54 5 Vol.54 No ACTA ASTRONOMICA SINICA Sep., ASIC (Application Specific Integrated Circuit) Á Ü Ö Êº Æ 4 pixel
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1 54 5 Vol.54 No ACTA ASTRONOMICA SINICA Sep., 2013 Ó Å Í Â Ú½ 1,2 1,2 1,2,3 1,2,3 (1 Ê Å µ ) (2 Ê µï Å ÇÕ µ ) (3 Ê µ ) ß Ä (CdZnTe) ±ÆÁ Ú ÜÇÌ Ò Ð Å Ð ½ ¾ ÜÜ Ä ³ Ü Æ Ü Æ ¾ Ñ Ä ÜÌÜ ³ Ü ÍÆ Ô ÐÌÜ ± ( ÑÎ Ë). Ä Å É ³Æ Î ÆÔ Ü Á ÌÜ 4 pixel 4pixel 8 pixel 8pixel Ä ( Å ¼ 5 mm 2 mm, Ø 2 mm 2mm, ¼ ¼ 0.15 mm 0.2 mm). ½ 137 Cs ± ¾ ÆÔ Ë ÐÏÐÌÜ Ü ASIC (Application Specific Integrated Circuit) Á Ü Ö Êº Æ 4 pixel 4 pixel Ä Ï ÆÔ Á ÙÙ 16 pixel ÜÅ Æ ÜÅ ØÆ 4.8%@662 kev. ³» ÁÅÌ Á ËÞÅ X à γ à ¹ÉÅ Ð ÀØ Å P111; Ç Å A 1 ĐÜ Í¾ Ñ Ë µ Đ ³Û «ØÓ ÛÛ ÐÚÅ Ð «³Å X γ ÐĐ ÞÞ ÐÐà ÐÓ Þ Ñ Đ ³ ¾ º ÂËÛĐ ³ Ðà ¼ ½É«² HPGe Þ Ñ Đ ³Ø¼ (Ü ËÃ), «Û NaI (Tl) Đ ³¾ Û X ßÔ À Û ³ ÐÃ Đ ³ Ð ¼ ½ Û «À ¹¹ Þ À ºÛ Đ 2 Ô Ï CdZnTe ² Ý Û Ñ µ Đ ³Æ CdZnTe (20%ZnTe, 80%CdTe) ² ¾ Õ (µ Ω cm) Ò (Cd Ò 48, Te Ô Ô ¾ Ê ÂÈÎÈà ٠( Ñ» ) Ê Ñ Ý ( , ) caimsh@pmo.ac.cn
2 468 Å 54 Ò 52) Þ Đ Ü Zn Î Û CdZnTe 1.4 ev ( ) È 2.26 ev (ÓÄ) Ï µó ÉØÐËÀÛĐ ³ Đ Â ß ¼ ½ X γ Đ ¼ 10 kev 6 MeV, ² Ó º 1 «ÛÝ Ñ Đ ³Û³Å Ð É«CdZnTe ËÀÛĐ ³¼ X γ ݾ Û «ËÛ Þ Û ÏÞ Û Đ ³ 1 Æ Ì Á ÎÖ ( = 25 C) Table 1 Physical properties of main semiconductor detectors (temperature = 25 C) Si Ge GaAs CdTe CdZnTe HgI Thallium bromide Lattice structure Cubic Cubic Cubic (ZB) Cubic (ZB) Cubic (ZB) Tetragonal Cubic (CsCl) Growth method C C CVD THM HPB, THM VAM BM Atomic number , 33 48, 52 48, 30, 52 80, 53 81, 35 Density/(g cm 3 ) Bandgap/eV Average ionization energy/ev Resistivity/ (Ω cm) Electron mobility/ (cm 2 (V s) 1 ) Hole mobility/ (cm 2 (V s) 1 ) >1 > , > CdZnTe ² 1 ÞÌ CdZnTe Đ ³ ² ͹ Ä Þݹ ØÓÞ ÛĐ ³ CdZnTe Đ ³ ½ Đ Û Ý 1 5 mm ë1 ĐÅ Fig.1 The CdZnTe crystals ÀÍ Û CdZnTe Đ ³ÛºÝ Û ¼ Û«½ ¼Đ ³ À CdZnTe Đ ³Û«Ä ¼ À ½º ÛÒ Ä Û ÀÁ ¹ Û Á Û ¼Đ
3 5 Áß«ĐÅ µýñ» 469 ³ ÛÛ«½ Û ²À Ê Ð Í Õ ³ÍÀ Ä Û Í² Û ¹ ½ÌÅÍÛÐà (4 pixel 4 pixel, 8 pixel 8 pixel ), pixel 4 pixel (Ú) 8 pixel 8 pixel ( ) ÝĐÅ (² ) Fig. 2 The 4 pixel 4 pixel (left) and 8 pixel 8 pixel (right) CdZnTe arrays (before bonding) 3 Ô «Æ ± Û¾ CdZnTe Đ ³ÛËÛÍÂÝ ² ÌÅ Ó ËÛ Đ Û ÐÍ ĐÞÍ 3.1 ¼ Ý «½ ÛÏÄ É± À É Í CdZnTe ² ÅÝ (110) ι ² «Çß È ÈºÝ À ²Ò Ö» λ «Þ Ó Ä Û ² ÄÀ Ý ÌÅ Û CdZnTe ²»«Å ¾Ä Ô» ¹ ³ [1]. 3.2 ¼ ² Û Ó Đ Ý «Û ÌÅÛ CdZnTe ² ¼ 10% Û H 2 O 2 Ü Ó «¾Ä ÔÇ ¹½³ ÐÚÛ - ÐĐºÝÍØ Ã Û² Æ ÎÞ Ó Ä «NHFH 4 /H 2 O 2 Ü ² λ Ó ÓÛ Û¼ ² ºÝÛ ½ ºÝÛ Þ Í ÓÌŠɲ Û 1 2 Ò 3.3 ¼ ËÛ Û Ý Ð ÀÐ Û» Õ ÖÉ Ñ Û º À Û½µ ÏÒ À p Ë Ñ ÏÒØ Ñ Û ÏÒ ÖÔ «Û Cu Ag Pt Ni. ÞÐ Þ «Û p Ë CdZnTe Ò Cu Ag Pt Ni ÞÛ ÐÃ Ñ Đ ³ Û [2]. 3.4 ¼ ¾ «ÓÝ Û CdZnTe Đ ³ À Û Ý ¹ É
4 470 Å 54 Ð Û Đ Đ ³Û ¼ÐÃ Đ ³ ØÓ Û «½Ø Û Ë ËĐ ³ ÒÛ Đ ³ Ê É ¾ Û ¾ Û«Đ É ASIC À Û Đ ±Ú Æ Đ ÀËÛÐà 3 ÞÌ 3 4 pixel 4 pixel (Ú) 8 pixel 8 pixel ( ) Fig.3 The pixel sizes of 4 pixel 4 pixel (left) and 8 pixel 8 pixel (right) templates 3.5 µ Ð «Û ÐÍ Ê À [2], 4 ÞÌ À Û Đ ÍÀÛ ÀÀ «ß I/O Ü ÐÏ À Ò Đ ² ĐËÛ Ç À ¾ À ĐÆ À «Þ Đ I/O Ò Û Ë 4 (Ú) Ð Â ( ) Í Fig.4 The schematic diagram of wire bonding (left) and flip chip bonding (right) ÝÞÞÐÛÐà ËÛ Đ ÅÓ «À Đ Û Ê«¼ ĐĐÐĐ ÞËÛÛ Æ ÛÐà 5 ÞÌ» 4 pixel 4 pixel 8 pixel 8 pixel Û (» 5 mm 2 mm, 2 mm 2 mm, » 0.15 mm 0.2 mm).
5 5 Áß«ĐÅ µýñ» 471 Fig pixel 8 pixel (Ú) 4 pixel 4 pixel ( ) ĐÅ (² ) The 8 pixel 8 pixel (left) and 4 pixel 4 pixel (right) CdZnTe arrays (after bonding) 4 ٠ĺ ÐÃ Đ ³Þ ÉÛ ÕÇÊ Đ ³ Å «Û CMOS (Complementary Metal Oxide Semiconductor) ĐÛ ASIC Û Ý Ó É ÉÀ Ë Û É ¹ «Đ ³ É É¹ Û É «IDEAS Õ Û VA32TA5 À 6 ÞÌ ¼À 32 Đ Õ À VA (¹ Đ ÌÅ) TA (¹ Ë Ê Û À) VA Ø ß Ê ³ Ò ÀÍ Ä Þ TA Ø ÙÀÍ» (Discriminator) Ë Ú ÉÞÖÀ Û ÕÇ Þ ÊÛ ÅÄ TA ÉË Ê «¹ Ë 6 VA32TA5 ÝÝ ÇÍ 1 Fig.6 The schematic diagram of the working principle of VA32TA5 1 VA32TA5 À Û Æ¹ º 2 ÞÌ 1
6 472 Å 54 2 VA32TA5 Ñ Ö Table 2 The performance of VA32TA5 Temperature Load capacitance Leakage current RMS noise of RMS noise of / C /pf /na fast shaping/e slow shaping/e Õ«È VA32TA5 Û ¼À Û «Û ÕÇ Í Ê ADC (Analog digital converter) ÉØÓ VA32TA5 Û Æ¹ Ê Ê (AFG3252) ÀÛÕÇ Ý 1 pf Û ÀÛ Û Q = C V, C V 7 Ë Þ¹ ÛÞ ÓÞ¹ ADC ÛÕÒ ÛÓ ADC ÛÕ fc/bin. Ð É VA32TA5 Û Ó 70 fc Ð 7 Ì Fig.7 The results of linear test 4.2 Å Û Ø Û ÕÛÛ Û VA32TA5 ÛÛ ½ VA32TA5 À Ù Ä Ê«Ý ÜÞÛË Ê À ÛÛ Û Ë¼ ÐØÓ ÕÛ Û 8 8 ÕÛ 9 Þ 32 ÕÛÛ Ë Û Û
7 5 Áß«ĐÅ µýñ» 473 Ô (RMS) É Þ ( fc/bin). Count Bin 8 Æ 8 ÝÝ ( Ý RMS 77 Bin) Fig. 8 The baseline noise distribution in No.8 channel (RMS = 77 Bin) Bin Channel Fig. 9 9 ß 32 Æ ÝÝ The baseline noise of all 32 channels 622 kev ÛßÔ CdZnTe ÉÛ 40 fc Ù Þ ÖÔĐ ³Ø¼ 5 Ô «ÆÝ ² ÀÞ«ÛÐà ÛÆ 4 pixel 4 pixel 16 pixel 2 mm/pixel 5 mm 137 Cs (@662 KeV), «VA32TA5 À Û É ¹ ØØ 16 pixel Û CdZnTe Û Đ 10 ÞÌ
8 474 Å pixel 4 pixel ĐÅ ÅÝ 16 pixel ß ÚÝ«Ñ Fig. 10 The energy resolution measured by 16 pixel corresponding to the 4 pixel 4 pixel CdZnTe array
9 5 Áß«ĐÅ µýñ» Fig. 10 Continued
10 476 Å 54 CdZnTe ³ 11. CdZnTe Û³ VA32TA5 Û ßĐ Õ º 3 ÞÌ 11 CdZnTe Fig. 11 The pixel number of the 4 pixel 4 pixel CdZnTe array 3 4 pixel 4pixel Ò 16 pixel Ê Table 3 The energy resolution measured by 16 pixel corresponding to the 4 pixel 4 pixel array Detector channel Corresponding electronics channel Energy resolution/% Ý Ð ² ²² Đ ³ ¼ Û Ê ÂÛ É ÊÛ Đ ³ Ø ²²Û Đ ³ º Ð É ÉÛ %@662 kev, ²²Û %@662 kev.
11 5 Áß«ĐÅ µýñ» Ô «³Å ÞÐĐ ¹ Ø Ä¾ «Ä À Û Ñ Đ ³¹ Ì InFOCµS (International Focusing Optics Collaboration for µcrab Sensitivity) Ò¾ pixel ÛÐà 330 µm 330 µm 2 mm, 2.3 kev@22.1 kev, HEFT (High Energy Focusing Telescope) Ò ËĐ ³¾ µm 600 µm 2 mm 780 ev@60 kev, ev ÕÚÀ 10 mm 10 mm 6 mm Û Ë Đ ³ È ºÕ ؼ² À É ½ ØØ Û «ÐÃ Đ ³ Ð Û Ú Û ÝÀ ³ ÉÛ ÎÀ Ã Ä Û ¾ Û ¼ Ã Û «± à ŠŠ[1] κ ß 2006, 35: 715 [2] Ý Å ÈÖ ß «2004, 35: A Research on CdZnTe Array Detector CAI Ming-sheng 1,2 GUO Jian-hua 1,2 XIE Ming-gang 1,2,3 ZHENG Chun-xiao 1,2,3 (1 Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing ) (2 Key Laboratory of Dark Matter and Space Astronomy, Chinese Academy of Sciences, Nanjing ) (3 University of Chinese Academy of Sciences, Beijing ) ABSTRACT The CdZnTe array detector is a new type of semiconductor detector, and it has been developing rapidly in recent years. It has some characteristics of high spatial resolution, high energy resolution, and it can work at room temperature. This article describes the physical characteristics and the working principle of the CdZnTe detector. It also introduces the production process of the CdZnTe array detector, including the pretreatment of the chips, passivation, ohmic electrode production, array template selection, and array package process selection (micro-interconnect). For evaluating the performance of the detector, the authors produced a 4 pixel 4 pixel CdZnTe array and an 8 pixel 8 pixel CdZnTe array (The thicknesses are 5 mm and 2 mm, respectively. The pixel size is 2 mm 2 mm. The gaps are 0.15 mm and 0.2 mm, respectively.) with cooperation partner successfully. A multi-channel electronic readout system based on the ASIC (Application Specific Integrated Circuit) chip is used for the charge measurement of the 4 pixel 4 pixel array of CdZnTe. The 16-pixel spectrum and the corresponding energy resolution are obtained with the 137 Cs radiation source. Among the results of each pixel, the best resolution is 4.8%@662 kev. Key words spectroscopy instrumentation: detectors, sun: X-rays, gamma rays, techniques: imaging
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