PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET
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1 PRELIMINARY DATA SHEET FEATURES VERY LOW NOISE FIGURE:.5 db TYP at 4 GHz HIGH ASSOCIATED GAIN: 16. db TYP at 4 GHz GATE WIDTH: 8 µm TAPE & REEL PACKAGING OPTION AVAILABLE LOW COST PLASTIC PACKAGE DESCRIPTION C BAND SUPER LOW NOISE HJ FET The NE334S1 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 5 C) Maximum Stable Gain, MSG. (db) Maximum Available Gain, MAG. (db) Forward Insertion Gain, S1S (db) NE334S1 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 4 VDS = V ID = 1 ma Frequency, f (GHz) PART NUMBER NE334S1 PACKAGE OUTLINE S1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF 1 Noise Figure, VDS =. V, ID = 15 ma, f = 4 GHz db.5.35 GA 1 Associated Gain, VDS =. V, ID = 15 ma, f = 4 GHz db IDSS Saturated Drain Current, VDS =. V, VGS = V ma 8 15 gm Transconductance, VDS =. V, ID = 14 ma ms 7 85 VGS(off) Gate to Source Cutoff Voltage, VDS =. V, ID = 1 µa, V IGSO Gate to Source Leak Current, VGS = -3. V µa S1S MSG. MAG RECOMMENDED OPERATING CONDITION (TA = 5 C) SYMBOLS CHARACTERISTIC UNITS MIN TYP MAX VDS Drain to Source Voltage V.5 ID Drain Current ma 15 PIN Input Power dbm 1. Typical values of noise figures and associated gain are those obtained when 5% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories
2 NE334S1 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4. VGS Gate to Source Voltage V -3. IDS Drain Current ma IDSS TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to +15 PT Total Power Dissipation mw 3 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) Drain Current, IDS (ma) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA ( C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = V TYPICAL NOISE PARAMETERS (TA = 5 C) VDS = V, IDS = 15 ma FREQ. NFMIN GA ΓOPT (GHz) (db) (db) MAG ANG Rn/ TYPICAL CONSTANT NOISE FIGURE CIRCLE (VDS = V, IDS = 15 ma, f = 4 GHz) Drain Current, ID (ma) Γopt.4 db.6 db.8 db. -. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = V -. V -.4 V -.6 V Gate to Source Voltage, VGS (V) Drain to Source Voltage, VDS (V)
3 NE334S1 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 5 C) VDS = V, ID = 1 ma Coordinates in Ohms Frequency in GHz VDS = V, ID = 1 ma FREQUENCY S11 S1 S1 S K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain Calculations: MAG = j1 -j1 S1 S1 j5 -j5 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain j5 -j5 j1 S -j1 S S S
4 NE334S1 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 5 C) VDS = V, ID = 15 ma FREQUENCY S11 S1 S1 S K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) 1. Gain Calculations: MAG = S1 S Coordinates in Ohms Frequency in GHz VDS = V, ID = 15 ma (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain -1.. S GHz S11 GHz S1 GHz S1 GHz
5 NE334S1 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 5 C) VDS = V, ID = ma Coordinates in Ohms Frequency in GHz VDS = V, ID = ma FREQUENCY S11 S1 S1 S K MAG 1 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) Gain Calculations: MAG = S1 S1 j1 -j1 j5 -j5 (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). MAG = Maximum Available Gain MSG = Maximum Stable Gain j5 -j5 j1 S -j1 S S1 S
6 NE334S1 OUTLINE DIMENSIONS (Units in mm) ORDERING INFORMATION.15 ±.5 PACKAGE OUTLINE S1. ±. 1 C.65 TYP. 1.9 ± ±. 3.4 MAX. ± MAX.5 TYP.. ±. 1. Source. Drain 3. Source 4. Gate PART NUMBER AVAILABILITY PACKAGE NE334S1 Bulk S1 NE334S1-T1 Tape & reel 1K/reel S1 NE334S1-T1B Tape & reel 4K/reel S1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 7/18/
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