Lockheed Martin Nanosystems

Transcription

1 Lockheed Martin Nanosystems National Nanotechnology Initiative at Ten: Nanotechnology Innovation Summit December 2010 Dr. Brent M. Segal Director & Chief Technologist, LM Nanosystems / (339) Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

2 Lockheed Martin Nanosystems 12,000 sq. ft. R&D facility in Billerica, MA Class 10K, Class 1K, and Class 100 cleanrooms Dedicated labs for Thin film deposition & etch Photolithography Electrical test / Metrology SEM / Optics Organic / Inorganic chemistry 4,000 sq. ft. R&D and prototyping center in Springfield, MO (at Missouri State Univ.) Focus on advanced CNT coating methods, rapid prototyping, and process optimization State-of-the-art IC/wafer test systems (DC to 40GHz) 50,000 sq. ft. production IC foundry in Manassas, VA (ITAR/Secret Certified Trusted Foundry) Co-located with Lockheed Martin MS2 facility First carbon nanotube technology integrated into CMOS production fab line; first shift tool operators 2 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

3 NRAM Technology Chronology 2001 First Patterned CNT Fabric 2002 First NRAM Switch 2003 First CMOS Compatible CNT Solution 2004 First CMOS Integration 2005 First 22nm NRAM Switch 2006 First CNT Integrated Circuit 2007 Begin 4Mb RH CMOS Integration Mb NRAM Fabricated 2009 Packaged 4Mb NRAM part; Flown on shuttle mission 2010 >99% Raw Bit Yield Mb Product & 64Mb NRAM Design 64Mb TCV 3 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

4 Fabrication with Carbon Nanotube solutions Raw Nanotubes Purified Nanotubes Aqueous Nanotube Solution Dispense & Disperse Solution Evaporate Solvent 4 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved Remove Edge-bead

5 CMOS-compatible CNT fabric coatings Qualified manufacturing process Uses spin-coat application of CNTs in water on CMOS wafers Circumvents high temperature CNT growth process Produces no excess metallic contaminants on wafers No cross contamination of downstream fabrication tools Requires only existing CMOS tools and techniques (standard CMOS infrastructure) 10 μm 1 μm Now available at multiple production CMOS fab lines All are based in U.S. Includes trusted facilities 100 μm 5 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

6 NRAM Non-volatile CNT Memory Flight NRAM evaluation board flown on STS-125 Launched 11 May 2009 (13- day Hubble repair mission) 100+ chips exposed to space conditions for mission duration 1 st gen (2 8 K-bit) packaged NRAM parts mounted with Actel 54SX72 test controller Preparations for next flight 2 nd gen (4 M-bit) NRAM part uses the same 44-pin package and board layout New flight board will continually exercise over 200 M-bits of rad-hard non-volatile memory in space conditions 6 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

7 4 M-bit radiation-hard NRAM development Unique architecture Usable as stand alone or embedded (cache) memory Performance characteristics for space Low power; no standby current; reduced heat generation Non-volatile; long lifetime Scalable to high densities Compatible with existing rad-hard CMOS Radiation / EMP Hardened Next iteration part at 64 M-bit Future part at 2 G-bit 7 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

8 LM Nanosystems Core Competencies Carbon Nanotube (CNT) Solutions and Chemistry Carbon nanotube purification, functionalization, and treatment Production of CMOS-grade CNT solutions for use in nanoelectronics fabrication Wide variety of laboratory chemical and physical analysis techniques Application / coating of CNT fabrics on dielectrics, plastics, metals, etc. CNT Electronics R&D (Design, Fabrication, Test, and Analysis) Device/Circuit design using industry standard IC design tools (e.g. Cadence) Engineering fabrication team with expertise in Si wafer thin film electronics processing as well CNT device fabrication on substrates such Kapton,Mylar, glass, etc. Proven record of successfully installing new CNT fabrication process flows in production CMOS foundries Electrical Test & Characterization Device/Circuit measurement using automated DC and RF characterization equipment Semi-automatic test of integrated CNT/CMOS packaged parts as well as on-wafer die Evaluation of device photoresponse for sensors and energy harvesting 8 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

9 Future Needs for Nanotechnology Continued support for Nanomanufacturing Encourage partnerships Encourage NEW types of metrology Nanotechnology Standards [ISO TC 229/IEC TC 113/IEEE] Standards are a catalyst for progress Global competition is intense. Standards are significant enablers for commercial success at all stages of innovation - from R&D to recycling/disposal Successful innovation in nanotechnologies requires standards based on the best of each nation s science and engineering Documents for standards on consensus specifications advance the field Standards influence R&D and business models. Standards enable innovative products and new markets. Patrick Gallagher, NIST Director, November Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

10 10 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved