PCN Number: PCN Date: 09/29/2015 TPS76950 LEN to NFME Customer. Quality PCN Manager PCN Type: 180 day Dept: Contact:
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1 PCN Number: PCN Date: 09/29/2015 Title: TPS76950 LEN to NFME Customer Quality PCN Manager PCN Type: 180 day Dept: Contact: Services Proposed 1 st Ship Date: 03/29/2016 Estimated Sample Date provided at Availability: sample request Change Type: Assembly Site Design Wafer Bump Site Assembly Process Data Sheet Wafer Bump Material Assembly Materials Part number change Wafer Bump Process Mechanical Specification Test Site Wafer Fab Site Packing/Shipping/Labeling Test Process Wafer Fab Materials Wafer Fab Process PCN Details Description of Change: Texas Instruments Incorporated is announcing the qualification of NFME (Nantong Fujitsu Microelectronics) for TPS76950QDBVRQ1 and TPS76950QDBVRG4Q1 to offload from Lingsen. Material changes are as follows: Pin 5 From: To: Pkg DBV Leadframe SID# , Cu, NiPdAu SID# L-18, Cu, NiPdAu Die Attach SID# 0003C10332 SID# A-03 Reason for Change: Mitigate capacity shortage in the Lingsen assembly/test site. Anticipated impact on Fit, Form, Function, Quality or Reliability (positive / negative): No anticipated impact. Changes to product identification resulting from this PCN: The product box label site origin codes will change as described below: Current Assembly Site Assy site code (22L) Assy country code (23L) Lingsen (Lingsen Precision Industries) LIN Taiwan New Chip Site Assy site code (22L) Assy country code (23L) NFME (Nantong Fujitsu Microelectronics) NFM China Example sample product shipping label (not actual product label):
2 Product Affected: TPS76950QDBVRG4Q1 TPS76950QDBVRQ1 Automotive Product Qualification Summary (As per AEC-Q100 and JEDEC Guidelines) Supplier Name: Texas Instruments Inc. Supplier Wafer Fabrication Site: Texas Instruments Dallas fab (DFAB) Supplier Code: Supplier Die Revision: B Supplier Part Number: TPS73201QDBVRQ1 Supplier Assembly/Test Site: NFME Customer Name: Supplier Package / Pin: DBV / 5 Customer Part Number: Pb-Free Lead Frame (Y/N): Y Device Description: Regulator Green Mold Compound (Y/N): Y MSL Rating: Level1 Operating Temp Range: -40C to +125C Peak Solder Reflow Temp: 260C Automotive Grade Level : 1 Test # Reference Test Conditions PC A1 JESD J-STD-020 HAST A2 JESD22-A101 JESD22-A110 AC A3 JESD22-A102 JESD22-A118 Min Lots SS / lot Min Total TEST GROUP A ACCELERATED ENVIRONMENT STRESS TESTS Preconditioning: SMD only; Moisture Preconditioning for THB/HAST, AC/UHST, TC, HTSL, and HTOL Performed on ALL SMD devices prior to THB/HAST, AC/UHST, TC and PTC Results Lot/pass/fail Highly Accelerated Stress Test: 130 C/85%/96 hours or 110 C/85%/264 hours /231/0 Autoclave: 121 C/15 psig/96 hours /231/0 TC A4 JESD22-A104 Temperature Cycle: -65 C/+150 C/500 cycles Post Temperature Cycle Bond Pull: 3 grams minimum TEST GROUP B ACCELERATED LIFETIME SIMULATION TESTS 5 3/231/0 HTOL B1 JESD22-A108 High Temp Operating Life: 125 C/1000 hours /231/0 ELFR B2 AEC-Q Early Life Failure Rate: WBS C1 AEC-Q Wire Bond Shear Test: (Cpk > 1.67) WBP C2 Mil-Std-883 Wire Bond Pull: Method 2011 Each bonder used (Cpk > 1.67) SD C3 JESD22-B102 Solderability: (>95% coverage) 8 hr steam age (1 hour for Au-plated leads) PD C4 JESD22-B100 Physical Dimensions: JESD22-B108 (Cpk > 1.67) 1/5/ /800/0 TEST GROUP C PACKAGE ASSEMBLY INTEGRITY TESTS 30 bonds 30 bonds 5 parts min. 5 parts min. TEST GROUP E- ELECTRICAL VERIFICATION 30 bonds 30 bonds Pass Pass /30/ /10/0 TEST E1 User/Supplier Pre and Post Stress Electrical Test: All All All Pass Specification HBM E2 AEC-Q Electrostatic Discharge, Human Body Model: See Test 1 (2kV - H2 or better) Method CDM E3 AEC-Q Electrostatic Discharge, Charged Device Model: 1 See Test Pass Comments: (N/A =Not Applicable) data data device data Exceptions to AEC - Q100 M317M D LM317 MD LM31M D
3 (750V corner leads, 500V for all other pins) Method LU E4 AEC-Q Latch-Up: ED E5 AEC-Q Electrical Distributions: (Cpk > 1.67) Pass device data (1) Grade 0 (or A): -40 C to +150 C ambient operating temperature range Grade 1 (or Q): -40 C to +125 C ambient operating temperature range Grade 2 (or T): -40 C to +105 C ambient operating temperature range Grade 3 (or I): -40 C to +85 C ambient operating temperature range Grade 4 (or C): -0 C to +150 C ambient operating temperature range These are recommended minimum lot/sample sizes. Lot/sample size may be reduced depending on available data. (3) Generic data may be used. Quality and Reliability Data Disclaimer TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customer should provide adequate design and operating safeguards. Quality and reliability data provided by Texas Instruments is intended to be an estimate of product performance based upon history only. It does not imply that any performance levels reflected in such data can be met if the product is operated outside the conditions expressly stated in the latest published data sheet or agreed-to customer specification for a device. Reliability data shows characteristic failure mechanisms of the specific environmental stress as documented in the industry standards for each stress condition.
4 Assembly Qualification Ball Shear Data Min 5.13 Max 6.67 Ave 5.80 Stdev 0.33 CPk 1.80 Spec Criteria (LSL) (g) 4.00 Stability Capability Pass/Fail Wire Pull Data Min 9.10 Max Ave Stdev 1.33 CPk 1.99 Spec Criteria (LSL) (g) 4 Stability Capability Pass/Fail No visual anomalies seen. 7/10/2014 AEO-MSA 5 Electrical Characterization Legend: CPK < < CPK < 1.67 CPK > 1.67 Spec Parameter Test Parameter LSL USL Units Temp Mean StDev CPk VOUT Accuracy P _VregOut Vin *1mA V E VOUT Accuracy P _VregOut Vin *1mA V E VOUT Accuracy P _VregOut Vin *1mA V E VOUT Accuracy P _VregOut VinMin *50mA V E VOUT Accuracy P _VregOut VinMin *50mA V E VOUT Accuracy P _VregOut VinMin *50mA V E Ground-pin Current P _Iq Gnd *Vin 1mA 5.80E-06 Amps E E Ground-pin Current P _Iq Gnd *Vin 1mA 5.80E-06 Amps E E Ground-pin Current P _Iq Gnd *Vin 1mA 5.80E-06 Amps E E Ground-pin Current P _Iq Gnd *Vin 50mA 5.80E-06 Amps E E Ground-pin Current P _Iq Gnd *Vin 50mA 5.80E-06 Amps E E Ground-pin Current P _Iq Gnd *Vin 50mA 5.80E-06 Amps E E Dropout Voltage P _DropOut *50mA 0.75 V E Dropout Voltage P _DropOut *50mA 0.75 V E Dropout Voltage P _DropOut *50mA 0.75 V E Dropout Voltage P _DropOut *15mA 0.75 V E Dropout Voltage P _DropOut *15mA 0.75 V E Dropout Voltage P _DropOut *15mA 0.75 V E Output Current Limit P _ *ILimit Amps E Output Current Limit P _ *ILimit Amps E Output Current Limit P _ *ILimit Amps E VOUT Accuracy P _VregOut 3.2 *15mA V E VOUT Accuracy P _VregOut 3.2 *15mA V E VOUT Accuracy P _VregOut 3.2 *15mA V E /10/2014 AEO-MSA 6
5 TPS Electrical Characterization Parameter Temp LTL UTL Units Avg StdDev CPK Vreg VIN 3.2v *1mA load 125C VOLTS 1.219E E Vreg VIN 5.5v *1mA load 125C VOLTS 1.220E E Vreg VIN 5.5v *200mA lo 125C VOLTS 1.245E E Vreg VIN 3.2v *200mA lo 125C VOLTS 1.244E E Func_Dis VIN 2.7v *10mA loa 125C VOLTS 1.141E E Vdrop VIN 5.5v *200mA lo 125C mvolts 9.295E E siqq Input standby *I 125C namps 3.452E E siqq Input standby *I2 125C namps 3.531E E siqq Input standby *Delta 125C namps 7.939E E Iil VENB *0.9v 125C uamps 3.914E E Iih VENB *1.8v 125C uamps 2.997E E iqq_gnd VIN 5.5v *10mA loa 125C uamps E E iqq_gnd VIN 5.5v *100mA lo 125C uamps E E iqq_gnd Delta 5.5 *10mA loa 125C uamps E E OUT ILimit *VIN 5.5v 125C mamps 3.912E E Vreg VIN 3.2v *1mA load 32C VOLTS 1.220E E Vreg VIN 5.5v *1mA load 32C VOLTS 1.221E E Vreg VIN 5.5v *200mA lo 32C VOLTS 1.241E E Vreg VIN 3.2v *200mA lo 32C VOLTS 1.241E E Func_Dis VIN 2.7v *10mA loa 32C VOLTS 2.134E E Vdrop VIN 5.5v *200mA lo 32C 107 mvolts 8.379E E siqq Input standby *I 32C namps 8.107E E siqq Input standby *I2 32C namps 1.036E E siqq Input standby *Delta 32C namps 2.254E E Iil VENB *0.9v 32C uamps 7.272E E Iih VENB *1.8v 32C uamps 3.045E E iqq_gnd VIN 5.5v *10mA loa 32C uamps E E iqq_gnd VIN 5.5v *100mA lo 32C uamps E E iqq_gnd Delta 5.5 *10mA loa 32C uamps E E OUT ILimit *VIN 5.5v 32C mamps 3.928E E Vreg VIN 3.2v *1mA load -40C VOLTS 1.218E E Vreg VIN 5.5v *1mA load -40C VOLTS 1.218E E Vreg VIN 5.5v *200mA lo -40C VOLTS 1.235E E Vreg VIN 3.2v *200mA lo -40C VOLTS 1.235E E Func_Dis VIN 2.7v *10mA loa -40C VOLTS 1.740E E Vdrop VIN 5.5v *200mA lo -40C 107 mvolts 6.969E E siqq Input standby *I -40C namps 4.913E E siqq Input standby *I2-40C namps 5.773E E siqq Input standby *Delta -40C namps 8.597E E Iil VENB *0.9v -40C uamps 6.416E E Iih VENB *1.8v -40C uamps 2.714E E iqq_gnd VIN 5.5v *10mA loa -40C uamps E E iqq_gnd VIN 5.5v *100mA lo -40C uamps E E iqq_gnd Delta 5.5 *10mA loa -40C uamps E E OUT ILimit *VIN 5.5v -40C mamps 3.938E E Notes For questions regarding this notice, s can be sent to the regional contacts shown below or your local Field Sales Representative. Location USA Europe Asia Pacific Japan PCNAmericasContact@list.ti.com PCNEuropeContact@list.ti.com PCNAsiaContact@list.ti.com PCNJapanContact@list.ti.com
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