6 Channel EMI Filter Array with ESD Protection
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1 6 Channel EMI Filter Array with ESD Protection Features Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C) network Greater than 32dB attenuation at 1GHz +15kV ESD protection on each channel (IEC Level 4, contact discharge) +30kV ESD protection on each channel (HBM) Chip Scale Package features extremely low lead inductance for optimum filter and ESD performance 15-bump, 2.960mm X 1.330mm footprint Chip Scale Package (CSP) Lead-free version available Applications EMI filtering and ESD protection for both data and I/O ports Wireless Handsets Handheld PCs / PDAs MP3 Players Notebooks Desktop PCs Product Description The is a six channel low-pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the integrates a pi-style filter (C-R-C) for each of the 6 channels. Each high quality filter provides greater than 30dB attenuation in the MHz range. These pi-style filters also support bidirectional filtering, controlling EMI both to and from a data port connector. In addition, the provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The input pins are designed and characterized to safely dissipate ESD strikes of 15kV, exceeding the maximum requirement of the IEC international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than 30kV. The is particularly well suited for portable electronics (e.g., cellular telephones, PDAs, notebook computers) because of its small package footprint and low weight. The is available in a space-saving, low-profile Chip Scale Package with optional lead-free finishing. Electrical Schematic FILTERn* 100Ω FILTERn* 30pF 30pF GND (Pins B1-B3) 1 of 6 EMI/RFI + ESD Channels * See Package/Pinout Diagram for expanded pin information. 10/10/ N. McCarthy Blvd., Milpitas, CA Tel: Fax:
2 PACKAGE / PINOUT DIAGRAMS Orientation Marking (see note 2) A B C 1 TOP VIEW (Bumps Down View) A Orientation Marking BOTTOM VIEW (Bumps Up View) FILTER1 FILTER2 FILTER3 FILTER4 FILTER5 FILTER6 C1 C2 C3 C4 C5 C6 GND GND GND B1 B2 B3 FILTER1 FILTER2 FILTER3 FILTER4 FILTER5 FILTER6 A1 A2 A3 A4 A5 A6 A1 CSP Package Notes: 1) These drawings are not to scale. 2) Lead-free devices are specified by using a "+" character for the top side orientation mark. PIN(s) NAME DESCRIPTION A1 FILTER1 Filter Channel 1 A2 FILTER2 Filter Channel 2 A3 FILTER3 Filter Channel 3 A4 FILTER4 Filter Channel 4 A5 FILTER5 Filter Channel 5 A6 FILTER6 Filter Channel 6 B1-B3 GND Device Ground C1 FILTER1 Filter Channel 1 C2 FILTER2 Filter Channel 2 C3 FILTER3 Filter Channel 3 C4 FILTER4 Filter Channel 4 C5 FILTER5 Filter Channel 5 C6 FILTER6 Filter Channel 6 Ordering Information Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Note 2: Lead-free devices are specified by using a "+" character for the top side orientation mark. PIN DESCRIPTIONS PART NUMBERING INFORMATION Standard Finish Lead-free Finish 2 Ordering Part Ordering Part Bumps Package Number 1 Part Marking Number 1 Part Marking 15 CSP 306A G 306A N. McCarthy Blvd., Milpitas, CA Tel: Fax: /10/03
3 Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 C DC Power per Resistor 100 mw DC Package Power Rating 600 mw STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 C ELECTRICAL OPERATING CHARACTERISTICS 1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance Ω C Capacitance At 2.5V DC pf TCR Temperature Coefficient of Resistance 1200 ppm/ C TCC Temperature Coefficient of Capacitance At 2.5V DC -300 ppm/ C V DIODE Diode Voltage (reverse bias) I DIODE =10µA 5.5 V I LEAK Diode Leakage Current (reverse bias) V DIODE =3.3V 100 na V SIG V ESD V CL f C Signal Voltage Positive Clamp Negative Clamp In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC Level 4 Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Cut-off frequency Z SOURCE = 50Ω, Z LOAD = 50Ω I LOAD = 10mA Notes 2,4 and 5 Notes 2,3,4 and 5 Note 1: T A =25 C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. Note 4: Unused pins are left open Note 5: These parameters are guaranteed by design and characterization ±30 ± R = 100Ω, C = 30pF 58 MHz V V kv kv V V 10/10/ N. McCarthy Blvd., Milpitas, CA Tel: Fax:
4 Performance Information Typical Filter Performance (T A =25 C, DC Bias=0V, 50 Ohm Environment) Figure 1. Insertion Loss VS. Frequency (A1-C1 to GND B2) Figure 2. Insertion Loss VS. Frequency (A2-C2 to GND B2) N. McCarthy Blvd., Milpitas, CA Tel: Fax: /10/03
5 Performance Information (cont d) Typical Filter Performance (T A =25 C, DC Bias=0V, 50 Ohm Environment) Figure 3. Insertion Loss VS. Frequency (A3-C3 to GND B2) Figure 4. Insertion Loss VS. Frequency (A4-C4 to GND B2) 10/10/ N. McCarthy Blvd., Milpitas, CA Tel: Fax:
6 Performance Information (cont d) Typical Filter Performance (T A =25 C, DC Bias=0V, 50 Ohm Environment) Figure 5. Insertion Loss VS. Frequency (A5-C5 to GND B2) Figure 6. Insertion Loss VS. Frequency (A6-C6 to GND B2) N. McCarthy Blvd., Milpitas, CA Tel: Fax: /10/03
7 Performance Information (cont d) Typical Filter Performance (T A =25 C, DC Bias=0V, 50 Ohm Environment) Figure 7. Comparison of Filter Response Curves for VS. DC Bias 10/10/ N. McCarthy Blvd., Milpitas, CA Tel: Fax:
8 Performance Information (cont d) Normalized Capacitance T = -40C T = +25C T = +70C DC Input Voltage (V) Figure 8. Filter Capacitance vs. Input Voltage over Temperature (normalized to capacitance at 2.5VDC and 25 C) Nornalized Resistance Temperature ['C] Figure 9. Resistance vs. Temperature (normalized to resistance at 25 C) N. McCarthy Blvd., Milpitas, CA Tel: Fax: /10/03
9 Application Information Refer to Application Note AP-217, "The Chip Scale Package", for a detailed description of Chip Scale Packages offered by California Micro Devices. PRINTED CIRCUIT BOARD RECOMMENDATIONS PARAMETER VALUE Pad Size on PCB 0.275mm Pad Shape Round Pad Definition Non-Solder Mask defined pads Solder Mask Opening 0.325mm Round Solder Stencil Thickness mm Solder Stencil Aperture Opening (laser cut, 5% tapered walls) 0.330mm Round Solder Flux Ratio 50/50 by volume Solder Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance Edge To Corner Ball +50µm Solder Ball Side Coplanarity +20µm Maximum Dwell Time Above Liquidous 60 seconds Soldering Maximum Temperature 260 C Non-Solder Mask Defined Pad 0.275mm DIA. Solder Stencil Opening 0.330mm DIA. Solder Mask Opening 0.325mm DIA. Figure 10. Recommended Non-Solder Mask Defined Pad Illustration 250 Temperature ( C) Figure 11. Eutectic (SnPb) Solder Ball Reflow Profile 0 1:00.0 2:00.0 3:00.0 4:00.0 Time (minutes) Figure 12. Lead-free (SnAgCu) Solder Ball Reflow Profile 10/10/ N. McCarthy Blvd., Milpitas, CA Tel: Fax:
10 Mechanical Details CSP Mechanical Specifications devices are packaged in a custom Chip Scale Package (CSP). Dimensions are presented below. For complete information on CSP packaging, see the California Micro Devices CSP Package Information document. Package Dim PACKAGE DIMENSIONS Custom CSP Bumps 15 Millimeters Inches Min Nom Max Min Nom Max A A B B B B C C D D # per tape and 3500 pieces reel Controlling dimension: millimeters C1 Mechanical Package Diagrams C B A 1 2 BOTTOM VIEW B1 A B4 B3 C2 DIMENSIONS IN MILLIMETERS D1 D2 Package Dimensions for Chip Scale Package B DIA. 63/37 Sn/Pb (Eutectic) or 96.8/2.6/0.6 Sn/Ag/Cu (Lead-free) SOLDER BUMPS SIDE VIEW A2 CSP Tape and Reel Specifications PART NUMBER CHIP SIZE (mm) POCKET SIZE (mm) B 0 X A 0 X K 0 TAPE WIDTH W REEL DIAMETER QTY PER REEL P 0 P X 1.33 X X 1.45 X mm 178mm (7") mm 4mm P o 10 Pitches Cumulative Tolerance On Tape ±0.2 mm Top Cover Tape A o W B o K o For Tape Feeder Reference Only including Draft. Concentric Around B. Embossment P 1 User Direction of Feed Center Lines of Cavity Figure 13. Tape and Reel Mechanical Data N. McCarthy Blvd., Milpitas, CA Tel: Fax: /10/03
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SMS Volt TVS Array For ESD and Latch-Up Protection. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics.
Description The SMS series of TS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect
AOZ8101. Ultra-Low Capacitance TVS Diode Array. General Description. Features. Applications. Typical Application
Ultra-Low Capacitance TS Diode Array General Description The AOZ8101 is a transient voltage suppressor array designed to protect high speed data lines from Electro Static Discharge (ESD) and lightning.
CDMSP M Surface Mount TVS Diode Array
*RoHS COMPLIANT Features RoHS compliant* Protects four I/O lines Ultra-low capacitance ~.55 pf ESD protection > kv Surge protection Applications High Definition Multimedia Interface (HDMI) Digital Visual
SP A Discrete Bidirectional TVS Diode
SP1233 2A Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SP1233 includes TVS diodes fabricated in a proprietary silicon avalanche technology to protect each I/O pin and provide a high level
UESD6V8L1F. Low Capacitance Single Line ESD Protection Diode Array UESD6V8L1F DFN General Description
Low Capacitance Single Line ESD Protection Diode Array DFN2 1.0 0.6 General Description The ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell
SP5001 Series 4 Channel TVS Common Mode Filter
Low Capacitance ESD Protection - SP51 Series SP51 Series 4 Channel TVS Common Mode Filter RoHS Pb GREEN Description The SP51 Series is a highly integrated Common Mode Filter (CMF providing both ESD protection
PRODUCT SPECIFICATION
PRODUCT SPECIFICATION DESCRIPTION DRAWN Y DESIGNED Y CHECKED Y APPROVED Y TVL 0201 01 SP0 Sandy Aaron Aaron YuChiaChang TVL 0201 01 SP0 Engineering 1. Scope TVL 0201 01 SP0 is a TVS diode designed to protect
PESDLC363T5VU ESD Protector
ESD Protector Description The protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional
AOZ8251. One-line Bidirectional TVS Diode. Features. General Description. Applications. Signal Line
One-line Bidirectional TVS Diode General Description The AOZ8251 is a one-line bidirectional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics
AOZ8234. Four-line TVS Diode
AOZ8 Four-line TS Diode General Description The AOZ8 is a transient voltage suppressor diode array designed to protect data lines from high transient conditions and ESD. This state-of-the-art device utilizes
Lead free and RoHS package. High reduction of parasitic elements through integration Complies with IEC level 4 standards:
Datasheet Common mode filter with ESD protection for high speed serial interface Features 5GHz differential bandwidth to comply with HDMI 2.0, HDMI 1.4, USB 3.1, MIPI, Display port, etc. High common mode
SDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD), electrical
HSP line ESD protection for high speed lines. Applications. Description. Features. µqfn 4 leads. Benefits. Complies with following standards
2-line ESD protection for high speed lines Datasheet - production data Benefits High ESD robustness of the equipment Suitable for high density boards Complies with following standards MIL-STD 883G Method
RClamp0504PA RailClamp Low Capacitance TVS Array
- RailClamp Description RailClamp TVS diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic
ESDALC20-1BF4. Low clamping, low capacitance bidirectional single line ESD protection. Description. Features. Applications
Low clamping, low capacitance bidirectional single line ESD protection Description Datasheet - production data The ESDALC20-1BF4 is a bidirectional single line TVS diode designed to protect the data line
UM5075/5079 Single Line ESD Protection Diode Array UM5075 SOD523 UM5079 DFN General Description Applications Features
General Description Single Line ESD Protection Diode Array UM5075 SOD523 UM5079 DFN2 1.0 0.6 The ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as
RSB6.8S LOW CAPACITANCE TVS ARRAY DESCRIPTION SC-79 PACKAGE APPLICATIONS FEATURES MECHANICAL CHARACTERISTICS PIN CONFIGURATION
LOW CAPACITANCE TVS ARRAY DESCRIPTION The is a low capacitance, transient voltage suppressor designed to protect applications such as wireless telecommunication devices, PCMCIA cards and portable electronics.
SP5001 Series 4 Channel Common Mode Filter with ESD Protection
Low Capacitance ESD Protection - SP51 Series SP51 Series 4 Channel Common Mode Filter with ESD Protection RoHS Pb GREEN Description The SP51 Series is a highly integrated Common Mode Filter (CMF) providing
EMI9404. PRAETORIAN III 4-Channel EMI Array with ESD Protection
PRAETORIAN III 4-Channel EMI Array with ESD Protection Description The EMI9404 is an inductor based ( C) EMI filter array with ESD protection, which integrates four filters in a UDFN package with 0.40
PESDWC23T5VU ESD Protector
ESD Protector Description The is a Transient Voltage Suppressor Arrays that 3 designed to protect components which are connected to data and transmission lines against electrostatic discharge(esd), electrical
SP11xx Series Discrete Unidirectional TVS Diode
SP11xx Series Discrete Unidirectional TVS Diode RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Electrostatic Discharged Protection Devices (ESD) Data Sheet Description Brightking s SDT23CXXL02 series are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage
SP1050 Series for Power-over-Ethernet PSE Protection
SP1050 Series for Power-over-Ethernet PSE Protection RoHS Pb GREEN Description The SP1050-04BTG provides over-voltage protection for Power-over-Ethernet PSE equipment in a space saving SOIC-8 package.