ELCT 503: Semiconductors. Fall Lecture 01: Introduction

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Transcription:

ELCT503 Semiconductors Fall 2014 Lecture 01: Introduction Dr. Hassan Mostafa د. حسن مصطفى hmostafa@aucegypt.edu

Course Outline Course objectives This course is basically about the major microelectronics devices that are extremely used in the last 60 years. This includes diodes and transistors

Course contents Introduction Semiconductors physics and basics Physics and circuit modeling (dc & ac) of: PN junction BJT transistor MOSFET transistor

Course Outline Instructor: Dr. Hassan Mostafa» hmostafa@aucegypt.edu Textbook: S. M. Sze, Semiconductor Devices: Physics and Technology, Wiley & So., ISBN 0471333727, 2001 Course Websire http:// scholar.cu.edu.eg/hmostafa/classes/elct-503 Lecture time: Mondays 1 st slot

References H. Craig Casey (1998). Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors, Wiley & So., ISBN 0471171344. B. Streetman, S. Banerjee (1999). Solid State Electronic Devices, Prentice Hall, ISBN 0130255386. R. F. Pierret (1995). Semiconductor Device Fundamentals, Prentice Hall, ISBN 0201543931. D. A. Neamen (2003). Semiconductor physics and devices: Basic principles, McGraw-Hill, ISBN~0072321075. T. F. Bogart (1997). Electronic devices and circuits, Prentice Hall, ISBN~0133937607.

Course Grading method % Quizzes 15% Lab performance 10% Lab project / presentation 15% Midterm exam 20% Final exam 40%

Prerequisites ELCT 301: ELCT 401: COMM 402: PHYS 202: PHYS 301: Electrical Circuits I Electrical Circuits II Electromagnetics Theromdynamics Atom Physics

semiconductor devices Semiconductor devices are electronic devices that are fabricated using semiconductor materials such as Silicon, Germanium, and Gallium Arsenide. Semiconductor devices are available as discrete components (available on shelf in electronics stores) or can be integrated with a large number of similar devices onto a single chip, called an Integrated Circuit(IC).

Complementary Metal Oxide Semiconductor (CMOS) CMOS is a technology for constructing IC s. This technology is used in microprocessors, microcontrollers, Memories, and other digital logic circuits. Microprocessor Microcontroller RAM

Information age The ability to fabricate billions of individual components (transistors, resistors, capacitors, etc.) on a silicon chip with an area of a few cm 2 has enabled the information age. Shrinking geometries permit more devices to be placed in a given are of silicon. It is widely expected that these historical trends will continue for at least another 5-10 years, resulting in Chips that contain tens of billions of components.

First Transistor from Bell Labs (1947)

Kilby first IC (1958)

First monolithic integrated circuit 1961 Picture shows a flipflop circuit containing 6 devices, produced in planar technology. Source: R. N. Neyce, Semiconductor device-and-lead structure, U.S.Patent 2,981,877

first microprocessor 1971 Picture shows a four-bit microprocessor Intel 4004. 10 μm technology 3 mm 4 mm 2300 MOS-FETs 108 khz clock frequency Source: Intel Corporation

Pentium IV processor 2001 Picture shows a ULSI chip with 32-bit processor Intel Pentium 4. 0.18μm CMOS technology 17.5 mm 19 mm 42 000 000 components 1.6 GHz clock freuqncy Source: Intel Corporation

Moore s Law In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 to 14 months (i.e., grow exponentially with time). Amazingly visionary million transistor/chip barrier was crossed in the 1980 s. 2300 transistors, 1 MHz clock (Intel 4004) - 1971 16 Million transistors (Ultra Sparc III) 42 Million, 2 GHz clock (Intel P4) - 2001 Xilinx currently holds the "world-record" for an FPGA chip containing 6.8 billion transistors

Moore s Law in Microprocessors Transistors on microprocessors double every 2 years 1,000,000 K 1 Billion Transistors 100,000 10,000 1,000 100 10 Pentium III Pentium II Pentium Pro Pentium i486 i386 80286 8086 1 1975 1980 1985 1990 1995 2000 2005 2010 Projected Source: Intel Courtesy, Intel

Moore s law scaling

Moore and CMOS Scaling CMOS scaling will not stay forever, but, forever can be delayed Moore, 2003

Moore s Law Challenges Defects during the manufacturing process (a single defect larger than some critical size usually means that the chip will not function correctly) IC manufacturing requires low defect densities (Clean Rooms)

Clean Rooms Clean room facility: Particle free walls, furniture, and accessories must be used Airflow through 0.3 microns filters

Clean Rooms Clean room facility: Main function of clean rooms is control of particle contamination Requires control of air flow, water and chemical filtrations, human protocol Class N clean room means fewer than N particles (>0.5 µm) in 1 cubic foot of air Classes types: Class 10,000 Class 1,000 Class 100 Class 10

Clean Rooms Clean room facility: Class 10,000 Class 1,000 Class 100 Class 10

Electronics Design Flow Design the circuit using electronic components Simulate your circuit using Spice Adjust the circuit till the simulation results are correct Draw your layout Simulate your layout (with parasitic) using Spice Adjust the circuit/layout till the simulation results are correct Send your design for tape-out Test your chip If not working Repeat

Model of semiconductor device Purpose of model: geometry for layout design current/voltage for electrical analysis Used formalism: mathematical equations current voltage characteristics equivalent electric circuit

PSpice models Model line: Pattern:.MODEL MODNAME D(<parameter list>) Example:.MODEL PNDIODE1 D(IS=1.1E-15) Model parameters Examples: IS, RS, VJ, EG, XTI, BV, IBV, TT, CJ0, Element line: Pattern: Dxxxxxx N+ N- MODNAME <area><off><> Example: D5 15 16 PNDIODE1

First letter of the element known R resistor C capacitor L inductor K mutual inductor E v-controlled v-source F i-controlled i-source G v-controlled i-source H i-controlled v-source I independent i-source V independent v-source T transmission line semiconductor devices D diode J J-FET M MOS-FET Q bipolar transistor B GaAs MES-FET

DC model versus AC model Every electronic component has dc model and ac model dc models assume that all the inputs are dc ac models assume that all the inputs are ac dc = large signal ac = small signal Superposition