SEMICONDUCTOR GENERAL DATA

Transcription

1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 mw SOT- Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes Manufacturing Locations: WAFER FAB: Phoenix, Arizona ASSEMBLY: Seremban, Malaysia TEST: Seremban, Malaysia MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 60 C for seconds GENERAL DATA 5 mw SOT- Cathode Anode THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* PD 5 mw TA = 5 C Derate above 5 C.8 mw/ C Thermal Resistance Junction to Ambient RθJA 556 C/W Total Device Dissipation PD 00 mw Alumina Substrate,** TA = 5 C Derate above 5 C.4 mw/ C Thermal Resistance Junction to Ambient RθJA 47 C/W Junction and Storage Temeprature TJ, Tstg 50 C CASE 8-07, STYLE 8 SOT- (TO-6AB) PLASTIC **FR-5 =.0 x 0.75 x 0.6 in. **Alumina = 0.4 x 0. x 0.04 in. 99.5% alumina. 5 mw SOT- Data Sheet 7-9

2 GENERAL DATA 5 mw SOT- TYPICAL CHARACTERISTICS VZ, TEMPERATURE COEFFICIENT (mv/ C) θ TYPICAL TC VALUES FOR MMBZ5BLT SERIES VZ, NOMINAL ZENER VOLTAGE (V) 8 IZT 9 VZ, TEMPERATURE COEFFICIENT (mv/ C) θ 0 TYPICAL TC VALUES FOR MMBZ5BLT SERIES IZT 0 VZ, NOMINAL ZENER VOLTAGE (V) Figure. Temperature Coefficients (Temperature Range 55 C to +50 C) Figure. Temperature Coefficients (Temperature Range 55 C to +50 C) ZZT, DYNAMIC IMPEDANCE ( Ω ) 00 0 IZ = ma 5 ma 0 ma TJ = 5 C IZ(AC) = 0. IZ(DC) f = khz IF, FORWARD CURRENT (ma) V (MMBZ567BLT) 9 V (MMBZ570BLT) 50 C 75 C 5 C 0 C VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V).0.. Figure. Effect of Zener Voltage on Zener Impedance Figure 4. Typical Forward Voltage 5 mw SOT- Data Sheet 7-40

3 GENERAL DATA 5 mw SOT- TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) V BIAS V BIAS BIAS AT 50% OF VZ NOM TA = 5 C I R, LEAKAGE CURRENT ( µ A) C +5 C 55 C VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Typical Leakage 0 TA = 5 C 0 TA = 5 C I Z, ZENER CURRENT (ma) 0. IZ, ZENER CURRENT (ma) VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 7. Zener Voltage versus Zener (VZ Up to V) Figure 8. Zener Voltage versus Zener ( V to 9 V) 5 mw SOT- Data Sheet 7-4

4 GENERAL DATA 5 mw SOT- ELECTRICAL CHARACTERISTICS (Pinout: -Anode, -NC, -Cathode) (VF = 0.9 V IF = ma for all types) Type Number Zener Voltage Max Zener Max Zener Voltage Max Zener Zener Voltage Max Zener V Z (Volts) Impedance Reverse V Z (Volts) Impedance V Z (Volts) Impedance d VZ ZT =5mA Z ZT ZT =ma ZT ZT =0mA Z (mv/k) C pf ZT (Note ) (Ohms) (Note ) (Note ) (Ohms) I ZT = 5 ma ZT = I ZT ZT = 5mA V V R = 0 Marking Nom Min Max Volts Min Max ma Min Max 0 ma Min Max f = MHz BZX84CV4LT Z BZX84CV7LT Z BZX84CV0LT Z BZX84CVLT Z BZX84CV6LT Z BZX84CV9LT Z BZX84C4VLT W BZX84C4V7LT Z BZX84C5VLT Z BZX84C5V6LT Z BZX84C6VLT Z BZX84C6V8LT Z BZX84C7V5LT Z BZX84C8VLT Z BZX84C9VLT Z BZX84CLT Z BZX84CLT Y BZX84CLT Y BZX84CLT Y BZX84C5LT Y BZX84C6LT Y BZX84C8LT Y BZX84C0LT Y BZX84CLT Y BZX84C4LT Y V Z ZT =ma Z ZT ZT = ma V Z ZT = 0. ma Z ZT ZT4 = 0.5 ma (Note ) V Z ZT =ma Z ZT ZT = ma d VZ /dt (mv/k) I ZT = ma BZX84C7LT Y BZX84C0LT Y BZX84CLT Y BZX84C6LT Y BZX84C9LT Y BZX84C4LT Y BZX84C47LT Y BZX84C5LT Y BZX84C56LT Y BZX84C6LT Y BZX84C68LT Y BZX84C75LT Y NOTES:. Zener voltage is measured with a pulse test current (I Z ) applied at an ambient temperature of 5 C. NOTES:. The zener impedance, Z ZT, for the 7 through 75 volt types is tested at 0.5 ma rather than the test current of 0. ma used for V Z. 5 mw SOT- Data Sheet 7-4

5 GENERAL DATA 5 mw SOT- Zener Voltage Regulator Diodes Surface Mounted 5 mw SOT- A NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A B C D G H J K L S V INCHES MIN MAX MILLIMETERS MIN MAX B S STYLE 8: PIN. ANODE. NO CONNECTION. CATHODE V G inches mm D H C K J SOT- Footprint CASE 8-07 PLASTIC (Refer to Section for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix MPQ (Units) Tape and Reel T K Tape and Ammo T K (Refer to Section for more information on Packaging Specifications.) 5 mw SOT- Data Sheet 7-4

6 GENERAL DATA 5 mw SOT- ELECTRICAL CHARACTERISTICS (Pinout: -Anode, -NC, -Cathode) (VF = 0.9 V IF = ma for all types.) Device Marking Test IZT ma Zener Voltage VZ (± 5%) Nominal (Note ) ZZK IZ = 0.5 ma Ω Max ZZT IZ = % Mod Ω Max MMBZ5BLT 8A MMBZ5BLT 8B MMBZ5BLT 8C MMBZ54BLT 8D MMBZ55BLT 8E MMBZ56BLT 8A MMBZ57BLT 8B MMBZ58BLT 8C MMBZ59BLT 8D MMBZ50BLT 8E MMBZ5BLT 8F MMBZ5BLT 8G MMBZ5BLT 8H MMBZ54BLT 8J MMBZ55BLT 8K MMBZ56BLT 8L MMBZ57BLT 8M MMBZ58BLT 8N MMBZ59BLT 8P MMBZ540BLT 8Q MMBZ54BLT 8R MMBZ54BLT 8S MMBZ54BLT 8T MMBZ544BLT 8U MMBZ545BLT 8V MMBZ546BLT 8W MMBZ547BLT 8X MMBZ548BLT 8Y MMBZ549BLT 8Z MMBZ550BLT 8A MMBZ55BLT 8B MMBZ55BLT 8C MMBZ55BLT 8D MMBZ554BLT 8E MMBZ555BLT 8F MMBZ556BLT 8G MMBZ557BLT 8H MMBZ558BLT 8J MMBZ559BLT 8K MMBZ560BLT 8F MMBZ56BLT 8M MMBZ56BLT 8N MMBZ56BLT 8P MMBZ564BLT 8Q MMBZ565BLT 8R MMBZ566BLT 8S MMBZ567BLT 8T MMBZ568BLT 8U MMBZ569BLT 8V MMBZ570BLT 8W NOTE. Zener voltage is measured with a pulse test current (I ZT ) applied at an ambient temperature of 5 C. Max IR VR V 5 mw SOT- Data Sheet 7-44

7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer s Data Sheet Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD- package. These devices provide a convenient alternative to the leadless 4 package style. 500 mw Rating on FR-4 or FR-5 Board Package Designed for Optimal Automated Board Assembly Corrosion Resistant Finish, Easily Solderable ESD Rating of Class (exceeding 6 kv) per the Human Body Model Small Package Size for High Density Applications Available in 8 mm Tape and Reel Add T to the device number to order the 7 inch/000 unit reel. Add T to the device number to order the inch/,000 unit reel. Wafer Fab Location: Phoenix, Arizona Assembly/Test Location: Seremban, Malaysia MMSZ5BT thru MMSZ570BT General Purpose, Medium Wide Voltage Range.4 to 9 Volts *Motorola Preferred Device Series PLASTIC SURFACE MOUNT ZENER DIODES 500 MILLIWATTS.8 9 VOLTS : CATHODE : ANODE MMSZ4678T thru MMSZ477T Low Operating s, Low Leakage, Sharp Breakdown Characteristics Wide Voltage Range.8 to 4 Volts MMSZV4T thru MMSZ75T Specified Similar to European BZV55C Series Wide Voltage Range.4 to 75 Volts CASE 45, STYLE PLASTIC DEVICE RATING (TA = 5 C unless otherwise noted) Rating Symbol Value Unit Power Dissipation on FR-4 or FR-5 Board [] Derate above TL = 75 C Thermal Resistance Junction to Lead [] Thermal Resistance Junction to Ambient [] Junction Temperature Range TJ 55 to +50 C Storage Temperature Range Tstg 55 to +50 C Lead Solder Temperature Maximum ( sec. duration) 60 C [] FR-4 or FR-5 =.5 x.5 inches, using the Motorola minimum recommended footprint as shown in Figure. [] Thermal Resistance measurement obtained via Infrared Scan Method PD RθJL RθJA mw mw/ C Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Designer s is a trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. C/W Preferred devices are Motorola recommended choices for future use and best overall value. 500 mw Leadless (SOD-) Data Sheet 7-45

8 MMSZ5BT, MMSZ4678T, MMSZV4T Series TYPICAL CHARACTERISTICS VZ, TEMPERATURE COEFFICIENT (mv/ C) θ TYPICAL TC VALUES FOR MMSZ5BT SERIES VZ, NOMINAL ZENER VOLTAGE (V) 8 IZT 9 VZ, TEMPERATURE COEFFICIENT (mv/ C) θ 0 TYPICAL TC VALUES FOR MMSZ5BT SERIES IZT 0 VZ, NOMINAL ZENER VOLTAGE (V) Figure. Temperature Coefficients (Temperature Range 55 C to +50 C) Figure. Temperature Coefficients (Temperature Range 55 C to +50 C). 00 PD, POWER DISSIPATION (WATTS) PD versus TA PD versus TL Ppk, PEAK SURGE POWER (WATTS) 0 RECTANGULAR WAVEFORM, TA = 5 C T, TEMPERATURE ( C) PW, PULSE WIDTH (ms) Figure. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power ZZT, DYNAMIC IMPEDANCE ( Ω ) 00 0 IZ = ma 5 ma 0 ma TJ = 5 C IZ(AC) = 0. IZ(DC) f = khz IF, FORWARD CURRENT (ma) V (MMSZ567BT) 9 V (MMSZ570BT) 50 C 75 C 5 C 0 C VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V).0.. Figure 5. Effect of Zener Voltage on Zener Impedance Figure 6. Typical Forward Voltage 500 mw Leadless (SOD-) Data Sheet 7-46

9 MMSZ5BT, MMSZ4678T, MMSZV4T Series TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) V BIAS V BIAS BIAS AT 50% OF VZ NOM TA = 5 C I R, LEAKAGE CURRENT ( µ A) C +5 C 55 C VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Typical Leakage 0 TA = 5 C 0 TA = 5 C I Z, ZENER CURRENT (ma) 0. IZ, ZENER CURRENT (ma) VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 9. Zener Voltage versus Zener (VZ Up to V) Figure. Zener Voltage versus Zener ( V to 9 V) 500 mw Leadless (SOD-) Data Sheet 7-47

10 MMSZ5BT, MMSZ4678T, MMSZV4T Series ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted []), (VF = 0.9 V IF = ma for all types) Zener Voltage IZT Volts [] [] Type Number Marking Nom Min Max Test IZT ma IZ = IZT Ω Max Zener Impedance [] IZK = 0.5 ma Ω Max Reverse Leakage VR µa Test Voltage VR MMSZ5BT C MMSZ5BT C MMSZ5BT C MMSZ54BT C MMSZ55BT C MMSZ56BT D MMSZ57BT D MMSZ58BT D MMSZ59BT D MMSZ50BT D MMSZ5BT E MMSZ5BT E MMSZ5BT E MMSZ54BT E MMSZ55BT E MMSZ56BT F MMSZ57BT F MMSZ58BT F MMSZ59BT F MMSZ540BT F MMSZ54BT H MMSZ54BT H MMSZ54BT H MMSZ544BT H MMSZ545BT H MMSZ546BT J MMSZ547BT J MMSZ548BT J MMSZ549BT J MMSZ550BT J MMSZ55BT K MMSZ55BT K MMSZ55BT K MMSZ554BT K MMSZ555BT K [] Nominal zener voltage is measured with the device junction in thermal equilibrium at T L = 0 C ± C. [] All part numbers shown indicate a V Z tolerance of ±5%. [] Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC) = 0. I Z(DC), with the AC frequency = khz. Volts 500 mw Leadless (SOD-) Data Sheet 7-48

11 MMSZ5BT, MMSZ4678T, MMSZV4T Series ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted []), (VF = 0.9 V IF = ma for all types) Zener Voltage IZT Volts [] [] Type Number Marking Nom Min Max Test IZT ma IZ = IZT Ω Max Zener Impedance [] IZK = 0.5 ma Ω Max Reverse Leakage VR µa Test Voltage VR MMSZ556BT M MMSZ557BT M MMSZ558BT M MMSZ559BT M MMSZ560BT M MMSZ56BT N MMSZ56BT N MMSZ56BT N MMSZ564BT N MMSZ565BT N MMSZ566BT P MMSZ567BT P MMSZ568BT P MMSZ569BT P MMSZ570BT P [] Nominal zener voltage is measured with the device junction in thermal equilibrium at T L = 0 C ± C. [] All part numbers shown indicate a V Z tolerance of ±5%. [] Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC) = 0. I Z(DC), with the AC frequency = khz. Volts 500 mw Leadless (SOD-) Data Sheet 7-49

12 MMSZ5BT, MMSZ4678T, MMSZV4T Series ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted [], (VF = 0.9 V IF = ma for all types) Zener Voltage IZT = 50 µa Volts Type [] [] Number Marking Nom Min Max Max Reverse Leakage VR Test Voltage VR µa Volts MMSZ4678T CC MMSZ4679T CD MMSZ4680T CE MMSZ468T CF MMSZ468T CH MMSZ468T CJ MMSZ4684T CK MMSZ4685T CM MMSZ4686T CN MMSZ4687T CP MMSZ4688T CT MMSZ4689T CU MMSZ4690T CV MMSZ469T CA MMSZ469T CX MMSZ469T CY MMSZ4694T CZ MMSZ4695T DC MMSZ4696T DD MMSZ4697T DE MMSZ4698T DF MMSZ4699T DH MMSZ4700T DJ MMSZ470T DK MMSZ470T DM MMSZ470T DN MMSZ4704T DP MMSZ4705T DT MMSZ4706T DU MMSZ4707T DV MMSZ4708T DA MMSZ4709T DZ MMSZ47T DY MMSZ47T EA MMSZ47T EC MMSZ47T ED MMSZ474T EE MMSZ475T EF MMSZ476T EH MMSZ477T EJ [] Nominal zener voltage is measured with the device junction in thermal equilibrium at T L = 0 C ± C. [] All part numbers shown indicate a V Z tolerance of ± 5% 500 mw Leadless (SOD-) Data Sheet 7-50

13 MMSZ5BT, MMSZ4678T, MMSZV4T Series ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted), (VF = 0.9 V IF = ma for all types) Zener Voltage VZ IZT = 5 ma [][] Type Number Marking Nom Min Max Max Zener Impedance IZT = 5 ma [] Ω Max Reverse Leakage Zener Voltage VZ IZT = ma [] VR µa Volts Min Max Max Zener Impedance IZT = ma [] Ω MMSZV4T T MMSZV7T T MMSZV0T T MMSZVT T MMSZV6T T MMSZV9T U MMSZ4VT U MMSZ4V7T U MMSZ5VT U MMSZ5V6T U MMSZ6VT V MMSZ6V8T V MMSZ7V5T V MMSZ8VT V MMSZ9VT V MMSZT A MMSZT A MMSZT A MMSZT A MMSZ5T A MMSZ6T X MMSZ8T X MMSZ0T X MMSZT X MMSZ4T X Zener Voltage VZ IZT = ma [][] Type Number Marking Nom Min Max Max Zener Impedance IZT = ma [] Ω Max Reverse Leakage Zener Voltage VZ IZT = 0. ma [] VR µa Volts Min Max Max Zener Impedance IZT = 0.5 ma [][4] Ω MMSZ7T Y MMSZ0T Y MMSZT Y MMSZ6T Y MMSZ9T Y MMSZ4T Z MMSZ47T Z MMSZ5T Z MMSZ56T Z MMSZ6T Z MMSZ68T Z MMSZ75T Z [] Zener voltage is measured with the zener current applied for PW =.0 ms. [] All part numbers shown indicate a V Z tolerance of ±5%. [] Z ZT and Z ZT are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC) = 0. I Z(DC), [] with the AC frequency = khz. [4] The zener impedance, Z ZT, for the 7 through 75 volt types is tested at 0.5 ma rather than the test current of 0. ma used for V Z. 500 mw Leadless (SOD-) Data Sheet 7-5

14 MMSZ5BT, MMSZ4678T, MMSZV4T Series INFORMATION FOR USING THE SOD- SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNT APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. The minimum recommended footprint for the SOD- is shown at the right. The SOD- package can be used on existing surface mount boards which have been designed for the leadless 4 package style. The footprint compatibility makes conversion from leadless 4 to SOD- straightforward ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ mm inches Figure. Minimum Recommended Footprint SOD- POWER DISSIPATION The power dissipation of the SOD- is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOD- package, PD can be calculated as follows: PD = T J(max) TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 5 C, one can calculate the power dissipation of the device which in this case is 0.7 watts. PD = 50 C 5 C 40 C/W = 0.7 watts The 40 C/W for the SOD- package assumes using recommended footprint shown on FR-4 glass epoxy printed circuit board. Another alternative is to use a ceramic substrate or an aluminum core board such as Thermal Clad. By using an aluminum core board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. GENERAL SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 0 C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of C. The soldering temperature and time shall not exceed 60 C for more than seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5 C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 500 mw Leadless (SOD-) Data Sheet 7-5

15 Zener Voltage Regulator Diodes Surface Mounted 500 mw SOD- A ÂÂÂ C H ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ K B mm inches E SOD- Footprint D J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH THRU -0 OBSOLETE, NEW STANDARD DIM A B C D E H J K MILLIMETERS MIN MAX MIN INCHES MAX CASE 45 PLASTIC STYLE : PIN. CATHODE. ANODE (Refer to Section for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix Tape and Reel T() MPQ (Units) K Tape and Reel T() K NOTE:. The numbers on the suffixes indicate the following: NOTE:.. 7 Reel. Cathode lead toward sprocket hole. NOTE:.. Reel. Cathode lead toward sprocket hole. (Refer to Section for more information on Packaging Specifications.) 500 mw Leadless (SOD-) Data Sheet 7-5

16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of Watt Zener Diodes offers the following advantages. Specification Features: A Complete Voltage Range. to 00 Volts Flat Handling Surface for Accurate Placement Package Design for Top Side or Bottom Circuit Board Mounting Available in Tape and Reel Mechanical Characteristics: CASE: Void-free, transfer-molded plastic MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 60 C for seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads POLARITY: Cathode indicated by molded polarity notch. When operated in zener mode, cathode will be positive with respect to anode. MOUNTING POSITION: Any WEIGHT: Modified L-Bend providing more contact area to bond pad WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seremban, Malaysia SMB59BT through SMB5956BT PLASTIC SURFACE MOUNT ZENER DIODES WATTS. 00 VOLTS CASE 40A PLASTIC MAXIMUM RATINGS DC Power TL = 75 C, Measured at Zero Lead Length Derate above 75 C DC Power TA = 5 C* Derate above 5 C Devices listed in bold, italic are Motorola preferred devices. Rating Symbol Value Unit PD 40 PD Operating and Storage Junction Temperature Range TJ, Tstg 65 to +50 C *FR4 Board, within to device, using Motorola minimum recommended footprint, as shown in case 40A outline dimensions spec. ELECTRICAL CHARACTERISTICS (TL = 0 C unless otherwise noted.) (VF =.5 Volts IF = 00 madc for all types.) Device* Nominal Zener Voltage IZT Volts (Note ) Test IZT ma Max Zener Impedance (Note ) ZT Ohms ZZK IZK ma Max Reverse Leakage IR VR Volts Maximum DC Zener IZM madc Watts mw/ C mw mw/ C Device Marking SMB59BT B SMB594BT B SMB595BT B SMB596BT B SMB597BT B SMB598BT B SMB599BT B SMB590BT B SMB59BT B SMB59BT B SMB59BT B SMB594BT B SMB595BT B SMB596BT B SMB597BT B SMB598BT B *TOLERANCE AND VOLTAGE DESIGNATION Tolerance designation The type numbers listed indicate a tolerance of ±5%. (continued) Watt DC Power Data Sheet 7-54

17 SMB59BT Series ELECTRICAL CHARACTERISTICS continued (TL = 0 C unless otherwise noted.) (VF =.5 Volts IF = 00 madc for all types.) Device* Nominal Zener Voltage IZT Volts (Note ) Test IZT ma Max Zener Impedance (Note ) ZT Ohms ZZK IZK ma Max Reverse Leakage IR VR Volts Maximum DC Zener IZM madc Device Marking SMB599BT B SMB590BT B SMB59BT B SMB59BT B SMB59BT B SMB594BT B SMB595BT B SMB596BT B SMB597BT B SMB598BT B SMB599BT B SMB5940BT B SMB594BT B SMB594BT B SMB594BT B SMB5944BT B SMB5945BT B SMB5946BT B SMB5947BT B SMB5948BT B SMB5949BT B SMB5950BT B SMB595BT B SMB595BT B SMB595BT B SMB5954BT B SMB5955BT B SMB5956BT B *TOLERANCE AND VOLTAGE DESIGNATION Tolerance designation The type numbers listed indicate a tolerance of ±5%. Devices listed in bold, italic are Motorola preferred devices. Watt DC Power Data Sheet 7-55

18 SMB59BT Series P D, MAXIMUM POWER DISSIPATION (WATTS) TL TA T, TEMPERATURE ( C) Figure. Steady State Power Derating P PK, PEAK SURGE POWER (WATTS) K RECTANGULAR NONREPETITIVE WAVEFORM TJ =5 C PRIOR TO INITIAL PULSE PW, PULSE WIDTH (ms) Figure. Maximum Surge Power, TEMPERATURE COEFFICIENT (mv/ C) θvz IZT VZ, ZENER VOLTAGE (VOLTS) Figure. Zener Voltage To Volts I Z, ZENER CURRENT (ma) VZ, ZENER VOLTAGE (VOLTS) Figure 4. VZ =. thru Volts I Z, ZENER CURRENT (ma) VZ, ZENER VOLTAGE (VOLTS) Figure 5. VZ = thru 8 Volts Z Z, DYNAMIC IMPEDANCE (OHMS) IZ(dc) = ma ma 7 5 0mA iz(rms) = 0. IZ(dc) VZ, ZENER VOLTAGE (VOLTS) Figure 6. Effect of Zener Voltage Devices listed in bold, italic are Motorola preferred devices. Watt DC Power Data Sheet 7-56

19 SMB59BT Series θvz, TEMPERATURE COEFFICIENT (mv/ C) IZT Z Z, DYNAMIC IMPEDANCE (OHMS) k VZ =50V 9V 6V TJ = 5 C iz(rms) = 0. IZ(dc) V V 6.8V VZ, ZENER VOLTAGE (VOLTS) Figure 7. Zener Voltage 4 To 00 Volts IZ, ZENER TEST CURRENT (ma) Figure 8. Effect of Zener NOTE. ZENER VOLTAGE (V Z ) MEASUREMENT Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 5 C. NOTE. ZENER IMPEDANCE (Z Z ) DERIVATION Z ZT and Z ZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z (ac) = 0. I Z (dc) with the ac frequency = 60 Hz. Devices listed in bold, italic are Motorola preferred devices. Watt DC Power Data Sheet 7-57

20 Zener Voltage Regulator Diodes Surface Mounted Watt DC Power S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P A D B DIM A B C D H J K P S INCHES MIN MAX REF MILLIMETERS MIN MAX REF inches mm SMB Footprint C K P J H CASE 40A-0 PLASTIC (Refer to Section for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix MPQ (Units) Tape and Reel T ( inch).5k (Refer to Section for more information on Packaging Specifications.) Watt DC Power Data Sheet 7-58