PY291A DESCRIPTION. Windowed devices for reprogramming. EPROM Technology for reprogramming. Fully TTL Compatible Inputs and Outputs

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1 2K x 8 reprogrammable prom FEATURES EPROM Technology for reprogramming High Speed 20/25/35/50 ns (Commercial) 25/35/50 ns (Industrial) 35/50 ns (Military) Low Power Operation: 660 mw Single 5±10% Power Supply Windowed devices for reprogramming Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) 24-Pin 300 mil DIP Windowed CERDIP Non-Windowed CERDIP Non-Windowed Plastic DIP DESCRIPTION The PY291A is a 2Kx8 CMOS PROM. The device is available in windowed packages which when exposed to U light, the memory content in the PROM is erased and can be reprogrammed. EPROM technology is used in the memory cells for programming. The EPROM requires a 12.5 for programming. Devices are tested to insure that performance of the device meets the DC and AC specification limits after customer programming. and CS 2 and CS 3 are HIGH. The memory contents in the address established by the Address pins (A 0 to A 10 ) will become available on the outputs (O 0 to O 7 ). The PY291A is available in 24-pin 300 mil Ceramic DIPs (CERDIP, Windowed and Non-Windowed) and Plastic DIPs (Non-Windowed). To perform a read operation from the device, CS 1 is LOW Functional Block Diagram Pin Configuration DIP (P4, D4, WD1) Note: Window on WD1 package only 1 Revised March 2010

2 Maximum Ratings (1) Symbol Parameter alue Unit Power Supply Pin with 0.5 to +7 Respect to GND Terminal oltage with 0.5 to TERM Respect to GND +0.5 (up to 7.0) Program oltage 13 Symbol Parameter alue Unit T A Operating Temperature 55 to +125 C T BIAS Temperature Under 55 to +125 C Bias T STG Storage Temperature 65 to +150 C P T Power Dissipation 1.0 W I OUT DC Output Current 50 ma RECOMMENDED OPERATING CONDITIONS CAPACITANCES (4) Grade (2) Ambient Temp Gnd cc Commercial 0 C to +70 C ±10% Industrial -40 C to +85 C ±10% Military -55 C to +125 C ±10% ( = 5.0, T A = 25 C, f = 1.0MHz) Symbol Parameter Conditions Typ. Unit C IN Input Capacitance IN = 0 10 pf C OUT Output Capacitance OUT = 0 10 pf DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage (2) Symbol IH IL HC LC OL Parameter Input High oltage Input Low oltage CMOS Input High oltage CMOS Input Low oltage Output Low oltage (TTL Load) Test Conditions I OL = +16 ma, = Min. PY291A Min Max (3) (3) Unit OH I LI I LO Output Leakage Current = Max., CE = IH, OUT = GND to µa Programming Supply oltage I PP Output High oltage (TTL Load) I OH = 4 ma, = Min. 2.4 Input Leakage Current = Max. IN = GND to µa Programming Supply Current 50 ma Input HIGH Programming oltage 3.0 ILP Input LOW Programming oltage 0.4 POWER DISSIPATION CHARACTERISTICS S. SPEED Symbol Parameter Temperature Range I CC Commercial Dynamic Operating Current* Industrial Military N/A N/A 25 N/A Unit ma ma ma Page 2 of 9

3 AC ELECTRICAL CHARACTERISTICS READ CYCLE ( = 5 ± 10%, All Temperature Ranges) (2) Symbol Parameter Min Max Min Max Min Max Min Max t AA Address to Output alid ns t HZCS1 Chip Select Inactive to High Z ns t ACS1 Chip Select Active to Output alid ns t HZCS2 Chip Select Inactive to High Z ns t ACS2 Chip Select Active to Output alid ns t PU Chip Select Active to Power-Up ns t PD Chip Slect Inactive to Power-Down ns Unit TIMING WAEFORM OF Read Cycle Notes: 1. Stresses greater than those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Maximum rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with IL and I IL not more negative than 3.0 and 100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. Page 3 of 9

4 DEICE ERASURE If the device is subjected to wavelengths of light below 4000 Angstroms, device erasure will commence. It is therefore recommended to use an opaque label over the window in the event the device will be exposed to lighting for a long time. The U dose for erasure requires a wavelength of 2,537 Angstroms for a minimum dose of 25 Wsec/cm 2. If using a U lamp of 12 mw/cm 2, the exposure time is estimated to be 35 minutes. Devices should be positioned within 1 inch of the lamp during the erasure process. Permanent damage can occur to the devices if exposed to U light for an extended period of time. MODE SELECTION Pin Function Mode Read or Output Disable A 10 CS 3 CS 2 CS 1 O 7 -O 0 Other A 10 PGM FY D 7 -D 0 Read A 10 IH IH IL O 7 -O 0 Output Disable A 10 X X IH High Z Output Disable A 10 X IL X High Z Output Disable A 10 IL X X High Z Program A 10 ILP D 7 -D 0 Program erify A 10 ILP O 7 -O 0 Program Inhibit A 10 High Z Intelligent Program A 10 ILP D 7 -D 0 Blank Check Zeros A 10 ILP Zeros X = Don't Care PROGRAMMING PINOUTS Page 4 of 9

5 AC Test Conditions Input Pulse Levels GND to 3.0 Input Rise and Fall Times 3ns Input Timing Reference Level 1.5 Output Timing Reference Level 1.5 Output Load See Figures 1 and 2 * including scope and test fixture. Figure 1. Output Load Note: Because of the ultra-high speed of the PY291A, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause Figure 2. Thevenin Equivalent supply bounce must be avoided by bringing the and ground planes directly up to the contactor fingers. A 0.01 µf high frequency capacitor is also required between and ground. Page 5 of 9

6 Ordering Information Page 6 of 9

7 Pkg # D4 # Pins 24 (300 mil) Symbol Min Max A b b C D E ea BSC e BSC L Q S α 0 15 CERAMIC DUAL IN-LINE PACKAGE (NON-WINDOWED) Pkg # WD1 # Pins 24 (300 mil) Symbol Min Max A b b C D E ea BSC e BSC L Q S α 0 15 WD CERAMIC DUAL IN-LINE PACKAGE (WINDOWED) Page 7 of 9

8 Pkg # P4 # Pins 24 (300 Mil) Symbol Min Max A A b b C D E E e BSC eb L α 0 15 PLASTIC DUAL IN-LINE PACKAGE Page 8 of 9

9 REISIONS DOCUMENT NUMBER DOCUMENT TITLE EPROM101 PY291A 2K x 8 REPROGRAMMABLE PROM RE ISSUE DATE ORIGINATOR DESCRIPTION OF CHANGE OR Jun-2007 JDB New Data Sheet 01 Mar-2010 JDB Added Industrial Temperature Range Page 9 of 9

P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM

P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM HIGH SPEED 3K x 8 3.3 STATIC CMOS RAM FEATURES 3.3 Power Supply High Speed (Equal Access and Cycle Times) 1///5 (Commercial) //5 (Industrial) Low Power Single 3.3 olts ±.3olts Power Supply Easy Memory