Simulating Microsystems
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1 Simulating Microsystems David Bindel UC Berkeley, EECS Simulating Microsystems p.1/21
2 Overview Microsystems overview Simulation software Case study: gap-closing actuator Simulating Microsystems p.2/21
3 Microsystem basics MEMS == Micro Electro Mechanical Systems Micromachines made with IC fab technology Micro: micrometer scale features Electromechical (optical, thermal, fluidic, etc): multiple energy domains Systems: heirarchical designs with subsystems and interfaces Simulating Microsystems p.3/21
4 Microsystem applications Inertial sensors: accelerometers, gyros Fluidics: ink jet printers, biolab chips Optics: optical switches, projectors Pressure sensors: industrial, medical, auto RF devices: cell phone, radar components Other: microrelays, sensors, disk heads (List from Microsystem Design by S. Senturia) Simulating Microsystems p.4/21
5 Microscale physics Surface area / volume ratio is large (compared to most macroscopic structures) Gravitational forces negligible Electrostatic forces substantial Frictional forces (particularly stiction ) important Air behaves like a very viscous fluid ( Still classical (vs. nanosystems) ) Simulating Microsystems p.5/21
6 MEMS fabrication Basic cycle: deposition, lithography, etch Not precision machining! Process characterization is important Robustness to process variation is important MUMPS == multi-user MEMS processes (not a sparse linear algebra package) Simulating Microsystems p.6/21
7 Simulation questions What would this design do? What is the safe operating range? How sensitive is the design to variations? How can I optimize my design? How do I interpret my experimental results? Simulating Microsystems p.7/21
8 Simulation levels Level of abstraction in device design: Process level Device level System level Level of abstraction in simulation: Physical simulation Behavior simulation Simulating Microsystems p.8/21
9 Approaches to modeling Finely discretize PDEs Reduce order of fine discretization Weighted residuals with simple trial form Equivalent circuit or spring-mass-damper Back-of-envelope calculations Simulating Microsystems p.9/21
10 Software Finite / boundary elements: ANSYS, Coventor System level modeling: Coventor, NODAS, SUGAR Simulating Microsystems p.10/21
11 Software: Coyote/Coventor Simulating Microsystems p.11/21
12 Software: SUGAR Name and heritage from SPICE Written in Matlab and C Version 2.0 beta (many subreleases) Web interface available Simulating Microsystems p.12/21
13 SUGAR web M&MEMS - A Millennium-based MEMS Simulator cfm@bsac.eecs.berkeley.edu Modal Simulation Results in Java Viewer > File Manager > Turn Help On > Change Password > Admin > About > Logout Frame 1. Contents Structure with Frequency tang.net > Display Device > Simulations > Edit Netlist 2. Original Structure FRAME #1 > Syntax Check > Rename Netlist > Delete Netlist SCALE * 1 *2 /2 =1 VIEWANGLE XY XZ YZ Prev Next Animation 2001 The Regents of the University of California. All rights reserved. Direct M&MEMS/SUGAR questions, comments, and bug reports to: Simulating Microsystems p.13/21
14 Case study: gap-closing actuator x Y vertical [m] X horizontal [m] x 10 4 Simulating Microsystems p.14/21
15 SUGAR netlist param V = 10 Vsrc * [A f] [V=V] eground * [f] [] anchor p1 [A] [l=5u w=10u oz=deg(180)] beam2de p1 [A b] [l=100u w=2u h=2u oz=0 R=100] gap2de p1 [b c D E] [l=100u w1=10u w2=5u oz=0 gap=2u R1=100 R2=100] eground * [D] [] anchor p1 [D] [l=5u w=10u oz=-deg(90)] anchor p1 [E] [l=5u w=10u oz=-deg(90)] eground * [E] [] Simulating Microsystems p.15/21
16 Simplified version: hand analysis If displacement down is, initial gap is : Simulating Microsystems p.16/21
17 Force magnitudes v. displacement Straight line is elastic force; curved lines are electrostatic forces with varying voltages. Simulating Microsystems p.17/21
18 Electrostatic pull-in For the simplified model: For there is one stable and one unstable equilibrium. For The gap at pull-in is there is no equilibrium. "! the initial gap. Pulled-in gaps often never come apart. Simulating Microsystems p.18/21
19 Pull-in and model detail Pull-in occurs in less over-simplified models But the nature of the bifurcation varies with model! How detailed a model is needed to catch important bifurcations? Simulating Microsystems p.19/21
20 Pull-in and M-test Pull-in is dramatic easy to see and measure Pull-in voltage depends on material properties M-Test idea: Use measured pull-in voltages for arrays of test structures to determine material properties Fitted a functional form to simulations in order to get approximate pull-in / measurement relation No attempt I know of to investigate sensitivity to overetch and other variations Simulating Microsystems p.20/21
21 Simulation and gap actuator Determine resonant frequencies Determine safe (quasi-static) operating ranges Determine relation between pull-in and material properties Experiment with stabilizing mechanisms Simulating Microsystems p.21/21
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