =.5V was selected to avoid test problems by tester ground degradation. Characterized but not % tested. ) Typical values are at Vcc = 3.3V and TA = 5 C

14 Specifications GAL6LVC AC Switching Characteristics PARAMETER TEST COND. Over Recommended Operating Conditions (Unless Otherwise Specified) DESCRPTON tpd A nput or /O to Combinational Output ns tco A Clock to Output Delay 5 7 ns tcf 3 Clock to Feedback Delay 4 5 ns tsu Setup Time, nput or Feedback before Clock 6 7 ns th Hold Time, nput or Feedback after Clock ns A Maximum Clock Frequency with MHz External Feedback, /(tsu + tco) fmax 4 A Maximum Clock Frequency with MHz nternal Feedback, /(tsu + tcf) A Maximum Clock Frequency with MHz No Feedback twh Clock Pulse Duration, High 5 6 ns twl Clock Pulse Duration, Low 5 6 ns ten B nput or /O to Output Enabled 9 5 ns B OE to Output Enabled 6 5 ns tdis C nput or /O to Output Disabled 9 5 ns C OE to Output Disabled 6 5 ns ) Refer to Switching Test Conditions section. ) Minimum values for tpd and tco are not % tested but established by characterization. 3) Calculated from fmax with internal feedback. Refer to fmax Descriptions section. 4) Refer to fmax Descriptions section. Characterized but not % tested. SYMBOL PARAMETER TYPCAL UNTS TEST CONDTONS C nput Capacitance pf V CC = 3.3V, V = V C /O /O Capacitance pf V CC = 3.3V, V /O = V MN. COM -7 MAX. MN. COM Capacitance (T A = 5 C, f =. MHz) - MAX. MN. COM -5 MAX. UNTS 3

15 Specifications GAL6LV Switching Waveforms NPUT or /O FEEDBACK VALD NPUT tsu th NPUT or /O FEEDBACK COMBNATONAL OUTPUT NPUT or /O FEEDBACK COMBNATONAL OUTPUT CLK Combinatorial Output tdis nput or /O to Output Enable/Disable twh /fmax (w/o fb) Clock Width VALD NPUT tpd twl ten CLK REGSTERED OUTPUT OE REGSTERED OUTPUT /fmax (external fdbk) Registered Output OE to Output Enable/Disable CLK REGSTERED FEEDBACK tdis tcf fmax with Feedback tco ten /fmax (internal fdbk) tsu 4

16 Specifications GAL6LV fmax Descriptions CLK LOGC ARRAY REGSTER CLK tsu fmax with External Feedback /(tsu+tco) Note: fmax with external feedback is calculated from measured tsu and tco. LOGC ARRAY tsu + th CLK REGSTER fmax with No Feedback Note: fmax with no feedback may be less than /(twh + twl). This is to allow for a clock duty cycle of other than 5%. tco LOGC ARRAY tcf tpd REGSTER fmax with nternal Feedback /(tsu+tcf) Note: tcf is a calculated value, derived by subtracting tsu from the period of fmax w/internal feedback (tcf = /fmax - tsu). The value of tcf is used primarily when calculating the delay from clocking a register to a combinatorial output (through registered feedback), as shown above. For example, the timing from clock to a combinatorial output is equal to tcf + tpd. 5

17 Specifications GAL6LV GAL6LVD: Switching Test Conditions nput Pulse Levels GND to 3.V nput Rise and Fall Times.5ns % 9% nput Timing Reference Levels.5V Output Timing Reference Levels.5V Output Load See Figure GAL6LVD Output Load Conditions (see figure) Test Condition R CL A 5Ω 35pF B High Z to Active High at.9v 5Ω 35pF High Z to Active Low at.v 5Ω 35pF C Active High to High Z at.9v 5Ω 35pF Active Low to High Z at.v 5Ω 35pF GAL6LVC: Switching Test Conditions nput Pulse Levels GND to 3.V nput Rise and Fall Times.5ns % 9% nput Timing Reference Levels.5V Output Timing Reference Levels.5V Output Load See Figure 3-state levels are measured.5v from steady-state active level. GAL6LVC Output Load Conditions (see figure) Test Condition R R CL A 36Ω 34Ω 35pF B Active High 36Ω 34Ω 35pF Active Low 36Ω 34Ω 35pF C Active High 36Ω 34Ω 5pF Active Low 36Ω 34Ω 5pF FROM OUTPUT (O/Q) UNDER TEST TEST PONT Z = 5Ω, CL = 35pF* *C L NCLUDES TEST FXTURE AND PROBE CAPACTANCE FROM OUTPUT (O/Q) UNDER TEST +3.3V R C * L +.45V TEST PONT *C L NCLUDES TEST FXTURE AND PROBE CAPACTANCE R R 6

18 Specifications GAL6LV Electronic Signature Output Register Preload An electronic signature is provided in every GAL6LV device. t contains 64 bits of reprogrammable memory that can contain user defined data. Some uses include user D codes, revision numbers, or inventory control. The signature data is always available to the user independent of the state of the security cell. NOTE: The electronic signature is included in checksum calculations. Changing the electronic signature will alter the checksum. Security Cell A security cell is provided in the GAL6LV devices to prevent unauthorized copying of the array patterns. Once programmed, this cell prevents further read access to the functional bits in the device. This cell can only be erased by re-programming the device, so the original configuration can never be examined once this cell is programmed. The Electronic Signature is always available to the user, regardless of the state of this control cell. Latch-Up Protection GAL6LV devices are designed with an on-board charge pump to negatively bias the substrate. The negative bias minimizes the potential of latch-up caused by negative input undershoots. Device Programming GAL devices are programmed using a Lattice Semiconductor-approved Logic Programmer, available from a number of manufacturers. Complete programming of the device takes only a few seconds. Erasing of the device is transparent to the user, and is done automatically as part of the programming cycle. When testing state machine designs, all possible states and state transitions must be verified in the design, not just those required in the normal machine operations. This is because, in system operation, certain events occur that may throw the logic into an illegal state (power-up, line voltage glitches, brown-outs, etc.). To test a design for proper treatment of these conditions, a way must be provided to break the feedback paths, and force any desired (i.e., illegal) state into the registers. Then the machine can be sequenced and the outputs tested for correct next state conditions. GAL6LV devices include circuitry that allows each registered output to be synchronously set either high or low. Thus, any present state condition can be forced for test sequencing. f necessary, approved GAL programmers capable of executing text vectors perform output register preload automatically. nput Buffers GAL6LV devices are designed with TTL level compatible input buffers. These buffers have a characteristically high impedance, and present a much lighter load to the driving logic than bipolar TTL devices. The GAL6LVD input and /O pins have built-in active pull-ups. As a result, unused inputs and /O's will float to a TTL "high" (logical ""). Lattice Semiconductor recommends that all unused inputs and tri-stated /O pins be connected to another active input, V CC, or Ground. Doing this will tend to improve noise immunity and reduce CC for the device. nput Current (μa) Typical nput Pull-up Characteristic (GAL6LVD) nput Voltage (V)

19 Specifications GAL6LV Power-Up Reset Vcc Vcc (min.) tsu CLK NTERNAL REGSTER Q - OUTPUT FEEDBACK/EXTERNAL OUTPUT REGSTER Circuitry within the GAL6LV provides a reset signal to all registers during power-up. All internal registers will have their Q outputs set low after a specified time (tpr, μs MAX). As a result, the state on the registered output pins (if they are enabled) will always be high on power-up, regardless of the programmed polarity of the output pins. This feature can greatly simplify state machine design by providing a known state on power-up. Because of the asynchronous nature of system power-up, some nput/output Equivalent Schematics PN PN Vcc ESD Protection Circuit ESD Protection Circuit Active Pull-up Circuit (GAL6LVD Only) Vref Vcc Vcc tpr twl nternal Register Reset to Logic "" Device Pin Reset to Logic "" conditions must be met to provide a valid power-up reset of the device. First, the VCC rise must be monotonic. Second, the clock input must be at static TTL level as shown in the diagram during power up. The registers will reset within a maximum of tpr time. As in normal system operation, avoid clocking the device until all input and feedback path setup times have been met. The clock must also meet the minimum pulse width requirements. Feedback Data Output Tri-State Control Active Pull-up Circuit (GAL6LVD Only) Vcc Vref PN PN Typ. Vref = Vcc Typ. Vref = Vcc Feedback (To nput Buffer) Typical nput Typical Output

20 Specifications GAL6LV GAL6LVD: Typical AC and DC Characteristic Diagrams Normalized Tpd vs Vcc Normalized Tco vs Vcc Normalized Tsu vs Vcc Normalized Tpd Normalized Tpd. PT H->L.5 PT L->H Supply Voltage (V) Normalized Tpd vs Temp.3.. PT H->L PT L->H Temperature (deg. C) Delta Tpd (ns) Normalized Tco Normalized Tco.5 RSE Delta Tpd vs # of Outputs Switching Number of Outputs Switching Supply Voltage (V) Normalized Tco vs Temp RSE Temperature (deg. C) RSE Delta Tco (ns) Normalized Tsu Normalized Tsu Delta Tco vs # of Outputs Switching Delta Tpd (ns) Delta Tpd vs Output Loading RSE Delta Tco (ns) Number of Outputs Switching Supply Voltage (V) PT H->L PT L->H Normalized Tsu vs Temp PT H->L PT L->H RSE Delta Tco vs Output Loading Temperature (deg. C) RSE Output Loading (pf) Output Loading (pf) 9

21 Specifications GAL6LV GAL6LVD: Typical AC and DC Characteristic Diagrams Vol vs ol Voh vs oh Voh vs oh Delta cc (ma) Normalized cc Vol (V) ol (ma) Normalized cc vs Vcc Supply Voltage (V) Delta cc vs Vin ( input) Vin (V) Voh (V) Normalized cc ik (ma) oh(ma) Normalized cc vs Temp Temperature (deg. C) nput Clamp (Vik) Vik (V) Voh (V) Normalized cc oh(ma) Normalized cc vs Freq Frequency (MHz)

22 Specifications GAL6LV GAL6LVC: Typical AC and DC Characteristic Diagrams Normalized Tpd vs Vcc Normalized Tco vs Vcc Normalized Tsu vs Vcc... Normalized Tpd Normalized Tpd PT H->L. PT L->H Supply Voltage (V) Normalized Tpd vs Temp.3.. PT H->L PT L->H Temperature (deg. C) Delta Tpd (ns) Delta Tpd (ns) Normalized Tco Normalized Tco RSE Delta Tpd vs # of Outputs Switching Number of Outputs Switching Supply Voltage (V) Normalized Tco vs Temp RSE Temperature (deg. C) RSE Delta Tpd vs Output Loading RSE Delta Tco (ns) Delta Tco (ns) Normalized Tsu Normalized Tsu Delta Tco vs # of Outputs Switching Number of Outputs Switching Output Loading (pf) Output Loading (pf) Supply Voltage (V) PT H->L PT L->H Normalized Tsu vs Temp PT H->L PT L->H RSE Delta Tco vs Output Loading 34 3 RSE Temperature (deg. C)

23 Specifications GAL6LV GAL6LVC: Typical AC and DC Characteristic Diagrams Vol vs ol Voh vs oh Voh vs oh 4 3 Normalized cc Vol (V) Delta cc (ma) ol (ma) Normalized cc vs Vcc Supply Voltage (V) Delta cc vs Vin ( input) Vin (V) Voh (V) Normalized cc ik (ma) oh (ma) Normalized cc vs Temp Temperature (deg. C) nput Clamp (Vik) Vik (V) Voh (V) Normalized cc oh (ma) Normalized cc vs Freq Frequency (MHz)

GAL20V8 PROGRAMMABLE AND-ARRAY (64 X 40) High Performance E 2 CMOS PLD Generic Array Logic. Features. Functional Block Diagram.

GAL20V8 PROGRAMMABLE AND-ARRAY (64 X 40) High Performance E 2 CMOS PLD Generic Array Logic. Features. Functional Block Diagram. GALV High Performance E CMOS PLD Generic Array Logic Features Functional Block Diagram HGH PERFORMANCE E CMOS TECHNOLOGY 5 ns Maximum Propagation Delay Fmax = 66 MHz ns Maximum from Clock nput to Data

More information

GAL16VP8. Discontinued Product (PCN #02-06). Contact Rochester Electronics for Availability.

GAL16VP8. Discontinued Product (PCN #02-06). Contact Rochester Electronics for Availability. Features HGH DRVE E 2 CMOS GAL DEVCE TTL Compatible 6 ma Output Drive 5 ns Maximum Propagation Delay Fmax = MHz ns Maximum from Clock nput to Data Output UltraMOS Advanced CMOS Technology ENHANCED NPUT

More information

GAL20VP8. Discontinued Product (PCN #02-06). Contact Rochester Electronics for Availability.

GAL20VP8. Discontinued Product (PCN #02-06). Contact Rochester Electronics for Availability. Features HGH DRVE E 2 CMOS GAL DEVCE TTL Compatible 64 ma Output Drive 5 ns Maximum Propagation Delay Fmax = MHz ns Maximum from Clock nput to Data Output UltraMOS Advanced CMOS Technology ENHANCED NPUT

More information

All Devices Discontinued!

All Devices Discontinued! GAL V Device Datasheet September All Devices Discontinued! Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been

More information

GAL16V8 High Performance E 2 CMOS PLD Generic Array Logic

GAL16V8 High Performance E 2 CMOS PLD Generic Array Logic Package Options Available! GAL6V High Performance E CMOS PLD Generic Array Logic Features Functional Block Diagram HGH PERFORMANCE E CMOS TECHNOLOGY 3.5 ns Maximum Propagation Delay Fmax = 5 MHz 3. ns

More information

Lead-Free Package Options Available! I/CLK I I I I I I I I GND

Lead-Free Package Options Available! I/CLK I I I I I I I I GND Lead-Free Package Options Available! GALV High Performance E CMOS PLD Generic Array Logic Features HGH PERFORMANCE E CMOS TECHNOLOGY 3.5 ns Maximum Propagation Delay Fmax = 5 MHz 3. ns Maximum from Clock

More information

All Devices Discontinued!

All Devices Discontinued! GAL 6VZ/GAL6VZD Device Datasheet June 2 All Devices Discontinued! Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. The original datasheet pages have not

More information

GAL16V8. Specifications GAL16V8 PROGRAMMABLE AND-ARRAY (64 X 32) High Performance E 2 CMOS PLD Generic Array Logic DIP PLCC GAL 16V8 GAL16V8

GAL16V8. Specifications GAL16V8 PROGRAMMABLE AND-ARRAY (64 X 32) High Performance E 2 CMOS PLD Generic Array Logic DIP PLCC GAL 16V8 GAL16V8 Specifications GALV GALV High Performance E CMOS PLD Generic Array Logic FEATURES FUNCTONAL BLOCK DAGRAM HGH PERFORMANCE E CMOS TECHNOLOGY 5 ns Maximum Propagation Delay Fmax = MHz ns Maximum from Clock

More information

All Devices Discontinued!

All Devices Discontinued! ispgal 22V Device Datasheet June 2 All Devices Discontinued! Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet The original datasheet pages have not been

More information

GAL20V8. Specifications GAL20V8 PROGRAMMABLE AND-ARRAY (64 X 40) High Performance E 2 CMOS PLD Generic Array Logic DIP PLCC I/CLK GAL 20V8 GAL20V8

GAL20V8. Specifications GAL20V8 PROGRAMMABLE AND-ARRAY (64 X 40) High Performance E 2 CMOS PLD Generic Array Logic DIP PLCC I/CLK GAL 20V8 GAL20V8 Specifications GALV GALV High Performance E CMOS PLD Generic Array Logic FEATURES FUNCTONAL BLOCK DAGRAM HGH PERFORMANCE E CMOS TECHNOLOGY 5 ns Maximum Propagation Delay Fmax = 66 MHz ns Maximum from Clock

More information

ATF16V8B. High Performance Flash PLD. Features. Block Diagram. Description. Pin Configurations

ATF16V8B. High Performance Flash PLD. Features. Block Diagram. Description. Pin Configurations Features Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several

More information

High- Performance Flash PLD ATF16V8B. Features. Block Diagram. Pin Configurations

High- Performance Flash PLD ATF16V8B. Features. Block Diagram. Pin Configurations Features Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High-Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several

More information

GAL16V8Z GAL16V8ZD. Specifications GAL16V8Z GAL16V8ZD PROGRAMMABLE AND-ARRAY (64 X 32) Zero Power E 2 CMOS PLD DIP/SOIC PLCC

GAL16V8Z GAL16V8ZD. Specifications GAL16V8Z GAL16V8ZD PROGRAMMABLE AND-ARRAY (64 X 32) Zero Power E 2 CMOS PLD DIP/SOIC PLCC FEATURES ZERO POWER E 2 CMOS TECHNOLOGY µa Standby Current nput Transition Detection on GAL6VZ Dedicated Power-down Pin on nput and Output Latching During Power Down HGH PERFORMANCE E 2 CMOS TECHNOLOGY

More information

SDO SDI MODE SCLK MODE

SDO SDI MODE SCLK MODE Specifications ispgal22v ispgal22v n-system Programmable E 2 CMOS PLD Generic Array Logic FEATURES N-SYSTEM PROGRAMMABLE (5-V ONLY) -Wire Serial Programming nterface Minimum, Program/Erase Cycles Built-in

More information

ATF20V8B. High Performance Flash PLD. Features. Block Diagram. Pin Configurations

ATF20V8B. High Performance Flash PLD. Features. Block Diagram. Pin Configurations Features Industry Standard Architecture Emulates Many 24-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several

More information

PEEL 18CV8-5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features

PEEL 18CV8-5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features PEEL 18CV8-5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low

More information

USE isplsi 2096E FOR NEW DESIGNS

USE isplsi 2096E FOR NEW DESIGNS Lead- Free Package Options Available! isplsi 2096/A In-System Programmable High Density PLD Features ENHANCEMENTS isplsi 2096A is Fully Form and Function Compatible to the isplsi 2096, with Identical Timing

More information

USE isplsi 2064E FOR NEW DESIGNS

USE isplsi 2064E FOR NEW DESIGNS Lead- Free Package Options Available! isplsi 2064/A In-System Programmable High Density PLD Features ENHANCEMENTS isplsi 2064A is Fully Form and Function Compatible to the isplsi 2064, with Identical Timing

More information

USE isplsi 2032E FOR NEW DESIGNS

USE isplsi 2032E FOR NEW DESIGNS Lead- Free Package Options Available! isplsi 2032/A In-System Programmable High Density PLD Features ENHANCEMENTS isplsi 2032A is Fully Form and Function Compatible to the isplsi 2032, with Identical Timing

More information

USE isplsi 2032E FOR NEW DESIGNS

USE isplsi 2032E FOR NEW DESIGNS isplsi 202/A In-System Programmable High Density PLD Features ENHANCEMENTS isplsi 202A is Fully Form and Function Compatible to the isplsi 202, with Identical Timing Specifcations and Packaging isplsi

More information

2128E In-System Programmable SuperFAST High Density PLD. isplsi. Functional Block Diagram. Features. Description

2128E In-System Programmable SuperFAST High Density PLD. isplsi. Functional Block Diagram. Features. Description isplsi 2128E In-System Programmable SuperFAST High Density PLD Features SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC 6000 PLD Gates 128 I/O Pins, Eight Dedicated Inputs 128 Registers High Speed

More information

PEEL 20V8-15/-25 CMOS Programmable Electrically Erasable Logic Device

PEEL 20V8-15/-25 CMOS Programmable Electrically Erasable Logic Device Preliminary Commercial -15/-25 CMOS Programmable Electrically Erasable Logic Device Compatible with Popular 20V8 Devices 20V8 socket and function compatible Programs with standard 20V8 JEDEC file 24-pin

More information

PEEL 16V8-15/-25 CMOS Programmable Electrically Erasable Logic

PEEL 16V8-15/-25 CMOS Programmable Electrically Erasable Logic -5/-25 CMOS Programmable Electrically Erasable Logic Compatible with Popular 6V8 Devices 6V8 socket and function compatible Programs with standard 6V8 JEDEC file 20-pin DP and PLCC packages CMOS Electrically

More information

Input Bus. Description

Input Bus. Description isplsi 2032E In-System Programmable SuperFAST High Density PLD Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC 1000 PLD Gates 32 I/O Pins, Two Dedicated Inputs 32 Registers High Speed Global

More information

Highperformance EE PLD ATF16V8B ATF16V8BQ ATF16V8BQL. Features. Block Diagram. All Pinouts Top View

Highperformance EE PLD ATF16V8B ATF16V8BQ ATF16V8BQL. Features. Block Diagram. All Pinouts Top View Features Industry-standard Architecture Emulates Many 20-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-pin Delay Several

More information

PAL22V10 Family, AmPAL22V10/A

PAL22V10 Family, AmPAL22V10/A FINAL COM L: -7//5 PAL22V Family, AmPAL22V/A 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS As fast as 7.5-ns propagation delay and 9 MHz fmax (external) Macrocells

More information

USE isplsi 1016EA FOR NEW DESIGNS

USE isplsi 1016EA FOR NEW DESIGNS Lead- Free Package Options Available! isplsi 06E In-System Programmable High Density PLD Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC 2000 PLD Gates 2 I/O Pins, Four Dedicated Inputs

More information

TSSOP CLK/IN IN IN IN IN IN IN IN IN IN IN GND VCC IN I/O I/O I/O I/O I/O I/O I/O I/O IN OE/IN CLK/IN 1 VCC

TSSOP CLK/IN IN IN IN IN IN IN IN IN IN IN GND VCC IN I/O I/O I/O I/O I/O I/O I/O I/O IN OE/IN CLK/IN 1 VCC * Features Industry Standard Architecture Emulates Many 24-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-pin Delay Several

More information

PALCE16V8 Family EE CMOS 20-Pin Universal Programmable Array Logic

PALCE16V8 Family EE CMOS 20-Pin Universal Programmable Array Logic FINAL COM L: H-5/7/10/15/25, -10/15/25 IND: H-10/15/25, -20/25 PALCE16V8 Family EE CMOS 20-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS Pin and function compatible with all 20-pin

More information

Input Bus. Description

Input Bus. Description isplsi 2032E In-System Programmable SuperFAST High Density PLD Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC 000 PLD Gates 32 I/O Pins, Two Dedicated Inputs 32 Registers High Speed Global

More information

USE isplsi 1048EA FOR NEW DESIGNS

USE isplsi 1048EA FOR NEW DESIGNS Lead- Free Package Options Available! isplsi 048E In-System Programmable High Density PLD Features Functional Block Diagram HIGH DENSITY PROGRAMMABLE LOGIC 8,000 PLD Gates 96 I/O Pins, Twelve Dedicated

More information

PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device

PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features PEEL 22V10A-7/-10/-15/-25 MOS Programmable Electrically Erasable Logic Device High Speed/Low Power - Speeds ranging from 7ns to 25ns - Power as low as 30mA at 25MHz Electrically Erasable Technology

More information

Highperformance EE PLD ATF16V8C. Features. Block Diagram. Pin Configurations. All Pinouts Top View

Highperformance EE PLD ATF16V8C. Features. Block Diagram. Pin Configurations. All Pinouts Top View Features Industry-standard Architecture Emulates Many 20-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 5 ns Maximum Pin-to-pin Delay Low-power

More information

COM L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/20/25. Programmable AND Array (44 x 132) OUTPUT LOGIC MACRO CELL OUTPUT LOGIC MACRO CELL

COM L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/20/25. Programmable AND Array (44 x 132) OUTPUT LOGIC MACRO CELL OUTPUT LOGIC MACRO CELL FINAL COM L: H-5/7//5/25, -/5/25 IND: H-/5/2/25 PALCE22V Family 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS As fast as 5-ns propagation delay and 42.8 MHz fmax (external) Low-power

More information

All Devices Discontinued!

All Devices Discontinued! isplsi 1048C Device Datasheet September 2010 All Devices Discontinued! Product Change Notificatio (PCNs) have been issued to discontinue all devices in this data sheet. The original datasheet pages have

More information

Lead- Free Package Options Available! Input Bus. Description

Lead- Free Package Options Available! Input Bus. Description Lead- Free Package Options Available! isplsi 064VE.V In-System Programmable High Density SuperFAST PLD Features SuperFAST HIGH DENSITY PROGRAMMABLE LOGIC 000 PLD Gates 64 and Pin Versions, Four Dedicated

More information

Industry Standard Architecture Emulates Many 20-pin PALs Low-cost, Easy to Use Software Tools. Advanced Flash Technology Reprogrammable 100% Tested

Industry Standard Architecture Emulates Many 20-pin PALs Low-cost, Easy to Use Software Tools. Advanced Flash Technology Reprogrammable 100% Tested ATF16V8C High Performance Electrically-Erasable PLD DATASHEET Features Industry Standard Architecture Emulates Many 20-pin PALs Low-cost, Easy to Use Software Tools High Speed Electrically-Erasable Programmable

More information

High Performance Electrically-erasable Programmable Logic Devices

High Performance Electrically-erasable Programmable Logic Devices Features Industry-standard architecture Emulates Many 20-pin PALs Low-cost, easy to use software tools High speed electrically-erasable programmable logic devices (EE PLD) 5ns maximum pin-to-pin delay

More information

Input Bus. Description

Input Bus. Description isplsi 202VE.V In-System Programmable High Density SuperFAST PLD Features SuperFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC 000 PLD Gates 2 Pins, Two Dedicated Inputs 2 Registers High Speed Global Interconnect

More information

PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device

PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 μa (typical) at standby - Icc = 2 ma (typical) at 1 MHz CMOS Electrically

More information

Functional Block Diagram. Description

Functional Block Diagram. Description isplsi 1024EA In-System Programmable High Density PLD Features Functional Block Diagram HIGH DENSITY PROGRAMMABLE LOGIC 4000 PLD Gates 48 I/O Pins, Two Dedicated Inputs 144 Registers High Speed Global

More information

USE ispmach 4A5 FOR NEW 5V DESIGNS. isplsi. 1016EA In-System Programmable High Density PLD. Functional Block Diagram. Features.

USE ispmach 4A5 FOR NEW 5V DESIGNS. isplsi. 1016EA In-System Programmable High Density PLD. Functional Block Diagram. Features. isplsi 06EA In-System Programmable High Density PLD Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC 2000 PLD Gates 32 I/O Pins, One Dedicated Input 96 Registers High-Speed Global Interconnect

More information

isplsi 1016EA In-System Programmable High Density PLD Functional Block Diagram Features Description

isplsi 1016EA In-System Programmable High Density PLD Functional Block Diagram Features Description isplsi 06EA In-System Programmable High Density PLD Features HIGH-DENSITY PROGRAMMABLE LOGIC 2000 PLD Gates 32 I/O Pins, One Dedicated Input 96 Registers High-Speed Global Interconnect Wide Input Gating

More information

Functional Block Diagram A0 A1 A2 A3 A4 A5 A6 A7. Output Routing Pool. Description

Functional Block Diagram A0 A1 A2 A3 A4 A5 A6 A7. Output Routing Pool. Description isplsi 1048EA In-System Programmable High Density PLD Features HIGH DENSITY PROGRAMMABLE LOGIC 8,000 PLD Gates 96 I/O Pins, Eight Dedicated Inputs 288 Registers High-Speed Global Interconnects Wide Input

More information

3.3 Volt CMOS Bus Interface 8-Bit Latches

3.3 Volt CMOS Bus Interface 8-Bit Latches Q 3.3 Volt CMOS Bus Interface 8-Bit Latches QS74FCT3373 QS74FCT32373 FEATURES/BENEFITS Pin and function compatible to the 74F373 JEDEC spec compatible 74LVT373 and 74FCT373T IOL = 24 ma Com. Available

More information

Functional Block Diagram A0 A1 A2 A3 A4 A5 A6 A7. Output Routing Pool. Description

Functional Block Diagram A0 A1 A2 A3 A4 A5 A6 A7. Output Routing Pool. Description isplsi 048EA In-System Programmable High Density PLD Features HIGH DENSITY PROGRAMMABLE LOGIC 8,000 PLD Gates 96 I/O Pins, Eight Dedicated Inputs 288 Registers High-Speed Global Interconnects Wide Input

More information

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations

4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory AT49F040 AT49F040T AT49F040/040T AT49F040/040T. Features. Description. Pin Configurations Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By

More information

Highperformance EE PLD ATF16V8B ATF16V8BQ ATF16V8BQL

Highperformance EE PLD ATF16V8B ATF16V8BQ ATF16V8BQL Features Industry-standard Architecture Emulates Many 20-pin PALs Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices 10 ns Maximum Pin-to-pin Delay Several

More information

FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS

FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS Integrated Device Technology, Inc. FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS IDT54/74FCT161/A/C IDT54/74FCT163/A/C FEATURES: IDT54/74FCT161/163 equivalent to FAST speed IDT54/74FCT161A/163A 35%

More information

CAT28C K-Bit Parallel EEPROM

CAT28C K-Bit Parallel EEPROM 256K-Bit Parallel EEPROM HALOGENFREE LEAD TM FREE FEATURES Fast read access times: 120/150ns Low power CMOS dissipation: Active: 25 ma max Standby: 150 µa max Simple write operation: On-chip address and

More information

3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER

3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER . CMOS OCTAL IDIRECTIONAL TRANSCEIVER. CMOS OCTAL IDIRECTIONAL TRANSCEIVER IDT7FCT/A FEATURES: 0. MICRON CMOS Technology ESD > 00 per MIL-STD-, Method 0; > 0 using machine model (C = 00pF, R = 0) VCC =.

More information

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C128. Advanced Micro Devices. 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 128 Kilobit (16,384 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 45 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single

More information

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations

AT29C K (32K x 8) 5-volt Only CMOS Flash Memory. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control

More information

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH IDTQS32X2245 FEATURES: Enhanced N channel FET with no inherent diode to Vcc Dual '245 function 25Ω resistor for low noise Low propagation

More information

128Kx8 CMOS MONOLITHIC EEPROM SMD

128Kx8 CMOS MONOLITHIC EEPROM SMD 128Kx8 CMOS MONOLITHIC EEPROM SMD 5962-96796 WME128K8-XXX FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns JEDEC Approved Packages 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) 32 lead,

More information

Introduction to GAL Device Architectures

Introduction to GAL Device Architectures ntroduction to GAL evice Architectures Overview n 195, Lattice Semiconductor introduced a new type of programmable logic device (PL) that transformed the PL market: the Generic Array Logic (GAL) device.

More information

CAT28C17A 16K-Bit CMOS PARALLEL EEPROM

CAT28C17A 16K-Bit CMOS PARALLEL EEPROM 16K-Bit CMOS PARALLEL EEPROM HALOGENFREE LEAD TM FREE FEATURES Fast Read Access Times: 200 ns Low Power CMOS Dissipation: Active: 25 ma Max. Standby: 100 µa Max. Simple Write Operation: On-Chip Address

More information

TSSOP CLK/IN IN IN IN IN IN IN 19 I/O I/O I/O IN IN IN IN GND. TSSOP is the smallest package of SPLD offering. DIP/SOIC CLK/IN VCC I/O

TSSOP CLK/IN IN IN IN IN IN IN 19 I/O I/O I/O IN IN IN IN GND. TSSOP is the smallest package of SPLD offering. DIP/SOIC CLK/IN VCC I/O Features 3.0V to 5.5V Operating Range Lowest Power in It Class Advanced Low-voltage, Zero-power, Electrically Erasable Programmable Logic Device Zero Standby Power (25 µa Maximum) (Input Transition Detection)

More information

1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations

1-Megabit (128K x 8) 5-volt Only Flash Memory AT29C010A. Features. Description. Pin Configurations Features Fast Read Access Time - 70 ns 5-Volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (128 bytes/sector) Internal Address and Data Latches for

More information

High-performance Electrically Erasable Programmable Logic Device

High-performance Electrically Erasable Programmable Logic Device Features Industry Standard Architecture Low-cost Easy-to-use Software Tools High-speed, Electrically Erasable Programmable Logic Devices CMOS and TTL Compatible Inputs and Outputs Input and Pull-up Resistors

More information

FAST CMOS OCTAL BUFFER/LINE DRIVER

FAST CMOS OCTAL BUFFER/LINE DRIVER FAST CMOS OCTAL BUFFER/LINE DRIVER IDT74FCT240A/C FEATURES: IDT74FCT240A 25% faster than FAST IDT74FCT240C up to 55% faster than FAST 64mA IOL CMOS power levels (1mW typ. static) Meets or exceeds JEDEC

More information

4-Megabit 2.7-volt Only Serial DataFlash AT45DB041. Features. Description. Pin Configurations

4-Megabit 2.7-volt Only Serial DataFlash AT45DB041. Features. Description. Pin Configurations Features Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation Single Cycle Reprogram (Erase and Program) 2048 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers

More information

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations

AT28C16. 16K (2K x 8) CMOS E 2 PROM. Features. Description. Pin Configurations Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor

More information

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 10-BIT BUS SWITCH WITH FLOW-THROUGH PINOUT IDTQS361 FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs

More information

1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations

1-megabit (64K x 16) 5-volt Only Flash Memory AT49F1024A Features Description Pin Configurations BDTIC www.bdtic.com/atmel Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 45 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time

More information

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C020. Advanced Micro Devices. 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 2 Megabit (262,144 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 70 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved pinout Plug

More information

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL

Am27C512. Advanced Micro Devices. 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL FINAL 512 Kilobit (65,536 x 8-Bit) CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Fast access time 55 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single

More information

IDT54/74FCT244/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FEATURES: OEA OEB DA1 OA1 DB1 OB1 DA2 OA2 OB2 DB2 DA3 OA3

IDT54/74FCT244/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FEATURES: OEA OEB DA1 OA1 DB1 OB1 DA2 OA2 OB2 DB2 DA3 OA3 FAST CMOS OCTAL BUFFER/LINE DRIVER IDT/7FCT/A/C FEATURES: IDT/7FCTA equivalent to FAST speed and drive IDT/7FCTA % faster than FAST IDT/7FCTC up to % faster than FAST IOL = ma (commercial) and 8mA (military)

More information

USE isplsi 1016EA FOR NEW COMMERCIAL & INDUSTRIAL DESIGNS

USE isplsi 1016EA FOR NEW COMMERCIAL & INDUSTRIAL DESIGNS isplsi 1 In-System Programmable High Deity PLD Features Functional Block Diagram HIGH-DENSITY PROGRMMBLE LOGIC High-Speed Global Interconnect PLD Gates 3 I/O Pi, Four Dedicated Inputs 9 Registers Wide

More information

IDT74FST BIT 2:1 MUX/DEMUX SWITCH

IDT74FST BIT 2:1 MUX/DEMUX SWITCH 16-BIT 2:1 MUX/DEMUX SWITCH IDT74FST163233 FEATURES: Bus switches provide zero delay paths Low switch on-resistance TTL-compatible input and output levels ESD > 200 per MIL-STD-883, Method 3015; > 20 using

More information

Introduction to Generic Array Logic

Introduction to Generic Array Logic Introduction to Generic Array Logic Introduction to Generic Array Logic Overview Lattice Semiconductor Corporation (LSC), the inventor of the Generic Array Logic (GAL ) family of low density, E 2 CMOS

More information

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DOUBLE-WIDTH BUS SWITCH IDTQS32X245 FEATURES: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs Dual

More information

IDT54/74FCT541/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM

IDT54/74FCT541/A/C FAST CMOS OCTAL BUFFER/LINE DRIVER DESCRIPTION: FUNCTIONAL BLOCK DIAGRAM FAST CMOS OCTAL BUFFER/LINE DRIVER IDT/7FCT/A/C FEATURES: IDT/7FCT equivalent to FAST speed and drive IDT/7FCTA % faster than FAST IDT/7FCTC up to % faster than FAST IOL = ma (commercial) and 8mA (military)

More information

Am27C Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM

Am27C Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM FINAL 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time 45 ns maximum access time Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout Single

More information

FAST CMOS OCTAL BUFFER/LINE DRIVER

FAST CMOS OCTAL BUFFER/LINE DRIVER FAST CMOS OCTAL BUFFER/LINE DRIVER IDT54/74FCT244T/AT/CT FEATURES: Std., A, and C grades Low input and output leakage 1µA (max.) CMOS power levels True TTL input and output compatibility: VOH = 3. (typ.)

More information

Am27C Megabit (256 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP

Am27C Megabit (256 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP FINAL Am27C020 2 Megabit (256 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Speed options as fast as 55 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved

More information

LOW-VOLTAGE 24-BIT BUS EXCHANGE SWITCH

LOW-VOLTAGE 24-BIT BUS EXCHANGE SWITCH LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH LOW-VOLTAGE 4-BIT BUS EXCHANGE ITCH IDT74CBTLV6 FEATURES: 5Ω A/B bi-directional switch Isolation Under Power-Off Conditions Over-voltage tolerant Latch-up performance

More information

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8)

AT24C01A/02/04/08/16. 2-Wire Serial CMOS E 2 PROM. Features. Description. Pin Configurations. 1K (128 x 8) 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) AT24C01A/02/04/08/16 Features Low Voltage and Standard Voltage Operation 5.0 (V CC = 4.5V to 5.5V) 2.7 (V CC = 2.7V to 5.5V) 2.5 (V CC = 2.5V to 5.5V) 1.8 (V CC = 1.8V to 5.5V) Internally Organized 128

More information

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM

93C76/86. 8K/16K 5.0V Microwire Serial EEPROM FEATURES DESCRIPTION PACKAGE TYPES BLOCK DIAGRAM 8K/16K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES Single 5.0V supply Low power CMOS technology - 1 ma active current typical ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization

More information

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout CMOS Static RAM 1 Meg (K x -Bit) Revolutionary Pinout IDT714 Features K x advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/gnd) for reduced noise Equal access and cycle times

More information

LOW-VOLTAGE OCTAL BUS SWITCH

LOW-VOLTAGE OCTAL BUS SWITCH LOW-VOLTAGE OCTAL BUS ITCH IDT74CBTLV44 FEATURES: Pin-out compatible with standard '44 Logic products 5Ω A/B bi-directional switch Isolation under power-off conditions Over-voltage tolerant Latch-up performance

More information

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs AT28LV010 BDTIC www.bdtic.com/atmel Features Single 3.3V ± 10% Supply Fast Read Access Time 200 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write

More information

IDT74LVCH16373A TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O AND BUS-HOLD

IDT74LVCH16373A TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O AND BUS-HOLD 3.3V CMOS 16-BIT IDT74LVCH16373A TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, 5 T TOLERANT I/O AND BUS-HOLD FEATURES: Typical tsk(0) (Output Skew) < 250ps ESD > 200 per MIL-STD-883, Method 3015; > 20

More information

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005

ISSI IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES DESCRIPTION. Advanced Information January 2005 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM January 2005 FEATURES Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) Low power CMOS Active current less than 3.0

More information

QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH

QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH BUS SWITCH IDTQS3VH125 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to

More information

QUICKSWITCH PRODUCTS 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH

QUICKSWITCH PRODUCTS 2.5V / 3.3V 8-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS 2.5V / 3.3V -BIT HIGH BANDWIDTH BUS SWITCH IDTQS3VH244 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or GND

More information

Am27C Kilobit (8 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP

Am27C Kilobit (8 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP FINAL Am27C64 64 Kilobit (8 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Speed options as fast as 45 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout

More information

Pm39F010 / Pm39F020 / Pm39F040

Pm39F010 / Pm39F020 / Pm39F040 1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 4.5 V - 5.5 V Memory Organization - Pm39F010: 128K x 8 (1 Mbit) - Pm39F020: 256K x 8 (2

More information

QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH

QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH245 FEATURES: N channel FET switches with no parasitic diode to VCC Isolation under power-off conditions No DC path to VCC or

More information

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES

QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE LOW ENABLES IDTQS315 FEATURES: Enhanced N channel FET with no inherent diode to Vcc Pin compatible with the 74 15 function

More information

CAT22C Bit Nonvolatile CMOS Static RAM

CAT22C Bit Nonvolatile CMOS Static RAM 256-Bit Nonvolatile CMOS Static RAM FEATURES Single 5V Supply Fast RAM Access Times: 200ns 300ns Infinite E 2 PROM to RAM Recall CMOS and TTL Compatible I/O Power Up/Down Protection 100,000 Program/Erase

More information

SN54LVTH16240, SN74LVTH V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

SN54LVTH16240, SN74LVTH V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation Support Mixed-Mode Signal Operation (5-V Input

More information

IDT74CBTLV3257 LOW-VOLTAGE QUAD 2:1MUX/DEMUX BUS SWITCH

IDT74CBTLV3257 LOW-VOLTAGE QUAD 2:1MUX/DEMUX BUS SWITCH LOW-VOLTAGE QUAD 2:1 MUX/DEMUX BUS ITCH LOW-VOLTAGE QUAD 2:1MUX/DEMUX BUS ITCH IDT74CBTLV3257 FEATURES: Functionally equivalent to QS3257 5Ω switch connection between two ports Isolation under power-off

More information

Am27C Megabit (128 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP

Am27C Megabit (128 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION BLOCK DIAGRAM V CC V SS V PP FINAL Am27C2048 2 Megabit (128 K x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Speed options as fast as 55 ns Low power consumption 100 µa maximum CMOS standby current JEDEC-approved

More information

3.3V CMOS 1-TO-5 CLOCK DRIVER

3.3V CMOS 1-TO-5 CLOCK DRIVER 3. CMOS 1-TO-5 CLOCK DRIVER 3. CMOS 1-TO-5 CLOCK DRIVER IDT74FCT38075 FEATURES: Advanced CMOS Technology Guaranteed low skew < 100ps (max.) Very low duty cycle distortion< 250ps (max.) High speed propagation

More information

QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH

QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH IDTQS3VH1662 FEATURES: N channel FET switches with no parasitic diode to Vcc Isolation under power-off conditions No DC path

More information

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations

2-Megabit (256K x 8) 5-volt Only CMOS Flash Memory AT29C020. Features. Description. Pin Configurations Features Fast Read Access Time - 90 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for

More information

IDT74LVC541A 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O

IDT74LVC541A 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 T TOLERANT I/O IDT74LVC541A FEATURES: 0.5 MICRON CMOS Technology ESD > 200 per MIL-STD-883, Method 3015; > 20 using machine model (C = 200pF, R

More information

Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040

Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V Memory Organization - Pm39LV512: 64K x 8 (512 Kbit) - Pm39LV010:

More information

White Electronic Designs

White Electronic Designs 12Kx32 EEPROM MODULE, SMD 5962-9455 FEATURES Access Times of 120**, 140, 150, 200, 250, 300ns Packaging: 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic Ceramic HIP (Package 400) 6 lead, 22.4mm sq.

More information