S-2812A/2817A. Rev.1.1. CMOS 16K-bit PARALLEL E 2 PROM
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1 Rev.1.1 CMOS 16K-bit PARALLEL E 2 PROM The S-2812A and the S-2817A are low power 2K 8-bit parallel E 2 PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32- byte page write function, they can perform fast programming operation. Features Access time: 15 ns (V CC =5 V±1%, Ta= C to 7 C) Low power consumption Operating: 3 ma max. (V CC =5 V±1%) Standby: 1 µa max. (V CC =5 V±1%) Operating voltage range S-2812A S-2817A Read: 1.8 to 5.5 V 5 V±1% Write: 2.7 to 5.5 V 5 V±1% Write inhibition S-2812A: 2.1 V typ. S-2817A: 3.5 V typ. Data poliing With Ready/Busy pin Page write for 32 bytes Rewritings: 1 5 times Data retention: 1 years Program noise immunity Package: 28-pin DIP/SOP/TSOP Supply in bare chip is also available Pin Assignment 28-pin DIP/SOP Top view R/B NC A 7 A 6 A 5 A 4 A 3 A 2 A 1 A I/O I/O 1 I/O 2 GND V CC WE NC A 8 A 9 NC OE A 1 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 Pin name Function A to A 1 Address input I/O to I/O 7 Data input / output CE Chip Enable OE Output Enable WE Write Enable R/B Ready/Busy (opendrain output) V CC Power supply voltage GND Ground ( V) 28-pin TSOP Top view OE NC A 9 A 8 NC WE V CC R/B NC A 7 A 6 A 5 A 4 A A 1 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 GND I/O 2 I/O 1 I/O A A 1 A 2 Figure 1 Seiko Instruments Inc. 1
2 Block Diagram A 5 to A 1 V CC Address buffer & Latch Write protection Row decoder High voltage generator 16,384-bit E 2 PROM Memory array CE OE WE R/B Control logic Timer Data polling 32-byte Page register I / O buffer A to A 4 Address buffer & Latch Column decoder V CC GND I / O to I / O 7 Figure 2 Operation Mode Table 1 Absolute Maximum Ratings Mode CE OE WE I/O Read L L H Data output Write L H L Data input Write inhibition H L Standby H High-Z Table 2 :Don t care Parameter Symbol Ratings Unit Power supply voltage V CC -.3 to +7. V Input voltage V IN -.3 to V CC +.3 V Output voltage V OUT -.3 to V CC V Storage temperature T bias -5 to +95 C under bias Storage temperature T stg -65 to +15 C Recommended Operating Conditions Table 3 Parameter Symbol Conditions Min. Typ. Max. Unit Power supply voltage V CC S-2812A Read V Write V S-2817A V High level input voltage V IH V CC =2.7 to 5.5 V 2.2 V CC +.3 V V CC =1.8 to 2.7 V.8 V CC V CC +.3 V Low level input voltage V IL V CC =5 V ±1% V V CC =2.7 to 4.5 V V V CC =1.8 to 2.7 V V CC V Operating temperature T opr -4 C 2 Seiko Instruments Inc.
3 DC Electrical Characteristics 1. S-2812A CMOS 16K-bit PARALLEL E 2 PROM Parameter Symbol Conditions 5 V±1% 3 V±1% Unit Current consumption (Read) Current consumption (Program) I CC1 Table 4 (Ta=-4 C to C) Min. Typ. Max. Min. Typ. Max. CE V IL, V IN V IL or V IN V IH 3 15 ma I OUT = ma, f=1/t RC I CC2 CE.2 V, V IN.2 V or V IN V CC -.2 V 25 1 ma I OUT = ma, f=1/t RC I CC3 CE V IL, V IN V IL or V IN V IH 3 15 ma I CC4 CE.2 V, V IN.2 V or V IN V CC -.2 V 25 1 ma Standby current I SB1 CE V IH 1.5 ma I SB2 CE V CC -.2 V µa Input leakage current I LI V IN =GND to V CC µa Output leakage current I LO V I/O =GND to V CC µa High level output V OH 5-V operation: I OH =-4 µa voltage 3-V operation: I OH =-1 µa V Low level output voltage V OL 5-V operation: I OL =2.1 ma 3-V operation: I OL =4 µa.4.4 V 2. S-2817A Table 5 (Ta=-4 C to C, V CC =5 V±1%) Parameter Symbol Conditions Min. Typ. Max. Unit Current consumption (Read) Current consumption (Program) I CC1 CE V IL, V IN V IL or V IN V IH I OUT = ma, f=1/t RC 3 ma I CC2 CE.2 V, V IN.2 V or V IN V CC -.2 V I OUT = ma, f=1/t RC 25 ma I CC3 CE V IL, V IN V IL or V IN V IH 3 ma I CC4 CE.2 V, V IN.2 V or V IN V CC -.2 V 25 ma Standby current I SB1 CE V IH 1 ma I SB2 CE V CC -.2 V 1. µa Input leakage current I LI V IN =GND to V CC 1. µa Output leakage current I LO V I/O =GND to V CC 1. µa High level output V OH IOH =-4 µa 2.4 voltage V Low level output voltage V OL IOL =2.1 ma.4 V Rewriting Times Table 6 Parameter Symbol Min. Typ. Max. Unit Rewriting times N W 1 5 times/byte Pin Capacitance Table 7 Parameter Symbol Conditions Min. Typ. Max. Unit Input capacitance C IN V IN = V 1 pf Input / output C I/O V I/O = V 1 pf capacitance Seiko Instruments Inc. 3
4 AC Electrical Characteristics Table 8 Measuring conditions Parameter S-2812A S-2817A Input pulse levels V IL =.2 V V IH =2.4 V V IL =.4 V V IH =2.4 V Input rise and fall time 1 ns 1 ns I/O reference level 1.5 V 1.5 V Output load See Figure 3 See Figure 3 D OUT 1 pf * V CC 1.8 kω 99 * (When measuring t CLZ, t OLZ, t CHZ, t OHZ, t WHZ, t WLZ ) : 5pF Figure 3 Output load measuring circuit 1. Read Cycle (1) 5-V operation Table 9 (V CC =5 V±1%) Parameter Symbol C to 7 C -4 C to C Unit Min. Max. Min. Max. Read cycle time t RC 15 2 ns CE access time t CE 15 2 ns Address access time t AA 15 2 ns OE access time t OE 7 9 ns Output enable time (CE) t CLZ 1 1 ns Output enable time (OE) t OLZ 1 1 ns Output disable time (CE) t CHZ ns Output disable time (OE) t OHZ ns Output data hold time t OH 5 5 ns (2) 3-V operation (S-2812A only) Table 1 Parameter Symbol C to 7 C -4 C to C Unit Min. Max. Min. Max. (V CC =3 V±1%) Read cycle time t RC 4 5 ns CE access time t CE 4 5 ns Address access time t AA 4 5 ns OE access time t OE 2 25 ns Output enable time (CE) t CLZ 25 3 ns Output enable time (OE) t OLZ 25 3 ns Output disable time (CE) t CHZ ns Output disable time (OE) t OHZ ns Output data hold time t OH 1 15 ns 4 Seiko Instruments Inc.
5 2. Write Cycle (1) 5-V operation Table 11 Parameter Symbol C to 7 C -4 C to C Unit Min. Max. Min. Max. (V CC =5 V±1%) Write cycle time t WC 1 1 ms Address setup time t AS ns Address hold time t AH ns Write setup time t CS ns Write hold time t CH ns CE pulse width t CW ns OE setup time t OES 15 2 ns OE hold time t OEH 15 2 ns WE pulse width t WP ns Data setup time t DS 1 ns Data hold time t DH ns Page load time t PL µs (page data setting time) Page load time t PDL 1 1 µs (page data write start time) Time to device busy t DB ns (2) 3-V operation (S-2812A only) Table 12 (V CC =3 V±1%) Parameter Symbol C to 7 C -4 C to C Unit Min. Max. Min. Max. Write cycle time t WC 1 1 ms Address setup time t AS ns Address hold time t AH 3 35 ns Write setup time t CS ns Write hold time t CH ns CE pulse width t CW 3 35 ns OE setup time t OES 3 35 ns OE hold time t OEH 3 35 ns WE pulse width t WP 3 35 ns Data setup time t DS ns Data hold time t DH ns Page load time t PL µs (page data setting time) Page load time t PDL 1 1 µs (page data write start time) Time to device busy t DB 25 3 ns Seiko Instruments Inc. 5
6 t RC Address t CE CE t OE OE WE Data output V IH t CLZ t OLZ Valid data t OH t OHZ t CHZ Valid data t AA Figure 4 Read cycle t WC Address CE t AS t CS t AH t CH OE t OES t OEH t WP WE Data input Valid data t DS t DH R/B Hi-Z t DB Figure 5 WE controlled write cycle 6 Seiko Instruments Inc.
7 Address t WC t AS t AH CE t CW OE t OES toeh WE t CS t CH Data input Valid data R/B Hi-Z t DS t DH t DB Figure 6 CE controlled write cycle A to A 4 A 5 to A 1 CE OE t WP t PL t PDL WE Data input LAST BYTE BYTE BYTE1 BYTEn BYTEn+1 BYTEn+2 t WC R/B Hi-Z Figure 7 Page write cycle Seiko Instruments Inc. 7
8 Operation (1) Read mode This mode outputs data to I/O to I/O 7 when both CE and OE are low and when WE is high. The data bus is high impedance when either CE or OE is high. (2) Byte write mode A byte write cycle starts when both CE and WE are low and OE is high. CE- and WE-controlled write cycles are available. The address is latched at the falling of CE or WE whichever occurs last, and the data is latched at the rising of CE or WE whichever occurs first. (3) Page write mode In this mode, 1 page program operation of 32 bytes is completed in 1 ms, and all memory area is written within a second because the device organization is 64-page 32-byte. When starting this mode, first, addresses A 5 to A 1 assign the page, then A to A 4 assign the address to each byte within the page sequencially or at random. Less than 32 bytes of program is available. This address assignment is performed while.3 µs t PL 3 µs, and the program operation starts when t PDL 1 µs. (4) Data polling This function is to output the complement data written last on I/O 7 and to output low to I/O to I/O 6. This operation is performed by read operation during write cycle. R/B outputs low during write cycle; it is in high impedance in other modes. (5) Erase all mode All data is erased when OE is 13 V and both CE and WE are low. During erase all mode, A to A 1 and I/O to I/O 7 must be fixed to either high or low. CE 1 ns min. 1 ns min. OE 13 V 1 µs min. 1 ms min. 1 µs min. WE Address I/O Figure 8 (6) Write inhibition Write operation is inhibited in the following cases : When power supply voltage is under write inhibit voltage (V WI ). S-2817A : V WI =3.5 V typ. S-2812A : V WI =2.1 V typ. When OE is low, or WE is high. (7) Program noise immunity CE, OE and WE are noise protected for preventing erroneous write operation at power on and off. Less than 2 ns write pulse will not activate a write cycle at 5-V opeation, and less than 5 ns at 3-V operation. See Figure 9. 8 Seiko Instruments Inc.
9 CE, WE V CC GND OE V CC GND At 5 V operation : 2 ns At 3 V operation : 5 ns Figure 9 Seiko Instruments Inc. 9
10 Ordering Information S-281XA XX - XXX Access time 15 : 15 ns (5 V±1%, C to 7 C) Package DP : DIP FE : SOP TF : TSOP CA : Bare chip Product name S-2812A : 1.8 V to 5.5 V (Read) : 2.7 V to 5.5 V (Write) S-2817A : 5 V±1% Note: Each bit is set to 1 before delivery (except bare chip) 1 Seiko Instruments Inc.
11 Characteristics 1. DC characteristics 1.1 Current consumption (READ) I CC1-3 t RC =15 ns DATA=AA/55 I CC Current consumption (READ) I CC1-3 V CC =3.3 V t RC =4 ns DATA=AA/55 I CC Current consumption (READ) I 1.3 Current consumption (READ) I CC1 - Power supply voltage V CC CC1 - Read cycle time t RC 3 Ta=25 C t RC =4 ns DATA=AA/55 3 Ta=25 C DATA=AA/ I CC1 I CC V CC (V) t RC 1.5 Current consumption (READ) I CC2-3 t RC =15 ns DATA=AA/55 I CC Current consumption (READ) I CC2-3 V CC =3.3 V t RC =4 ns DATA=AA/55 I CC Current consumption (READ) I 1.7 Current consumption (READ) I CC2 - Power supply voltage V CC CC2 - Read cycle time t RC 3 Ta=25 C t RC =4 ns DATA=AA/55 3 Ta=25 C DATA=AA/ I CC2 1 I CC V CC (V) t RC Seiko Instruments Inc. 11
12 1.9 Current consumption (PROGRAM) I CC3-3 Page write mode DATA ALL I CC Current consumption (PROGRAM) I CC3-3 V CC =3.3 V Page write mode DATA ALL I CC Current consumption (PROGRAM) I CC3 - Power Supply Voltage V CC 3 Ta=25 C Page write mode DATA ALL I CC Current consumption (PROGRAM) I CC3-3 Erase all mode I CC V CC (V) 1.13 Current consumption (PROGRAM) I CC4-3 Page write mode DATA ALL I CC Current consumption (PROGRAM) I CC4-3 V CC =3.3 V Page write mode DATA ALL I CC Current consumption (PROGRAM) I CC Current consumption (PROGRAM) I CC4 - Power Supply Voltage V CC 3 3 Ta=25 C Page write mode Erase all mode DATA ALL 2 2 I CC4 I CC V CC (V) Seiko Instruments Inc.
13 1.17 Standby current I SB Standby current I SB1-6 V CC =3.3 V I SB1 (µa) 4 2 I SB1 (µa) Standby current I SB Standby current I SB V CC =3.3 V I SB2 (A) I SB2 (A) Input leakage current I LI A = V I LI (µa) Input leakage current I LI A =5.5 V I LI (µa) Output leakage current I LO I/O = V I LO (µa) Output leakage current I LO I/O =5.5 V I LO (µa) Seiko Instruments Inc. 13
14 1.25 High level output voltage V OH V CC =4.5 V I OH =-4 µa 1.26 High level output voltage V OH V CC =2.7 V I OH =-1 µa 4.4 V OH (V) V OH (V) Low level output voltage V OL -.4 V CC =4.5 V I OL =2.1 ma Low level output voltage V OL -.4 V CC =2.7 V I OL =4 µa.3.2 V OL (V).1.2 V OL (V) High level input voltage V IH - 3 V CC =5.6 V 2 V IH (V) Low level input voltage V IL - 3 V CC =4.4 V 1.31 Low level input voltage V IL - 3 V CC =2.6 V 2 2 V IL (V) V IL (V) Seiko Instruments Inc. -4
15 2. AC characteristics 2.1 Write cycle time t WC Write cycle time t WC V CC =5. V V CC =3. V 8 8 t WC (ms) 6 t WC (ms) Write cycle time t WC - Power supply voltage V CC 1 Ta=25 C t WC (ms) V CC (V) 2.4 Address access time t AA - 4 V CC =4.4 V Address access time t AA - 4 V CC =2.6 V 3 2 t AA 1 2 t AA CE access time t CE - 4 V CC =4.4 V CE access time t CE - 4 V CC =2.6 V 3 2 t CE 1 2 t CE Seiko Instruments Inc. 15
16 2.8 OE access time t OE - 2 V CC =4.4 V OE access time t OE - 2 V CC =2.6 V 15 1 t OE 5 1 t OE Address setup time t AS - 5 V CC =5.7 V t AS Address hold time t AH - 2 V CC =4.5 V Address hold time t AH - 2 V CC =2.7 V 15 1 t AH 5 1 t AH Data setup time t DS - 2 V CC =4.5 V Data setup time t DS - 2 V CC =2.7 V 15 1 t DS 5 1 t DS Seiko Instruments Inc.
17 2.15 Data hold time t DH - 5 V CC =5.7 V t DH Seiko Instruments Inc. 17
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21 The information herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or other diagrams described herein whose industrial properties, patents or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee any mass-production design. When the products described herein include Strategic Products (or Service) subject to regulations, they should not be exported without authorization from the appropriate governmental authorities. The products described herein cannot be used as part of any device or equipment which influences the human body, such as physical exercise equipment, medical equipment, security system, gas equipment, vehicle or airplane, without prior written permission of Seiko Instruments Inc.
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 64K 8K x 8 Bit 5 Volt, Byte Alterable E 2 PROM FEATURES 150ns Access Time
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Features Fast Read Access Time - 150 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor
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Features Fast Read Access Time 90 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum
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79LV24B 2 Megabit (512K x 4-Bit) Low Low Voltage EEPROM MCM FEATURES: 512k x 4-bit EEPROM MCM RAD-PAK radiation-hardened agait natural space radiation Total dose hardness: - >1 krad (Si) - Dependent upon
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Features Single-voltage Operation 3V Read 3.1V Programming Fast Read Access Time 55 ns Internal Program Control and Timer 8K Word Boot Block with Lockout Fast Erase Cycle Time 10 seconds Word-by-Word Programming
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12Kx32 EEPROM MODULE, SMD 5962-9455 FEATURES Access Times of 120**, 140, 150, 200, 250, 300ns Packaging: 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic Ceramic HIP (Package 400) 6 lead, 22.4mm sq.
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Features Single-voltage Operation 5V Read 5V Reprogramming Fast Read Access Time 55 ns Internal Program Control and Timer 16-Kbyte Boot Block with Lockout Fast Erase Cycle Time 10 seconds Byte-by-byte
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Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time
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Description The ACE24AC02A1 is 2048 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 256 words of 8 bits (1 byte) each. The devices
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Description The ACE24AC64 series are 65,536 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 8192 words of 8 bits (one byte) each. The
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Features Fast Read Access Time 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option)
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More information64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection AT28HC64BF
Features Fast Read Access Time 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Fast Write Cycle Times Page Write Cycle Time: 2 ms Maximum (Standard) 1 to 64-byte Page
More informationFremont Micro Devices, Inc.
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Description The ACE24AC16B is 16,384 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 2,048 words of 8 bits (1 byte) each. The devices
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FINAL Am27C64 64 Kilobit (8 K x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time Speed options as fast as 45 ns Low power consumption 20 µa typical CMOS standby current JEDEC-approved pinout
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512 Kbit (64K x8) Page-Write EEPROM FEATURES: 512Kb (x8) Page-Write, Small-Sector flash memories Single Voltage Read and Write Operations 4.5-5.5V for Superior Reliability Endurance: 100,000 Cycles (typical)
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Features Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time
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Revision History Rev. No. History Issue Date 1.0 1. New Release. 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down (DPD) 3-2. Partial
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Features Single Voltage Operation 5V Read 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-By-Byte
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AT28C256 Features Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms
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64 k SRAM (8-kword 8-bit) ADE-203-454B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword 8-bit. It realizes higher performance and low power consumption by
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More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 16,384-BIT EPROM WITH I/O! 2048 Words x 8 Bits! Single + 5V Power Supply
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