Micro power Unipolar Hall Effect Switch

Transcription

1 Micro power Unipolar Hall Effect Switch HAL2 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. HAL2is special made for low operation voltage, 1.V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of unipolar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits CMOS Hall Effect IC Totem pole output Omni polar output switch Micro power consumption Low working voltage at 1.V High ESD protection Applications Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter PDA PDVD NB Pad PC

2 HAL2 Functional Diagram Awake/Sleep Timing Control Offset Cancellation Control Logic Amp Out Hall Sensor Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage protection, a 100Ω resistor in series with is recommended. HAL2, HBM > ±4KV which is verified by third party lab. Absolute Maximum Ratings At(Ta=2 ) Characteristics Values Unit Supply voltage,() V Output Voltage,(Vout) V -0. V Unlimited Gauss 1 ma Operating temperature range, (Ta) -40 to +8 Storage temperature range, (Ts) -6 to +10 Maximum Junction Temp,(Tj) 10 (θja) ST / SP / UA 10 / 62/ 206 /W (θjc) ST / SP / UA 22 / 11/ 148 /W 400 / 200/ 606 mw Reverse Voltage, () (VOUT) Magnetic flux density Output current,(iout) Thermal Resistance Package Power Dissipation, (PD) ST / SP Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability.

3 Electrical Specifications DC Operating Parameters:Ta=2, =2.0V Parameters Test Conditions Min Typ Max Units Supply Voltage,() Operating 1.. Volts Awake State 1.4 ma Supply Current,(IDD) Sleep State. μa Average 10 μa Output Leakage Current,(Ioff) Output off 1 ua Output High Voltage,(VOH) IOUT=0.mA(Source) -0.2 V Output Low Voltage,(VOL) IOUT=0.mA(Sink) 0.2 V Awake mode time,(taw) Operating us Sleep mode time,(tsl) Operating ms Duty Cycle,(D,C) 0.1 % Electro-Static Discharge HBM 4 KV Typical application circuit C1:10nF HAL2 C2:100pF

4 HAL2EST/SP/UA Magnetic Specifications DC Operating Parameters:Ta=2, =2.0V Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point B OP N pole to branded side, B > BOP, Vout On 0 0 Gauss Release Point B RP N pole to branded side, B < BRP, Vout Off Gauss Hysteresis B HY BOPx - BRPx 10 Gauss HAL2EST/SP/UA Output Behavior versus Magnetic Polar DC Operating Parameters:Ta = -40 to 8, =1. to.v Parameter Test condition OUT(ST) Parameter Test condition Null or weak magnetic field B=0 or B < BRP High Null or weak magnetic field OUT(SP/U A) B=0 or B < BRP High North pole B<Bop[(-0)~(-10)] Low South pole B>Bop(0~10) Low UA Package ST Package SP Package Performance Graph Typical Supply Voltage() Versus Leakage Current(IOFF) Output Leakage Current(uA)

5 Performance Graph Typical Supply Voltage() Versus Flux Density 4 Flux Density(Gauss) 2 1 Bop-S Brp-S Typical Temperature(TA) Versus Supply Current(IDD) 1 Current consumption 1 11 Awake current(ua) sleep current(ma) 9 Average current(ua) Temperature( ) Typical Supply Voltage() Versus Output Voltage(VDSON) 20.0 Flux Density(Gauss) Typical Temperature(TA) Versus Flux Density Bop-S Brp-S Temperature( ) Typical Supply Voltage() Versus Supply current current(idd) 1 Current consumption 1 Awake current(ua) 11 sleep current(ma) Average current(ua) Typical Temperature(TA) Versus Output Voltage(VDSON) 20.0 Output Saturation Voltage (mv) Output Saturation Voltage (mv) Temperature( )

6 Sensor Location, package dimension and marking HAL2 Package ST Package (TSOT-2) (Top View) Hall Plate Chip Location (Bottom view) 1 2 NOTES: 1. PINOUT (See Top View at left:) Pin 1 Pin 2 Pin Output 2. Controlling dimension: mm; SP Package(PSOT-2) (Top View) Hall Plate Chip Location (Bottom view) 1 2 NOTES: 1. PINOUT (See Top View at left:) Pin 1 Pin 2 Pin Output 2. Controlling dimension: mm;

7 UA Package Hall Chip location Hall Sensor Location Mark NOTES: 1).Controlling dimension: mm Output Pin Assignment 2).Leads must be free of flash (Top view) and plating voids ).Do not bend leads within 1 mm of lead to package interface. 4).PINOUT: Pin 1 Pin 2 Pin Output HAL2 UA(TO-92S) Package Date Code X X X Year Week EX:2016 Year_8 Week 608