Memory. Memory Products. EEPROM NOR Flash EERAM Serial SRAM.

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1 Memory Memory Products EEPROM NOR Flash EERAM Serial SRAM

2 Memory Products Microchip s Memory Products Memory products are at the heart of electronic devices and systems we use every day. Virtually all consumer electronics, communication, computing, automotive and medical devices require certain types of memory to store software code, data and parametric data. Microchip s broad portfolio of memory products includes: Serial EEPROM Serial SRAM Serial Flash Parallel Flash Serial EERAM NVSRAM Parallel EEPROM (including MIL883 product) OTP EPROM Quality Comes First Microchip has been a leader in non-volatile memory products for over 30 years. Quality Comes First is at the top of the list of our Guiding Values, which provide the core principles that define our culture and the way we do business. As an ISO/TS certified supplier since 2003, Microchip s aggregate system uniquely supports our commitment to exceptional quality. Our EEPROM products are produced in Microchip-owned Fabs as well as Tier-1 foundry partners. Our EEPROM products are also tested in house, which enables better planning and inventory management. Our No Obsolescence Policy allows us to have the industry s longest product lifecycles. Our lead times are among the shortest in the industry, providing fast and reliable supply to our customers. Here to Help Throughout Your Product Lifecycle Reliable Product Robust EEPROM technology < 1 PPM fails ~ Zero infant mortality SuperFlash technology memory cell Fastest erases Longest retention Specialty memory products Microchip s Memory Portfolio Bus I 2 C SPI SQI Flash Devices Serial (SPI) Parallel SPI I 2 C UNI/O Bus Microwire Parallel Single-wire Flash Memory Low power Fast programming EERAM Non-volatile, unlimited endurance Serial SRAM High performance EEPROM High reliability Outstanding quality 1 Kb 16 Kb 64 Kb 512 Kb 1 Mb 2 Mb 8 Mb 64 Mb Reliable Support Global technical support Nearly 200 franchised distributors Global training network PRODUCTION Reliable Supply Longest product lifecycles Over 30 years NVM experience Seamless internal and sub-contractor operations 2

3 Serial EEPROM Microchip offers the broadest range of Serial EEPROM devices. Our Serial EEPROMs are low-power, non-volatile memory devices with wide operating ranges, small-size and byte-alterability, making them ideal for data and program storage. Serial EEPROMs can be written more than 1 million times and retain data for over 200 years. Innovative low-power designs and extensive testing have ensured industry-leading endurance and best-in-class quality. Key Features Broad range of densities: 128 bits to 2 Mbit Serial architecture: I 2 C, SPI, UNI/O bus, Single-Wire, Microwire Tiny 2-, 3-, 5-, 6- and 8-pin packages; die, wafer and WLCSP Innovative and low-power designs Industry-leading endurance Factory managed MAC address and serial numbering Wide temperature and voltage range Operating voltage: 1.7 to 5.5V Temperature range: up to 150 C Fast read and write times Flexible Byte-write capability Multiple package options Custom programming options Application-specific serial memory ISO/TS16949-compliant Automotive Grade 0, 1, 2 and 3 with PPAP support Robust Design ESD protection > 4000V Human Body Model (HBM) > 400V Machine Model (MM) > 0V charged device model Latch-up protection > 200 ma on all pins ESD-induced latch-up > V (MM) on Vdd > 400V on all I/O Up to 150 C operation (read and write) Power-On Reset (POR) and Brown-Out Reset (BOR) Effective protection against noisy automotive environments Eliminates false writes Schmitt Trigger input filters for noise reductions Complete traceability including die location on wafer Industry-Leading Testing Microchip s best-in-class field performance is the combined result of world-class manufacturing, wafer-level burn-in and wafer probe quality screens. Microchip s Triple-Test Flow is currently the most robust testing procedure for Serial EEPROM devices in the industry. It tests each cell of each die three times and performs extensive endurance and data retention tests to ensure quality and reliability. Infant mortality of Microchip Serial EEPROMs is among the lowest in the industry due to this extensive testing, excellent fabrication and highly-reliable memory cell design. Triple-Test Flow Microchip tests every cell in wafer form twice, then performs a final test after assembly. 1. Wafer Probe Full-functional tests on % of die and bits; 85 or 125 C 5,000 E/W cycles on all bits Any die with charge loss in any cell between the two probes is rejected to prevent infant mortality. Retention Bake 250 C up to 24 hours (equivalent to years at C) 0 C) Main Goal: Zero Defects 2. Wafer Probe 2nd % bit test (25 C) full-functional screen 3. Assembly and Final Test Full verification of data sheet parameters for functional compliance at die and package level Removal of manufacturing defects to ensure highest quality and reliability Screening out of functional devices that may fail in the future Memory Products 3

4 Serial EEPROM Serial EEPROM Bus Comparison Parameter I 2 C Microwire Single-Wire UNI/O Bus SPI Density Range 128 bits 2 Mbit 1 Kbit 16 Kbit 1 Kbit 1 Kbit 16 Kbit 1 Kbit 2 Mbit Speed up to 1 MHz up to 3 MHz 125 Kbps up to khz up to 20 MHz I/O Pins 2: Clock, Data 4: Clock, CS, DI, DO 1: Clock/Data 1: Clock/Data 4: SCK, CS, DI, DO Package Options PDIP, SOIC, SOIJ, TSSOP, MSOP, 2 3 TDFN, 6 5 DFN, SOT-23, SC70, WLCSP PDIP, SOIC, TSSOP, MSOP, 2 3 TDFN, SOT-23 SOIC, SOT-23, UDFN, XSFN, WLCSP PDIP, SOIC, TSSOP, MSOP, 2 3 TDFN, SOT-23, TO92, WLCSP PDIP, SOIC, SOIJ, TSSOP, MSOP, 2 3 TDFN, 6 5 DFN, SOT-23, WLCSP Security Options Hardware/Software Hardware Software Software Hardware/Software Pricing Fewest features/lowest cost Most features/highest cost Microchip s best-in-class field performance is the combined result of Wafer Level Burn-In and Wafer Probe-Quality Screens. Microchip Serial EEPROM Field Return Data Standard and Specialty/Application-Specific EEPROMs Serial EEPROMs 0.6 Standard EEPROMs Specialty/Application Specific EEPROMs 0.4 I 2 C 128b 2 Mb, V UNI/O Bus 1 16 Kb, V MAC Address Chips EUI-48 & EUI-64 Node Address Micorwire 1 16 Kb, V SPI 1 Kb 2 Mb, V Unique ID 1 Kbit 256 Kbit, V Partial Array Write Protect ½, ¼ and Whole Array WP Options Industry s lowest field return numbers, best suited for automotive applications A decade of improvement Microchip Serial EEPROM Endurance Single-Wire 1 Kbit, V DIMM-DDR2/3/4 Reversible Software Write Protect; I 2 C Extended Temperature 55 to 150 C VESA Monitors DDC1 /DDC2 Interface Very-Low Voltage 1.5V EEPROM ,000 1,000,000 1,500,000 2,000,000 E/W Cycles at 85C Supplier A Supplier B Supplier C Supplier D Microchip Total Endurance Software Model Total Endurance Software Model provides a comprehensive model that helps estimate the endurance and reliability of Microchip Serial EEPROM devices. By providing operating conditions based on your application, all design trade-offs affecting reliability can be accurately estimated both graphically and numerically in PPM, FIT and MTBF modes, saving time and ensuring a truly robust design. All devices from supplier A and B failed before 2 million E/W cycles at 85 C Testing shows zero Microchip EEPROM failures even at 2 million E/W cycles at 85 C 4

5 Specialty EEPROM EUI-48 /EUI-64 MAC Address Chips Need fast, easy and inexpensive access to MAC addresses? Microchip s pre-programmed EUI-48 MAC address chips have a unique ID and require no serialization. These plug-and-play Serial EEPROMs provide low cost easy access to IEEE MAC addresses eliminating the need for programming and serialization on the MCU helping you save cost and get to market faster. For more information visit I 2 C AT24MAC402/602 1 MHz SPI 25AA02E48/E64 10 MHz UNI/O Bus 11AA02E48/E64 khz Microwire 93AA46AE48 2 MHz Plug-and-Play Devices EUI-48 address embedded in a 2 Kbit Serial EEPROM Quick and easy access to IEEE MAC address, read code directly off Serial EEPROM Available in SPI, I 2 C, microwire and UNI/O bus At least 1.5 Kbit of Serial EEPROM memory Available in SOIC, TSSOP, UDFN and SOT-23 packages Write-protected codes EUI-48 and EUI-64 compatible EUI-48: networking, Ethernet, Wi-Fi (IEEE ) and Bluetooth EUI-64: zigbee (IEEE ), MiWi Protocol, FireWire and IPv6 Can be custom programmed in any memory density Contact Microchip sales for more information. Unique ID and Serial Number Memory Products Device Density (Organization) Max. Clock Frequency Operating Voltage (V) Temperature ( C) Endurance E/W Cycles Data Retention Flexibility and Easy to Manage Quickly add EUI-48 to your networking application and get to market faster. Buy code only when needed No added programming and serialization costs, reduce system costs Code with no volume restrictions Unique ID Write-Protected I 2 C EEPROMs Microchip s family of I 2 C EEPROMs offer whole array or partial array Write-Protection (WP) both Hardware and Software options available. Partial array I 2 C EEPROM devices are available from 1 64 Kbit. ½ Array WP User data, real-time updates, data that changes Calibration parameters, unique ID, data that never changes ¼ Array WP 1 16 Kbit 32 and 64 Kbit I 2 C and SPI Serial EEPROMs with Options Ranging From 55 C to 150 C Automotive turbo chargers and exhaust gas recirculation Automotive fan motors, air valves, flaps and spark plugs Aerospace Mining (certifications for use in explosive atmospheres available) Pre-Programmed Serial Number and Unique ID Devices Guaranteed unique serial number across family of devices Available in I 2 C, SPI, or UNI/O interface Serial Number lengths from 32-bit to 256-bit (see device family) Software or Hardware Write-Protection Wide array of package options Unique ID Serial Number Features Write-Protect Packages AT24CS01 1 Kbit ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN AT24CS02 2 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN 24AA02UID 2 Kbits ( 8) 400 khz 1.7 to to M 200 years 24AA025UID 2 Kbits ( 8) 400 khz 1.7 to to M 200 years 11AA02UID 2 Kbits ( 8) khz 1.8 to to M 200 years 25AA02UID 2 Kbits ( 8) 1 MHz 1.8 to to M 200 years Preprogrammed 32-bit Serial Number Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths Preprogrammed 32-bit Serial Number Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths Preprogrammed 32-bit Serial Number Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths Preprogrammed 32-bit Serial Number Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths Memory Products 5 Half Array Half Array PDIP, SOIC, SOT-23 PDIP, SOIC, SOT-23 W, ¼, ½ SOIC, SOT-23 W, ¼, ½ SOIC, SOT-23 AT24CS04 4 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN AT24CS08 8 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN AT24CS16 16 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN AT24CS32 32 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSOT, TSSOP, UDFN AT24CS64 64 Kbits ( 8) 1 MHz 1.7 to to M years Preprogrammed 128-bit Serial Number Whole Array SOIC, TSSOP, UDFN AT24CSW01x 1 Kbit ( 8) 1 MHz 1.7 to to M years AT24CSW02x 2 Kbits ( 8) 1 MHz 1.7 to to M years AT24CSW04x 4 Kbits ( 8) 1 MHz 1.7 to to M years AT24CSW08x 8 Kbits ( 8) 1 MHz 1.7 to to M years 24AA256UID 256 Kbits ( 8) 400 khz 1.7 to to M 200 years Preprogrammed, 128-bit Serial Number with additional 16 bytes user programmable Preprogrammed, 128-bit Serial Number with additional 16 bytes user programmable Preprogrammed, 128-bit Serial Number with additional 16 bytes user programmable Preprogrammed, 128-bit Serial Number with additional 16 bytes user programmable Preprogrammed 32-bit Serial Number Scalable to 48-bit, 64-bit, 128-bit, 256-bit, and other lengths Five configuration options Five configuration options Five configuration options Five configuration options Permanent Upper ⅛ WLCSP WLCSP WLCSP WLCSP PDIP, SOIC, TSSOP

6 Serial EEPROM Device Density (Organization) Max. Clock Frequency Operating Voltage Temperature ( C) Endurance E/W Cycles Data Retention Write-Protect (Hardware) Packages I 2 C Memory Products 24XX bits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years 24XX01/014 1 Kbit ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ½ AT24C01C 1 Kbit ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX02/024 2 Kbits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ½ AT24C02C 2 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX04 4 Kbits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ½ AT24C04C 4 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX08 8 Kbits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ½ AT24C08C 8 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX16 16 Kbits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ½ AT24C16C 16 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX32 32 Kbits ( 8) 400 khz 1.7V to 5.5V 40 to M 200 years W, ¼ AT24C32D 32 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX64/65 64 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M/10 M 200 years W, ¼ AT24C64D 64 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M 200 years ü AT24C128C 128 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array 24XX Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M 200 years ü 2 3 TDFN 2 3 TDFN, MSOP, SC70 UDFN, VFBGA 2 3 TDFN, MSOP, SC70 UDFN, VFBGA 2 3 TDFN, MSOP, WLCSP UDFN, VFBGA 2 3 TDFN, MSOP UDFN, VFBGA 2 3 TDFN, MSOP, WLCSP UDFN, VFBGA, XDFN 2 3 TDFN, MSOP, WLCSP SOIC, SOT-23, TSSOP, UDFN, VFBGA, XDFN 2 3 TDFN, MSOP, WLCSP SOIC, TSSOP, UDFN, XDFN, VFBGA, WLCSP PDIP, SOIC, TSSOP, 2 3 TDFN, 6 5 DFN, WLCSP SOIC, TSSOP, UDFN, VFBGA, WLCSP, XDFN PDIP, SOIC, TSSOP, 6 5 DFN, MSOP, WLCSP AT24C256C 256 Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array SOIC, TSSOP, UDFN, VFBGA 24XX Kbits ( 8) 1 MHz 1.7V to 5.5V 40 to M 200 years ü AT24C512C 512 Kbits ( 8) 1 MHz 1.7V to 3.6V 40 to M 40 years Whole Array PDIP, SOIC, TSSOP, 6 5 DFN, WLCSP SOIC, SOIJ, TSSOP, UDFN, VFBGA, WLCSP 24XX Mbit ( 8) 1 MHz 1.7V to 5.5V 40 to M 200 years ü PDIP, SOIC, SOIJ, 6 5 DFN AT24CM01 1 Mbit ( 8) 1 MHz 1.7V to 5.5V 40 to M 40 years Whole Array SOIC, SOIJ, TSSOP, WLCSP AT24CM02 2 Mbits ( 8) 1 MHz 1.7V to 5.5V 40 to M years Whole Array SOIC, WLCSP UNI/O Bus/Single-Wire EEPROM Products 11XX010 1 Kbit ( 8) khz 1.8V to 5.5 V 40 to M 200 years W, ½, ¼ AT21CS01 1 Kbit ( 8) 125 kbps 1.7V to 3.6V 40 to M years 4x 256-bit zones 2 3 TDFN, MSOP, TO92, WLCSP SOIC, SOT-23, UDFN, XSFN, WLCSP AT21CS11 1 Kbit ( 8) 125 kbps 2.7V to 4.5V 40 to M years 4x 256-bit zones SOIC, SOT-23, XSFN, WLCSP 11XX020 2 Kbits ( 8) khz 1.8V to 5.5 V 40 to M 200 years W, ½, ¼ 11XX040 4 Kbits ( 8) khz 1.8V to 5.5 V 40 to M 200 years W, ½, ¼ 11XX080 8 Kbits ( 8) khz 1.8V to 5.5 V 40 to M 200 years W, ½, ¼ 11XX Kbits ( 8) khz 1.8V to 5.5 V 40 to M 200 years W, ½, ¼ 2 3 TDFN, MSOP, TO92, WLCSP 2 3 TDFN, MSOP, TO92, WLCSP 2 3 TDFN, MSOP, TO92, WLCSP 2 3 TDFN, MSOP, TO92, WLCSP 6

7 Serial EEPROM Products Device Density (Organization) Max. Clock Frequency Operating Voltage Temperature ( C) Endurance E/W Cycles Data Retention Write-Protect (Hardware) Packages SPI EEPROM Products 25XX010A 1 Kbit ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ 2 3 TDFN, MSOP AT25010B 1 Kbit ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, TSSOP, UDFN, VFBGA 25XX020A 2 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ 2 3 TDFN, MSOP AT25020B 2 Kbits ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, TSSOP, UDFN 25XX040A 4 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ 2 3 TDFN, MSOP AT25040B 4 Kbits ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, TSSOP, UDFN, VFBGA 25XX080C / D 8 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ AT25080B 8 Kbits ( 8) 5 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ 25XX160C / D 16 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ AT25160B 16 Kbits ( 8) 5 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ 25XX320A 32 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ AT25320B 32 Kbits ( 8) 5 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ 25XX640A 64 Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ AT25640B 64 Kbits ( 8) 5 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ PDIP, SOIC, TSSOP, 2 3 TDFN, MSOP SOIC, TSSOP, UDFN, VFBGA, WLCSP, XDFN PDIP, SOIC, TSSOP, 2 3 TDFN, MSOP SOIC, TSSOP, UDFN, VFBGA, XDFN PDIP, SOIC, TSSOP, 2 3 TDFN, MSOP SOIC, TSSOP, UDFN, VFBGA, XDFN PDIP, SOIC, TSSOP, 2 3 TDFN, MSOP SOIC, TSSOP, UDFN, VFBGA, XDFN 25XX Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6 5 DFN AT25128B 128 Kbits ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, TSSOP, UDFN, VFBGA 25XX Kbits ( 8) 10 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6 5 DFN AT25256B 256 Kbits ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, SOIJ, TSSOP, UDFN, VFBGA 25XX Kbits ( 8) 20 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ PDIP, SOIC, 6 5 DFN AT Kbits ( 8) 20 MHz 1.8V to 5.5V 40 to M 40 years W, ½, ¼ SOIC, TSSOP, UDFN 25XX Mbit ( 8) 20 MHz 1.8V to 5.5V 40 to M 200 years W, ½, ¼ PDIP, SOIJ, 6 5 DFN AT25M01 1 Mbit ( 8) 20 MHz 1.7V to 5.5V 40 to M years W, ½, ¼ SOIC, SOIJ, UDFN, WLCSP AT25M02 2 Mbits ( 8) 5 MHz 1.7V to 5.5V 40 to M 40 years W, ½, ¼ SOIC, WLCSP Microwire EEPROM Products 93XX46A/B/C 1 Kbit (x8 or x16) 3 MHz 1.8V to 5.5V 40 to M 200 years 1 ma AT93C46D 1 Kbit ( 8/x16) 2 MHz 1.7V to 5.5V 40 to M years Software 15.0 μa (Max) AT93C46E 1 Kbit ( 8) 2 MHz 1.8V to 5.5V 40 to M years Software 15.0 μa (Max) 93XX56A/B/C 2 Kbits (x8 or x16) 3 MHz 1.8V to 5.5V 40 to M 200 years 1 ma AT93C56B 2 Kbits ( 8/x16) 2 MHz 1.8V to 5.5V 40 to M years Software 15.0 μa (Max) 93XX66A/B/C 4 Kbits (x8 or x16) 3 MHz 1.8V to 5.5V 40 to M 200 years 1 ma AT93C66B 4 Kbits ( 8/x16) 2 MHz 1.8V to 5.5V 40 to M years Software 15.0 μa (Max) 93XX76A/B/C 8 Kbits (x8 or x16) 3 MHz 1.8V to 5.5V 40 to M 200 years Hardware 1 ma 93XX86A/B/C 16 Kbits (x8 or x16) 3 MHz 1.8V to 5.5V 40 to M 200 years Hardware 1 ma AT93C86A 16 Kbits ( 8/x16) 2 MHz 1.8V to 5.5V 40 to M years Software 15.0 μa (Max) Densities: 128-bits to 2 Mbit Serial Architecture: I 2 C, SPI, UNI/O Bus, Single-Wire, Microwire Memory Products 7

8 Serial EEPROM Packages More Memory in Less Space! Serial EEPROM devices from Microchip are available in a wide variety of tiny, innovative packages to help minimize your design, save board space and reduce cost. WLCSP: die-sized packages, smallest form factor EEPROM package in the world SC-70: among the smallest 5-lead EEPROM package 5-pin SOT-23 available up to 64 Kb, 8-pin TDFN up to 1 Mb, 8-pin SOIC up to 2 Mb (I 2 C) Density Max. Speed SOIC SOT-23 TSSOP xdfn PDIP MSOP SOIJ SC70 TO92 WLCSP I 2 C Bus V 128 bit 2 Kbits 400 khz ü 5, 6 ü ü ü ü Kbits 400 khz ü 5 ü ü ü ü ü 4, 5 64 Kbits 1 MHz ü 5 ü ü ü ü ü 4, 5, Kbits 1 MHz ü 5 ü ü ü ü ü Kbits 1 MHz ü ü ü ü ü ü 512 Kbits 1 MHz ü 8, 14 ü ü ü ü 8 1 Mbit 1 MHz ü ü ü ü ü 8 2 Mbits 1 MHz ü 8 Microwire Bus V 1 16 Kbits 3 MHz ü 6 ü ü ü ü ü SPI Bus V 1 4 Kbits 10 MHz ü 6 ü ü ü ü 8 64 Kbits 10 MHz ü ü ü ü ü Kbits, 256 Kbits 10 MHz ü ü ü ü ü 512 Kbits 20 MHz ü 14 ü ü ü 1 Mbit 20 MHz ü ü ü ü ü 8 2 Mbits 5 MHz ü 8, 12 UNO Bus V 1 16 Kbits khz ü 3 ü ü ü ü 4 Single-Wire Bus V 1 Kbit 125 kbps ü Number indicates alternate package pin counts available WLCSP ball array currently available, contact marketing for more information 8-pad, 1.80 mm x 2.20 mm x 0.40 mm body, 0.40 mm Pitch Extra Thin DFN (XDFN) 8-lead, 2.00 mm x 3.00 mm x 0.55 mm body, 0.50 mm Pitch, Ultra Thin Dual Flat No Lead (UDFN) 8-lead, 2.00 mm x 3.00 mm x 0.75 mm body, 0.50 mm Pitch, TDFN 8-lead, 2.00 mm x 3.00 mm x 0.90 mm body, 0.50 mm Pitch, DFN Available Packages (not to scale) 5-pin SC-70 (LT) 2 2 mm 3-pin SOT (TT) 5- & 6-pin SOT (OT) mm 3 3 mm 8-pin TDFN (MC/MNY) 2 3 mm DFN (XDFN) 1.8 x 2.2 mm 8-pin MSOP (MS) 3 5 mm 8-pin TSSOP (ST) mm 8-pin SOIC (SN) 5 6 mm 8-pin DFN (MF) 5 6 mm 8-pin SOIC (SM) 5 8 mm 8-pin PDIP (P) mm WLCSP: World s Smallest EEPROM Package The Wafer-Level Chip Scale Package (WLCSP) from Microchip is a bumped die with a redistribution layer to route the bond pads to the bumps. True die-sized packages Industry s smallest package form factor Lowest profile package Available in I 2 C, SPI, UNI/O bus Compatible with standard surface-mount assembly lines Fit a large density into a small space Possible Applications Mobile phones Security camera Sensors Smart cables Hearing aid Medical disposables Portable electronics 8

9 Serial SRAM Microchip s Serial SRAM family provides a way to easily and inexpensively add external RAM to almost any application. These serial devices use less power and fewer I/O connections than traditional parallel SRAM, and they allow you to use a smaller microcontroller with additional on-board RAM. Microchip s SPI-compatible Serial SRAM devices are available in 64 Kbits, 256 Kbits, 512 Kbits and 1 Mbit options and up to 20 MHz. The 512 Kbits and 1 Mbit parts support data backup via an external battery/coin cell connected Vbat pin. These 8-pin devices have unlimited endurance and zero write times V V 1 Mbit 23A1024/20 MHz 23LC1024/20 MHz 512 Kbits 23A512/20 MHz 23LC512/20 MHz 256 Kbits 23A256/16 MHz 23K256/20 MHz 64 Kbits 23A640/16 MHz 23K640/20 MHz Key Features SPI Bus, 20 MHz Volatile memory Operating voltage: V and V Infinite endurance Zero write speeds Low-power consumption Automotive Grade 1 with PPAP support The Serial SRAM Advantage Key Benefits Lower system costs innovative products, tiny packages, low-power consumption, fewer I/O pins, small form factor Save I/O pins on the MCU more compact designs, add additional features Secure data with write-protect options Robust designs with broad operating conditions Typical Applications Metering Point-of-Sale (POS) terminals Printers Internet radio Ethernet Wi-Fi Replace parallel RAM Any application needing low-cost RAM Flexible RAM Expansion Add features to your current microcontroller and get to market faster. Add functionality to your current design No need to buy a larger microcontroller just for the RAM Familiar 4-pin SPI interface Reduce cost in your current design Scratchpad, buffering, high-endurance applications Feature Traditional Parallel SRAM Microchip s Serial SRAM I/O Connection to MCU Standby Current 3 ma 1 μa Active Current 50 ma 1 10 ma Lowest Operating Voltage 3.0V 1.7V Footprint mm 2 20 mm 2 Smallest Packages 28-pin TSSOP, 28-pin SOIC 8-pin TSSOP, 8-pin SOIC MCU RAM MCU RAM Parallel RAM... Parallel SRAM MCU I/O lines SPI 4 I/O lines Serial SRAM Stand-alone Serial SRAM offering greater design flexibility and the opportunity for RAM expansion Serial SRAM Products Device Density (Organization) Max. Clock Frequency Operating Voltage (A, K) Temperature (I, E) ( C) Read Current (ma) Max. Standby Current Packages Battery Back-Up 23X640 8 Kbits (64 KB) 20 MHz 1.8V, 3V 40 to ma 4 µa PDIP, SOIC, TSSOP No 23X Kbits (256 KB) 20 MHz 1.8V, 3V 40 to ma 4 µa PDIP, SOIC, TSSOP No 23X Kbits (512 KB) 20 MHz 1.8V, 3V, 5V 40 to ma 4 µa PDIP, SOIC, TSSOP Yes 23X Kbits (1 MB) 20 MHz 1.8V, 3V, 5V 40 to ma 4 µa PDIP, SOIC, TSSOP Yes 1. Voltage Range: A = V, K = V 2. All devices are RoHS-compliant Memory Products 9

10 NOR Flash What is SuperFlash Technology? Microchip s SuperFlash technology is an innovative, highly reliable and versatile type of NOR Flash memory. SuperFlash technology memory is much more flexible and reliable than competing non-volatile memories. This technology utilizes a split-gate cell architecture which uses a robust thick-oxide process that requires fewer mask steps resulting in a lowercost nonvolatile memory solution with extremely fast erase time, excellent data retention and higher reliability. Memory Cell Structure Comparison Thicker tunnel oxide reduces leakage improving data retention and reliability. Source Poly 1 Poly 2 Split Gate SuperFlash Technology Drain SuperFlash Technology Advantages Fast, fixed program and erase times ~ 40 ms for SuperFlash technology vs. more than a minute for conventional 64 Mbits Results in improved manufacturing efficiency and lower costs No pre-programming or verification required prior to erase Results in significantly lower power consumption Superior reliability K cycles and years data retention Inherent small-sector size 4 KB erase sector vs. 64 KB Results in faster re-write operations and contributes to lowering overall power consumption Serial and Parallel Flash Serial Flash (25 and 26 Series) are designed for a wide variety of applications in consumer electronics, computing, networking and industrial spaces. Small form factor, standard pinouts and command sets make Serial Flash easy to design in and cost competitive. Our Parallel Flash (39 and 38 Series) are ideal for GPS/navigation and other mobile devices that require Executein-Place (XIP) performance and for demanding industrial and automotive applications. Times Faster Erase Times Than Competitors and Chip Erase Time Remains the Same Across All Densities Source Poly 2 Poly 1 Stacked Gate (Conventional Flash) Drain Density (MB) Microchip Competitor 1 Competitor 2 Competitor 3 Competitor 4 8 MB Firmware Flash Microchip is the sole remaining supplier of 8 Mb Firmware Flash. This SuperFlash technology memory device is compliant with the Intel Low Pin Count (LPC) Interface Specification and is intended to store system BIOS in applications such as PCs, point-of-sale systems, set-top boxes, network boards and other embedded CPU applications. FWH devices (49LF008A) incorporate Intel s proprietary FWH interface protocol used in the Intel 8XX Series Hub Architecture chipsets. LPC Flash devices (49LF080A) comply with the standard Intel Low Pin Count Interface Specification

11 Serial Flash Serial Flash Serial Flash Key Features Serial peripheral interface: Mode 0 and Mode 3 Small footprint 8-pin SOIC, low-profile 8-contact USON, WSON, 8-bump XFBGA, WLCSP Operating voltage V, V Clock frequency up to 104 MHz Flexible erase capability 4 Kbyte uniform sector erase 32/64 Kbyte block erase Chip erase Endurance: Data retention: years (min) Fast sector erase or block erase time: 18 ms Byte program time: 7 µs Active read current: 10 ma Standby current: 5 µa Proven technology CMOS SuperFlash technology boosts data retention and endurance, and reduces erase time and power consumption, making Microchip Serial Flash ideal for portable designs. Serial Flash Applications Home networking HDTVs Bluetooth Wearable devices Tablets Notebook Printers Wireless LAN Set-top boxes Digital radios Automotive Servers IoT devices Smart appliances Smart meters Serial SPI Flash 25 Series Serial SPI Flash is a small, low-power Flash memory that features a Serial Peripheral Interface (SPI) and pin-for-pin compatibility with industry-standard SPI EEPROM devices. Its small footprint reduces ASIC controller pin count and packaging costs, saves board space and keeps system costs down. Offering lower power consumption and fewer wires than Parallel Flash, Serial SPI Flash is the ideal cost-efficient data transfer solution. Serial SPI Flash-Specific Features Densities up to 16 MB Full SPI protocol compatibility Serial Quad I/O (SQI ) Flash 26 Series SQI Flash memory uses 4-bit multiplexed I/O serial protocol, boosts performance while maintaining the compact form factor of standard SPI Flash. SQI devices can be used in Quad, Dual or SPI mode so it is backward compatible with SPI devices. SQI Flash-Specific Features 4-bit multiplexed I/O serial protocol > 300 Mbps sustained read Density: 4 Mb to 64 Mb Software parameter and overlay block locking Security ID Page mode programming Serial Flash Discoverable Parameters (SFDP) Automotive Grade 2 and 3 with PPAP support Flash Performance Comparison Parallel 16 (70 ns) Microchip 26 Series SQI (80 MHz) Parallel 8 (70 ns) Serial SPI (66 MHz) Sustained Data Transfer Rate (MB/sec) Memory Products 11

12 Serial Flash Serial Flash Small Footprint Serial Peripheral Interface Flash Bus Product Density Organization Max. Clock Frequency Operating Voltage (V) Temperature Range ( C) E/W Endurance (Minimum) Data Retention (Minimum) (Years) Write Speed (Typical) Max. Standby Current Special/Unique Features Packages* SST25VF512A 512 Kb 64K 8 33 MHz to +85 (Byte 8 µa Auto address increment programming, 8C-WSON SST25VF010A 1 Mb 128K 8 33 MHz to +85 (Byte 8 µa Auto address increment programming, 8C-WSON x1, x2, x4 x4 x1, x2 x1 SST25VF020B 2 Mb 256K 8 80 MHz SST25WF020A 2 Mb 256K 8 40 MHz SST25PF040C 4 Mb 512K 8 40 MHz SST25VF040B 4 Mb 512K 8 40 MHz SST25VF080B 8 Mb 1M 8 40 MHz SST25VF016B 16 Mb 2M 8 50 MHz SST25WF040B 4 Mb 512K 8 40 MHz SST25WF080B 8 Mb 1M 8 40 MHz SST26VF Mb 2M 8 80 MHz SST26VF Mb 4M 8 80 MHz SST26WF040B 4 Mb 512K 8 SST26WF080B/BA 8 Mb 1M 8 SST26WF016B/BA 16 Mb 2M 8 SST26WF064C 64 Mb 8M x 8 SST26VF016B 16 Mb 2M 8 SST26VF032B/BA 32 Mb 4M MHz 104 MHz 104 MHz 104 MHz 104 MHz 104 MHz to to +105 (minimum) (minimum) (minimum) (minimum) (minimum) (minimum) (minimum) (minimum) (minimum) µs (Word 3 ms (Page 4 ms/256 bytes 7 µs (Word 7 µs (Word 7 µs (Word 1 ms (Page 1 ms (Page 1 ms (Page 1 ms (Page 1.5 ms page 1 ms (Page 1 ms (Page 1.5 ms (Page 1 ms (Page 1 ms (Page 5 µa 10 µa 50 µa 5 µa 5 µa 5 µa 10 µa 10 µa 15 µa 15 µa 40 µa 40 µa 40 µa 40 µa 45 µa 45 µa Auto address increment programming, Single-input page program, Fast read, program and erase Software Write Protection- Write protection through Block-Protection bits Auto address increment programming, Auto address increment programming, Auto address increment programming, Dual output and dual I/O read, Singleand dual-input page program, Fast read, program and erase Dual output and dual I/O read, Singleand dual-input page program, Fast read, program and erase Serial Quad I/O (SQI ) read/program/ erase, Burst read, Index jump feature, Individual block read and write protection. Serial Quad I/O (SQI) read/program/erase, Burst read, Index jump feature, Individual block read and write protection. Fast read, program and erase 1, 2, 4 Serial Peripheral Interface (SPI) Protocol -Burst Modes, Software Write Protection: Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks 1, 2, 4 read, Single-and quad-input page program, Burst read, Write suspend, Individual block read and write protection, 1, 2, 4 read, Single-and quad-input page program, Burst read, Write suspend, Individual block read and write protection, 1, 2, 4, DTR read, Single-and quadinput page program, Burst read, Write suspend, Individual block read and write protection, 1, 2, 4 read, Single-and quad-input page program, Burst read, Write suspend, Individual block read and write protection, 1, 2, 4 read, Single-and quad-input page program, Burst read, Write suspend, Individual block read and write protection, 8C-WSON 8C-WSON, 8C-USON, 9B-WLCSP 8C-USON 8L-SOIC 8C-WDFN 8C-WSON 8C-WSON, 8B-XFBGA 8C-WSON 8C-USON, 9B-WLCSP 8C-USON, 9B-WLCSP 8L-SOIJ, 8C-WSON 8L-SOIJ, 8C-WSON 8C-USON 8L-SOIC 8C-WDFN 8B-XFBGA 8C-WSON, 8C-USON, 8B-WLCSP 8C-WSON, 8B-WLCSP 8L-SOIJ, 16L-SOIC, 8C-WSON, 24B-TBGA 8L-SOIJ, 8C-WSON 8L-SOIJ, 8C-WSON, 24B-TBGA SST26VF064B/BA 64 Mb 8M MHz to +105 (minimum) 1 ms (Page 45 µa 1, 2, 4 read, Single-and quad-input page program, Burst read, Write suspend, Individual block read and write protection, 8L-SOIJ, 16L-SOIC, 8C-WSON, 8C-TDFN-S, 24B-TBGA *Data varies for different devices, please refer to the datasheet for details. 12

13 Parallel Flash Parallel Flash Multi-Purpose Flash Devices (MPF Devices) Multi-Purpose Flash Plus Devices (MPF+ Devices) 39 Series Multi-Purpose Flash and Multi-Purpose Flash Plus make up a family of Parallel Flash memory products that deliver high performance, low-power consumption, superior reliability and small sector size. Based on Microchip s SuperFlash technology, MPF and MPF+ provide faster program, erase and read times than conventional Flash, thereby saving power consumption and increasing manufacturing throughput. In addition to offering 3V and 5V memory products, MPF devices and MPF+ devices provide 1.8V that deliver significant power savings compared to industry standard Flash. Ideal for space-constrained applications, this family offers the industry s smallest standard packages, the XFLGA and WFBGA, both as small as 4 6 mm. Advanced Multi-Purpose Flash Plus Devices (Advanced MPF+ Devices) 38 Series Advanced MPF+ memory devices incorporate advanced security and protection features, page read access and better write programming into the standard MPF+ family. Currently these devices are available on 64 Mb only. Parallel Flash Applications Bluetooth GPS Wi-Fi/WiMAX Mobile phones DSL/cable modems Servers and routers Set-top boxes Digital cameras Industrial Automotive infotainment Parallel Flash Key Features Densities from 512 Kb through 64 Mb Hardware reset/boot block/erase suspend Security ID and page read/write on 64 Mb Operating voltages: V, V, V Low-power consumption Active current: 5 ma Standby current: 3 µa Fast read access times 55 ns and 70 ns (39 series), 25 ns (38 series) Fast programming* 7 µs per word (typical, 39 series) 1.75 µs per word (typical, 38 series) Flexible erase capability and fast erase times* 2 Kword sector erase: 18 ms 32 Kword block erase: 18 ms Chip erase: 70 ms Small uniform sector sizes: 2 Kword and 32 Kword Commercial and industrial operating temperatures Endurance: Data retention: years (min) MPF+ devices offer additional features Erase suspend Boot block Hardware reset features Advanced protection features (38 series) Memory Products 13

14 Parallel Flash Parallel Flash High Performance, Low-Power Bus Product* Density Organization Access Time Operating Voltage Temperature Range ( C) E/W Endurance (Minimum) Data Retention (Minimum) (years) Write Spped (Typical) Typ. Standby Current Write Protect Hardware Write Protect Software Protected Array Size Special/Unique Features Packages** Parallel Flash Memory SST39SF010A 1 Mb 128K 8 70 ns V (Byte 30 µa N/A 32L-PLCC, 32L-PDIP, 32L-TSOP SST39LF010 1 Mb 512K 8 55 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39VF010 1 Mb 512K 8 70 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39LF020 2 Mb 512K 8 55 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39SF020A 2 Mb 256K 8 55/70 ns V (Byte 30 µa N/A 32L-PLCC, 32L-PDIP, 32L-TSOP x8 SST39VF020 2 Mb 512K 8 70 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39SF040 4 Mb 512K 8 70 ns V (Byte 30 µa N/A 32L-PLCC, 32L-PDIP, 32L-TSOP SST39LF040 4 Mb 512K 8 55 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39VF040 4 Mb 512K 8 70 ns V (Byte 1 µa N/A 48B-TFBGA, 32L-TSOP, 32L-PLCC SST39VF168X 16 Mb 2M 8 70 ns V 7 µs (Byte 3 µa Y 64 KB 48B-TFBGA, 48L-TSOP SST39LF200A 2 Mb 128K ns V (Word 3 µa N/A 48B-TFBGA, 48L-TSOP SST39VF200A 2 Mb 128K ns V (Word 3 µa N/A 48B-TFBGA, 48L-TSOP, 48B-WFBGA SST39LF40XC 4 Mb 256K ns V 7 µs (Word 3 µa Y 8 KB Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP, 48B-WFBGA SST39WF400B 4 Mb 256K ns V 28 µs (Word 40 µa N/A 48B-TFBGA, 48B-WFBGA, 48B-XFBGA SST39VF40XC 4 Mb 256K ns V 7 µs (Word 3 µa Y 8 KB Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP, 48B-WFBGA SST39WF800B 8 Mb 512K ns V 28 µs (Word 40 µa N/A 48B-TFBGA, 48B-WFBGA, 48B-XFBGA SST39LF80XC 8 Mb 512K ns V 7 µs (Word 3 µa Y N/A Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP, 48B-WFBGA x16 SST39VF80XC 8 Mb 512K ns V 0 to 70 7 µs (Word 3 µa Y N/A Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP, 48B-WFBGA SST39WF160X 16 Mb 1M ns V 0 to µs (Word 40 µa Y 64 KB 48B-TFBGA, 48B-WFBGA, 48B-XFBGA SST39VF160XC 16 Mb 1M ns V 7 µs (Word 3 µa Y 8 KB Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP, 48B-WFBGA SST39VF160X 16 Mb 2M 8 70 ns V 7 µs (Byte 3 µa Y 64 KB 48B-TFBGA, 48L-TSOP SST39VF320XB 32 Mb 2M ns V 7 µs (Word 4 µa Y 32 KB 48B-TFBGA, 48L-TSOP SST39VF320XC 32 Mb 2M ns V 7 µs (Word 4 µa Y 8 KB Low power; Small erase sector; Industry standard command set and boot block structure 48B-TFBGA, 48L-TSOP SST38VF640X 64 Mb 4M ns V 7 µs/1.75 µs (Write Buffer 3 µa Y Y 32 KB/ 8 KB Low power; Small erase sector Industry standard command set and boot block structure, Security features 48B-TFBGA, 48L-TSOP SST38VF640XB 64 Mb 4M ns V 7 µs/1.75 µs (Write Buffer 3 µa Y Y 32 KB/ 8 KB Low power; Industry standard command set and boot block structure, Security features 48B-TFBGA, 48L-TSOP 14

15 Parallel EEPROM Faster Real Time Microchip is the world s leading manufacturer of parallel EEPROM devices. Parallel EEPROMs enable stored data to be updated byte-by-byte or by full sector, providing design flexibility. The parallel interface devices offer faster read times than serial Interface protocols. Microchip provides a complete selection of densities (64 Kbit to 1 Mbit), operating voltages and device packages. Microchip s Battery Voltage (2.7V), low voltage (3V) and 5V devices are used extensively across a broad spectrum of products, including telecommunications, avionics and military applications. Key Features Parallel Non-volatile memory Operating voltage: V, V, V Fast write options Industrial and Mil temperature ( 55 to 125ºC) options Ceramic hermetic packages Dual marking of specified military drawings and Microchip part numbers Typical Applications Telecommunications Avionics Aircraft engine controllers Mission critical 2-way radio communications Military systems Key Benefits Hardware and software data protection Built in error correction circuts High reliability Memory Products 15

16 Parallel EEPROM MIL Product Root/SMD Part Number Density Organization Vcc (V) AT28C /06 11/14 AT28C256E /08 13/16 AT28C256F /15 AT28HC /03 Industrial 256 Kbits 32 Kbits x V Endurance (10 yr Data Retention) Access Speed (ns) CERAMIC Package 10k Write Cycles 150, 200, 250 CERDIP (28D) CLCC (32L) FLATPACK (28F) k Write Cycles 150, 200, 250 CERDIP (28D) CLCC (32L) FLATPACK (28F) 10k Write Cycles 150 (3 ms Fast Write Option) CERDIP (28D) CLCC (32L) FLATPACK (28F) 10k Write Cycles 90, 120 CERDIP (28D) CLCC (32L) FLATPACK (28F) AT28HC256E k Write Cycles 90, 120 CERDIP (28D) CLCC (32L) FLATPACK (28F) AT28HC256F /04 10k Write Cycles 90, 120 (3 ms Fast Write Option) CERDIP (28D) CLCC (32L) FLATPACK (28F) AT28C /03/05/07 1 Mbit 128 Kbits x 8 10k Write Cycles 120, 150, 200, 250 CERDIP (32D) CLCC (32L) FLATPACK (32F) AT28C010E k Write Cycles 120, 150 CERDIP (32D) CLCC (32L) FLATPACK (32F) Root Part Number Density Organization Vcc (V) Endurance (10yr Data Retention) Access Speed (ns) Package AT28BV64B 64 Kbits 8 Kbits x 8 10k Write Cycles 200 PLCC (32J) SOIC (28S) TSOP (28T) AT28BV Kbits 32 Kbits x 8 10k Write Cycles 200 PLCC (32J) SOIC (28S) TSOP (28T) AT28C64B 64 Kbits 8 Kbits x 8 AT28C256 10k Write Cycles 150 PLCC (32J) PDIP (28P) SOIC (28S) TSOP (28T) 10k Write Cycles 150 PLCC (32J) PDIP (28P) SOIC (28S) TSOP (28T) AT28C256E 256 Kbits 32 Kbits x 8 k Write Cycles 150 PLCC (32J) SOIC (28S) TSOP (28T) AT28C256F 10k Write Cycles 150 (3 ms Fast Write Option) PLCC (32J) SOIC (28S) TSOP (28T) AT28C010 10k Write Cycles 120, 150 PLCC (32J) TSOP (32T) 1 Mbit 128 Kbits x 8 AT28C010E k Write Cycles 120, 150 PLCC (32J) TSOP (32T) AT28HC64B 70, 90, 120 PLCC (32J) SOIC (28S) TSOP (28T) 64 Kbits 8 Kbits x 8 10k Write Cycles AT28HC64BF 70, 90, 120 (2 ms Fast Write Option) PLCC (32J) SOIC (28S) TSOP (28T) AT28HC256 10k Write Cycles 70, 90, 120 PLCC (32J) SOIC (28S) TSOP (28T) AT28HC256E 256 Kbits 32 Kbits x 8 k Write Cycles 90, 120 PLCC (32J) SOIC (28S) TSOP (28T) AT28HC256F 10k Write Cycles 90 (3 ms Fast Write Option) PLCC (32J) SOIC (28S) TSOP (28T) AT28LV010 1 Mbit 128 Kbits x k Write Cycles 200 PLCC (32J) TSOP (32T) 16

17 EERAM EERAM is SRAM with EEPROM backup in a single, low-cost, low-power chip, creating a solution that is more reliable than a battery-backed SRAM at a lower cost than FRAM. Key Features Serial interface: I 2 C Bus, 1 MHz Unlimited E/W cycles on SRAM block Zero write time External auto save trigger Data backed up in EEPROM automatically at power down or Vdd fail Data recalled from EEPROM automatically at power-up Auto save time < 40 ns (needs external cap) Connect a (~20 μf) capacitor to pin 1 Low power 1 ma/3 ma max. read/write <1 μa standby current 8-pin packages (SOIC, PDIP, TSSOP) Auto-EEPROM backed most reliable (no battery needed) Single chip to replace RAM, EEPROM and FRAM in application Automotive Grade 1 with PPAP support Typical Applications Metering Printers Applications needing unlimited writes/endurance Applications needing zero wait states 4K/16K I 2 C EERAM Products Product Density Vcc Range Max. Clock Frequency Temperature Ranges Packages 47l04 4 Kbits V 1 MHz 47C04 4 Kbits V 1 MHz 47l16 16 Kbits V 1 MHz 47C16 16 Kbits V 1 MHz C 40 to +125 C C 40 to +125 C C 40 to +125 C C 40 to +125 C PDIP, SOIC, TSSOP PDIP, SOIC, TSSOP PDIP, SOIC, TSSOP PDIP, SOIC, TSSOP Unlimited E/W Cycles Zero Write Time I 2 C Bus Data backed in EEPROM automatically SRAM Shadow EEPROM Save Recall MCU/ ASIC I 2 C SRAM EEPROM Save Recall EERAM External Cap Supply Monitor Save Recall Control External Save Trigger Memory Products 17

18 Automotive Memory Products Microchip Technology has developed industry-leading processes for each step in the design, manufacturing and testing phases of its memory products and has become one of the most respected leaders in supply of these devices to the automotive industry worldwide. Temperature Range Now offering I 2 C and SPI Serial EEPROMs with optional range from 55 to 150 C. Automotive turbo chargers and exhaust gas recirculation Automotive fan motors, air valves, flaps and spark plugs Areas under the vehicle hood Automotive Grade ISO TS compliant (inc. VDA6.1) quality manufacturing systems Restricted site assembly Production Parts Approval Process (PPAP) Exceeds AEC Q- product qualification requirements Special screening and test methods including Maverick lot testing Long product life cycle in support of automotive industry 15 year supply requirement Serial SRAM Looking for RAM also? Microchip s SPI Serial SRAM products offer: A quick and easy way to add external RAM 4-pin SPI interface 20 MHz clock speed No write cycle time Flash Unique Flash Cell Design Thicker tunnel oxide reduces leakage improving data retention and reliability. EEPROM: Robust Design ESD protection > 4000 V Human Body Model (HBM) > 400 V Machine Model (MM) > 0 V Charged Device Model Latch-up protection > 200 ma on all pins ESD induced latch-up > V (MM) on Vdd; > 400 V on all I/O > 1 M cycles endurance and > 200 years data retention Up to 150 C operation (read and writes) Power-On Reset (POR) and Brown-Out Reset (BOR) Effective protection against noisy automotive environments Source Poly 1 Poly 2 Split Gate SuperFlash Technology Eliminates false writes Schmitt Trigger input filters for noise reduction Complete traceability including die location on wafer Drain Extended Temperatures H-Temp 40 to 150 C E-Temp 40 to 125 C I-Temp 40 to 85 C All Major Bus Types SPI 25LCXX I 2 C 24LCXX Microwire 93LCXX UNI/O Bus 11LCXX Complete Product Lines Density: 128 bits to 1 Mbit Speed: Up to 20 MHz Both Serial and Parallel SQI Flash Device 26XX Parallel 39XX Tools MPLAB Starter Kit for Serial Memory Products Total Endurance Software Verilog and IBIS Models Microchip Advanced Parts Selector (MAPS) Serial EEPROM Highest Quality QS9000; ISO/TS16949 AEC-Q-oompliant RoHS-compliant Long product life cycles Extended Temperatures Grade 2 40 to 105 C Grade 3 40 to 85 C Flash Highest Quality QS9000; ISO/TS16949 AEC-Q-oompliant RoHS-compliant Long product life cycles Innovative Packages and Dies PDIP, SOIC, TSSOP, T-DFN, MSOP, SOT-23, SC70, WLCSP, Die and Wafer Operating Voltages LC: V AA: V C: V VL: V Reliability High endurance: 1 million E/W cycles Data retention: Over 200 years Tools Serial Flash Evaluation Kit Parallel Flash Evaluation Kit Reliability High endurance: min. Data retention: Over years 18

19 Resources Development Tools Reduce development time and cost with Microchip s development tools. Competitive market conditions force businesses to examine every aspect of their product life cycle to maximize productivity and minimize expense. Easy-to-learn, low-cost common development tools are one way to reduce risk and get to market faster. MPLAB Starter Kit for Serial Memory Products (DV243003) Reduce time to market and create a rock-solid design using the MPLAB Starter Kit for Serial Memory Products. It includes everything necessary to quickly develop a robust and reliable Serial EEPROM design, and greatly reduces the time required for system integration and hardware/software fine-tuning. 3.3 V and 5.0 V on-board voltage selection Supports Microchip UNI/O bus, I 2 C, SPI and Microwire Serial EEPROMs 1.8V to 5.5V external voltage support Includes free copy of MPLAB X IDE USB interconnect Serial SuperFlash Kit 2 (AC243008) The Serial SuperFlash Kit 2 allows you to evaluate Serial Flash and quickly develop and test firmware using known good hardware. The kit includes three Serial Flash boards each having a serial flash soldered on it. The Serial Flash device included are SST25PF040C, SST25VF020B and SST25WF080B. SQI SuperFlash Kit 1 (AC243009) The SQI SuperFlash Kit 1 allows you to evaluate SQI Flash and quickly develop and test firmware using known good hardware. The kit includes three Serial flash boards each having a SQI flash soldered on it. The SQI Flash device included are SST26VF064B, SST26VF032B and SST26WF016B. Serial EEPROM Plug-In Module PICtail Board Pack (AC243003) The Serial EEPROM Plug-In Module PICtail Board Pack is a series of boards designed around Microchip s Serial EE- PROM devices. The boards are designed to interface with the PICtail Plus connector as well as the MPLAB Starter Kit for Serial Memory Products and the PICkit 3 board, allowing you to get started right out of the box. Plug-and-play with PICtail Plus connector and PICkit 3 connector Test points for oscilloscope connections for firmware debugging (I 2 C and UNI/O only) Microwire Buses are included for maximum flexibility in development of your application Parallel SuperFlash Technology Kit 1 (AC ) The Parallel Flash PICtail Plus Daughter Board is an evaluation board designed to interface with the PICtail Plus connector found on the Explorer 16 Development Board. The Parallel SuperFlash Technology Kit 1 contains two Parallel Flash PICtail Plus Daughter Boards. Each board has a parallel Flash device soldered on it. The parallel Flash devices included are SST38VF6401 and SST39VF1601C. Memory Products 19

20 Support Microchip is committed to supporting its customers in developing products faster and more efficiently. We maintain a worldwide network of field applications engineers and technical support ready to provide product and system assistance. For more information, please visit Technical Support: Evaluation samples of any Microchip device: Knowledge base and peer help: Sales and Global Distribution: Training If additional training interests you, Microchip offers several resources including in-depth technical training and reference material, self-paced tutorials and significant online resources. Overview of Technical Training Resources: MASTERs Conferences: Developer Help Website: Technical Training Centers: Sales Office Listing AMERICAS Atlanta, GA Tel: Austin, TX Tel: Boston, MA Tel: Chandler, AZ (HQ) Tel: Chicago, IL Tel: Dallas, TX Tel: Detroit, MI Tel: Houston, TX Tel: Indianapolis, IN Tel: Tel: Los Angeles, CA Tel: Tel: Raleigh, NC Tel: New York, NY Tel: San Jose, CA Tel: Tel: Canada - Toronto Tel: EUROPE Austria - Wels Tel: Denmark - Copenhagen Tel: Finland - Espoo Tel: France - Paris Tel: Germany - Garching Tel: Germany - Haan Tel: Germany - Heilbronn Tel: Germany - Karlsruhe Tel: Germany - Munich Tel: Germany - Rosenheim Tel: EUROPE Israel - Ra anana Tel: Italy - Milan Tel: Italy - Padova Tel: Netherlands - Drunen Tel: Norway - Trondheim Tel: Poland - Warsaw Tel: Romania - Bucharest Tel: Spain - Madrid Tel: Sweden - Gothenberg Tel: Sweden - Stockholm Tel: UK - Wokingham Tel: ASIA/PACIFIC Australia - Sydney Tel: China - Beijing Tel: China - Chengdu Tel: China - Chongqing Tel: China - Dongguan Tel: China - Guangzhou Tel: China - Hangzhou Tel: China - Hong Kong SAR Tel: China - Nanjing Tel: China - Qingdao Tel: China - Shanghai Tel: China - Shenyang Tel: China - Shenzhen Tel: China - Wuhan Tel: China - Xiamen Tel: China - Xian Tel: ASIA/PACIFIC China - Zhuhai Tel: India - Bangalore Tel: India - New Delhi Tel: India - Pune Tel: Japan - Osaka Tel: Japan - Tokyo Tel: Korea - Daegu Tel: Korea - Seoul Tel: Malaysia - Kuala Lumpur Tel: Malaysia - Penang Tel: Philippines - Manila Tel: Singapore Tel: Taiwan - Hsin Chu Tel: Taiwan - Kaohsiung Tel: Taiwan - Taipei Tel: Thailand - Bangkok Tel: Vietnam - Ho Chi Minh Tel: /31/17 Microchip Technology Inc W. Chandler Blvd. Chandler AZ, The Microchip name and logo, the Microchip logo, MPLAB, SuperFlash and UNI/O are registered trademarks and MiWi, MPF, PICkit, PICtail, Serial Quad I/O, SQI and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. All other trademarks mentioned herein are property of their respective companies. 2017, Microchip Technology Incorporated. All Rights Reserved. 12/17 DS B