DDR Testing:Compliance,Verify and Debug( 一 )
|
|
- Sandra Henry
- 5 years ago
- Views:
Transcription
1 DDR Testing:Compliance,Verify and Debug( 一 ) Double data-rate (DDR) memory has ruled the roost as the main system memory in PCs for a long time. Of late, it's seeing more usage in embedded systems as well. Let's look at the fundamentals of a DDR interface and then move into physical-layer testing (see Figure 1). Figure 1: A representative test setup for physical-layer DDR testing A DDR interface entails each DRAM chip transferring data to/from the memory controller by means of several digital data lines. These data streams are accompanied by a strobe signal. Because data can flow both from the controller to the DRAM (write operation) and from the DRAM to the controller (read operation, these digital lines are bidirectional in nature. Common clock, command, and address lines serve all DRAM chips. Because these lines control the interface's operation, they are unidirectional between the controller and the memory ICs. Figure 2 illustrates the "fly-by" topology in use beginning with the DDR3 standard.
2 Figure 2: Common clock, command, and address lines link DRAM chips and controller DDR is "double data rate" memory because of how data transfers are timed: a byte is transmitted on the rising edge of the clock, and another on the falling edge of the clock. The clock runs at half of the DDR data rate and is distributed to all memory chips. The DDR command bus consists of several signals that control the operation of the DDR interface. Command signals are clocked only on the rising edge of the clock. Possible command states vary by DDR speed grade but can include: deselect, no operation, read, write, bank activate, precharge, refresh, and mode register set. The address bus selects which cells of the DRAM are being written to or read from. Like the command bus, the address bus is singleclocked. The bit values on the bus determine the bank, row, and column being written or read. Due to the interface's bi-directional nature, data is transferred between the memory and controller in bursts. To that end, the strobe (DQS) signal is a differential "bursted clock" that only functions during read and write operations. In most DDR generations since its inception, the timing relationship between the strobe and data signals is different for reads and writes (see Figure 3).
3 Figure 3: The timing relationship between the DDR strobe and data signals is different for reads and writes Finally, each DRAM chip has multiple parallel data lines (DQ0, DQ1, and so on) that carry data from the controller to the DRAM for write operations and vice versa for read operations. The data signals are true double data-rate signals that transition at the same rate as the clock/strobe (two transfers per clock cycle). DDR memory interfaces are becoming increasingly common, and present a unique set of challenges to those designing high-speed embedded systems. This article will examine what DDR interface testing is all about, concentrating primarily on the physical layer and solutions to common problems. Physical-layer tests ascertain whether the voltage levels, timing, and signal fidelities are adequate for a system to function correctly. This is distinct from protocol-layer testing, which determines whether the controller and memory chips are communicating properly at the digital level and above. Within the domain of physical-layer test are three subcategories: Compliance: Do the device output signals comply with the JEDEC specification? Validation: Do the devices interact correctly within the system environment? Debug: Why is my device/system not behaving as it should?
4 Compliance test means a raft of specific, mandated tests; these tests are critically important for DRAM and controller vendors. Validation tests, which are less prescriptive but require fuller visibility into system behavior, are critical for system integrators. Debug requires an exhaustive view of system behavior and typically follow from failed compliance tests and/or flawed system behavior. Figure 4: Analyzing the interplay between the high-speed signals and the command bus deepens insight into DDR behavior Which DDR signals are important for such testing? In physical-layer compliance and validation testing, the fastest signals shown in Figure 1 are the most critical: clock (CK), strobe (DQS), and data (DQn). These signals must be analyzed as analog waveforms to fully characterize their signal fidelity. And because there are many data lines in a DDR interface, testing all of them is a time-consuming proposition. Thus, in many instances, board-level simulation reveals the most likely worst-case data lines to isolate them for testing.
5 Figure 5: Shown is an example of a complete DDR analysis system To gain a more complete system-level view, analyzing the interactions between the high-speed CK, DQ, and DQS signals and the slower command bus gives much deeper insight into behavior. In many cases, it is sufficient to acquire the digital state of these signals so long as the acquisition achieves high timing accuracy. What would a complete DDR analysis system look like? Figure 5 provides an example. For acquisition of analog signals, a highbandwidth oscilloscope is paired with low-loading differential probes. Digital signals call for a high-sample-rate digital analyzer and high-bandwidth digital probe. On the oscilloscope, analysis software handles identification of bursts and performs measurements.
6 Figure 6: Shown is a typical BGA package for DDR memory Now let's look into some of the specific challenges one faces in a close examination of these interfaces. The first test challenge is simply accessing the signals of interest. These days, DRAM chips come in ball-grid-array (BGA) packages that are wave-soldered to a matching array of pads on the PCB (Figure 6). How does one get to those pads?
7 Figure 7: Interposers that sit between the DRAM chip and PCB can alleviate difficult signal access Three common approaches to making BGA solder joints accessible include: backside vias, interposers, and DIMM series resistors. If they're included in the PCB layout, backside vias can be the ideal spot at which to probe DDR signals. Typically, good signal fidelity results from the vias' proximity to the termination. However, many devices, such as dual-rank DIMMs and dense embedded systems render this access option untenable. The second option of interposers can also be useful in difficult access situations (Figure 7). As with backside vias, interposers afford reasonably good signal fidelity. However, they impose additional complexity if the socket is to be installed correctly. In addition, the interposer's footprint can be problematic on crowded PCBs.
8 Figure 8: DIMM series resistors are a good alternative for dual-rank DIMMs If dual-rank (or two-sided) DIMMs are involved, the backside vias won't be accessible. This makes DIMM series resistors a good alternate location for signal access (Figure 8). The downside of this approach is that the distance between the probe and the DRAM's terminations can result in problematic reflections from the receiver.
Making Your Most Accurate DDR4 Compliance Measurements. Ai-Lee Kuan OPD Memory Product Manager
Making Your Most Accurate DDR4 Compliance Measurements Ai-Lee Kuan OPD Memory Product Manager 1 Agenda DDR4 Testing Strategy Probing Analysis Tool Compliance Test Conclusion 2 DDR4 Testing Strategy 1.
More informationBreakthrough Insight into DDR4/LPDDR4 Memory Greater Than 2400 Mb/s
Breakthrough Insight into DDR4/LPDDR4 Memory Greater Than 2400 Mb/s January 2015 Jennie Grosslight Product Manager Agenda Overview Benefits and challenges for DDR4 and LPDDR4 >2400Mb/s Breakthrough Insight
More informationKeysight U7231B, U7231C DDR3 and LPDDR3 Compliance Test Application For Infiniium Series Oscilloscopes DATA SHEET
Keysight U7231B, U7231C DDR3 and LPDDR3 Compliance Test Application For Infiniium Series Oscilloscopes DATA SHEET Test, Debug and Characterize Your DDR3 and LPDDR3 Designs Quickly and Easily The Keysight
More informationHow to Solve DDR Parametric and Protocol Measurement Challenges
How to Solve DDR Parametric and Protocol Measurement Challenges Agilent DTD Scopes and Logic Analyzer Division Copyright 2008 Agilent Technologies Solve DDR Phy & Protocol Challenges Page 11 25 September
More informationDDR3 DIMM Slot Interposer
DDR3 DIMM Slot Interposer DDR3 1867 Digital Validation High Speed DDR3 Digital Validation Passive 240 pin DIMM Slot Interposer Custom Designed for Agilent Logic Analyzers Compatible with Agilent Software
More information2GB DDR3 SDRAM SODIMM with SPD
2GB DDR3 SDRAM SODIMM with SPD Ordering Information Part Number Bandwidth Speed Grade Max Frequency CAS Latency Density Organization Component Composition Number of Rank 78.A2GC6.AF1 10.6GB/sec 1333Mbps
More informationElectrical Verification of DDR Memory
Electrical Verification of DDR Memory Application Note Virtually every electronic device, from smart phones to server farms, uses some form of RAM memory. Although flash NAND continues to grow because
More informationIMM64M64D1SOD16AG (Die Revision D) 512MByte (64M x 64 Bit)
Product Specification Rev. 2.0 2015 IMM64M64D1SOD16AG (Die Revision D) 512MByte (64M x 64 Bit) 512MB DDR Unbuffered SO-DIMM RoHS Compliant Product Product Specification 2.0 1 IMM64M64D1SOD16AG Version:
More informationIMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM128M72D1SOD8AG (Die Revision F) 1GByte (128M x 72 Bit) 1GB DDR Unbuffered SO-DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M72D1SOD8AG Version: Rev.
More informationIMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit)
Product Specification Rev. 1.0 2015 IMM128M64D1DVD8AG (Die Revision F) 1GByte (128M x 64 Bit) 1GB DDR VLP Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM128M64D1DVD8AG Version: Rev.
More information4GB Unbuffered VLP DDR3 SDRAM DIMM with SPD
4GB Unbuffered VLP DDR3 SDRAM DIMM with SPD Ordering Information Part Number Bandwidth Speed Grade Max Frequency CAS Latency Density Organization Component Composition 78.B1GE3.AFF0C 12.8GB/sec 1600Mbps
More informationMemory Interface Verification and Debug. Analog Validation Presentation
Memory Interface Verification and Debug Analog Validation Presentation Memory Validation Challenges Speed Upward trend to meet the ever increasing application needs Widely used High Speed Parallel Bus,
More informationIMM64M64D1DVS8AG (Die Revision D) 512MByte (64M x 64 Bit)
Product Specification Rev. 1.0 2015 IMM64M64D1DVS8AG (Die Revision D) 512MByte (64M x 64 Bit) 512MB DDR VLP Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM64M64D1DVS8AG Version:
More informationDatasheet. Zetta 4Gbit DDR3L SDRAM. Features VDD=VDDQ=1.35V / V. Fully differential clock inputs (CK, CK ) operation
Zetta Datasheet Features VDD=VDDQ=1.35V + 0.100 / - 0.067V Fully differential clock inputs (CK, CK ) operation Differential Data Strobe (DQS, DQS ) On chip DLL align DQ, DQS and DQS transition with CK
More informationGet it right the first time! How to test for compliance to the LPDDR4 JEDEC Specification
Get it right the first time! How to test for compliance to the LPDDR4 JEDEC Specification Barbara Aichinger Vice President FuturePlus Systems Corporation Represented in China by Fullwise Technologies JEDEC
More informationStructure of Computer Systems. advantage of low latency, read and write operations with auto-precharge are recommended.
148 advantage of low latency, read and write operations with auto-precharge are recommended. The MB81E161622 chip is targeted for small-scale systems. For that reason, the output buffer capacity has been
More informationOrganization Row Address Column Address Bank Address Auto Precharge 128Mx8 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10
GENERAL DESCRIPTION The Gigaram is ECC Registered Dual-Die DIMM with 1.25inch (30.00mm) height based on DDR2 technology. DIMMs are available as ECC modules in 256Mx72 (2GByte) organization and density,
More informationDDR3 DIMM 1867 Interposer For use with Agilent Logic Analyzers
DDR3 DIMM 1867 Interposer For use with Agilent Logic Analyzers DDR3 1867 MT/s bus analysis Supports Agilent 16900-series logic analyzers Includes protocol-decode software, probe configuration software,
More informationAPPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0031 PCB PART NO. :
Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVAL SHEET APPROVED NO. : 90003-T0031 ISSUE DATE MODULE PART NO. : July-28-2011 : 78.02GC6.AF0 PCB PART NO. : 48.18220.090 IC Brand DESCRIPTION : Hynix : DDR3
More informationCOSC 6385 Computer Architecture - Memory Hierarchies (III)
COSC 6385 Computer Architecture - Memory Hierarchies (III) Edgar Gabriel Spring 2014 Memory Technology Performance metrics Latency problems handled through caches Bandwidth main concern for main memory
More informationKeysight Digital BGA Interposer Catalog
Keysight Digital BGA Interposer Catalog Keysight Technologies provides a range of Ball Grid Array (BGA) interposers, optimized for oscilloscope or logic analyzer measurements, that enable accurate testing
More informationDDR3 Mini DIMM Slot Interposer
DDR3 Mini DIMM Slot Interposer DDR3-1600 Mini DIMM Digital Validation High Speed DDR3 Digital Validation Passive 244-pin Mini DIMM Slot Interposer Compatible with Agilent Software Applications Acquisition
More informationIMM64M72D1SCS8AG (Die Revision D) 512MByte (64M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM64M72D1SCS8AG (Die Revision D) 512MByte (64M x 72 Bit) RoHS Compliant Product Product Specification 1.0 1 IMM64M72D1SCS8AG Version: Rev. 1.0, MAY 2015 1.0 - Initial
More informationEffortless Burst Separation
DDR Debug Toolkit Key Features Read/Write burst separation with a push of a button Simultaneous analysis of four different measurement views View up to 10 eye diagrams with mask testing and eye measurements
More informationDDR2 SDRAM UDIMM MT8HTF12864AZ 1GB
Features DDR2 SDRAM UDIMM MT8HTF12864AZ 1GB For component data sheets, refer to Micron's Web site: www.micron.com Figure 1: 240-Pin UDIMM (MO-237 R/C D) Features 240-pin, unbuffered dual in-line memory
More informationW2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes
W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Sheet The W2630 Series DDR2 BGA probes enable probing of embedded memory DIMMs directly at the ball grid array with Agilent logic analyzers
More informationUsing the SODIMMDDRII667/800 NEXVu product a step by step overview with Signal Integrity Display
Applications Note Using the SODIMMDDRII667/800 NEXVu product a step by step overview with Signal Integrity Display Introduction The SODIMMDDRIINEXVu667/800 is an instrumented NEXVu SODIMM that provides
More information2GB DDR3 SDRAM 72bit SO-DIMM
2GB 72bit SO-DIMM Speed Max CAS Component Number of Part Number Bandwidth Density Organization Grade Frequency Latency Composition Rank 78.A2GCF.AF10C 10.6GB/sec 1333Mbps 666MHz CL9 2GB 256Mx72 256Mx8
More informationAPPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0026 PCB PART NO. :
Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVAL SHEET APPROVED NO. : 90004-T0026 ISSUE DATE MODULE PART NO. : July-26-2012 : 78.A1GDR.AF00C PCB PART NO. : 48.16221.090 IC Brand DESCRIPTION : Hynix :
More informationDDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site:
DDR2 SDRAM UDIMM MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB For component data sheets, refer to Micron s Web site: www.micron.com 2GB, 4GB (x64, DR): 240-Pin DDR2 SDRAM UDIMM Features Features 240-pin, unbuffered
More informationSDRAM DDR3 256MX8 ½ Density Device Technical Note
SDRAM DDR3 256MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the SGG128M8V79DG8GQF-15E DDR3 SDRAM device is configured and tested as a 1Gb device. This
More informationIMME256M64D2SOD8AG (Die Revision E) 2GByte (256M x 64 Bit)
Product Specification Rev. 1.0 2015 IMME256M64D2SOD8AG (Die Revision E) 2GByte (256M x 64 Bit) 2GB DDR2 Unbuffered SO-DIMM By ECC DRAM RoHS Compliant Product Product Specification 1.0 1 IMME256M64D2SOD8AG
More informationIMME256M64D2DUD8AG (Die Revision E) 2GByte (256M x 64 Bit)
Product Specification Rev. 1.0 2015 IMME256M64D2DUD8AG (Die Revision E) 2GByte (256M x 64 Bit) 2GB DDR2 Unbuffered DIMM By ECC DRAM RoHS Compliant Product Product Specification 1.0 1 IMME256M64D2DUD8AG
More informationFB-DIMM Commands/Data and Lane Traffic Verification
FB-DIMM Commands/Data and Lane Traffic Verification Preparing for FB-DIMM Fully buffered dual inline memory modules (FB-DIMMs) provide servers and workstations with greater memory capacities, higher operating
More information90000 DSO/DSA Series Oscilloscopes
DDR4 Keysight Compliance Infiniium Test Bench 90000 DSO/DSA Series Oscilloscopes ADS DDR4 DesignGuide and Compliance Test Bench 1 Contents Installing the DDR4 Compliance Test Bench... 2 Prerequisites...
More informationTechnical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics
Introduction Technical Note DDR2 (Point-to-Point) Package Sizes and Layout Basics Introduction Point-to-point designers face many challenges when laying out a new printed circuit board (PCB). The designer
More informationDDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB
SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB 512MB, 1GB (x64, DR) 200-Pin DDR SODIMM Features For component data sheets, refer to Micron s Web site: www.micron.com Features 200-pin, small-outline dual
More informationDDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site:
DDR SDRAM UDIMM MT8VDDT3264A 256MB MT8VDDT6464A 512MB For component data sheets, refer to Micron s Web site: www.micron.com 256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin, unbuffered
More information1024MB DDR2 SDRAM SO-DIMM
1024MB DDR2 SDRAM SO-DIMM 1024MB DDR2 SDRAM SO-DIMM based on 128Mx8,8Banks, 1.8V DDR2 SDRAM with SPD Features Performance range ( Bandwidth: 6.4 GB/sec ) Part Number Max Freq. (Clock) Speed Grade 78.02G86.XX2
More informationDDR SDRAM UDIMM. Draft 9/ 9/ MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site:
DDR SDRAM UDIMM MT18VDDT6472A 512MB 1 MT18VDDT12872A 1GB For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin,
More informationDDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB
DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features
More information1. The values of t RCD and t RP for -335 modules show 18ns to align with industry specifications; actual DDR SDRAM device specifications are 15ns.
UDIMM MT4VDDT1664A 128MB MT4VDDT3264A 256MB For component data sheets, refer to Micron s Web site: www.micron.com 128MB, 256MB (x64, SR) 184-Pin UDIMM Features Features 184-pin, unbuffered dual in-line
More informationRML1531MH48D8F-667A. Ver1.0/Oct,05 1/8
DESCRIPTION The Ramaxel RML1531MH48D8F memory module family are low profile Unbuffered DIMM modules with 30.48mm height based DDR2 technology. DIMMs are available as ECC (x72) modules. The module family
More informationOrganization Row Address Column Address Bank Address Auto Precharge 256Mx4 (1GB) based module A0-A13 A0-A9 BA0-BA2 A10
GENERAL DESCRIPTION The Gigaram GR2DR4BD-E4GBXXXVLP is a 512M bit x 72 DDDR2 SDRAM high density ECC REGISTERED DIMM. The GR2DR4BD-E4GBXXXVLP consists of eighteen CMOS 512M x 4 STACKED DDR2 SDRAMs for 4GB
More informationTECHNOLOGY BRIEF. Double Data Rate SDRAM: Fast Performance at an Economical Price EXECUTIVE SUMMARY C ONTENTS
TECHNOLOGY BRIEF June 2002 Compaq Computer Corporation Prepared by ISS Technology Communications C ONTENTS Executive Summary 1 Notice 2 Introduction 3 SDRAM Operation 3 How CAS Latency Affects System Performance
More informationTechnical Note Designing for High-Density DDR2 Memory
Technical Note Designing for High-Density DDR2 Memory TN-47-16: Designing for High-Density DDR2 Memory Introduction Introduction DDR2 memory supports an extensive assortment of options for the system-level
More informationFeatures. DDR3 Registered DIMM Spec Sheet
Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin, Registered Dual In-line Memory Module (RDIMM) Fast data transfer rates: PC3-8500, PC3-10600, PC3-12800
More informationSDRAM DDR3 512MX8 ½ Density Device Technical Note
SDRAM DDR3 512MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the PRN256M8V90BG8RGF-125 DDR3 SDRAM device operates and is configured as a 2Gb device. Addressing
More informationNEX-DDRHSM. DDR 400MHz Bus Analysis Probe and Software
DDR 400MHz Bus Analysis Probe and Software NEX-DDRHSM Mirrored design of NEX-DDRHS product that provides the ability to simultaneously monitor two DDR sockets in a target Acquisition of DDR400/333/266/200,
More informationKeysight U7233A DDR1 Compliance Test Application with LPDDR and mobile-ddr Support
Ihr Spezialist für Mess- und Prüfgeräte Keysight U7233A DDR1 Compliance Test Application with LPDDR and mobile-ddr Support For Infiniium Series Oscilloscopes Data Sheet datatec Ferdinand-Lassalle-Str.
More informationADQVD1B16. DDR2-800+(CL4) 240-Pin EPP U-DIMM 2GB (256M x 64-bits)
General Description ADQVD1B16 DDR2-800+(CL4) 240-Pin EPP U-DIMM 2GB (256M x 64-bits) The ADATA s ADQVD1B16 is a 256Mx64 bits 2GB(2048MB) DDR2-800(CL4) SDRAM EPP memory module, The SPD is programmed to
More informationValidating and Debugging DDR2, DDR3 SDRAM Designs
Validating and Debugging DDR2, DDR3 SDRAM Designs - Comprehensive Test solution from Analog to Digital Validation for All DDR Versions name title Memory Design and Validation Chip/Component Design Precise
More informationMemory Solutions. Industry Trends and Solution Overview
Memory Solutions Industry Trends and Solution Overview Outline Industry Trends & Market Status Existing SDRAM Technologies DDR3, DDR3L, DDR3U DDR3 Signaling LPDDR2/LPDDR3 LPDDR3 Signaling DDR4 DDR4 Signaling
More informationNEX-DDR266RWM. 184-pin, 2.5V Double Data Rate (DDR) Bus Analysis Probe & Software
NEX-DDR266RWM 184-pin, 2.5V Double Data Rate (DDR) Bus Analysis Probe & Software Mirrored design of NEX-DDR266RW product that provides the ability to simultaneously monitor two DDR sockets in a target.
More informationFeatures. DDR2 UDIMM with ECC Product Specification. Rev. 1.2 Aug. 2011
Features 240pin, unbuffered dual in-line memory module (UDIMM) Error Check Correction (ECC) Support Fast data transfer rates: PC2-4200, PC3-5300, PC3-6400 Single or Dual rank 512MB (64Meg x 72), 1GB(128
More informationNEX-SODIMMDDRII533. SODIMM DDRII 533MT/s Bus Analysis Probe and Software
NEX-SODIMMDDRII533 SODIMM DDRII 533MT/s Bus Analysis Probe and Software Rigid/Flex/Rigid interposer design provides mechanical clearance for use in standard DDR2 SDRAM SODIMM targets Acquisition of DDR2-533MT/s
More informationOptions. Data Rate (MT/s) CL = 3 CL = 2.5 CL = 2-40B PC PC PC
DDR SDRAM UDIMM MT16VDDF6464A 512MB 1 MT16VDDF12864A 1GB 1 For component data sheets, refer to Micron s Web site: www.micron.com 512MB, 1GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features Features 184-pin,
More informationDDR SDRAM SODIMM MT8VDDT1664H 128MB 1. MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site:
SODIMM MT8VDDT1664H 128MB 1 128MB, 256MB, 512MB (x64, SR) 200-Pin SODIMM Features MT8VDDT3264H 256MB 2 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site: www.micron.com Features
More informationSDRAM DDR3 512MX8 ½ Density Device Technical Note
SDRAM DDR3 512MX8 ½ Density Device Technical Note Introduction This technical note provides an overview of how the XAA512M8V90BG8RGF-SSWO and SSW1 DDR3 SDRAM device is configured and tested as a 2Gb device.
More informationApplication Overview. Preparing. for FB-DIMM and DDR2. Are you ready?
Preparing for FB-DIMM and Are you ready? Preparing for FB-DIMM and FB-DIMM 0 FB-DIMM 1 FB-DIMM 7 Memory Interface Southbound Traffic Northbound Traffic Clocks FB-DIMM high-speed point-to-point southbound
More informationFeatures. DDR2 UDIMM w/o ECC Product Specification. Rev. 1.1 Aug. 2011
Features 240pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC2-4200, PC3-5300, PC3-6400 Single or Dual rank 512MB (64Meg x 64), 1GB(128 Meg x 64), 2GB (256 Meg x 64) JEDEC
More informationCOSC 6385 Computer Architecture - Memory Hierarchies (II)
COSC 6385 Computer Architecture - Memory Hierarchies (II) Edgar Gabriel Spring 2018 Types of cache misses Compulsory Misses: first access to a block cannot be in the cache (cold start misses) Capacity
More informationDatasheet. Zetta 4Gbit DDR4 SDRAM. Features. RTT_NOM switchable by ODT pin Asynchronous RESET pin supported
Zetta Datasheet Features VDD=VDDQ=1.2V +/- 0.06V Fully differential clock inputs (CK, CK ) operation Differential Data Strobe (DQS, DQS ) On chip DLL align DQ, DQS and DQS transition with CK transition
More informationInterfacing RLDRAM II with Stratix II, Stratix,& Stratix GX Devices
Interfacing RLDRAM II with Stratix II, Stratix,& Stratix GX Devices November 2005, ver. 3.1 Application Note 325 Introduction Reduced latency DRAM II (RLDRAM II) is a DRAM-based point-to-point memory device
More informationIMM64M72SDDUD8AG (Die Revision B) 512MByte (64M x 72 Bit)
Product Specification Rev. 1.0 2015 IMM64M72SDDUD8AG (Die Revision B) 512MByte (64M x 72 Bit) 512MB SDRAM ECC Unbuffered DIMM RoHS Compliant Product Product Specification 1.0 1 IMM64M72SDDUD8AG Version:
More informationReal Time Embedded Systems
Real Time Embedded Systems " Memories " rene.beuchat@epfl.ch LAP/ISIM/IC/EPFL Chargé de cours LSN/hepia Prof. HES 1998-2008 2 General classification of electronic memories Non-volatile Memories ROM PROM
More informationMemory Interface Electrical Verification and Debug DDRA and DDR-LP4 Datasheet
Memory Interface Electrical Verification and Debug DDRA and DDR-LP4 Datasheet DDR Analysis is a standard specific solution tool for Tektronix Performance Digital Oscilloscopes (DPO7000C or DSA/DPO/MSO70000C/D/DX
More informationLE4ASS21PEH 16GB Unbuffered 2048Mx64 DDR4 SO-DIMM 1.2V Up to PC CL
LE4ASS21PEH 16GB Unbuffered 2048Mx64 DDR4 SO-DIMM 1.2V Up to PC4-2133 CL 15-15-15 General Description This Legacy device is a JEDEC standard unbuffered SO-DIMM module, based on CMOS DDR4 SDRAM technology,
More informationAgilent U7231B DDR3 and LPDDR3 Compliance Test Application for Infiniium Series Oscilloscopes. Data Sheet
Agilent U7231B DDR3 and LPDDR3 Compliance Test Application for Infiniium Series Oscilloscopes Data Sheet Test, debug and characterize your DDR3 and LPDDR3 designs quickly and easily The Agilent Technologies
More information440GX Application Note
DDR Memory and the PowerPC 440GP/GX DDR SRAM Controller January 22, 2008 Abstract DDR (double data rate) memory is very similar to existing SDRAM (synchronous dynamic random access memory) in many ways,
More informationDDR3 DIMM 2133 Interposer For use with Agilent Logic Analyzers
DDR3 DIMM 2133 Interposer For use with Agilent Logic Analyzers DDR3 2133 MT/s bus analysis Supports Agilent 16900-series and U4154A logic analyzers Includes protocol-decode software, probe configuration
More informationDDR PHY Test Solution
DDR PHY Test Solution Agenda DDR Technology Overview and Roadmap DDR4 Specification Changes LPDDR3 Specification Changes Visual Triggering VET DDRA Software DDR4 Measurement Details Tektronix Probing Solution
More informationDDR4 SO-DIMM Interposer For use with Keysight Logic Analyzers
DDR4 SO-DIMM Interposer For use with Keysight Logic Analyzers FS2512 DDR4 SO-DIMM Interposer Key Features Quick and easy connection between the 260 pin DDR4 SODIMM memory bus connector and the U4164A Keysight
More informationDDR4 SO-DIMM Interposer For use with Keysight Logic Analyzers
DDR4 SO-DIMM Interposer For use with Keysight Logic Analyzers FS2512 DDR4 SO-DIMM Interposer Key Features Quick and easy connection between the 260 pin DDR4 SODIMM memory bus connector and the U4154A/B
More informationAPPROVAL SHEET. Apacer Technology Inc. Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVED NO. : T0007 PCB PART NO. :
Apacer Technology Inc. CUSTOMER: 研華股份有限公司 APPROVAL SHEET APPROVED NO. : 90004-T0007 ISSUE DATE MODULE PART NO. : March-2-2012 : 78.A1GAS.403 PCB PART NO. : 48.18193.093 IC Brand DESCRIPTION : Samsung :
More informationKeysight W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes. Data Sheet
Keysight W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet 02 Keysight W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes - Data Sheet Features The W2630 Series
More informationKeysight Technologies U7231A DDR3 Compliance Test Application for Infiniium Series Oscilloscopes. Data Sheet
Keysight Technologies U7231A DDR3 Compliance Test Application for Infiniium Series Oscilloscopes Data Sheet Introduction Test, debug and characterize your DDR3 designs quickly and easily The Keysight Technologies,
More informationLPDDR4 DDR Detective. LPDDR4 Detective FS2804. Key Features. For LPDDR4 Protocol, Compliance, Performance and Trace all in one tool!
LPDDR4 DDR Detective For LPDDR4 Protocol, Compliance, Performance and Trace all in one tool! Key Features Supports the NEW LPDDR4 bus protocol with options to add DDR3/4 and LPDDR3 to the same box! Analyzes
More informationDDR Support for Tektronix TLA Logic Analyzers
DDR Support for Tektronix TLA Logic Analyzers What is DDR? DDR stands for Double Data Rate SDRAM. It is the follow-on to conventional PC100 / PC133 SDRAM. The biggest difference is that data is clocked
More informationMirrored DDRHS Support
NEX-DDRHS 184-pin, 2.5V Double Data Rate (DDR) Bus Analysis Probe & Software Acquisition of DDR400/333/266/200 Address/Command, Read and Write Data Quick and easy connection between the DDR bus and a Tektronix
More informationPC2-6400/PC2-5300/PC2-4200/PC Registered DIMM Design Specification Revision 3.40 August 2006
JEDEC Standard No. 21C Page 4.20.10-1 4.20.10-240-Pin PC-6400/PC2-5300/PC2-4200/PC2-3200 DDR2 SDRAM ed DIMM Design Specification PC2-6400/PC2-5300/PC2-4200/PC2-3200 ed DIMM Design Specification Revision
More informationD G28RA 128M x 64 HIGH PERFORMANCE PC UNBUFFERED DDR3 SDRAM SODIMM
D93 6865G28RA 128M x 64 HIGH PERFORMANCE PC3-10600 UNBUFFERED DDR3 SDRAM SODIMM Features 240- Dual In-Line Memory Module (UDIMM) Inputs and outputs are SSTL-15 compatible V DD = V DDQ = 1.5V ± 0.075V Differential
More informationECE 485/585 Microprocessor System Design
Microprocessor System Design Lecture 7: Memory Modules Error Correcting Codes Memory Controllers Zeshan Chishti Electrical and Computer Engineering Dept. Maseeh College of Engineering and Computer Science
More informationM2U1G64DS8HB1G and M2Y1G64DS8HB1G are unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Unbuffered Dual In-Line
184 pin Based on DDR400/333 512M bit Die B device Features 184 Dual In-Line Memory Module (DIMM) based on 110nm 512M bit die B device Performance: Speed Sort PC2700 PC3200 6K DIMM Latency 25 3 5T Unit
More informationTwinDie 1.35V DDR3L SDRAM
TwinDie 1.35R3L SDRAM MT41K4G4 256 Meg x 4 x 8 Banks x 2 Ranks MT41K2G8 128 Meg x 8 x 8 Banks x 2 Ranks 16Gb: x4, x8 TwinDie DDR3L SDRAM Description Description The 16Gb (TwinDie ) DDR3L SDRAM (1.35V)
More informationGoogle Study: Could Those Memory Failures Be Caused By Design Flaws?
Google Study: Could Those Memory Failures Be Caused By Design Flaws? By Barbara P. Aichinger, FuturePlus Systems Corporation JEDEC Memory Server Forum Shenzhen, China March 1, 2012 Abstract: The conclusions
More informationKeysight Technologies W3630A Series DDR3 BGA Probes for Logic Analyzers and Oscilloscopes. Data Sheet
Keysight Technologies W3630A Series DDR3 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet Introduction The W3630A series DDR3 BGA probes enable probing of embedded memory DIMMs directly at the
More informationComputer Systems Laboratory Sungkyunkwan University
DRAMs Jin-Soo Kim (jinsookim@skku.edu) Computer Systems Laboratory Sungkyunkwan University http://csl.skku.edu Main Memory & Caches Use DRAMs for main memory Fixed width (e.g., 1 word) Connected by fixed-width
More informationMT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks. Options 1. Note:
GDDR SGRM 8Gb: x6, x GDDR SGRM Features MTJ6M 6 Meg x I/O x 6 banks, Meg x 6 I/O x 6 banks Features = =.V ±% and.v ±% Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s 6 internal banks Four bank groups for t CCDL
More informationDesigning and Verifying Future High Speed Busses
Designing and Verifying Future High Speed Busses Perry Keller Agilent Technologies Gregg Buzard December 12, 2000 Agenda Bus Technology Trends and Challenges Making the transition: Design and Test of DDR
More information1.35V DDR3L SDRAM SODIMM
1.35V DDR3L SDRAM SODIMM MT4KTF12864HZ 1GB MT4KTF25664HZ 2GB 1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3L SODIMM Features Features DDR3L functionality and operations supported as defined in the component data
More informationDDR3(L) 4GB / 8GB SODIMM
DRAM (512Mb x 8) DDR3(L) 4GB/8GB SODIMM Nanya Technology Corp. M2S4G64CB(C)88B4(5)N M2S8G64CB(C)8HB4(5)N DDR3(L) 4Gb B-Die DDR3(L) 4GB / 8GB SODIMM Features JEDEC DDR3(L) Compliant 1-8n Prefetch Architecture
More informationModule height: 30mm (1.18in) Note:
DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB 1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM Features Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin,
More informationChapter 2: Memory Hierarchy Design (Part 3) Introduction Caches Main Memory (Section 2.2) Virtual Memory (Section 2.4, Appendix B.4, B.
Chapter 2: Memory Hierarchy Design (Part 3) Introduction Caches Main Memory (Section 2.2) Virtual Memory (Section 2.4, Appendix B.4, B.5) Memory Technologies Dynamic Random Access Memory (DRAM) Optimized
More informationDDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB MT8JTF51264AZ 4GB. Features. 1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM.
DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB MT8JTF51264AZ 4GB 1GB, 2GB, 4GB (x64, SR) 240-Pin DDR3 UDIMM Features Features DDR3 functionality and operations supported as defined in the component
More information1.35V DDR3L SDRAM SODIMM
1.35V DDR3L SDRAM SODIMM MT8KTF12864HZ 1GB MT8KTF25664HZ 2GB MT8KTF51264HZ 4GB 1GB, 2GB, 4GB (x64, SR) 204-Pin 1.35V DDR3L SODIMM Features Features DDR3L functionality and operations supported as defined
More information1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Features
DDR3 SDRAM UDIMM MT4JTF12864AZ 1GB MT4JTF25664AZ 2GB 1GB, 2GB (x64, SR) 240-Pin DDR3 UDIMM Features Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin,
More informationDRAM Main Memory. Dual Inline Memory Module (DIMM)
DRAM Main Memory Dual Inline Memory Module (DIMM) Memory Technology Main memory serves as input and output to I/O interfaces and the processor. DRAMs for main memory, SRAM for caches Metrics: Latency,
More informationDDR4 LRDIMMs Let You Have It All
DDR4 LRDIMMs Let You Have It All LRDIMMs provide a superior alternative solution for both deeper memory and higher data bandwidth By Douglas Malech and Sameer Kuppahalli, IDT and Ryan Baxter and Eric Caward,
More informationDDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB. Features. 1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM. Features
DDR3 SDRAM UDIMM MT8JTF12864AZ 1GB MT8JTF25664AZ 2GB 1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM Features Features DDR3 functionality and operations supported as defined in the component data sheet 240-pin,
More information