CA3046, CA3086, CA3127 Transistor Array SPICE Models

Transcription

1 TM CA346, CA386, CA3127 Transistor Array SPICE Models Application Note June 1997 MM971 tle anr y E thor ds r ortio i or) () CI Introduction This application note describes the SPICE transistor models for the bipolar devices that comprise the CA346, CA386, and the CA3127 High Frequency NPN Transistor Arrays. Model Description While this model was developed for the PSPICE simulator from MicroSim Corporation, it may be adaptable to other simulators. The performance curves included in this document were generated using PSPICE. SPICE simulations should not be considered a substitute for breadboarding a circuit; rather, they should be used to select preliminary component values and to verify the validity of a design approach. This model emulates typical rather than worst case devices, at an ambient temperature of 25 o C. Model Performance Several model performance curves have been included to show how accurately the models match the actual device characteristics. The squares shown in the graphs represent data points taken from the data sheet. These data points show that the model correlates closely to the data sheet specifications. Parameters Not Modeled Some effects haven t been included in this model. The major exclusions are listed below: Temperature Effects Breakdown Effects f T vs V CE Variations Reverse Operation Characteristics k INTERSIL or Intersil and Design is a trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 21, All Rights Reserved

2 PSPICE Listing COPYRIGHT 1997 INTERSIL CORPORATION ALL RIGHTS RESERVED CA346 PSpice MODEL REV: BJT MODEL.model CA346 NPN + (IS = 1.E 15 XTI= 3.E + EG = 1.11E + VAF = E VAR = E + 2 BF = 145.7E + ISE = E 15 NE = 1.48E + + IKF = 46.7E 3 XTB =.E + BR =.E + ISC = 1.5E 15 + NC = 2.E + IKR = 1.E 3 RC = 1.E + CJC = E 15 + MJC =.333E VJC =.75E FC = 5.E 1 CJE = 2E 12 + MJE =.336E VJE =.75E TR = 1.E 9 TF = 277.1E 12 + ITF = 1.75E XTF = 39.38E + VTF = 16.37E + PTF =.E + + RE =.E + RB =.E + COPYRIGHT 1997 INTERSIL CORPORATION ALL RIGHTS RESERVED CA386 PSpice MODEL REV: BJT MODEL.model CA386 NPN + (IS = 1.E 15 XTI= 3.E + EG = 1.11E + VAF = E VAR = E + 2 BF = 156.6E + ISE = E 15 NE = 1.47E + + IKF = 36.7E 3 XTB =.E + BR =.E + ISC = 1.5E 15 + NC = 2.E + IKR = 1.E 3 RC = 1.E + CJC = E 15 + MJC =.333E VJC =.75E FC = 5.E 1 CJE = 2E 12 + MJE =.336E VJE =.75E TR = 1.E 9 TF = E 12 + ITF =.77E XTF = 91.38E + VTF = 18.37E + PTF =.E + + RE =.E + RB =.E + COPYRIGHT 1997 INTERSIL CORPORATION ALL RIGHTS RESERVED CA3127 PSpice MODEL REV: BJT MODEL.model CA3127 NPN + (IS = 3.2E 12 XTI= 3.E + EG = 1.11E + VAF = E VAR = E + 2 BF = 95.2E + ISE = 2.586E 12 NE = 1.99E + + IKF = 61.5E 3 XTB =.E + BR =.E + ISC = 15E 9 + NC = 2.E + IKR = 1.E 3 RC = 1.E + CJC = 281.1E 15 + MJC =.138E VJC =.75E FC = 5.E 1 CJE = 651.9E 15 + MJE =.336E VJE =.75E TR = 1.E 9 TF = E 12 + ITF = 1.6E XTF = 2.5E + 3 VTF = 37.E + PTF =.E + + RE =.E + RB =.E + 2

3 CA346 Model Performance (MHz) h µ 3µ m 3.m 1m 3m m FIGURE 1. CA346 f T vs I C 4 1µ µ m 1m m FIGURE 2. CA346 h FE vs I C m 3m 3. 1 EMITTERBASE VOLTAGE (V) F m 3m COLLECTORBASE VOLTAGE (V) FIGURE 3. CA346 C EB vs V EB FIGURE 4. CA346 C CB vs V CB 1.2 (V) µ 3µ m 3.m 1m 3m m FIGURE 5. CA346 V CE(SAT) vs I C 3

4 CA3127 Model Performance (GHz) COLLECTOR CURRENT (ma) 2 µ 3µ m 3.m 1m 3m m FIGURE 6. CA3127 f T vs I C FIGURE 7. CA3127 h FE vs I C (ƒf) 4 (ƒf) m 3m 3. 1 EMITTERBASE VOLTAGE (V) 12 m 3m COLLECTORBASE VOLTAGE (V) FIGURE 8. CA3127 C EB vs V EB FIGURE 9. CA3127 C CB vs V CB 1.2 (V) µ 3µ m 3.m 1m 3m m FIGURE 1. CA3127 V CE(SAT) vs I C 4

5 CA386 Model Performance (MHz) µa 3µA m 3.m 1m 3m m 4 µa 3µA m 3.m 1m 3m m FIGURE 11. CA386 f T vs I C FIGURE 12. CA386 hfe vs I C mv 3mV 3. 1 EMITTERBASE VOLTAGE (V) µ 3µ COLLECTORBASE VOLTAGE (V) FIGURE 13. CA386 C EB vs V EB FIGURE 14. CA386 C CB vs V CB 1.2 (V) µ 3µ m 3.m 1m 3m m FIGURE 15. CA386 V CE(SAT) vs I C 5

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