technický list 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes TECHNICAL DATA str 1
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1 Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: technický list TECHNICAL DATA Watt Surmetic 4 Silicon Zener Diodes This is a complete series of Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this is in an axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions. Specification Features: Up to 8 Watt Surge 8.3 ms Maximum Limits Guaranteed on Seven Electrical Parameters Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode MOUNTING POSITION: Any WEIGHT:.7 gram (approx) WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea N333B through N388B WATT ZENER REGULATOR DIODES 3.3 VOLTS CASE 7 PLASTIC MAXIMUM RATINGS DC Power TL = 7 C Lead Length = 3/8 Derate above 7 C Rating Symbol Value Unit PD Operating and Storage Junction Temperature Range TJ, Tstg 6 to + C 4 Watts mw/ C PD, MAXIMUM POWER DISSIPATION (WATTS) L = 3/8 L = L = /8 L = LEAD LENGTH L = TO HEAT SINK L = (SEE FIGURE ) TL, LEAD TEMPERATURE ( C) Figure. Power Temperature Derating Curve str
2 technický list Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: N333B through N388B ELECTRICAL CHARACTERISTICS (TA = C unless otherwise noted, VF =. IF = A for all types) JEDEC Type No. (Note ) Nominal Zener Voltage IZT (Note ) Test IZT Max Zener Impedance (Note ) IZK = (Note ) Max Reverse Leakage IR VR Max Surge ir, Amps (Note 3) Max Voltage Regulation VZ, Volt (Note 4) Maximum Regulator IZM (Note ) N333B N334B N33B N336B N337B N338B N339B N34B N34B N34B N343B N344B N34B N346B N347B N348B N349B N3B N3B N3B N33B N34B N3B N36B N37B N38B N39B N36B N36B N36B N363B N364B N36B N366B N367B N368B N369B N37B N37B N37B N373B N374B N37B N376B N377B N378B N379B N38B N38B N38B (continued) str
3 Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: technický list N333B through N388B ELECTRICAL CHARACTERISTICS continued (TA = C unless otherwise noted, VF =. IF = A for all types) JEDEC Type No. (Note ) Nominal Zener Voltage IZT (Note ) Test IZT Max Zener Impedance (Note ) IZK = (Note ) Max Reverse Leakage IR VR Max Surge ir, Amps (Note 3) Max Voltage Regulation VZ, Volt (Note 4) Maximum Regulator IZM (Note ) N383B N384B N38B N386B N387B N388B NOTE. TOLERANCE AND TYPE NUMBER DESIGNATION The JEDEC type numbers shown indicate a tolerance of ±%. NOTE. ZENER VOLTAGE (V Z ) AND IMPEDANCE (Z ZT & Z ZK ) Test conditions for zener voltage and impedance are as follows: I Z is applied 4 ± ms prior to reading. Mounting contacts are located 3/8 to / from the inside edge of mounting clips to the body of the diode. (T A = C +8, C). NOTE 3. SURGE CURRENT (i r ) Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 6 may be used to find the maximum surge current for a square wave of any pulse width between ms and ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and V zeners, are shown in Figure 7. Mounting contact located as specified in Note 3. (T A = C +8, C.) NOTE 4. VOLTAGE REGULATION ( V Z ) Test conditions for voltage regulation are as follows: V Z measurements are made at % and then at % of the I Z max value listed in the electrical characteristics table. The test current time duration for each V Z measurement is 4 ± ms. (T A = C +8, C). Mounting contact located as specified in Note. NOTE. MAXIMUM REGULATOR CURRENT (I ZM ) The maximum current shown is based on the maximum voltage of a % type unit, therefore, it applies only to the B-suffix device. The actual I ZM for any device may not exceed the value of watts divided by the actual V Z of the device. T L = 7 C at 3/8 maximum from the device body. NOTE 6. SPECIALS AVAILABLE INCLUDE: Nominal zener voltages between the voltages shown and tighter voltage tolerance such as ±% and ±%. Consult factory. TEMPERATURE COEFFICIENTS θvz, TEMPERATURE COEFFICIENT (mv/ I ZT RANGE VZ, ZENER IZT (VOLTS) Figure. Temperature Coefficient-Range for Units 3 to θvz, TEMPERATURE COEFFICIENT (mv/ I ZT 3 3 RANGE VZ, ZENER IZT (VOLTS) Figure 3. Temperature Coefficient-Range for Units to str 3
4 technický list Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: N333B through N388B θjl (t, D), TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD ( C/W) D =. D =. D =. D =. D =.. D =... NOTE: BELOW. SECOND, THERMAL NOTE: RESPONSE CURVE IS APPLICABLE NOTE: TO ANY LEAD LENGTH (L). DUTY CYCLE, D = t/t SINGLE PULSE TJL = θjl(t)ppk REPETITIVE PULSES TJL = θjl(t, D)PPK.... t, TIME (SECONDS) PPK t t Figure 4. Typical Thermal Response L, Lead Length = 3/8 Inch θ JL, JUNCTION-TO-LEAD THERMAL RESISTANCE ( C/W) 4 3 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD L, LEAD LENGTH TO HEAT SINK (INCH) Figure. Typical Thermal Resistance L L i r, PEAK SURGE CURRENT (AMPS) *SQUARE WAVE PW = ms* PW = ms* PW = 8.3 ms*. PW = ms* NOMINAL VZ (V) Figure 6. Maximum Non-Repetitive Surge versus Nominal Zener Voltage (See Note 3) i r, PEAK SURGE CURRENT (AMPS) 3. VZ = 3.3 V VZ = V. PLOTTED FROM INFORMATION GIVEN IN FIGURE 6. PW, PULSE WIDTH (ms) Figure 7. Peak Surge versus Pulse Width (See Note 3) I Z, ZENER CURRENT () TC = C VZ, ZENER VOLTAGE (VOLTS) T = C Figure 8. Zener Voltage versus Zener VZ = 3.3 thru str 4
5 Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: technický list N333B through N388B T = C I Z, ZENER CURRENT () I Z, ZENER CURRENT () VZ, ZENER VOLTAGE (VOLTS) Figure 9. Zener Voltage versus Zener VZ = thru VZ, ZENER VOLTAGE (VOLTS) Figure. Zener Voltage versus Zener VZ = 8 thru APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = θla PD + TA θla is the lead-to-ambient thermal resistance and PD is the power dissipation. Junction Temperature, TJ, may be found from: TJ = TL + TJL TJL is the increase in junction temperature above the lead temperature and may be found from Figure 4 for a train of power pulses or from Figure for dc power. TJL = θjl PD For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ ( TJ) may be estimated. Changes in voltage, VZ, can then be found from: V = θvz TJ θvz, the zener voltage temperature coefficient, is found from Figures and 3. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 4 should not be used to compute surge capability. Surge limitations are given in Figure 6. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 6 be exceeded. str
6 technický list Dodavatel: GM electronic, spol. s r.o., Křižíkova 77, 86 Praha 8 zákaznická linka: N333B through N388B Zener Voltage Regulator Diodes Axial Leaded Watt Surmetic 4 B F D K A NOTE:. LEAD DIAMETER & FINISH NOT CONTROLLED WITHIN DIM F. DIM A B D F K INCHES MIN MAX MILLIMETERS MIN MAX K F CASE 7- PLASTIC (Refer to Section for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix MPQ (Units) Tape and Reel Tape and Ammo TA K (Refer to Section for more information on Packaging Specifications.) RL 4K str 6
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3.5x3.5 mm SMD CHIP LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Part Number: AA3535SEL1Z1S Hyper Orange Features White SMD package, silicone resin. Low
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3.5x3.5 mm SMD CHIP LED LAMP PRELIMINARY SPEC ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features White SMD package, silicone resin. Low thermal resistance. Compatible
More information500mW, 2% Tolerance SMD Zener Diode
500mW, 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface mount device type - Moisture sensitivity level - Pb free and RoHS compliant - V Z Tolerance Selection
More information300 Zener rise operating resistance RZK IZ = 0.5 ma. 300 Reverse current A Temperature coefficient of zener voltage *3 SZ IZ = 2 ma
Silicon epitaxial planar type For constant voltage / For surge absorption circuit DZJ390 in SSMini type package Features Excellent rising characteristics of zener current Iz Low zener operating resistance
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TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Equipment Constant Regulation Transient Suppressors Unit: mm Average power dissipation: P = 0.7 W Zener voltage:
More informationMMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series. Zener Voltage Regulators. 500 mw, Low I ZT SOD 123 Surface Mount
MMSZ4xxxTG Series, SZMMSZ4xxxTG Series Zener Voltage Regulators 5 mw, Low I ZT SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package.
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Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V WM (uni-directional) 5.8 V to 459 V V WM (bi-directional) 5.8 V to 185 V V BR (uni-directional) 6.8 V to 540 V V BR (bi-directional)
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Features: Glass Passivated Junction Low Incremental Surge Resistance, Excellent Clamping Capability Low Profile Package With Built-In Strain Relief for Surface Mounted Applications 600W Peak Pulse Power
More informationPart Number Compliance Case Packaging (Type Number)-7* Commercial SOD323 3,000/Tape & Reel
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More informationJIEJIE MICROELECTRONICS CO., Ltd
JIEJIE MICROELECTRONICS CO., Ltd 20KP Series 20KW Transient Voltage Suppressor Rev.2.3 DESCRIPTION: The 20KP series of high current uni/bi-directional transient suppressors are designed for A.C. line protection
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Available Surface Mount 36,000 Watt Transient Voltage Suppressor DESCRIPTION These high power 36 kw rated transient voltage suppressors in a surface mount package are provided with design features to minimize
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SILICON ZENER DIODE oltage 3.6~68 Power 1.5 W Features Silicon planar Zener diode Low profile surface-mount package Low leakage current Excellent stability High temperature soldering: 260 o C/ seconds
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3.5x2.8 mm SMD CHIP LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Part Number: KA-3529ASYLZ4S Super Bright Yellow Features Single color. Suitable for all
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T-1 (3mm) SOLID STATE LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Part Number: WP7104VW1C White Features Low power consumption. Popular T-1 diameter package.
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More informationA-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD.
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Description The transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD), electrical
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To our customers, Old Company Name in Catalogs and Other Documents On April st, 00, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over
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Pb The ML Series family of Transient Voltage Surge Suppression devices is based on the Littelfuse Multilayer fabrication technology. These components are designed to suppress a variety of transient events,
More informationML Varistor Series. Surface Mount Varistors
The ML Series family of Transient Voltage Surge Suppression devices is based on the Littelfuse Multilayer fabrication technology. These components are designed to suppress a variety of transient events,
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Surface Mount Transient Voltage Suppressor Diodes Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Available in uni-directional 400
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