S71WS-N. Stacked Multi-Chip Product (MCP) 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM

Transcription

1 S1WS-N Stacked Multi-hip Product (MP) 1.8 Volt-only Simultaneous Read/Write, urst-mode Flash Memory with ellularrm S1WS-N over Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. ach product described herein may be designated as dvance Information, Preliminary, or Full Production. See Notice On ata Sheet esignations for definitions. Publication Number S1WS-N_ Revision mendment Issue ate July 19,

2 ata Sheet (dvance Information) Notice On ata Sheet esignations Spansion Inc. issues data sheets with dvance Information or Preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. In all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. The following descriptions of Spansion data sheet designations are presented here to highlight their presence and definitions. dvance Information The dvance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon dvance Information content: This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. o not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice. Preliminary The Preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. This designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. hanges to the technical specifications presented in a Preliminary document should be expected while keeping these aspects of production under consideration. Spansion places the following conditions upon Preliminary content: This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. ue to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications. ombination Some data sheets contain a combination of products with different designations (dvance Information, Preliminary, or Full Production). This type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the haracteristics table and the rase and Program table (in the table notes). The disclaimer on the first page refers the reader to the notice on this page. Full Production (No esignation on ocument) When a product has been in production for a period of time such that no changes or only nominal changes are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or V IO range. hanges may also include those needed to clarify a description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following conditions to documents in this category: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur. Questions regarding these document designations may be directed to your local sales office. ii S1WS-N S1WS-N July 19,

3 S1WS-N Stacked Multi-hip Product (MP) 1.8 Volt-only Simultaneous Read/Write, urst-mode Flash Memory with ellularrm Features Power supply voltage of 1. V to 1.95 V urst Speed: 54 MHz, MHz, 8 MHz Package 8 x 11. mm, 9 x 1 mm Operating Temperature Wireless, 5 to +85 General escription The S1WS-N Series is a product line of stacked Multi-hip Product (MP) packages and consists of the following items: One or more flash memory die (for the S1WS51N, two S9WS5N devices are used) ellularrm Type psrm The products covered by this document are listed in the table below. For details about their specifications, please refer to the individual constituent datasheet for further details. psrm Flash ensity 3 Mb 4 Mb 18 Mb S9WS18N S1WS18N S1WS18N S9WS5N S1WS5N S1WS5N S9WS51N S1WS51N S1WS51N For detailed specifications, please refer to the individual data sheets. ocument Publication Identification Number (PI) S9WS-N S9WS-N_ 18 M ellularrm Type ellram_4 3 M ellularrm Type ellram_ 4 M ellularrm Type ellram_ Publication Number S1WS-N_ Revision mendment Issue ate July 19, This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. o not design in this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.

4 1. Product Selector Guide evice S1WS18N S1WS18N S1WS5N S1WS5N S1WS51N S1WS51N Model Numbers Flash psrm ensity (Mb) Flash Speed (MHz) psrm Speed (MHz) Y Power-Up State (See Note) K P 1 J WS18N 3 N 1 H 8 8 M 1 K P 1 J WS18N 4 N 1 H 8 8 M 1 K P 1 J 4 N 1 H 8 8 M 1 WS5N YK YP 1 YJ 18 YN 1 YH 8 8 YM 1 K P 1 TJ 4 TN 1 TH 8 8 TM 1 WS51N K P 1 J 18 N 1 H 8 8 M 1 psrm (ellular RM) Supplier Package (mm) 8.X11.X1. 8.X11.X1. 11.x8.x1. 9x1x1. 11.x8.x1. 11.x8.x1.4 9x1x1.4 Note: (Protected), 1 (Unprotected [efault State]) S1WS-N S1WS-N July 19,

5 . Ordering Information The order number is formed by a valid combinations of the following: S1WS 5 N W K Packing Type = Tray = Tape and Reel 3 = 13 Tape and Reel RM Supplier, Y Power Up, Speed ombinations K = = ellularrm,, 54 MHz P = = ellularrm, 1, 54 MHz J = = ellularrm,, MHz N = = ellularrm, 1, MHz H = = ellularrm,, 8 MHz M = = ellularrm, 1, 8 MHz Package Modifier = 8x11.x1. mm, 84-ball FG T = 8x11.x1.4 mm, 84-ball FG = 9x1x1.4 mm, 84-ball FG Y = 9x1x1. mm, 84-ball FG Temperature Range W = Wireless (-5 to +85 ) Package Type = Very Thin FIne-Pitch G, Lead (Pb)-free ompliant Package F = Very Thin FIne-Pitch G, Lead (Pb)-free Package hip ontents No content psrm ensity = 3 Mb = 4 Mb = 18 Mb Process Technology N = 11-nm Mirrorit Technology ode Flash ensity 51= 51 Mb (x5mb) 5= 5 Mb 18= 18 Mb Product Family S1WS = Multi-hip Product, 1.8 Volt-only Simultaneous Read/Write urst Mode Flash Memory + psrm.1 Valid ombinations Valid ombinations list configurations planned to be supported in volume for this device. onsult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. Table.1 MP onfigurations and Valid ombinations S1WS18N S1WS5N S1WS51N Valid ombinations K, P, J, N, H, M K, P, J, N, H, M K, P, J, N, H, M W, FW Y K, P, J, N, H, M K, P, H, M T J, N, H, M K, P, J, N, H, M Package Marking Note: The package marking omits the leading S from the ordering part number. July 19, S1WS-N S1WS-N 3

6 3. Input/Output escriptions Table 3.1 identifies the input and output package connections provided on the device. Table 3.1 Input/Output escriptions Symbol 3- Q15-Q O# W# V SS N RY LK V# F-RST# F-WP# F- R-1# F1-# F-# R-R F-V R-V R-U# R-L# NU ddress inputs ata input/output escription Output nable input. synchronous relative to LK for the urst mode. Write nable input. Ground No onnect; not connected internally Ready output. Indicates the status of the urst read. The WIT# pin of the psrm is tied to RY. lock input. In burst mode, after the initial word is output, subsequent active edges of LK increment the internal address counter. Should be at V IL or V IH while in asynchronous mode ddress Valid input. Indicates to device that the valid address is present on the address inputs. Low = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched. High = device ignores address inputs Hardware reset input. Low = device resets and returns to reading array data Hardware write protect input. t V IL, disables program and erase functions in the four outermost sectors. Should be at V IH for all other conditions. ccelerated input. t V HH, accelerates programming; automatically places device in unlock bypass mode. t V IL, disables all program and erase functions. Should be at V IH for all other conditions. hip-enable input for psrm. hip-enable input for Flash 1. synchronous relative to LK for urst Mode. hip-enable input for Flash. synchronous relative to LK for urst Mode. This applies to the 51Mb MP only. ontrol Register nable (psrm). For ellularrm only. Flash 1.8 Volt-only single power supply. psrm Power Supply. Upper yte ontrol (psrm). Lower yte ontrol (psrm) o Not Use 4 S1WS-N S1WS-N July 19,

7 4. MP lock iagram F-V Flash-only ddress Shared ddress (Note ) LK WP# F1-# O# W# F-RST# V# V VI Q15 to Q LK WP# Flash 1 # (Note 4) O# W# RST# RY V# Flash 1 Q15 to Q RY (Note ) F-# R-V V SS (Note 1) R-1# R-U# R-L# R- R-R V LK # W# O# U# L# V# R# V Q I/O15 to I/O psrm WIT# V SSQ 1 Notes: 1. R-R is only present in ellularrm-compatible psrm.. For 1 Flash + psrm, F1-# = #. For Flash + psrm, # = F1-# and F-# is the chip-enable pin for the second Flash. 3. Only needed for S1WS51N. 4. For the 18M psrm devices, there are 3 shared addresses. 5. onnection iagrams/physical imensions This section contains the I/O designations and package specifications for the S1WS-N. 5.1 Special Handling Instructions for FG Packages Special handling is required for Flash Memory products in FG packages. Flash memory devices in FG packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 15 for prolonged periods of time. July 19, S1WS-N S1WS-N 5

8 5. onnection iagrams 5..1 ellularrm ased Pinout 84-ball Fine-Pitch all Grid rray ellularrm-based Pinout (Top View, alls Facing own) Legend 1 1 NU V# RFU LK F-# RFU RFU RFU 9 RFU NU Shared F-WP# R-L# W# RFU Flash Shared only R-U# F-RST# RFU RY F F3 F4 F5 F F F8 F RFU st Flash only nd Flash only RM only G G3 G4 G5 G G G8 G9 V SS Q1 RFU RFU Q RFU 1 H H3 H4 H5 H H H8 H9 F1-# O# Q9 Q3 Q4 Q13 Q15 R-R J J3 J4 J5 J J J8 J9 R-1# Q Q1 F-V R-V Q1 Q V SS K K3 K4 K5 K K K8 K9 RFU Q8 Q Q11 RFU Q5 Q14 RFU L RFU L3 L4 L5 L L L8 RFU RFU F-V RFU RFU RFU L9 RFU M1 NU M1 NU Notes: 1. In MPs based on a single S9WS5N (S1WS5N), ball 5 is RFU. In MP's based on two S9WS5N (S1WS51), ball 5 is F-#.. ddresses are shared between Flash and RM depending on the density of the psrm. MP Flash-only ddresses Shared ddresses S1WS18N -1 - S1WS18N 1- S1WS5N 3 1 S1WS5N 3 S1WS51N 3 1- S1WS51N 3 - S1WS-N S1WS-N July 19,

9 5.. Look-head Pinout for Future esigns Please refer to the esign-in Scalable Wireless Solutions with Spansion Products application note (publication number: esign_scalable_wireless ). ontact your local Spansion sales representative for more details. 5.3 Physical imensions TL84 84-ball Fine-Pitch all Grid rray (FG) 11. x 8. x 1. mm.15 e 1 (X) e S 1 1 PIN 1 ORNR INX MRK 1 TOP VIW.15 (X) M L K J S H G F PIN 1 ORNR. OTTOM VIW 1 84X b.15 M.8 M SI VIW.8 PKG TL 84 J x N/ 11. mm x 8. mm PKG SYMOL MIN NOM MX NOT PROFIL LL HIGHT OY THIKNSS 11. S. OY SIZ 8. S. OY SIZ S. MTRIX FOOTPRINT 1. S. MTRIX FOOTPRINT M 1 MTRIX SIZ IRTION M 1 MTRIX SIZ IRTION n 84 LL OUNT Ø b LL IMTR e.8 S. LL PITH e.8 S LL PITH S / S.4 S. SOLR LL PLMNT,3,4,5,,,8,9 POPULT SOLR LLS 1,1,1,1,1,1, 1,1,F1,F1,G1,G1, H1,H1,J1,J1,K1,K1,L1,L1, M,M3,M4,M5,M,M,M8,M9 NOTS: 1. IMNSIONING N TOLRNING MTHOS PR SM Y14.5M LL IMNSIONS R IN MILLIMTRS. 3. LL POSITION SIGNTION PR JS 95-1, SPP e RPRSNTS TH SOLR LL GRI PITH. 5. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. n IS TH NUMR OF POPULT SOLR LL POSITIONS FOR MTRIX SIZ M X M. IMNSION "b" IS MSUR T TH MXIMUM LL IMTR IN PLN PRLLL TO TUM. S N S R MSUR WITH RSPT TO TUMS N N FIN TH POSITION OF TH NTR SOLR LL IN TH OUTR ROW. WHN THR IS N O NUMR OF SOLR LLS IN TH OUTR ROW S OR S =.. WHN THR IS N VN NUMR OF SOLR LLS IN TH OUTR ROW, S OR S = e/ 8. "+" INITS TH THORTIL NTR OF POPULT LLS. 9. N/ 1 1 ORNR TO INTIFI Y HMFR, LSR OR INK MRK, MTLLIZ MRK INNTTION OR OTHR MNS. 33- \ 1-38.a July 19, S1WS-N S1WS-N

10 5.3. FT84 84-ball Fine-Pitch all Grid rray (FG) 11. x 8. x 1.4 mm.15 e 1 (X) PIN 1 ORNR INX MRK 1 TOP VIW.15 e M L K J S H G F S PIN 1 ORNR 1 (X). OTTOM VIW 1 84X b.15 M.8 M SI VIW.8 PKG FT 84 J N/ x 11. mm x 8. mm NOT PKG SYMOL MIN NOM MX PROFIL LL HIGHT OY THIKNSS 11. S. OY SIZ 8. S. OY SIZ S. MTRIX FOOTPRINT 1. S. MTRIX FOOTPRINT M 1 MTRIX SIZ IRTION M 1 MTRIX SIZ IRTION n 84 LL OUNT φb LL IMTR e.8 S. LL PITH e.8 S LL PITH S / S.4 S. SOLR LL PLMNT,3,4,5,,,8,9 POPULT SOLR LLS 1,1,1,1,1,1,1,1 F1,F1,G1,G1,H1,H1 J1,J1,K1,K1,L1,L1 M,M3,M4,M5,M,M,M8,M9 NOTS: 1. IMNSIONING N TOLRNING MTHOS PR SM Y14.5M LL IMNSIONS R IN MILLIMTRS. 3. LL POSITION SIGNTION PR JS 95-1, SPP e RPRSNTS TH SOLR LL GRI PITH. 5. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. n IS TH NUMR OF POPULT SOLR LL POSITIONS FOR MTRIX SIZ M X M. IMNSION "b" IS MSUR T TH MXIMUM LL IMTR IN PLN PRLLL TO TUM. S N S R MSUR WITH RSPT TO TUMS N N FIN TH POSITION OF TH NTR SOLR LL IN TH OUTR ROW. WHN THR IS N O NUMR OF SOLR LLS IN TH OUTR ROW S OR S =.. WHN THR IS N VN NUMR OF SOLR LLS IN TH OUTR ROW, S OR S = e/ 8. "+" INITS TH THORTIL NTR OF POPULT LLS. 9. N/ 1 1 ORNR TO INTIFI Y HMFR, LSR OR INK MRK, MTLLIZ MRK INNTTION OR OTHR MNS \ a 8 S1WS-N S1WS-N July 19,

11 5.3.3 TS84 84-ball Fine-Pitch all Grid rray (FG) 1. x 9. x 1. mm.15 e 1 (X) e S 1 1 PIN 1 ORNR INX MRK 1 TOP VIW.15 (X) M L K J S H G F OTTOM VIW PIN 1 ORNR. 1 84X b.15 M.8 M SI VIW.8 PKG TS 84 J x N/ 1. mm x 9. mm PKG SYMOL MIN NOM MX NOT PROFIL LL HIGHT OY THIKNSS 1. S. OY SIZ 9. S. OY SIZ S. MTRIX FOOTPRINT 1. S. MTRIX FOOTPRINT M 1 MTRIX SIZ IRTION M 1 MTRIX SIZ IRTION n 84 LL OUNT φb LL IMTR e.8 S. LL PITH e.8 S LL PITH S / S.4 S. SOLR LL PLMNT,3,4,5,,,8,9 POPULT SOLR LLS 1,1,1,1,1,1 1,1,F1,F1,G1,G1 H1,H1,J1,J1,K1,K1,L1,L1 M,M3,M4,M5,M,M,M8,M9 NOTS: 1. IMNSIONING N TOLRNING MTHOS PR SM Y14.5M LL IMNSIONS R IN MILLIMTRS. 3. LL POSITION SIGNTION PR JS 95-1, SPP e RPRSNTS TH SOLR LL GRI PITH. 5. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. n IS TH NUMR OF POPULT SOLR LL POSITIONS FOR MTRIX SIZ M X M. IMNSION "b" IS MSUR T TH MXIMUM LL IMTR IN PLN PRLLL TO TUM. S N S R MSUR WITH RSPT TO TUMS N N FIN TH POSITION OF TH NTR SOLR LL IN TH OUTR ROW. WHN THR IS N O NUMR OF SOLR LLS IN TH OUTR ROW S OR S =.. WHN THR IS N VN NUMR OF SOLR LLS IN TH OUTR ROW, S OR S = e/ 8. "+" INITS TH THORTIL NTR OF POPULT LLS. 9. N/ 1 1 ORNR TO INTIFI Y HMFR, LSR OR INK MRK, MTLLIZ MRK INNTTION OR OTHR MNS. 34\ July 19, S1WS-N S1WS-N 9

12 5.3.4 F84 84-ball Fine-Pitch all Grid rray (FG) 1. x 9. x 1.4 mm.15 e 1 (X) e S 1 1 PIN 1 ORNR INX MRK 1 TOP VIW.15 (X) M L K J S H G F PIN 1 ORNR. OTTOM VIW PKG F 84 J 1 SI VIW 84X b.15 M.8 N/ x 1. mm x 9. mm NOT PKG SYMOL MIN NOM MX M PROFIL LL HIGHT OY THIKNSS 1. S. OY SIZ 9. S. OY SIZ S. MTRIX FOOTPRINT 1. S. MTRIX FOOTPRINT M 1 MTRIX SIZ IRTION M 1 MTRIX SIZ IRTION n 84 LL OUNT Ø b LL IMTR e.8 S. LL PITH e.8 S LL PITH S / S.4 S. SOLR LL PLMNT,3,4,5,,,8,9 POPULT SOLR LLS 1,1,1,1,1,1 1,1,F1,F1,G1,G1 H1,H1,J1,J1,K1,K1,L1,L1 M,M3,M4,M5,M,M,M8,M9 Note: S is an NSI standard for asic Space entering..8 NOTS: 1. IMNSIONING N TOLRNING MTHOS PR SM Y14.5M LL IMNSIONS R IN MILLIMTRS. 3. LL POSITION SIGNTION PR JS 95-1, SPP e RPRSNTS TH SOLR LL GRI PITH. 5. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. SYMOL "M" IS TH LL MTRIX SIZ IN TH "" IRTION. n IS TH NUMR OF POPULT SOLR LL POSITIONS FOR MTRIX SIZ M X M. IMNSION "b" IS MSUR T TH MXIMUM LL IMTR IN PLN PRLLL TO TUM. S N S R MSUR WITH RSPT TO TUMS N N FIN TH POSITION OF TH NTR SOLR LL IN TH OUTR ROW. WHN THR IS N O NUMR OF SOLR LLS IN TH OUTR ROW S OR S =.. WHN THR IS N VN NUMR OF SOLR LLS IN TH OUTR ROW, S OR S = e/ 8. "+" INITS TH THORTIL NTR OF POPULT LLS. 9. N/ 1 1 ORNR TO INTIFI Y HMFR, LSR OR INK MRK, MTLLIZ MRK INNTTION OR OTHR MNS. 343 \ a 1 S1WS-N S1WS-N July 19,

13 . Revision History Section Revision (February 1, 4) Revision 1 (February 9, 5) Global Revision (March 31, 5) Global Revision 3 (May, 5) Global Revision 4 (ugust 5, 5) Global Revision 5 (February, ) Global Revision (July 19, ) Global escription Initial release. Updated document to include urst Speed of MHz Updated Publication Number Updated Product Selector Guide and Ordering Information tables dded 8 MHz speed options to: Product Selector Guide Ordering Information table Valid ombination table Replaced module cellrm with cellrm_3 and cellrm_4 Updated Product Selector Guide with new options Updated the Ordering Part Number table Updated the Valid ombinations table Removed the Look-ahead iagram Reformatted document to new template dded reference to 3 Mb ellrm module olophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or () for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. ny semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign xchange and Foreign Trade Law of Japan, the US xport dministration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any damages of any kind arising out of the use of the information in this document. opyright 4- Spansion Inc. ll Rights Reserved. Spansion, the Spansion logo, Mirrorit, ORNN, H-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. July 19, S1WS-N S1WS-N 11