Small and Medium Diodes

Transcription

1 Semiconductor Catalog Apr. 1 Small and Medium Diodes SEMICONDUCTOR & STORAGE PRODUCTS

2 Small and Medium Diodes Recently, many products ranging from computers and home appliances to automobiles and industrial equipment have been driving the need for effective solutions to reduce size and weight. Semiconductor requirements differ from application to application. Take power supplies for example, which are being required to accommodate higher capacity in smaller dimensions. This increases the temperature at which systems are operated. To address this problem, Toshiba offers an extensive portfolio of small, high-efficiency diodes, including Schottky barrier diodes (SBDs) featuring high-speed operation and low forward loss. Diodes Schottky Barrier Diodes (SBDs) Toshiba offers low-loss SBDs fabricated with a next-generation process. These SBDs will help increase the performance of equipment that requires a small form factor and high efficiency, such as mobile devices and switching power supplies. SBDs with a reverse voltage of V to V and an average forward current of A to A are available in small surface-mount packages. You will find SBDs that best suit your applications. Rectifier Diodes Diodes for general rectification and reverse-current protection Zener Diodes Super-Fast-Recovery Diodes (S-FRDs) High-Efficiency Diodes (HEDs) Diodes with a reverse voltage of 0 V to 00 V and an average forward current of A to 5 A are available in small surface-mount packages. Toshiba s product portfolio also includes diodes with high ESD performance ideal for automotive applications. Zener diodes are available with a wide range of Zener voltage specifications from 6. V to 0 V. They can be used for a wide range of applications such as consumer, automotive and industrial electronics. 1. Key Features.... Product Lineup.... Selection Guide Product Characteristics Schottky Barrier Diodes (SBDs) Single.... Rectification Diodes Single, Dual.... High-Speed Rectifiers (1) Super-Fast-Recovery Diodes (S-FRDs) Single () High-Efficiency Diodes (HEDs) Single Zener Diodes Application Examples and Toshiba s Recommended Diodes Packaging and Packing Information This brochure contains information on small and medium diodes only. For switching diodes, small-signal Schottky barrier diodes and ESD protection diodes, see the following brochure or our homepage: Homepage Brochure General-Purpose Small-Signal Surface-Mount Devices

3 1. Key Features 1 Schottky Barrier Diodes (SBDs) Schottky Barrier Diodes (SBDs) Voltage rating: VRRM = V, V, V, V rating: IF(AV) = A to A Peak forward voltage: VFM = 0. V typ. (0.7 V max)... VRRM = V (Shown only as examples) VFM = 0. V typ. (0. V max)... VRRM = V VFM = 0. V typ. (0.5 V max)... VRRM = V VFM = 0. V typ. (5 V max)... VRRM = V VFM = V typ. ( V max)... VRRM = V Rectification Diodes (Diodes for General Rectification and Reverse- Protection) Voltage rating: VRRM = 0 V to 00 V rating: IF(AV) = A to A Diodes with high ESD performance are available. Super-Fast-Recovery Diodes (S-FRDs) Super-Fast-Recovery Diodes (S-FRDs) Voltage rating: VRRM = 0 V, 0 V, 00 V, 00 V, 00 V rating: IF(AV) = A to A High-speed switching: Reverse recovery time (trr) 0 ns High-Efficiency Diodes (HEDs) High-Efficiency Diodes (HEDs) Voltage rating: VRRM = 0 V, 0 V, 0 V rating: IF(AV) = to 5 A High-speed switching: Reverse recovery time (trr) ns or ns 5 Zener Diodes Vz = 6. V to 0 V Power dissipation: P = W, W, W ( and packages)

4 . Product Lineup Surface-Mount Trend for Diodes Toshiba has been working to develop the most compact surface-mount packages which allow communication equipment to be miniaturized. Thermal Resistance ( C/W) mm Footprint and Thermal Resistance Glass-epoxy board: Board size = mm, Solder land = 6 mm (Except L-FLAT TM ) US-FLAT <SBD> IF(AV) = to A VRRM = to V mm 6 mm S-FLAT mm M-FLAT <SBD> IF(AV) = to A VRRM = to V <HED> IF(AV) = to A VRRM = 0 V <SBD> IF(AV) = to 5.0 A VRRM = to V <HED> IF(AV) = to A VRRM = 0 to 0 V <SBD> IF(AV) = A VRRM = to V <HED> IF(AV) = to 5.0 A VRRM = 0 to 0 V L-FLAT (Ta = 5 C) Footprint Area (mm ) Internal Structure of FLAT s The FLAT packages feature reduced wire inductance and resistance and an enhanced thermal property compared to wire-bonded packages. Lead Chip Lead Epoxy resin FLAT Series U L-FLAT TM HM-FLAT Ultra-Small Flat Hybrid Middle Flat Small Flat Middle Flat Large Flat Typical product: CUS01, CUSIA Typical product: CRS01, CRSIA Typical product: CMS01, CMSIA Typical product: CLS01 Typical product: HMG Thickness: 0.6 typ Thickness: 0. typ... Thickness: 0. typ Thickness: 1. typ...6 Thickness: 0. typ Unit: mm Unit: mm Unit: mm Unit: mm Unit: mm

5 . Selection Guide Schottky Barrier Diodes (SBDs) Average Forward Peak Repetitive Reverse Voltage V V V V Number Reference Page A 1 A A A A 5 A A U U U L-FLAT TM CUS05 CUS06 CRS06 CUS01 CUS0 CUSIA CRS01 CRS0 CRS05 CRS11 CRSIA CRSIB CRSIC CMS0 CMS0 CMSIA CUSIA CRS0 CRS0 CRSIA CRSIB CRS CRSIA CRSIB CMS06 CMS07 CMS17 CMSIA CRS CRSIA CMS01 CMS0 CMSIA CMS0 CMS05 CLS01 CUS0 CUSIA CRS0 CRSIA CRSIB CMS CMSIA CRSIA CMSIA CRSIA CRSIB CMS11 CMSIA CMS16 CMS1 CMSIA CLS0 CUS0 CRS1 CRS1 CMS CMS CLS : Dual (Two separate diodes) : IF(DC) = A Rectification Diodes Diodes for General Rectification and Reverse- Protection Average Forward 0 V Peak Repetitive Reverse Voltage 0 V 00 V Number Reference Page A HM-FLAT HMG01 5 A HM-FLAT CRG0 CRG07 HMG0 5 1 A CRG0 CRG0 CMC0 CMG05 CMG07 CRG0 CMG06 CMG0 CRG05 A CMG0 CMG0 : Based on AEC-Q1 : Designed for strobe discharge applications. : Dual : High ESD protection 5

6 . Selection Guide Super-Fast-Recovery Diodes (S-FRDs) and High-Efficiency Diodes (HEDs) Super-Fast-Recovery Diodes (S-FRDs) Average Forward A 1 A A Reverse Recovery Time (Max) 0 ns 0 ns 0 ns 0 ns 0 V CRF0( A) CMF0 CMF01 Peak Repetitive Reverse Voltage 00 V 00 V CRF0 CMF0 CMF0 00 V CMF05 Number Reference Page 11 High-Efficiency Diodes (HEDs) Average Forward Single Type A 1 A A A 5 A L-FLAT TM L-FLAT TM Reverse Recovery Time (Max) ns ns ns ns ns ns ns ns ns ns Peak Repetitive Reverse Voltage 0 V 0 V 0 V CRH0 CRH01 CMH0 CMH07 CMH01 CLH01 CLH05 CLH0 CLH06 CMH05A CMH05 CMH0A CMH0 CMH0A CMH0 CLH0 CLH07 Number Reference Page 1 Zener Diodes Zener Diodes Power Dissipation VZ(V) Number Reference Page W CRY6 CRY6 CRY75 CRY CRY1 CRZ CRZ11 CRZ1 CRZ1 CRZ CRZ16 CRZ1 CRZ CRZ CRZ CRZ7 CRZ CRZ CRZ6 1 W CMZB1 CMZB1 CMZB CMZB16 CMZB1 CMZB CMZB CMZB CMZB7 CMZB CMZB CMZB6 1 W CMZ1 CMZ1 CMZ CMZ16 CMZ1 CMZ CMZ CMZ CMZ7 CMZ CMZ CMZ6 1 Power Dissipation VZ(V) Number Reference Page W 1 W CRZ CMZB CRZ CMZB CRZ7 CMZB7 CMZB51 CMZB5 CMZB6 CMZB75 CMZB CMZB0 CMZB1 CMZB CMZB10 CMZB0 CMZB CMZB CMZB70 CMZB0 CMZB CMZB0 1 W CMZ CMZ CMZ7 CMZ51 CMZ5 1 6

7 . Product Characteristics Schottky-Barrier Diodes (SBDs) with Improved Trade-Off Toshiba now offers small to medium Schottky barrier diodes (SBDs) fabricated with a next-generation process. Owing to low peak forward voltage (VFM) and low peak repetitive forward voltage (IRRM) characteristics, these SBDs provide low power loss, help reduce the size and improve the power efficiency of mobile handsets, switching power supplies, etc., thereby improving their overall performance. Voltage rating: VRRM = V, V rating: IF(AV) = 1 A to A Peak forward voltage (Typical characteristics: CRSIA) VFM = 0. V typ. (0. V max (@IFM = A)) Small surface-mount packages (U,, ) Tradeoff Relationship between the Forward Voltage and Reverse Leakage (Example) IRRM(μA)@VRRM = V 00 0 Conventional SBDs SBD series with improved trade-off VFM(V)@IF = A Forward Voltage (VF) Curves (Example) Reverse Leakage (IR) Curves (Example) Tj = 5 C Pulse test IF-VF 0 Pulse test IR-Tj (Typ.) VR = V Forward, IF (A) 1 SBDs with improved trade-off Forward Voltage, VF (V) CRSIA CRS01 (Low-VF) CRS0 (Low-IR) Reverse, IR (ma) SBDs with improved trade-off CRSIA CRS01 (Low-VF) CRS0 (Low-IR) Junction Temperature, Tj ( C) Product Naming Conventions The product naming conventions shown below are used for SBDs with improved trade-off. Product names denote packageing, current rating, voltage rating andf so on. Product Naming Conventions CRS I A (1) () () () (5) (1) Toshiba Schottky barrier diode/package style CRS: S-FLAT package CMS: M-FLAT package CUS: US-FLAT package () Average forward current, IF(AV) Example: : A () Product feature I: Low forward voltage & low leakage current (New SBD series) F: Low forward voltage R: Low leakage current () Reverse voltage, VRRM Example: : V (5) Suffix that indicates an additional feature 7

8 . Product Characteristics.1 Schottky Barrier Diodes (SBDs) Voltage rating: VRRM = V, V, V, V rating: IF(AV) = A to A Available in surface-mount packages. Single U Part Number CUS05 CUS06 CUS01 CUS0 CUSIA CUSIA CUS0 CUSIA CUS0 CRS06 CRS01 CRS0 CRS05 CRS11 CRSIA CRSIB CRSIC CRS0 CRS0 CRSIA CRSIB CRS CRSIA CRSIB CRS CRSIA CRS0 CRSIA CRSIB CRSIA CRSIA CRSIB CRS1 CRS1 : IRRM = 5 μa Max (VR = 5 V) : IF(DC) = A Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (ma) VFM (A) Cj (pf) (Typ.) Conditions to to to to VR 0. = V, 55 to 0.06 f = 1 MHz 55 to to 55 to to to to to to to 55 to 55 to 55 to to to 55 to to VR = V, to f = 1 MHz to 55 to to 55 to to 55 to 55 to 55 to 55 to 55 to to to

9 Single Part Number CMS0 CMS0 CMSIA CMS06 CMS07 CMS17 CMSIA CMS01 CMS0 CMSIA CMS0 CMS05 CMS CMSIA CMSIA CMS11 CMSIA CMS16 CMSIA CMS CMS CLS01 Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (ma) VFM (A) Cj (pf) (Typ.) Conditions 5 15 to to to to to to to to to to VR = V, to f = 1 MHz to to to to to to 0. 6 to to to 77 to to CLS to 5 VR = V, f = 1 MHz L-FLAT TM CLS to 5 : IRRM = 5 μa Max (VR = 5 V) : IF(DC) = A Marking U 1 S1 SF Example: CUS01 Example: CRS01 L-FLAT TM Example: CRSIA S1 S01 Example: CMS01 Example: CLS01

10 . Product Characteristics. Rectification Diodes (Diodes for General Rectification and Reverse- Protection) Voltage rating: rating: VRRM = 0 V, 0 V, 00 V IF(AV) = A to A Available in surface-mount packages. Single Part Number Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (μa) VFM (V) CRG0 CRG07 CRG0 CRG0 CRG0 CRG05 CMC0 CMG05 CMG07 CMG0 CMG06 CMG0 CMG to to 175 to to to to to to to to to to to : Based on AEC-Q1 : High ESD protection : Designed for strobe discharge (A) Dual Part Number HMG01 Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (μa) VFM (A) 0 to HM-FLAT HMG to 175 Note: IF(AV), IFSM, IRRM and VFM are specified per diode. Marking HM-FLAT G G Pin 1 GG1 Example: CRG0 Example: CMG0 Example: HMG01

11 . High-Speed Rectifiers Super-Fast-Recovery Diode (S-FRDs) Voltage rating: rating: High-speed switching: VRRM = 0 V, 00 V, 00 V, 00 V IF(AV) = A to A Reverse recovery time (trr) 0 ns (1) Super-Fast-Recovery Diodes (S-FRDs) Single Part Number Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (μa) VFM (A) trr (ns) Conditions CRF0 CRF to to 0 0 IF = 1 A, di/dt = A/μs CMF01 0 to 0 CMF0 CMF0 CMF to to to IF = 1 A, di/dt = A/μs CMF to.7 0 Marking S-FRD F F1 Example: CRF0 Example: CMF01 11

12 . Product Characteristics High-Efficiency Diode (HEDs) Voltage rating: rating: High-speed switching: VRRM = 0 V, 0 V, 0 V IF(AV) = to 5 A Reverse recovery time (trr) ns or ns Available in surface-mount packages. () High-Efficiency Diodes (HEDs) Single Part Number Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj ( C) Tstg ( C) IRRM (μa) VFM (A) trr (ns) Conditions CRH0 CRH to to 0. IF = 1 A, di/dt = A/μs L-FLAT TM CMH0 CMH07 CMH01 CMH05 CMH05A CMH0 CMH0A CMH0 CMH0A CLH01 CLH05 CLH0 CLH06 CLH0 CLH to to to to to to to to to to to to to to to IF = 1 A, di/dt = A/μs IF = A, di/dt = A/μs Marking HED L-FLAT TM H1 H1 H01 Example: CRH01 Example: CMH01 Example: CLH01 1

13 . Zener Diodes VZ = 6. V to 0 V Power dissipation: P = W, W, W ( and packages) s CRY6 and CRZ Series ( ) Ta = 5 C Part Number CRY6 CRY6 CRY75 CRY CRY1 CRZ CRZ11 CRZ1 CRZ1 CRZ CRZ16 CRZ1 CRZ CRZ CRZ CRZ7 CRZ CRZ CRZ6 CRZ CRZ CRZ7 Power Dissipation (mw) Zener Characteristics Temperature Coefficient of Zener Voltage Zener Voltage Dynamic Measurement Measurement Resistance αt VF IR VZ (V) rd (Ω) IZ (mv/ C) (V) IF (μa) Min Typ. Max Max (ma) Typ. Max Max (A) Max Forward Voltage Reverse Measurement Voltage VR (V) CMZ1 Series ( ) Ta = 5 C Part Number CMZ1 CMZ1 CMZ CMZ16 CMZ1 CMZ CMZ CMZ CMZ7 CMZ CMZ CMZ6 CMZ CMZ CMZ7 CMZ51 CMZ5 Power Dissipation (W) Typ Zener Characteristics Max Temperature Coefficient of Zener Voltage αt (mv/ C) Zener Voltage Dynamic Measurement Measurement Resistance VF IR VZ (V) rd (Ω) IZ (V) IF (μa) Min Max (ma) Typ. Max Max (A) Max Forward Voltage Reverse Measurement Voltage VR (V)

14 . Product Characteristics Marking CRY6, CRZ Series Example: CRY75 Example: CRZ1 Example: CMZB1 Example: CMZ CMZB1 Series CMZ1 Series CMZB1 CMZB1 CMZB CMZB16 CMZB1 CMZB CMZB CMZB CMZB7 CMZB CMZB CMZB6 CMZB CMZB CMZB7 CMZB51 CMZB5 CMZB6 CMZB75 CMZB CMZB0 CMZB1 CMZB CMZB10 CMZB0 CMZB CMZB CMZB70 CMZB0 CMZB CMZB0 Zener Voltage VZ (V) Temperature Coefficient of Zener Voltage αt (mv/ C) Forward Voltage VF (V) Reverse IR (μa) Dynamic Resistance rd (Ω) Measurement IZ (ma) Measurement Voltage VR (V) Measurement IF (A) Zener Characteristics Min Max Typ. Max Max Max Max Typ. Part Number Power Dissipation (W) CMZB1 Series ( ) Ta = 5 C B 1

15 5. Application Examples and Toshiba s Recommended Diodes Notebook PCs Reverse- Protection DC-DC DC-DC Converter Load Switch AC Adapter 5 W V, A W V, A Battery Charger V/ A 1. V/ A V/5 A Secondary Battery Main Battery 5 V/5 A Applications Recommended Diodes Reverse-battery and reverse-current protection DC-DC converters U CUS01, CUS0, CUSIA, CUSIA CRS01, CRS0, CRS05, CRS06, CRS0, CRS0, CRS11, CRS CMS01, CMS0, CMS06, CMS07, CMS0, CMS0, CMS16 CRS0, CRS0, CRS05, CRS0, CRS1, CRSIA, CRSIA, CRSIA CMS0, CMS05, CMS, CMS, CMSIA, CMSIA, CMSIA, CMSIA Automotive Reverse-Battery Protection ECU MOSFET Gate Protection Circuit Switching Circuit Flywheel Diode Surge Absorber IC Load B Battery Load A Applications Recommended Diodes Reverse-battery and reverse-current protection Surge absorbers Flywheeling MOSFET gate protection CRG0, CRG05, CRG07, CRG0, CRG0, CRG0, HMG0 CMG0, CMG0, CMG05, CMG06, CMG07, CMG0 CRZ Series CMZB Series, CMZ Series CRH01, CRH0 CMH01, CMH0, CMH07 CRZ Series CMZB Series, CMZ Series

16 6. Packaging and Packing Information 6.1 Surface-Mount s 1 U Unit: mm dimensions Tape dimensions.0 ± 0.1 ± 0.05 ø ±0.1 ± ± ± ± ± ± ± ± 0.1 L Type ø5 ± 0.05 R Type ± ± ± 0.1 Reel dimensions ø10 ± 0..0 ± 0. Land pattern dimensions for reference only ± *1 ø76 *1: ± *: ± ø1 ± 1 min * ± 1 ± ± ø ± 1 ± Type: TE5 R or L Packing quantities: 00 pcs/reel Unit: mm dimensions Tape dimensions ø ± ±0.1 ± ± ±0.1 ø ± ± ± ± 0.1 L Type R Type Land pattern dimensions for reference only Reel dimensions ø76 ø10 ± 0. 5 ± *1 ø1 ± * ± 1 min 1. 1 ±.0 ± 0.. ø ± 1 *1: ± *: ± ± ± Type: TE5 R or L Packing quantities: 00 pcs/reel 16

17 Unit: mm dimensions Tape dimensions 1.75 ± 0.1 ± ± 0.1 ø ± ± ± 0.05 B max max.0 ± 0.1 ± 0.1 R Type 5 ± 0.1 L Type.7 1 ± 0. Land pattern dimensions for reference only Reel dimensions *1: ± *: ± Packing quantities: ø10 ± 0. 5 ± *1 ø76 ø1 ± * ± 1 min 1 ± ± ø ± 1 ± Type: TE1 R or L 00 pcs/reel L-FLAT TM Unit: mm dimensions Tape dimensions ø ± ± ± 0.1 A 1.75 ± ± 0.05 B ø5 ± 0.05 A L Type 7.5 ± 0.1 R Type 16.0 ± 0. A A. ± 0.1. ± 0.1 B B. ± 0.1 Reel dimensions ± 17.5 ± Land pattern dimensions for reference only ø 55 0 ø 1 ± 0 ± ±. Type: TE16 R or L. Packing quantities: 0 pcs/reel 17

18 6. Packaging and Packing Information 6.1 Surface-Mount s 5 HM-FLAT Unit: mm dimensions Tape dimensions ø ± 0.1 ± 0.05 B.5 ± ± ± ± ± 0.05 ø5 ± A A.5 B B B 0.65 ± Anode 1. Anode. Cathode. Cathode 1 A : Enlarged view Land pattern dimensions for reference only Reel dimensions A A.70 ± 0.05 ø10 ± 0. 5 ± *1 ø76 ø1 ± * ± ± min 1 ±.0 ± 0. ø6 ± 1 *1: ± *: ± ± ± Type: TE5L Packing quantities: 00 pcs/reel 1

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