Highly-integrated multi-functional optoelectronic chip for next generation optical networks

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1 Highly-integrated multi-functional optoelectronic chip for next generation optical networks Hilmi Volkan Demir and Vijit Sabnis Department of Electrical Engineering Edward L. Ginzton Laboratory Stanford University

2 Overview Current situation: 8 Fact 1: Optical network nodes require optical-electrical-optical conversion. 8 Fact 2: Node capabilities limit network bandwidth utilization. Future projection: 8 Service providers will need a cost effective solution to improve the performance of network nodes. Problem: 8 Brute-force solutions for o-e-o conversion Cascaded discrete and bulky components Disadvantages: high component and packaging costs large space and high power consumption a lack of scalability high complexity 8 Network node upgrade: expensive and complicated Our solution: a SINGLE highly-integrated, multi-channel optoelectronic chip that performs multiple network functions.

3 ighly-integrated, multi-functional optoelectronic chips Solution: 8 Cost-effective o-e-o conversion Multiple network functions for multiple channels on a single chip: space routing reshaping reamplification polarization resetting wavelength conversion retiming network monitoring Structure: 8 Optically controlled, optical switch Optoelectronic circuit: Photodetector + Modulator 2D optical crossbar switch: large-size electrically controllable Input data stream@l 1 Photodiode (PD) Polyimide Thin film resistor Output data 2 Bypass capacitor semi-insulating InP substrate Continuous wave 2 Electroabsorption modulator (EAM) waveguide diode

4 Technology l 1 l 2 I PD Conceptual innovation: A single integrated optoelectronic chip for multiple network functions for multiple channels Scientific innovation: Localized o-e-o conversion by confining high-speed electrical signal Engineering innovation: Implementation using novel processing techniques

High-speed electrical interconnect between photodiode

5 Practical implementation Monolithic integration 8 Intimate integration of photodiode and modulator 8 High-speed electrical interconnect between photodiode and modulator EAM waveguide PD epitaxy PD epitaxy substrate µm

6 Performance evaluation Successful demonstration of fabrication process sequence: 8 High performance functionality of individual photodetector and modulator 8 Functionality of integrated switch feasible Performance of a switch design: 8 Simulated using feasible device parameters, 40 Gb/s data rate output extinction ratio > 10 db average input power ~ 3 mw in center telecommunication band Output data modulation (db)

7 Impact on existing infrastructure Cost reduction will allow current optical networks to be upgraded economically when the need arises. 8Today s situation: Cost structure: Module integration per channel Discrete module cost Packaging for each module Accumulated packaging cost High-speed electrical module packaging High-speed electrical backplanes $10K-20K per channel 8Our solution: Cost structure: On-chip integration for multiple channels Chip cost negligible tens of dollars per channel Packaging cost On-chip integrated components Single chip packaging instead of multiple modules No high-speed electrical packaging hundreds of dollars per channel

8 Applications Combining these multiple network functions on a single chip provides more flexibility at a huge cost advantage. This cannot be done on a single chip using other technologies. Optically controlled, optical crossbar switch: 8 Electrically reconfigurable space switching 8 Multi-wavelength signal regeneration 8 Electrically controllable wavelength conversion a switch element Input data: l l a b l c l 1 V l 2 V l 3 V Output data: l a l b l c

9 Impact on future optical networks Opening a new research field 8 Exploring the role of integrated optoelectronic devices in high-performance networking Enabling new technologies (5-10 years in future Tb/s multi-channel optical router Ingress linecards a switch element Forwarding Table Forwarding Decision Highly integrated optoelectronic chip

10 esearch foundation Patent portfolio 1. Device concept 8 H.V. Demir, D.A.B. Miller, V.A. Sabnis 8 Semiconductor device for rapid optical switching by modulated absorption (filed February 2002) 2. Improved device implementation 8 H.V. Demir, D.A.B. Miller, V.A. Sabnis 8 Optically controlled optical switches with hybrid integrated photodetector and modulator (CIP) 3. Device processing 8 H.V. Demir, O. Fidaner, D.A.B. Miller, V.A. Sabnis, J.F. Zheng 8 Wafer-level multi-height quasiplanarization and passivation techniques for semiconductor processing (joint with Intel Co., scheduled to be filed on May 15, 2003) 4. Device applications 8 H.V. Demir, D.A.B. Miller, V.A. Sabnis 8 Highly integrated multi functional optoelectronic Infrastructure Growth OEPIC Corporation GIGA Intel Denmark Processing and packaging 8 Primarily Stanford Nanofabrication Facility 8 Other UCSB Nanofabrication Facility Intel Processing Facilities Testing The Miller Laboratory at Stanford Research team Stanford University 8 Professor David A. B Miller 8 Professor James S. Harris, Jr. 8 Hilmi Volkan Demir 8 Vijit Sabnis 8 Onur Fidaner 8 Salman Latif Intel Corporation 8 Dr. Jun-Fei Zheng 8 Dr. Jesper Hanberg 8 Dr. George Bourianoff Secured funding Intel Corporation

11 Milestones Demonstration of physical optoelectronic switching mechanism: Completed Fall GHz switching Establishment of telecommunication test bed: Fall Fall >$1M worth Development of growth and processing methods: Completed Winter growth, 10-mask step process integration Fabrication and characterization of individual device elements: Completed Winter 2003 Fabrication and testing of integrated switch: In progress (Spring-Summer 2003) Demonstration of multifunctional crossbar switch arrays: Scheduled for completion in Fall 2003-Winter 2004

12 Relevant scientific publications V. Sabnis, H.V. Demir, O. Fidaner, J.S. Harris, Jr., D. A. B. Miller, J-F. Zheng, N. Li, T-C. Wu, and Y-M. Houng Optically-switched Dual-diode Electroabsorption Modulator," accepted to Integrated Photonics Research Meeting, Washington, DC in June 2003 H. V. Demir, M. Yairi, P. Atanackovic, and D. A. B. Miller, Large signal response of high speed p- i-n photodetectors to short pulse with small spot sizes, Conference on Lasers and Electro- Optics (CLEO), Long Beach, CA (2002) M. Yairi, H.V. Demir, and D. A. B. Miller, Optically controlled optical gate with an optoelectronic dual diode structure theory and experiment, Special Issue on Components for Ultrafast Communications, Journal of Optical and Quantum Electronics, 33(7-10), pp (2001) H. V. Demir. V. Sabnis, M. Yairi and D. A. B. Miller, Ultrafast optoelectronics for switching and wavelength conversion, Stanford Photonics Research Center Annual Meeting (SPRC), Stanford, CA (2001) (Invited talk) V. Sabnis, H.V. Demir, M. Yairi, J.S. Harris, Jr., and D. A. B. Miller, Observation of wavelengthconverting optical switching at 2.5 GHz in a surface-normal illuminated waveguide," IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS), San Diego, CA, (2001) M. Yairi, H. V. Demir, C. Coldren, J.S. Harris, Jr., and D. A. B. Miller, Demonstration of an optoelectronic dual-diode optically-controlled optical gate with a 20-ps repetition period operation, Conference on Nonlinear Optics: Materials, Fundamentals, and Applications, Kauai, HI (2000). M. Yairi, H. V. Demir, C. Coldren, J.S. Harris, Jr., and D. A. B. Miller, Optically-controlled optical gate using a double diode structure, IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS), San Francisco, CA (1999)

13 References [1] M. Birk of AT&T Research Labs, 40Gb/s from a carrier s perspective, The 14 th Annual Meeting of the IEEE Laser and Electro-optics Society, San Diego, CA (2001). (Invited talk) [2] R. Ireland, Vice President of SBC (Phone interview in 2001) [3] H. J. R. Dutton of IBM, Understanding Optical Communications, Prentice Hall PTR, Upper Saddle River, New Jersey, [4] A. Hadjifotiou, Head of Optical Communications technology, Nortel Networks, Communication Networks and Systems, A NATO Advanced Study Institute on Ultrafast Photonics, The 56 th Scottish Universities Summer School in Physics, St. Andrews, Scotland (2002). (Invited lecturer) [5] D. Scifres, former CEO of SDL and former CTO of JDS Uniphase, Advances and trends in fiber-optic components and modules, The 1 st Annual Meeting of Stanford Photonics Research Center, Stanford, CA (2001). (Plenary address) [6] S. J. B. Yoo, Wavelength conversion technologies for WDM network applications, IEEE Journal of Lightwave Technology. 14 (6), pp (1996). [7] D. A. B. Miller, Novel optoelectronic devices for optical networks, Stanford Network Research Center Project Report.

14 References [8] H. Martin, CEO of ONI Systems, Photonics Industry, The 1 st Annual Meeting of Stanford Photonics Research Center, Stanford, CA (2001). (Panel discussion) [9] J-L Oudar of Centre National de la Recherche Scientifique, Ultrafast semiconductor processing devices for telecommunication applications (Lecture on the project ASTERIX of Alcatel, Nettest, LPN, Univ. Orsay and Univ. Rennes), A NATO Advanced Study Institute on Ultrafast Photonics, The 56 th Scottish Universities Summer School in Physics, St. Andrews, Scotland (2002). (Invited lecturer) [10] S. Kodama, T. Ito, N, Watanabe, S. Kondo, H. Takeuchi, H. Ito and T. Ishibashi of NTT, Simple wavelength converter using an optical modulator directly driven by a unitraveling-carrier photdiode, Electronics Letters, 34 (23), pp , (1998). [11] D. A.. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegman, T. H. Wood and C. A.. Burrus, Electrical Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures, Physics Review B, 32 pp (1985) [12] M. Rozmann, Director Marketing, IPAG, Germany. (meeting at Stanford in February 2003) [13] Personal communication with leading photonics component companies (proprietary information). [14] H. V. Demir et al., Review of three proposed optical routing schemes, Optics and Routing Seminar (run by D. A. B. Miller, O. Solgaard, M. Horowitz, N. McKweon), Stanford University, Stanford, CA (2001).

15 Innovations. Novel optoelectronic device 8 Localized o-e-o conversion 8 First attempt for realization of a smart photonic device with several functions. New fabrication processing methods 8 Wafer-level, planarization, passivation and interconnection technique. New applications: multi-functionality 8 A single optoelectronic chip simultaneously performs multiple network functions for multiple channels 8 First proposal of large-scale, multi-functional, optically controlle photonic crossbar switch

16 Acknowledgments For their valuable guidance and strong support: 8 Our Stanford research advisors Professor David A. B Miller, and Professor James S. Harris, Jr. For their contributions: 8 Dr. Jun-Fei Zheng 8 Onur Fidaner 8 Dr. Micah Yairi 8 Dr. Nelson Li 8 Dr. D. Houng 8 Dr. T. C. Wu For funding our research: 8 Intel Corporation

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