FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16522 Generic Copy
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1 Generic Copy Issue Date: 24-Sep-2010 TITLE: Final Notification for Transfer of the Bipolar Power Epi Base, Bipolar Power Base Technologies, TVS (Transient Voltage Suppressor) Arrays and Ultrafast Rectifier from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia) PROPOSED FIRST SHIP DATE: 24-Dec-2010 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or following Contact Product Engineers: FPCN Contact person by Affected Technology: Bipolar Power Epi Base Farrah Awang Bipolar Power Base Technology Farrah Awang Ultrafast Rectifier Technology Raja Roziah TVS Array Huey Shan Wong SAMPLES: Contact your local ON Semiconductor Sales Office or contacts listed above. ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact DESCRIPTION AND PURPOSE: ON Semiconductor is notifying customers of its plan to transfer Bipolar Power Epi Base and Bipolar Power Base Technologies and Ultrafast Rectifier from ON Semiconductor ZR Fab in Phoenix (USA) to ON Semiconductor ISMF Fab in Seremban (Malaysia). The ISMF facility is an ON Semiconductor owned wafer fab that has been producing products for ON Semiconductor since Several existing technologies within ON Semiconductor s product families are currently sourced from ISMF, including Zener Diodes, Small Signal Diodes, Small Signal Bipolar Transistor, and USB array filter products. ON Semiconductor Seremban Wafer FAB is an internal factory that is TS16949, ISO-9001 and ISO certified. Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 1 of 7
2 Qualification tests are designed to show that the reliability of transferred devices will continue to meet or exceed ON Semiconductor standards. Products listed in this final PCN should be transferred to ON Semiconductor ISMF Fab in Seremban (Malaysia) starting 13th December After 13th December 2010, customer may receive products from either facility. QUALIFICATION PLAN: Reliability testing was performed on qualification vehicles chosen based on die size, voltage rating, and run rates. RELIABILITY DATA SUMMARY FOR BIPOLAR POWER EPI BASE: Package: Dpak Qual Vehicles: MJD42CG HTRB TA=150C,80% Rated Voltage 1008 hrs 0/80 Autoclave+PC Ta=121C RH=100% ~15 psig 96 hrs 0/80 H3TRB+PC Ta=85C RH=85% 1008 hrs 0/80 IOL+PC Ta=25C, Delta TJ = 100 C, cyc 0/80 TC+PC Ta= -65 C to 150 C 1000 cyc 0/80 DPA post TC 0/2 DPA post H3TRB 0/2 Package: Dpak MJD122G HTRB TA=150C,80% Rated Voltage 1008 hrs 0/160 Autoclave+PC Ta=121C RH=100% ~15 psig 96 hrs 0/160 H3TRB+PC Ta=85C RH=85% 1008 hrs 0/160 IOL+PC Ta=25C, Delta TJ = 100 C, cyc 0/160 TC+PC Ta= -65 C to 150 C 1000 cyc 0/160 DPA post TC 0/4 DPA post H3TRB 0/4 Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 2 of 7
3 RELIABILITY DATA SUMMARY FOR BIPOLAR POWER POWER BASE: Qual Vehicles: MJW21194G Package: TO247 HTRB Ta=150C,80% Rated Voltage 504 hrs 0/160 Autoclave+PC Ta=121C RH=100% ~15 psig 96 hrs 0/160 H3TRB+PC Ta=85C RH=85% 504 hrs 0/160 IOL+PC Ta=25C, Delta TJ = 100 C, 3000 cyc 0/160 Ton/off = 5 min. TC+PC Ta= -65 C to 150 C 1000 cyc 0/160 DPA post TC 0/4 MJ21193G Package: TO-3 HTRB TA=150C,80% Rated Voltage 1008 hrs 0/80 IOL+PC Ta=25C, Delta TJ = 100 C, 5000 cyc 0/77 TC+PC Ta= -65 C to 150 C 1000 cyc 0/77 RELIABILITY DATA SUMMARY FOR ULTRAFAST RECTIFIER: Package: 3A Axial Qual Vehicle: MUR4100E Rectifier Test Condition Interval Results HTRB Tj=150C,80% Rated Voltage 168 hrs 0/231 Autoclave Ta=121C RH=100% ~15 psig 96 hrs 0/231 H3TRB Ta=85C RH=85% 1008 hrs 0/231 IOL Ta=25C, Delta TJ = 100 C, cyc 0/231 TC Ta= -65 C to 150 C 1000 cyc 0/231 Package: TO220 MUR8100E Rectifier Test Condition Interval Results HTRB Tj=150C, 80% Rated Voltage 168 hrs 0/80 Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 3 of 7
4 RELIABILITY DATA SUMMARY FOR TVS Array: Package: SO-8 Qual Vehicles: NUP4201DR2G Test: Conditions: Interval: Results HTRB Ta=150C,80% Rated Voltage 504 hrs 0/231 Autoclave+PC Ta=121C RH=100% ~15 psig 96 hrs 0/231 HAST+PC Ta=130C RH=85% 96 hrs 0/231 TC+PC Ta= -65 C to 150 C 1000 cyc 0/231 DPA post TC 0/6 DPA post HAST 0/6 ELECTRICAL CHARACTERISTIC SUMMARY: Available upon request CHANGED PART IDENTIFICATION: Affected products from ON Semiconductor with date code 1051 representing WW51, 2010 and greater may be sourced from either the ISMF Fab in Seremban (Malaysia) or the ZR Fab in Phoenix (USA). Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 4 of 7
5 List of affected General Parts Ultrafast Rectifier: MURS480ET3G MUR180EG MUR880EG MUR480EG MUR180ERLG MUR8100EG MUR480ERLG MUR1100EG MUR8100EH MUR480ESG MUR1100ERLG MURC8100EWP MUR4100EG MUR2100EG SUR84100ERLG MUR4100ERLG MUR2100ERLG Bipolar Power Epi Base Technology: 2N3055AG BD810G MJF31CG 2N3055G BDV64BG MJF32CG 2N3442G BDV65BG MJF6388G 2N3771G BDW42G MJH6284G 2N3772G BDW46G MJH6287G 2N3773G BDW47G NJV2N6045G 2N4918G BDX34BG NJV2N6107G 2N4919G BDX34CG NJV2N6109G 2N4920G BDX54BG NJVMJ11028G 2N4921G BDX54CG NJVMJB42CT4G 2N4922G MJ11012G NJVMJD112T4G 2N4923G MJ11015G NJVMJD117T4G 2N5190G MJ11016G NJVMJD122T4G 2N5191G MJ11028G NJVMJD128T4G 2N5192G MJ11030G NJVMJD148T4G 2N5194G MJ11032G NJVMJD2955T4G 2N5195G MJ11033G NJVMJD31CT4G 2N5302G MJ14002G NJVMJD32CT4G 2N5684G MJ15001G NJVMJD41CT4G 2N5686G MJ15015G NJVMJD42CRLG 2N5883G MJ15016G NJVMJD42CT4G 2N5884G MJ2955G NJVTIP122G 2N5885G MJ4502G NJVTIP31CG 2N5886G MJ802G NJVTIP32BG 2N6034G MJB41CG NJVTIP32CG 2N6035G MJB41CT4G NJVTIP36CG 2N6036G MJB42CT4G NJVTIP41CG 2N6038G MJC11015WP NJVTIP42CG 2N6039G MJC11016WP SJD112T4G 2N6040G MJD112-1G SJD127T4 2N6042G MJD112G SJD127T4G 2N6043G MJD112RLG SJD32CT4 2N6045G MJD112T4G SJD32CT4G 2N6052G MJD117-1G TIP100G 2N6107G MJD117G TIP101G 2N6109G MJD117RLG TIP102G 2N6111G MJD117T4G TIP106G 2N6284G MJD122G TIP107G 2N6286G MJD122T4G TIP110G Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 5 of 7
6 Bipolar Power Epi Base Technology: 2N6287G MJD127G TIP111G 2N6288G MJD127T4 TIP112G 2N6292G MJD127T4G TIP115G 2N6487G MJD128T4G TIP116G 2N6488G MJD148T4 TIP117G 2N6490G MJD148T4G TIP120G 2N6491G MJD2955-1G TIP121G 2N6667G MJD2955G TIP122G BD179G MJD2955T4G TIP125G BD180G MJD3055G TIP126G BD234G MJD3055T4G TIP127G BD237G MJD31C1G TIP140G BD241CG MJD31CG TIP141G BD242BG MJD31CRLG TIP142G BD242CG MJD31CT4G TIP147G BD243CG MJD31T4G TIP2955G BD244BG MJD32CG TIP29AG BD244CG MJD32CRLG TIP29BG BD435G MJD32CT4 TIP29CG BD436TG MJD32CT4G TIP3055G BD437G MJD32RLG TIP30CG BD437TG MJD32T4G TIP31AG BD438G MJD41CRLG TIP31BG BD439G MJD41CT4G TIP31CG BD440G MJD42C1G TIP31G BD441G MJD42CG TIP32AG BD442G MJD42CRLG TIP32BG BD675AG MJD42CT4G TIP32CG BD675G MJD6039T4G TIP32G BD676AG MJE2955TG TIP33CG BD676G MJE3055TG TIP35AG BD677AG MJE371G TIP35CG BD677G MJE4353G TIP36AG BD678AG MJE700G TIP36CG BD678G MJE702G TIP41AG BD679AG MJE703G TIP41BG BD679G MJE800G TIP41CG BD680AG MJE802G TIP42AG BD680G MJE803G TIP42BG BD681G MJF122G TIP42CG BD682G MJF127G TIP42G BD682TG MJF2955G BD809G MJF3055G Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 6 of 7
7 Bipolar Power Base Technology: MJ11021G MJC11021WP MJL21195G MJ11022G MJC11022WP MJL21196G MJ15003G MJC15003WP MJL3281AG MJ15004G MJC15004WP MJW21193G MJ15022G MJE4343G MJW21194G MJ15023G MJH11017G MJW21195G MJ15024G MJH11019G MJW21196G MJ15025G MJH11020G MJW3281AG MJ21193G MJH11021G NJL3281DG MJ21194G MJH11022G NJW21193G MJ21195G MJL21193G NJW21194G MJ21196G MJL21194G NJW3281G TVS Array: LC03-6R2G SL05T1G SRDA05-4R2G NUP4106DR2G SL15T1G SL12T1G NUP4201DR2G SL24T1G SRDA3.3-4DR2G Issue Date: 24-Sep-2010 Rev. 06-Jan-2010 Page 7 of 7
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