Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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1 Freescale emiconductor Technical Data Integrated ilicon Pressure ensor On-hip ignal onditioned, Temperature ompensated and alibrated The series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This sensor combines a highly sensitive implanted strain gauge with advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure. Rev 6, 01/2007 ITERATED PREURE EOR 0 to 6 kpa (0 to 0.87 psi) 0.2 to 4.7 V OUTPUT THROUH-HOLE Features Temperature ompensated over 10 to 60 Ideally uited for icroprocessor or icrocontroller-based ystems Available in auge urface ount (T) or Through-hole (DIP) onfigurations Durable Thermoplastic (PP) Package 7U AE 482B-03 7U AE series pressure sensors are available in the basic element package or with pressure ports. Two packing options are offered for the 482 and 482A case configurations. URFAE OUT ORDERI IFORATIO Device Type Options ase o. PX eries Order o. Packing Options arking Basic Element Element Only 482 6U Rails Element Only 482 6T1 Tape & Reel Element Only 482B 7U Rails 6U/6T1 AE U/6T1 AE 482A-01 Ported Element Axial Port 482A 6U Rails Axial Port 482A 6T1 Tape & Reel Axial Port 482 7U Rails ide Port 1369 P Trays Dual Port 1351 PXV4006DP Trays PXV4006DP AE P AE PI UBER (1) 1 / 5 / 2 V 6 / 3 nd 7 / 4 V out 8 / 1. Pins 1, 5, 6, 7, and 8 are internal device connections. Do not connect to external circuitry or ground. Pin 1 is noted by the notch i n the lead. Freescale emiconductor, Inc., All rights reserved.
2 V ensing Element Thin Film Temperature ompensation and ain tage #1 ain tage #2 and round Reference hift ircuitry V out D Pins 1, 5, 6, 7, and 8 are O OET for small outline package device Figure 1. Fully Integrated Pressure ensor chematic Table 1. aximum Ratings (1) Parametrics ymbol Value Units aximum Pressure (P1 >P2) P max 24 kpa torage Temperature T stg -30 to +100 Operating Temperature T A -10 to Exposure beyond the specified limits may cause permanent damage or degradation to the device. Table 2. Operating haracteristics haracteristic ymbol in Typ ax Unit Pressure Range P OP kpa upply Voltage (1) V Vdc upply urrent I 10 madc Full cale Output (2) Offset (3)(5) (RF = 51kΩ) (RF = 51kΩ) V F 4.6 V V off V ensitivity V/P 766 mv/kpa Accuracy (4)(5) (10 to 60 ) ±5.0 %V F 1. Device is ratiometric within this specified excitation range. 2. Full cale pan (V F ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 3. Offset (V off ) is defined as the output voltage at the minimum rated pressure. 4. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from minimum or maximum rated pressure, at 25. Offset tability: Output deviation, after 1000 temperature cycles, -30 to 100, and 1.5 million pressure cycles, with minimum rated pressure applied. Tcpan: Output deviation over the temperature range of 10 to 60, relative to 25. TcOffset: Output deviation with minimum pressure applied, over the temperature range of 10 to 60, relative to Auto Zero at Factory Installation: Due to the sensitivity of the, external mechanical stresses and mounting position can affect the zero pressure output reading. To obtain the 5% F accuracy, the device output must be autozeroed'' after installation. Autozeroing is defined as storing the zero pressure output reading and subtracting this from the device's output during normal operations. 2 Freescale emiconductor
3 O-HIP TEPERATURE OPEATIO, ALIBRATIO, AD IAL ODITIOI The performance over temperature is achieved by from the factory. ontact the factory for information regarding integrating the shear-stress strain gauge, temperature media tolerance in your application. compensation, calibration and signal conditioning circuitry Figure 3 shows the recommended decoupling circuit for onto a single monolithic chip. interfacing the output of the integrated sensor to the A/D input Figure 2 illustrates the gauge configuration in the basic of a microprocessor or microcontroller. Proper decoupling of chip carrier (ase 482). A fluorosilicone gel isolates the die the power supply is recommended. surface and wire bonds from the environment, while allowing Figure 4 shows the sensor output signal relative to the pressure signal to be transmitted to the silicon diaphragm. pressure input. Typical, minimum and maximum output The series sensor operating characteristics curves are shown for operation over a temperature range of are based on use of dry air as pressure media. edia, other 10 to 60 using the decoupling circuit shown in Figure 3. than dry air, may have adverse effects on sensor The output will saturate outside of the specified pressure performance and long-term reliability. Internal reliability and range. qualification test for dry air, and other media, are available Fluorosilicone el Die oat Die tainless teel ap +5 V Wire Bond P1 Thermoplastic ase Vs Vout OUTPUT Lead Frame 1.0 µf IP 0.01 µf D 470 pf Differential ensing Element P2 Die Bond Figure 2. ross ectional Diagram OP (ot to cale) Figure 3. Recommended Power upply Decoupling and Output Filtering Recommendations (For additional output filtering, please refer to Application ote A1646.) Output (V) 5 Transfer Function: 4.5 V out = V *[(0.1533*P) ] ± 5% V F 4 V = 5.0 V ± 0.25 Vdc 3.5 TEP = 10 to 60 3 Typical ax in Differential Pressure (kpa) ee ote 5 in Operating haracteristics Figure 4. Output versus Pressure Differential Freescale emiconductor 3
4 PREURE (P1)/VAUU (P2) IDE IDETIFIATIO TABLE Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing silicone gel which isolates the die from the environment. The pressure sensor is Table 3. Pressure (P1)/Vacuum (P2) ide Identification Table designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the table below: Part umber ase Type Pressure (P1) ide Identifier 6U/T1 482 tainless teel ap 6U/T1 482A ide with Port Attached 7U 482B tainless teel ap 7U 482 ide with Port Attached P 1369 ide with Port Attached PXV4006DP 1351 ide with Part arking IIU REOEDED FOOTPRIT FOR URFAE OUTED APPLIATIO urface mount board layout is a critical portion of the total design. The footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct footprint, the packages will self align when subjected to a solder reflow process. It is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder pads TYP TYP 8X TYP 8X 2.54 inch mm Figure 5. OP Footprint (ase 482) 4 Freescale emiconductor
5 PAAE DIEIO -A- -B D 8 PL 0.25 (0.010) T B A OTE: 1. DIEIOI AD TOLERAI PER AI Y14.5, OTROLLI DIEIO: IH. 3. DIEIO A AD B DO OT ILUDE OLD PROTRUIO. 4. AXIU OLD PROTRUIO 0.15 (0.006). 5. ALL VERTIAL URFAE 5 TYPIAL DRAFT. PI 1 IDETIFIER H -T- EATI PLAE IHE ILLIETER DI I AX I AX A B D B 2.54 B H AE IUE O URFAE OUT -A- -B T- V 4 1 D 8 PL 0.25 (0.010) T B A W H OTE: 1. DIEIOI AD TOLERAI PER AI Y14.5, OTROLLI DIEIO: IH. 3. DIEIO A AD B DO OT ILUDE OLD PROTRUIO. 4. AXIU OLD PROTRUIO 0.15 (0.006). 5. ALL VERTIAL URFAE 5 TYPIAL DRAFT. IHE ILLIETER DI I AX I AX A B D B 2.54 B H V W PI 1 IDETIFIER EATI PLAE AE 482A-01 IUE A URFAE OUT Freescale emiconductor 5
6 PAAE DIEIO -A- -B T- 4 1 D 8 PL 0.25 (0.010) T B A PI 1 IDETIFIER DETAIL X DETAIL X EATI PLAE OTE: DIEIOI AD TOLERAI PER AI Y14.5, OTROLLI DIEIO: IH. DIEIO A AD B DO OT ILUDE OLD PROTRUIO. AXIU OLD PROTRUIO 0.15 (0.006). ALL VERTIAL URFAE 5 TYPIAL DRAFT. DIEIO TO ETER OF LEAD WHE FORED PARALLEL. DI A B D IHE ILLIETER I AX I AX B 2.54 B AE 482B-03 IUE B THROUH-HOLE -A- -B V PI 1 IDETIFIER W D 8 PL 0.25 (0.010) T B A DETAIL X OTE: DIEIOI AD TOLERAI PER AI Y14.5, OTROLLI DIEIO: IH. DIEIO A AD B DO OT ILUDE OLD PROTRUIO. AXIU OLD PROTRUIO 0.15 (0.006). ALL VERTIAL URFAE 5 TYPIAL DRAFT. DIEIO TO ETER OF LEAD WHE FORED PARALLEL. DI A B D V W IHE ILLIETER I AX I AX B 2.54 B DETAIL X -T- EATI PLAE AE IUE B THROUH-HOLE 6 Freescale emiconductor
7 PAAE DIEIO AE IUE A URFAE OUT PAE 1 OF 2 Freescale emiconductor 7
8 PAAE DIEIO AE IUE A URFAE OUT PAE 2 OF 2 8 Freescale emiconductor
9 PAAE DIEIO AE IUE B URFAE OUT PAE 1 OF 2 Freescale emiconductor 9
10 PAAE DIEIO AE IUE B URFAE OUT PAE 2 OF 2 10 Freescale emiconductor
11 How to Reach Us: Home Page: Web upport: UA/Europe or Locations ot Listed: Freescale emiconductor, Inc. Technical Information enter, EL East Elliot Road Tempe, Arizona or Europe, iddle East, and Africa: Freescale Halbleiter Deutschland mbh Technical Information enter chatzbogen uenchen, ermany (English) (English) (erman) (French) apan: Freescale emiconductor apan Ltd. Headquarters ARO Tower 15F 1-8-1, himo-eguro, eguro-ku, Tokyo apan or support.japan@freescale.com Asia/Pacific: Freescale emiconductor Hong ong Ltd. Technical Information enter 2 Dai ing treet Tai Po Industrial Estate Tai Po,.T., Hong ong support.asia@freescale.com For Literature Requests Only: Freescale emiconductor Literature Distribution enter P.O. Box 5405 Denver, olorado or Fax: LDForFreescaleemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale emiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale emiconductor reserves the right to make changes without further notice to any products herein. Freescale emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Freescale emiconductor does not convey any license under its patent rights nor the rights of others. Freescale emiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale emiconductor product could create a situation where personal injury or death may occur. hould Buyer purchase or use Freescale emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale emiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of Freescale emiconductor, Inc. All other product or service names are the property of their respective owners. Freescale emiconductor, Inc All rights reserved. Rev. 6 01/2007
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