Product Specifications. General Information. Order Information: VL47B5663A-F8SE-I REV: 1.0. Pin Description PART NO.:

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1 PART NO.: VL47B5663AF8SEI REV: 1.0 General Information 2GB 256Mx64 DDR3 SDRAM NONECC UNBUFFERED SODIMM 204PIN Description The VL47B5663A is a 256Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with thermal sensor in an 8pin MLF package. This module is a 204pin smalloutline dual inline memory module and is intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM. Features Pin Description 204pin, smalloutline dual inline memory module (SODIMM) Fast data transfer rate: PC38500 VDD = VDDQ = 1.5V +/0.075V JEDEC standard 1.5V +/0.075V I/O (SSTL_15 compatible) VDDSPD = 3.0V to 3.6V Eight internal component banks for concurrent operation 8bit prefetch architecture Bidirectional differential datastrobe Nominal and dynamic ondie termination (ODT) calibration support Programmable CAS# latency: 7 (DDR31066) Programmable burst; length (8) Average refresh period 7.8 us Asynchronous reset Flyby topology On board terminated command, address, and control bus Serial presence detect (SPD) EEPROM with thermal sensor Thermal sensor range: 40 o C to +125 o C (Max +/3 o C accuracy) JEDEC pinout Gold edge contacts Leadfree, RoHS compliant PCB: Height 30.00mm (1.181 ), double sided component Industrial temperature (TOPER): 40 o C to +95 o C (module screening using commercial DRAM) Notes: Double refresh rate is required when 85 o C < TOPER <= 95 o C. TOPER is DRAM case temperature (Tc) Order Information: VL47B5663A F8 S E I. OPERATING TEMPERATURE I : Industrial screening DRAM DIE EDIE DRAM MANUFACTURER S SAMSUNG MODULE SPEED F8: CL7 Pin Name A0~A13 A10/AP A12/BC# BA0~BA2 ~3 DQS0~DQS7 DQS0#~DQS7# DM0~DM7 CK0, CK0#, CK1, CK1# ODT0, ODT1 CKE0, CKE1 CS0#, CS1# RAS# CAS# WE# RESET# VDD VSS SA0~SA1 SDA SCL EVENT# VREFCA VREFDQ VDDSPD VTT NC Function Address Inputs Address Input/ Autoprecharge Address Input/ Burst Chop Bank Address Inputs Data Input/Output Data Strobes Data Strobes Complement Data Masks Clock Inputs Ondie Termination Control Clock Enables Chip Selects Row Address Strobes Column Address Strobes Write Enable Register and SDRAM Control Voltage Supply Ground SPD Address SPD Data Input/Output SPD Clock Input Temperature Event Output Reference Voltage for CA Reference Voltage for DQ SPD Voltage Supply Termination Voltage No Connect DRAM component: Samsung K4B1G0846EBCH9 VL: Leadfree/RoHS Tel Tomas, Rancho Santa Margarita, CA USA 1

2 VL47B5663AF8SEI REV: 1.0 Pin Configuration 204PIN DDR3 SODIMM FRONT 204PIN DDR3 SODIMM BACK Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name 1 VREFDQ VDD 157 DQ42 2 VSS 54 VSS 106 VDD 158 DQ46 3 VSS 55 VSS 107 A DQ43 4 DQ BA1 160 DQ BA0 161 VSS RAS# 162 VSS VDD 163 DQ48 8 VSS 60 VSS 112 VDD VSS 61 VSS 113 WE# 165 DQ49 10 DQS0# 62 DQS3# 114 CS0# DM0 63 DM3 115 CAS# 167 VSS 12 DQS0 64 DQS3 116 ODT0 168 VSS 13 VSS 65 VSS 117 VDD 169 DQS6# 14 VSS 66 VSS 118 VDD 170 DM A DQS ODT1 172 VSS CS1# 173 VSS NC VSS 71 VSS 123 VDD VSS 72 VSS 124 VDD DQ8 73 CKE0 125 NC CKE1 126 VREFCA 178 VSS 23 DQ9 75 VDD 127 VSS 179 VSS VDD 128 VSS VSS 77 NC VSS 78 A15 * DQS1# 79 BA DM1 80 A14 * VSS 29 DQS1 81 VDD 133 VSS 185 VSS 30 RESET# 82 VDD 134 VSS 186 DQS7# 31 VSS 83 A DQS4# 187 DM7 32 VSS 84 A DM4 188 DQS A9 137 DQS4 189 VSS A7 138 VSS 190 VSS VDD 139 VSS VDD VSS 89 A VSS 90 A A VSS A4 144 VSS 196 VSS VDD 145 VSS 197 SA VDD 146 DQ EVENT# 43 VSS 95 A3 147 DQ VDDSPD 44 VSS 96 A2 148 DQ SDA 45 DQS2# 97 A1 149 DQ SA1 46 DM2 98 A0 150 VSS 202 SCL 47 DQS2 99 VDD 151 VSS 203 VTT 48 VSS 100 VDD 152 DQS5# 204 VTT 49 VSS 101 CK0 153 DM CK1 154 DQS CK0# 155 VSS CK1# 156 VSS *: These pins are not used in this module. Tel Tomas, Rancho Santa Margarita, CA USA 2

3 VL47B5663AF8SEI REV: 1.0 Function Block Diagram CS1# CS0# DQS0 DQS0# DM0 DQS4 DQS4# DM4 DQ4 DQS1 DQS1# DM1 DQ4 D0 DQ4 D DQS5 DQS5# DM5 DQ4 D4 DQ4 D12 DQ8 DQ DQ4 D1 DQ4 D9 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ4 D5 DQ4 D13 DQS2 DQS2# DM2 DQS6 DQS6# DM DQ4 D2 DQ4 D10 DQ48 DQ DQ4 D6 DQ4 D14 DQS3 DQS3# DM3 DQS7 DQS7# DM DQ4 D3 DQ4 D DQ4 D7 DQ4 D15 Command, address, control, and clock line terminations A0A13 BA0BA2 RAS# CAS# WE# CKE0 ODT0 CKE1 ODT1 RESET# A0A13: SDRAMs D0D15 BA0BA2: SDRAMs D0D15 RAS#: SDRAMs D0D15 CAS#: SDRAMs D0D15 WE#: SDRAMs D0D15 CKE0: SDRAMs D0D7 ODT0: SDRAMs D0D7 CKE1: SDRAMs D8D15 ODT1: SDRAMs D8D15 RESET#: SDRAMs D0D15 Serial PD w ith integrated thermal sensor SCL SDA EVENT# A0 A1 A2 EVENT# SA0 SA1 A0A13, BA0BA2 RAS#, CAS#, WE#, CS0#, CKE0, ODT0 CS1#, CKE1, ODT1 CK0, CK1 CK0#, CK1# DDR3 SDRAM DDR3 SDRAM 36 ohm +/5% VTT 30 ohm +/5% VDD 0.1uF VDDSPD Serial PD/ Thermal sensor VDD D0D15 CK0 CK0# D0D7 CK1 CK1# D8D15 VTT VREFCA VREFDQ D0D15 D0D15 D0D15 3.3pF 3.3pF VSS D0D15 Notes: 1. Unless otherw ise noted, resistor values are 15 ohms +/5% 2. resistors are 240 ohms +/1% Tel Tomas, Rancho Santa Margarita, CA USA 3

4 VL47B5663AF8SEI REV: 1.0 Absolute Maximum Ratings Symbol Parameter Min Max Unit VDD Voltage on VDD pin relative to VSS V VDDQ Voltage on VDDQ pin relative to VSS V VIN, VOUT Voltage on any pin relative to VSS V TSTG Storage temperature C IL IOZ Input leakage current; Any input 0V<VIN<VDD; VREF input 0V<VIN<0.95V; Other pins not under test = 0V Output leakage current; 0V<VOUT<VDDQ; DQs and ODT are disabled Address, RAS#, CAS#, WE#, BA CS#, CKE, ODT, CK, CK# ua ua DM 4 4 ua DQ, DQS, DQS# ua IVREF VREF supply leakage current; VREF = Valid VREF level ua DC Operating Conditions Symbol Parameter Min Typical Max Unit Notes VDD Supply Voltage V 1,2 VDDQ I/O Supply Voltage V 1,2 VREFDQ (DC) I/O reference voltage DQ bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 VREFCA (DC) Input reference voltage CMD/ADD bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 VTT Termination Reference Voltage x VDDQ 0.5 x VDDQ x VDDQ V 5 Notes: 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. 3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than +/1% VDD 4. For reference: approximate VDD/2 +/15mV. 5. VTT termination voltage in excess of stated limit will adversely affect the command and address signals voltage margin and will reduce timing margins. Operating Temperature Condition Symbol Parameter Rating Units Notes TOPER Operating temperature 40 to C 1,2 Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDEC JESD At 40 to +85 o C, operation temperature range, all DRAM specifications will be supported. The refresh rate is required to double when 85 o C < TOPER <= 95 o C. Tel Tomas, Rancho Santa Margarita, CA USA 4

5 VL47B5663AF8SEI REV: 1.0 Input DC Logic Level All voltages referenced to VSS Symbol Parameter Min Max Unit Command and Address VIHCA(DC) Input High (Logic 1) Voltage VREF VDD V VILCA(DC) Input Low (Logic 0) Voltage VSS VREF V DQ and DM VIHDQ(DC) Input High (Logic 1) Voltage VREF VDD V VILDQ(DC) Input Low (Logic 0) Voltage VSS VREF V Input AC Logic Level All voltages referenced to VSS Symbol Parameter Min Max Unit Command and Address VIHCA(AC) Input High (Logic 1) Voltage VREF V VILCA(AC) Input Low (Logic 0) Voltage VREF V DQ and DM VIHDQ(AC) Input High (Logic 1) Voltage VREF V VILDQ(AC) Input Low (Logic 0) Voltage VREF V Parameter Input/Output Capacitance TA=25 0 C, f=100mhz Symbol Min F8 (DDR31066) Max Unit Input capacitance (A0~A13, BA0~BA2, RAS#, CAS#, WE#) CIN pf Input capacitance (CKE0, CKE1), (ODT0, ODT1), (CS0#, CS1#) CIN pf Input capacitance (CK0, CK0#), (CK1, CK1#) CIN pf Input/Output capacitance (DQ, DQS, DQS#, DM) CIO pf Tel Tomas, Rancho Santa Margarita, CA USA 5

6 VL47B5663AF8SEI REV: 1.0 Condition IDD Specification Operating one bank activeprecharge current; tck= tck(idd); trc= trc(idd); tras= tras MIN(IDD); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING Operating one bank activereadprecharge current; IOUT = 0mA; BL = 8; CL = CL(IDD); AL = 0; tck= tck(idd); trc= trc(idd); tras= tras MIN(IDD); trcd= trcd(idd); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W. Symbol F8 (DDR31066) Unit IDD0* 560 ma IDD1* 680 ma Precharge powerdown current; All device banks idle; tck= tck(idd); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING IDD2PF** 400 ma IDD2PS** 160 ma Precharge standby current; All device banks idle; tck= tck(idd); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Precharge quiet standby current; All device banks idle; tck= tck(idd); CKE is HIGH; CS# is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Active powerdown current; All device banks open; tck= tck(idd); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING. Active standby current; All device banks open; tck= tck(idd); trp= trp(idd); tras= tras MAX(IDD)); CKE is HIGH, CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Operating burst read current; All device banks open; Continuous burst reads; IOUT = 0mA; BL = 8; CL = CL(IDD); AL = 0; tck= tck(idd); tras= tras MAX(IDD); trp= trp(idd); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W. Operating burst write current; All device banks open; Continuous burst writes; BL = 8; CL = CL(IDD); AL = 0; tck= tck(idd); tras= tras MAX(IDD); trp= trp(idd); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Burst refresh current; tck=tck(idd); Refresh command at every trfc(idd) interval; CKE is HIGH; CS# is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING. Self refresh current; CK and CK# at 0V; CKE < 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING. Operating bank interleave read current; All bank interleaving reads; IOUT = 0mA; BL = 8; CL = CL(IDD); AL = trcd(idd) 1*tCK(IDD); tck= tck(idd); trc= trc(idd); trrd = trrd(idd); trcd = 1*tCK(IDD) ; CKE is HIGH; CS# is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R. IDD2N** 480 ma IDD2Q** 480 ma IDD3P** 400 ma IDD3N** 720 ma IDD4R* 960 ma IDD4W* 1000 ma IDD5** 2400 ma IDD6** 160 ma IDD7* 1560 ma Note: IDD specification is based on Samsung Edie components. *: Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW) mode. **: Value calculated reflects all module ranks in this operating condition. Tel Tomas, Rancho Santa Margarita, CA USA 6

7 PART NO.: VL47B5663AF8SEI REV: 1.0 AC TIMING PARAMETERS & SPECIFICATIONS Parameter Symbol K0 (DDR31600) K9 (DDR31333) F8 (DDR31066) MIN MAX MIN MAX MIN MAX Unit Clock Timing Minimum Clock Cycle Time (DLL off mode) tck(dll_off) ns Average Clock Period tck(avg) 1.25 < < <2.5 ns Clock Period tck(abs) tck(avg)min + tjit(per)min tck(avg) + tjit(per) tck(avg)min + tjit(per)min tck(avg) + tjit(per) tck(avg)min + tjit(per)min tck(avg) + tjit(per) ns Average high pulse width tch(avg) tck(avg) Average low pulse width tcl(avg) tck(avg) Clock Period Jitter tjit(per) ps Clock Period Jitter during DLL locking period tjit(per, lck) ps Cycle to Cycle Period Jitter tjit(cc) ps Cycle to Cycle Period Jitter during DLL locking period tjit(cc, lck) ps Cumulative error across 2 cycles terr(2per) ps Cumulative error across 3 cycles terr(3per) ps Cumulative error across 4 cycles terr(4per) ps Cumulative error across 5 cycles terr(5per) ps Cumulative error across 6 cycles terr(6per) ps Cumulative error across 7 cycles terr(7per) ps Cumulative error across 8 cycles terr(8per) ps Cumulative error across 9 cycles terr(9per) ps Cumulative error across 10 cycles terr(10per) ps Cumulative error across 11 cycles terr(11per) ps Cumulative error across 12 cycles terr(12per) ps Cumulative error across n = 13, , 50 cycles terr(nper) terr(nper)min =( ln(n))*tJIT(per)min terr(nper)=( ln(n))*tJIT(per) ps Absolute clock HIGH pulse width tch(abs) tck(avg) Absolute clock Low pulse width tcl(abs) tck(avg) Data Timing DQS,DQS# to DQ skew, per group, per access tdqsq ps DQ output hold time from DQS, DQS# tqh tck(avg) DQ lowimpedance time from CK, CK# tlz(dq) ps DQ highimpedance time from CK, CK# thz(dq) ps Data setup time to DQS, DQS# referenced to Vih(ac)Vil(ac) levels Data setup time to DQS, DQS# referenced to Vih(ac)Vil(ac) levels Data hold time to DQS, DQS# referenced to Vih(ac)Vil(ac) levels tds(base) (AC175) tds(base) (AC150) 25 ps ps tdh(base) ps DQ and DM Input pulse width for each input tdipw ps Tel Tomas, Rancho Santa Margarita, CA USA 7

8 VL47B5663AF8SEI REV: 1.0 Parameter Data Strobe Timing AC TIMING PARAMETERS & SPECIFICATIONS Symbol K0 (DDR31600) K9 (DDR31333) F8 (DDR31066) MIN MAX MIN MAX MIN MAX Unit DQS, DQS# READ Preamble trpre tck DQS, DQS# differential READ Postamble trpst tck DQS, DQS# output high time tqsh tck(avg) DQS, DQS# output low time tqsl tck(avg) DQS, DQS# WRITE Preamble twpre tck DQS, DQS# WRITE Postamble twpst tck DQS, DQS# rising edge output access time from rising CK, CK# DQS, DQS# lowimpedance time (Referenced from RL1) tdqsck ps tlz(dqs) ps DQS, DQS# highimpedance time (Referenced from RL+BL/ 2) thz(dqs) ps DQS, DQS# differential input low pulse width tdqsl tck DQS, DQS# differential input high pulse width tdqsh tck DQS, DQS# rising edge to CK, CK# rising edge tdqss tck(avg) DQS,DQS# failing edge setup time to CK, CK# rising edge tdss tck(avg) DQS,DQS# failing edge hold time to CK, CK# rising edge tdsh tck(avg) Command and Address Timing DLL locking time tdllk nck Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command trtp twtr WRITE recovery time twr ns Mode Register Set command cycle time tmrd nck Mode Register Set command update delay tmod (12tCK,15ns) (12tCK,15ns) (12tCK,15ns) CAS# to CAS# command delay tccd nck Auto precharge write recovery + precharge time tdal(min) WR + roundup (trp / tck(avg)) nck MultiPurpose Register Recovery Time tmprr nck ACTIVE to PRECHARGE command period tras 35 9*tREFI 36 9*tREFI *tREFI ns ACTIVE to internal read or write delay time trcd ns PRECHARGE command period trp ns ACTIVE to ACTIVE or REF command period trc ns ACTIVE to ACTIVE command period for 1KB page size ACTIVE to ACTIVE command period for 2KB page size trrd trrd (4tCK, 6ns) (4tCK, 6ns) (4tCK, 7.5ns) (4tCK,10ns) Four activate window for 1KB page size tfaw ns Four activate window for 2KB page size tfaw ns Command and Address setup time to CK, CK# referenced to Vih(ac) / Vil(ac) levels Command and Address setup time to CK, CK# referenced to Vih(ac) / Vil(ac) levels Command and Address hold time from CK, CK# referenced to Vih(ac) / Vil(ac) levels tis(base) (AC175) tis(base) (AC150) 125 ps ps tih(base) ps Control & Address Input pulse width for each input tipw ps Tel Tomas, Rancho Santa Margarita, CA USA 8

9 PART NO.: VL47B5663AF8SEI REV: 1.0 AC TIMING PARAMETERS & SPECIFICATIONS Parameter Symbol K0 (DDR31600) K9 (DDR31333) F8 (DDR31066) MIN MAX MIN MAX MIN MAX Unit Refresh Timing 1Gb REFRESH to REFRESH or REFRESH to ACTIVE command interval Average periodic refresh interval (0 C<= TCASE <= 85 C) Average periodic refresh interval (85 C<= TCASE <= 95 C) trfc ns trefi us trefi us Calibration Timing Powerup and RESET calibration time tiniti tck Normal operation Full calibration time toper tck Normal operation Short calibration time tcs tck Reset Timing Exit Reset from CKE HIGH to a valid command txpr (5tCK, trfc + 10ns) (5tCK, trfc + 10ns) (5tCK, trfc + 10ns) Self Refresh Timing Exit Self Refresh to commands not requiring a locked DLL txs (5tC, trfc+10ns) (5tC, trfc+10ns) (5tC, trfc +10ns) Exit Self Refresh to commands requiring a locked DLL txsdll tdllk(min) tdllk(min) tdllk(min) nck Minimum CKE low width for Self refresh entry to exit timing tckesr tcke(min) + 1tCK tcke(min) + 1tCK tcke(min) + 1tCK Valid Clock Requirement after Self Refresh Entry (SRE) tcksre (5tC, 10ns) (5tCK, 10ns) (5tCK, 10ns) Valid Clock Requirement before Self Refresh Exit (SRX) tcksrx (5tC, 10ns) (5tCK, 10ns) (5tCK, 10ns) Power Down Timing Exit Power Down with DLL to any valid command; Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL txp (3tCK, 6ns) (3tCK, 6ns) (3tCK, 7.5ns) Exit Precharge Power Down with DLL frozen to commands requiring a locked DLL txpdll (10tCK,24ns) (10tCK,24ns) (10tCK,24ns) CKE minimum pulse width tcke (3tCK, 5ns) (3tCK, 5.625ns) (3tCK, 5.625ns) Command pass disable delay tcpded nck Power Down Entry to Exit Timing tpd tcke(min) 9*tREFI tcke(min) 9*tREFI tcke(min) 9*tREFI tck Timing of ACT command to Power Down entry tactpden nck Timing of PRE command to Power Down entry tprpden nck Timing of RD/RDA command to Power Down entry trdpden RL RL RL Timing of WR command to Power Down entry BL8 (OTF, MRS), BL4OTF twrpden WL (twr/ tck(avg)) WL (twr/ tck(avg)) WL (twr/ tck(avg)) nck Timing of WRA command to Power Down entry BL8 (OTF, MRS), BL4OTF twrapden WL+4 +WR+1 WL+4 +WR+1 WL+4 +WR+1 nck Timing of WR command to Power Down entry (BL4MRS) twrpden WL (twr/ tck(avg)) WL (twr/ tck(avg)) WL (twr/ tck(avg)) nck Timing of WRA command to Power Down entry (BL4MRS) twrapden WL+2 +WR+1 WL+2 +WR+1 WL+2 +WR+1 nck Timing of REF command to Power Down entry trefpden Timing of MRS command to Power Down entry tmrspden tmod(min) tmod(min) tmod(min) Tel Tomas, Rancho Santa Margarita, CA USA 9

10 PART NO.: VL47B5663AF8SEI REV: 1.0 AC TIMING PARAMETERS & SPECIFICATIONS Parameter ODT Timing ODT high time without write command or with write command and BC4 Symbol K0 (DDR31600) K9 (DDR31333) F8 (DDR31066) MIN MAX MIN MAX MIN MAX ODTH nck Unit ODT high time with Write command and BL8 ODTH nck Asynchronous RTT turnon delay (PowerDown with DLL frozen) Asynchronous RTT turnoff delay (PowerDown with DLL frozen) taonpd ns taofpd ns ODT turnon taon ps RTT_NOM and RTT_WR turnoff time from ODTL off reference taof tck(avg) RTT dynamic change skew tadc tck(avg) Write Leveling Timing First DQS pulse rising edge after tdqss margining mode is programmed twlmrd tck DQS/DQS delay after tdqs margining mode is programmed twldqsen tck Setup time for tdqss latch twls ps Hold time for tdqss latch twlh ps Write leveling output delay twlo ns Write leveling output error twloe ns Tel Tomas, Rancho Santa Margarita, CA USA 10

11 VL47B5663AF8SEI REV: 1.0 Package Dimensions FRONT VIEW MAX 4.0 +/ 0.10 (2X) (2X) TYP TYP 2.15 TYP 1.0 +/ 0.10 TYP PIN R TYP 0.60 TYP 0.45 TYP PIN / 0.10 BACK VIEW 2.55 TYP 4.00 TYP PIN TYP 3.00 TYP TYP PIN TYP Note: 1. All dimensions are in millimeters with tolerance +/ 0.15mm unless otherwise specified. 2. The dimensional diagram is for reference only. Tel Tomas, Rancho Santa Margarita, CA USA 11

12 VL47B5663AF8SEI REV: 1.0 Revision History: Date Rev. Page Changes 10/24/ All Spec release Tel Tomas, Rancho Santa Margarita, CA USA 12