2SD2103. Silicon NPN Triple Diffused. Application. Outline. Low frequency power amplifier TO-220FM Base 2. Collector 3. Emitter 2.
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1 SD Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-0FM. Base. Collector. Emitter. kω (Typ)
2 SD Absolute Maximum Ratings (Ta = C) Item Symbol Rating Unit Collector to base V CBO 60 V Collector to emitter V CEO 60 V Emitter to base V EBO 7 V Collector current I C 8 A Collector peak current I C(peak) A Collector power dissipation P C W P C * Junction temperature Tj 0 C Storage temperature Tstg to +0 C Note:. Value at T C = C. Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V (BR)CBO 60 V I C. ma, I E Collector to emitter breakdown Emitter to base breakdown V (BR)CEO 60 V I C = ma, R BE = V (BR)EBO 7 V I E ma, I C Collector cutoff current I CBO µa V CB V, I E I CEO V CE V, R BE = DC current transfer ratio h FE V CE = V, I C = 4 A* Collector to emitter saturation V CE(sat). V I C = 4 A, I B = 8 ma* I CE(sat).0 I C = 8 A, I B = 80 ma* Base to emitter saturation V BE(sat).0 V I C = 4 A, I B = 8 ma* V BE(sat). I C = 8 A, I B = 80 ma* Note:. Pulse test. See switching characteristic curve of SD7.
3 SD 0 Maximum Collector Dissipation Curve Collector power dissipation Pc (W) Case temperature T C ( C) i C (peak) I C (max) Area of Safe Operation DC Operation (T C = C) PW = ms 0. Ta = C shot pulse Collector to emitter V CE (V) µs 0 µs Typical Output Characteristics. 4. T C = C 0. ma I B 0 4 Collector to emitter V CE (V) DC current transfer ratio h FE,000,000,000, V CE = V DC Current Transfer Ratio vs. Collector Current T C = 7 C C C
4 SD Collector to emitter saturation V CE (sat) (V) Base to emitter saturation V BE (sat) (V) Saturation Voltage vs. Collector Current V BE (sat) V CE (sat) l C /l B 0 T C = C Transient Thermal Resistance Thermal resistance θ j-c ( C/W) TC = C m m 0m Time t (s) 4
5 SD When using this document, keep the following in mind:. This document may, wholly or partially, be subject to change without notice.. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi s permission.. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein.. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo 0, Japan Tel: Tokyo (0) 70- Fax: (0) 70-9 For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 000 Sierra Point Parkway Continental Europe Brisbane, CA Dornacher Straße U S A D-86 Feldkirchen Tel: München Fax: Tel: Fax: Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: Fax: Hitachi Asia Pte. Ltd. 6 Collyer Quay #0-00 Hitachi Tower Singapore 04 Tel: -0 Fax: - Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 798 Fax: 70607
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