Optoelektronické prvky. pre OKS
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1 Optoelektronické prvky pre OKS
2 Optoelektronické prvky pre OKS Zdroje žiarenia Fotodetektory Ostatné aktívne fotonické prvky: Modulátory Prepínače Vlnové konventory (meniče)
3 Optoelektronické prvky pre OKS Zdroje žiarenia (InGaAsP/InP, AlGaAs/GaAs) Luminiscenčné diódy - LED Laserové diódy DFB, DBR, VCSEL Fotodetektory (InGaAs/InP, Ge, Si,...) PIN fotodiódy Lavínové fotodiódy MSM fotodetektory
4 Zdroje žiarenia pre OKS Typy zdrojov žiarenia: Luminiscenčné diódy - LED Laserové diódy DFB, DBR, VCSEL Používané materiály: (InGaAsP/InP, AlGaAs/GaAs) Indirect bandgap InP GaAs 1-y P y x = 0.43 In 1-x Ga x As 1-y P y Al x Ga 1-x As In 0.49 Al x Ga 0.51-x P Red Infrared OKS 1.7 λ Free space wavelength coverage by different LED materials from the visible spectrum to the infrared including wavelengths used in optical communications. Hatched region and dashed lines are indirect E g materials.
5 Polovodičové LED a lasery pre OKS (a) (b) Electrons in CB E c E v 2 ev n AlGaAs p GaAs (~0.1 µm) 1.4 ev Holes in VB AlGaAs E c p 2 ev E c E v (a) A double heterostructure diode has two junctions which are between two different bandgap semiconductors (GaAs and AlGaAs). (b) Simplified energy band diagram under a large forward bias. Lasing recombination takes place in the p- GaAs layer, the active layer Refractive index (c) Photon density (d) Active region n ~ 5% (c) Higher bandgap materials have a lower refractive index (d) AlGaAs layers provide lateral optical confinement S.O. Kasap, Optoelectronics (Prentice Hall) Štruktúra LED resp. laserovej diódy s dvojitým heteroprechodom
6 Plošne emitujúca LED LED pre OKS Hranovo emitujúca LED Štruktúry LED pre OKS
7 Polovodičové lasery Stripe electrode Cleaved reflecting surface W L Ziskom vymedzená štruktúra (Gain Guided) Oxide insulator p-gaas (Contacting layer) p-al x Ga 1-x As (Confining layer) p-gaas (Active layer) n-al x Ga 1-x As (Confining layer) n-gaas (Substrate) Current paths Substrate Electrode Substrate Elliptical laser beam Cleaved reflecting surface Active region where J > J t h. (Emission region) Schematic illustration of the the structure of a double heterojunction stripe contact laser diode 1999 S.O. Kasap, Optoelectronics (Prentice Hall) Typická štruktúra hranovo emitujúcej laserovej diódy s DH
8 Polovodičové lasery Light power Laser diode 10 mw LED 5 mw 0 50 ma 100 ma Current Typical optical power output vs. forward current for a LED and a laser diode S.O. Kasap, Optoelectronics (Prentice Hall) LED a polovodičový laser porovnanie L-I charakteristík
9 Polovodičové lasery Optical Power Optical Power Laser Optical Power LED Stimulated emission λ λ Spontaneous emission Optical Power Laser 0 I th I λ Typical output optical power vs. diode current ( I) characteristics and the corresponding output spectrum of a laser diode S.O. Kasap, Optoelectronics (Prentice Hall) Spektrum žiarenia polovodičového lasera
10 Polovodičové lasery Loss Laser Cavity Gain Profile External Cavity Laser Output Jednomódový polovodičový laser princíp viazané rezonátory DFB, DBR ν ν ν
11 Polovodičové lasery DBR laser Distributed Bragg reflector A B Λ q(λ B /2n) = Λ (a) Active layer Corrugated dielectric structure (b) (a) Distributed Bragg reflection (DBR) laser principle. (b) Partially reflected waves at the corrugations can only constitute a reflected wave when the wavelength satisfies the Bragg condition. Reflected waves A and B interfere constructive when q(λ B /2n) = Λ S.O. Kasap, Optoelectronics (Prentice Hall)
12 Polovodičové lasery DFB laser Corrugated grating Λ Ideal lasing emission Optical power Guiding layer Active layer 0.1 nm (a) (b) λ B λ (c) λ (nm) (a) Distributed feedback (DFB) laser structure. (b) Ideal lasing emission output. (c) Typical output spectrum from a DFB laser S.O. Kasap, Optoelectronics (Prentice Hall)
13 Polovodičové lasery - VCSEL Contact λ/4n 2 Dielectric mirror λ/4n 1 Active layer Dielectric mirror Substrate Contact Surface emission A simplified schematic illustration of a vertical cavity surface emitting laser (VCSEL) S.O. Kasap, Optoelectronics (Prentice Hall) Povrchovo vyžarujúci polovodičový laser
14 Polovodičové lasery I(t) P(t) time Modulačná charakteristika LAD a časová odozva na budiaci prúdový impulz
15 Polovodičové lasery Vnútorná konštrukcia laserového modulu so stabilizáciou teploty a výkonu
16 Polovodičové lasery Čip hranovo emitujúcej laserovej diódy
17 Polovodičové lasery Preladiteľný DFB laser pre OKS
18 Polovodičové lasery Preladiteľný DBR laser pre OKS
19 Polovodičové lasery Preladiteľný povrchovo vyžarujúci polovodičový laser s vertikálnym rezonátorom (VCSEL)
20 Fotodetektory v OKS Úlohou fotodetektora v OKS je premena optického signálu (analógového alabo digitálneho) na elektrický s maximálnou účinnosťou a minimálnym skreslením. Fotodetektor môže výrazne ovplyvniť celkové parametre OKS, preto je možné výberom resp. vývojom kvalitných fotodetektorov zvýšiť prenosovú kapacitu, redukovať počet opakovačov a teda znížiť ako investičné tak aj prevádzkové náklady, a pod.
21 Fotodetektory v OKS Blokové schémy prijímačov pre OKS (OE časti) hv Fotodet. Nš.predzos. DP filt. Hl. zos. Demod. signál Analógový prijímač DC/DC AGC hv Fotodet. Nš predzos. DP filt. Hl. zos. Tvar.obv. signál DC/DC Digitálny prijímač AGC Extr.hod.
22 Fotodetektory v OKS Požiadavky na fotodetektory v OKS 1.Vysoká citlivosť pri pracovnej vlnovej dĺžke λ= 850,1300,1550 nm (výber polovodiča, kvantová účinnosť) 2. Vysoká rýchlosť prenosu (malá doba odozvy) resp. veľká šírka pásma Je určená prenosovou rýchlosťou (šírkou pásma) systému. 3. Minimálny šum Výstrelový šum, prídavný lavínový šum, kapacita. 4. Linearita Dôležitý parameter najmä pre analógové systémy. 5. Stabilita parametrov - v závislosti na teplote (šum, zisk-apd,...) - v závislosti na čase (stárnutie - voľba vhodných materiálov, pasivácia) 6. Vysoká spoľahlivosť Dnes už viac ako hodín. 7. Malé rozmery Možnosť účinnej väzby na optické vlákno, vhodné púzdrenie. 8. Nízke pracovné napätia Za vhodné možno považovať jednotky voltov, zložitejšie je napájanie lavínových fotodiód. 9. Nízka cena Hromadným zavádzaním OKS vo všeobecnosti ceny komponentov klesajú.
23 Fotodetektory v OKS Materiály pre fotodetektory v OKS Na výrobu fofodetektorov pre OKS možno použiť viaceré polovodiče ako napríklad Si, Ge, viaczložkové binárne, ternárne alebo kvaternárne polovodiče (najmä typu A3B5, čiastočne aj A2B6). Teoretické i praktické výsledky jednoznačne ukazujú, že pre I. generáciu OKS je najvhodnejším materiálom pre výrobu fotodetektorov Si a pre vyššie generácie ternár resp. kvaternár InGaAs(P) na podložkách InP, ktorý nahradil Ge.
24 Fotodetektory v OKS Dôvody použitia Si pre nm (1 generácia OKS): - vhodný na detekciu v tejto oblasti, - dobre zvládnutá technológia, - vysoká spoľahlivosť, - nízka cena.
25 Fotodetektory v OKS Dôvody požitia InGaAs(P)/InP pre 1300 a 1550 nm: - umožňuje výrobu fotodetektorov s parametrami lepšími ako Ge, - na báze InGaAsP/InP je možné vyrobiť zdroje aj detektory optického žiarenia, - na báze InP je už pomerne dobre zvládnutá výroba elektronických prvkov, - v heteroštruktúrach InGaAsP/InP je možné realizovať aj ďalšie optické a elektrooptické prvky, - tento systém umožňuje realizáciu monolitických OEIO.
26 Fotodetektory v OKS Typy fotodetektorov pre OKS - PIN fotodiódy - lavínové fotodiódy (APD) - MSM fotodetektory - fototranzistory (HBFT)
27 Fotodetektory v OKS Porovnanie PIN a lavínových fotodiód PIN fotodiódy - menej citlivé - menšie pracovné napätia - vyššia spoľahlivosť - vysoká rýchlosť - nižšia cena Lavínové fotodiódy - vyššia citlivosť - vyššie napájacie napätia (stabilizácia) - nižšia rýchlosť - vyššia cena
28 Fotodetektory v OKS MSM fotodetektory Štruktúra - kov-polovodič-kov - kompatibilná s FET-mi - jednoduchá možnosť monolitickej integrácie Citlivosť - nižšia ako u PIN fotodiód (0,3-0,4 A/W) Rýchlosť odozvy - rýchlejšie ako PIN fotodiódy (10-tky až 100-vky ps)
29 Fotodetektory v OKS Fototranzistory - štruktúra - citlivosť - rýchlosť odozvy heterobipolárne fototranzistory širokozónny emitor nevyvedená báza PNP typ vhodnejší zisk 10-tky až 100-vky pracovné napätie jednotky voltov zisk závisí od optického výkonu silne závisí od parametrov bázy širka pásma 100-vky MHz až GHz
30 Fotodetektory pre OKS RCE PIN fotodióda pre OKS realizovaná na KME FEI STU 0, nm RCE PIN 12/3 Photocurrent [ r.u. ] 0,4 0,2 enhancement 3 x 33 nm 0, Wavelength [ nm ]
31 Designed structure of SACM APD + 18 InP (p ~ 10 ) 600 nm - contact 15 InP (~ 10 ) 500 nm - multiplication 17 InP (n = 1,8x10 ) 150 nm - charge Fotodetektory pre OKS Lavínová fotodióda pre OKS realizovaná na KME FEI STU (MO CVD rast na ElÚ SAV) 15 In0,53Ga0,47As (~ 10 ) 2000 nm - absorption InP (n ~ 10 ) 100 nm - buffer InP <S> Reverse Current, I R [A] illum in ation dark avalan che gain Avalanche gain A p plied R e verse V o ltage, V R [V ]
32 Požiadavky na prvky v OKS Požiadavky na pasívne a aktívne prvky pre OKS Súčasný trend zvyšovanie parametrov kvality spoľahlivosti integrácia funkcií pri znižovaní ceny integrované fotonické bloky (subsystémy)
33 Aktívne prvky pre OKS integrácia funkcií DBR Laser + zosilňovač + modulátor
34 Aktívne prvky pre OKS PIN fotodetektor + vf koplanarne vedenie (zosilňovač)
35 Aktívne prvky pre OKS MESFET + MSM monolitický optoelektronický prijímač
36 Aktívne prvky pre OKS Optický prepínač
37 Aktívne prvky pre OKS Modulátor + vlnový konvertor
38 Aktívne prvky pre OKS Možnosti realizácie optického vlnového konvertora
39 Trendy ďalšieho rozvoja OKS V oblasti komponentov pre realizáciu moderných OKS: Lasery pracujuce bez chladenia MQW Superrýchle fotodetektory Preladiteľné lasery DWDM Optické prepínače (cross-connect), connect), smerovače (router) Vláknové zosilňovače pre nové vlnové pásma S,E a U V oblasti topológií a systémových riešení Postupné zavádzanie plneoptických komunikačných systémov
40 Otázky?
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